KR960009229B1 - Semiconductor memory unit having redundant structure - Google Patents

Semiconductor memory unit having redundant structure Download PDF

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Publication number
KR960009229B1
KR960009229B1 KR92701423A KR920701423A KR960009229B1 KR 960009229 B1 KR960009229 B1 KR 960009229B1 KR 92701423 A KR92701423 A KR 92701423A KR 920701423 A KR920701423 A KR 920701423A KR 960009229 B1 KR960009229 B1 KR 960009229B1
Authority
KR
South Korea
Prior art keywords
semiconductor memory
memory unit
redundant structure
redundant
semiconductor
Prior art date
Application number
KR92701423A
Other languages
English (en)
Other versions
KR920704304A (ko
Inventor
Yoshihiro Dakeme
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR920704304A publication Critical patent/KR920704304A/ko
Application granted granted Critical
Publication of KR960009229B1 publication Critical patent/KR960009229B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/81—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a hierarchical redundancy scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
    • G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
KR92701423A 1990-10-16 1992-06-16 Semiconductor memory unit having redundant structure KR960009229B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP90-276889 1990-10-16
JP2276889A JP3019869B2 (ja) 1990-10-16 1990-10-16 半導体メモリ
PCT/JP1991/001406 WO1992007362A1 (en) 1990-10-16 1991-10-16 Semiconductor memory unit having redundant structure

Publications (2)

Publication Number Publication Date
KR920704304A KR920704304A (ko) 1992-12-19
KR960009229B1 true KR960009229B1 (en) 1996-07-16

Family

ID=17575813

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92701423A KR960009229B1 (en) 1990-10-16 1992-06-16 Semiconductor memory unit having redundant structure

Country Status (6)

Country Link
US (1) US5307316A (ko)
EP (1) EP0504434B1 (ko)
JP (1) JP3019869B2 (ko)
KR (1) KR960009229B1 (ko)
DE (1) DE69128960T2 (ko)
WO (1) WO1992007362A1 (ko)

