KR960026635A - 금속배선 형성방법 - Google Patents

금속배선 형성방법 Download PDF

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Publication number
KR960026635A
KR960026635A KR1019940038472A KR19940038472A KR960026635A KR 960026635 A KR960026635 A KR 960026635A KR 1019940038472 A KR1019940038472 A KR 1019940038472A KR 19940038472 A KR19940038472 A KR 19940038472A KR 960026635 A KR960026635 A KR 960026635A
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KR
South Korea
Prior art keywords
film
metal
forming
material film
exposed
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Application number
KR1019940038472A
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English (en)
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KR0138963B1 (ko
Inventor
권병인
최현묵
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김주용
현대전자산업 주식회사
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Priority to KR1019940038472A priority Critical patent/KR0138963B1/ko
Publication of KR960026635A publication Critical patent/KR960026635A/ko
Application granted granted Critical
Publication of KR0138963B1 publication Critical patent/KR0138963B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76883—Post-treatment or after-treatment of the conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Abstract

본 발명은 기판상에 금속배선이 형성된 예정된 부위가 노출되도록 소정의 물질막을 패터닝하는 단계; 상기 기판이 노출된물질막 패턴간의 사이에 금속막을 형성하는 단계; 상기 물질막 패턴을 제거하는 단계를 포함하는 것을 특징으로 하는 금속배선 형성방법에 관한 것으로, 금속막상에 직접 마스크 물질(감광막) 형성공정을 진행할 필요가 없어 금속배선의 프로파일(Profile) 불량을 해소하여 소자의 전기적 특성 및 소자제조 수율을 향상시키는 효과를 가져온다.

Description

금속배선 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2A도 내지 제2F도는 본 발명에 따른 금속배선 형성 공정도.

Claims (5)

  1. 금속배선 형성방법에 있어서; 기판상에 금속배선이 형성될 예정된 부위가 노출되도록 소정의 물질막을 패터닝하는 단계; 상기 기판이 노출된 물질막 패턴간의 사이에 금속막을 형성하는 단계; 상기 물질막 패턴을 제거하는 단계를 포함하는 것을 특징으로 하는 금속배선 형성방법.
  2. 제1항에 있어서; 상기 기판이 노출된 물질막 패턴간의 사이에 금속막을 형성하는 단계는; 전체구조 상부에 금속막을 형성하는 단계; 상기 물질막 표면이 노출될 때까지 금속막을 전면식각하는 단계를 포함하는 것을 특징으로 하는 금속배선 형성방법.
  3. 제2항에 있어서; 상기 물질막 표면이 노출될 때까지 금속막을 전면 식각하는 단계는; 금속막상에 감광막을 형성하는 단계; 상기 금속막과 감광막의 식각선택비를 동일하게 하여 물질막 표면이 노출될 때까지 상기 감광막 및 금속막을 전면식각하는 단계를 포함하는 것을 특징으로 하는 금속배선 형성방법.
  4. 제1항에 있어서; 상기 물질막은 감광막 및 금속막과 식각선택비를 갖는 물질막인 것을 특징으로 하는 금속배선 형성방법.
  5. 제4항에 있어서; 상기 물질막은 산화막인 것을 특징으로 하는 금속배선 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940038472A 1994-12-29 1994-12-29 금속배선 형성방법 KR0138963B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940038472A KR0138963B1 (ko) 1994-12-29 1994-12-29 금속배선 형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940038472A KR0138963B1 (ko) 1994-12-29 1994-12-29 금속배선 형성방법

Publications (2)

Publication Number Publication Date
KR960026635A true KR960026635A (ko) 1996-07-22
KR0138963B1 KR0138963B1 (ko) 1998-06-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940038472A KR0138963B1 (ko) 1994-12-29 1994-12-29 금속배선 형성방법

Country Status (1)

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KR (1) KR0138963B1 (ko)

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Publication number Publication date
KR0138963B1 (ko) 1998-06-01

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