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US5761127A (en) * 1991-11-20 1998-06-02 Fujitsu Limited Flash-erasable semiconductor memory device having an improved reliability
JP3040625B2 (ja) * 1992-02-07 2000-05-15 松下電器産業株式会社 半導体記憶装置
EP0654168B1 (en) 1992-08-10 2001-10-31 Monolithic System Technology, Inc. Fault-tolerant hierarchical bus system
US5452251A (en) 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
KR960008788B1 (en) * 1992-12-30 1996-07-03 Hyundai Electronics Ind Row redundancy circuit
JP3265076B2 (ja) * 1993-09-20 2002-03-11 株式会社東芝 半導体記憶装置
US5519657A (en) * 1993-09-30 1996-05-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having a redundant memory array and a testing method thereof
US5495447A (en) * 1993-10-08 1996-02-27 Digital Equipment Corporation Method and apparatus using mapped redundancy to perform multiple large block memory array repair
US5473573A (en) * 1994-05-09 1995-12-05 Cirrus Logic, Inc. Single chip controller-memory device and a memory architecture and methods suitable for implementing the same
JPH0817197A (ja) * 1994-06-30 1996-01-19 Fujitsu Ltd 半導体記憶装置
US5655113A (en) * 1994-07-05 1997-08-05 Monolithic System Technology, Inc. Resynchronization circuit for a memory system and method of operating same
US5822256A (en) * 1994-09-06 1998-10-13 Intel Corporation Method and circuitry for usage of partially functional nonvolatile memory
JP2742220B2 (ja) * 1994-09-09 1998-04-22 松下電器産業株式会社 半導体記憶装置
JP3425811B2 (ja) * 1994-09-28 2003-07-14 Ｎｅｃエレクトロニクス株式会社 半導体メモリ
JP3263259B2 (ja) * 1994-10-04 2002-03-04 株式会社東芝 半導体記憶装置
JPH08203275A (ja) * 1995-01-28 1996-08-09 Sony Corp 遅延用メモリｉｃ
GB2292236A (en) * 1995-04-04 1996-02-14 Memory Corp Plc Improved partial memory engine
US5621690A (en) * 1995-04-28 1997-04-15 Intel Corporation Nonvolatile memory blocking architecture and redundancy
US5623448A (en) * 1995-05-09 1997-04-22 Texas Instruments Incorporated Apparatus and method for implementing integrated circuit memory device component redundancy using dynamic power distribution switching
US5572470A (en) * 1995-05-10 1996-11-05 Sgs-Thomson Microelectronics, Inc. Apparatus and method for mapping a redundant memory column to a defective memory column
ATE220228T1 (de) * 1995-08-09 2002-07-15 Infineon Technologies Ag Integrierte halbleiter-speichervorrichtung mit redundanzschaltungsanordnung
US5612918A (en) * 1995-12-29 1997-03-18 Sgs-Thomson Microelectronics, Inc. Redundancy architecture
US5771195A (en) * 1995-12-29 1998-06-23 Sgs-Thomson Microelectronics, Inc. Circuit and method for replacing a defective memory cell with a redundant memory cell
US5841709A (en) * 1995-12-29 1998-11-24 Stmicroelectronics, Inc. Memory having and method for testing redundant memory cells
US6037799A (en) * 1995-12-29 2000-03-14 Stmicroelectronics, Inc. Circuit and method for selecting a signal
US5790462A (en) * 1995-12-29 1998-08-04 Sgs-Thomson Microelectronics, Inc. Redundancy control
US5706292A (en) 1996-04-25 1998-01-06 Micron Technology, Inc. Layout for a semiconductor memory device having redundant elements
US5699307A (en) * 1996-06-28 1997-12-16 Intel Corporation Method and apparatus for providing redundant memory in an integrated circuit utilizing a subarray shuffle replacement scheme
US6172935B1 (en) 1997-04-25 2001-01-09 Micron Technology, Inc. Synchronous dynamic random access memory device
JP3688443B2 (ja) * 1997-08-28 2005-08-31 株式会社東芝 半導体記憶装置
JPH11219598A (ja) * 1998-02-03 1999-08-10 Mitsubishi Electric Corp 半導体記憶装置
JP2000243086A (ja) * 1998-12-24 2000-09-08 Mitsubishi Electric Corp 半導体記憶装置
JP4413306B2 (ja) * 1999-03-23 2010-02-10 株式会社東芝 半導体記憶装置
JP2000285694A (ja) * 1999-03-30 2000-10-13 Mitsubishi Electric Corp 半導体記憶装置および半導体記憶装置を搭載する半導体集積回路装置
US8164362B2 (en) * 2000-02-02 2012-04-24 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US7173867B2 (en) * 2001-02-02 2007-02-06 Broadcom Corporation Memory redundancy circuit techniques
US6745354B2 (en) * 2000-02-02 2004-06-01 Broadcom Corporation Memory redundancy implementation
JP3457611B2 (ja) * 2000-02-16 2003-10-20 日本電気株式会社 半導体記憶装置
JP4398574B2 (ja) * 2000-07-19 2010-01-13 富士通マイクロエレクトロニクス株式会社 半導体記憶装置とその冗長方法
JP2003187591A (ja) * 2001-12-14 2003-07-04 Toshiba Corp 半導体記憶装置
JP4235122B2 (ja) * 2004-02-06 2009-03-11 シャープ株式会社 半導体記憶装置及び半導体記憶装置のテスト方法
KR100533385B1 (ko) * 2004-04-16 2005-12-06 주식회사 하이닉스반도체 반도체 메모리 테스트 방법
JP4677222B2 (ja) * 2004-11-26 2011-04-27 富士通株式会社 サーバ装置
JP4524636B2 (ja) * 2005-03-24 2010-08-18 エルピーダメモリ株式会社 半導体記憶装置

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JPS58208998A (ja) * 1982-05-28 1983-12-05 Toshiba Corp 半導体ｃｍｏｓメモリ
JPS59119743A (ja) * 1982-12-25 1984-07-11 Nippon Telegr & Teleph Corp <Ntt> 集積回路の冗長構成方式
JPS60137000A (ja) * 1984-12-06 1985-07-20 Hitachi Ltd 半導体メモリ集積回路
JPS62200599A (ja) * 1986-02-26 1987-09-04 Sharp Corp 半導体記憶素子
JP2700640B2 (ja) * 1986-09-24 1998-01-21 日立超エル・エス・アイ・エンジニアリング 株式会社 半導体記憶装置
NL8900026A (nl) * 1989-01-06 1990-08-01 Philips Nv Matrixgeheugen, bevattende standaardblokken, standaardsubblokken, een redundant blok, en redundante subblokken, alsmede geintegreerde schakeling bevattende meerdere van zulke matrixgeheugens.
JP2664236B2 (ja) * 1989-02-01 1997-10-15 富士通株式会社 半導体記憶装置

Also Published As

Publication number Publication date
US5307316A (en) 1994-04-26
DE69128960D1 (de) 1998-04-02
KR920704304A (ko) 1992-12-19
JPH04152565A (ja) 1992-05-26
DE69128960T2 (de) 1998-06-18
EP0504434A1 (en) 1992-09-23
JP3019869B2 (ja) 2000-03-13
EP0504434A4 (ko) 1994-12-14
EP0504434B1 (en) 1998-02-25
WO1992007362A1 (en) 1992-04-30

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