KR960001345B1 - 글래스 리드 탑재형 반도체 장치 - Google Patents

글래스 리드 탑재형 반도체 장치 Download PDF

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Publication number
KR960001345B1
KR960001345B1 KR1019920015607A KR920015607A KR960001345B1 KR 960001345 B1 KR960001345 B1 KR 960001345B1 KR 1019920015607 A KR1019920015607 A KR 1019920015607A KR 920015607 A KR920015607 A KR 920015607A KR 960001345 B1 KR960001345 B1 KR 960001345B1
Authority
KR
South Korea
Prior art keywords
semiconductor device
glass lead
glass
lead
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920015607A
Other languages
English (en)
Korean (ko)
Other versions
KR940004864A (ko
Inventor
전흥섭
Original Assignee
금성일렉트론주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론주식회사, 문정환 filed Critical 금성일렉트론주식회사
Priority to KR1019920015607A priority Critical patent/KR960001345B1/ko
Priority to US08/101,030 priority patent/US5352852A/en
Priority to TW082106423A priority patent/TW281797B/zh
Priority to JP20067193A priority patent/JP3388824B2/ja
Priority to DE4328916A priority patent/DE4328916A1/de
Publication of KR940004864A publication Critical patent/KR940004864A/ko
Application granted granted Critical
Publication of KR960001345B1 publication Critical patent/KR960001345B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)
KR1019920015607A 1992-08-28 1992-08-28 글래스 리드 탑재형 반도체 장치 Expired - Fee Related KR960001345B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019920015607A KR960001345B1 (ko) 1992-08-28 1992-08-28 글래스 리드 탑재형 반도체 장치
US08/101,030 US5352852A (en) 1992-08-28 1993-08-03 Charge coupled device package with glass lid
TW082106423A TW281797B (enExample) 1992-08-28 1993-08-11
JP20067193A JP3388824B2 (ja) 1992-08-28 1993-08-12 ガラスリード載置型固体撮像素子のパッケージ
DE4328916A DE4328916A1 (de) 1992-08-28 1993-08-27 Ladungsgekoppelte Speichergehäuseanordnung mit Glasabdeckung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920015607A KR960001345B1 (ko) 1992-08-28 1992-08-28 글래스 리드 탑재형 반도체 장치

Publications (2)

Publication Number Publication Date
KR940004864A KR940004864A (ko) 1994-03-16
KR960001345B1 true KR960001345B1 (ko) 1996-01-26

Family

ID=19338672

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920015607A Expired - Fee Related KR960001345B1 (ko) 1992-08-28 1992-08-28 글래스 리드 탑재형 반도체 장치

Country Status (5)

Country Link
US (1) US5352852A (enExample)
JP (1) JP3388824B2 (enExample)
KR (1) KR960001345B1 (enExample)
DE (1) DE4328916A1 (enExample)
TW (1) TW281797B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2856647B2 (ja) * 1993-09-20 1999-02-10 株式会社東芝 半導体チップバーンイン用ソケット
JP3318811B2 (ja) * 1994-12-29 2002-08-26 ソニー株式会社 半導体発光素子のパッケージ及びその製造方法
US5949655A (en) * 1997-09-09 1999-09-07 Amkor Technology, Inc. Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device
US6109113A (en) * 1998-06-11 2000-08-29 Delco Electronics Corp. Silicon micromachined capacitive pressure sensor and method of manufacture
US5929497A (en) * 1998-06-11 1999-07-27 Delco Electronics Corporation Batch processed multi-lead vacuum packaging for integrated sensors and circuits
JP3785820B2 (ja) * 1998-08-03 2006-06-14 豊田合成株式会社 発光装置
SG91808A1 (en) * 1999-02-09 2002-10-15 Inst Of Microelectronics Lead frame for an integrated circuit chip (small window)
US6448635B1 (en) 1999-08-30 2002-09-10 Amkor Technology, Inc. Surface acoustical wave flip chip
US6351027B1 (en) * 2000-02-29 2002-02-26 Agilent Technologies, Inc. Chip-mounted enclosure
US6476471B1 (en) * 2000-03-14 2002-11-05 Analog Devices, Inc. Microelectronic-device assemblies and methods that exclude extraneous elements from sensitive areas
US6384473B1 (en) 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
US6531341B1 (en) 2000-05-16 2003-03-11 Sandia Corporation Method of fabricating a microelectronic device package with an integral window
US6661084B1 (en) 2000-05-16 2003-12-09 Sandia Corporation Single level microelectronic device package with an integral window
AU2001253547A1 (en) 2000-05-23 2001-12-03 Atmel Corporation Integrated ic chip package for electronic image sensor die
US6528857B1 (en) 2000-11-13 2003-03-04 Amkor Technology, Inc. Chip size image sensor bumped package
US6629633B1 (en) 2000-11-13 2003-10-07 Amkor Technology, Inc. Chip size image sensor bumped package fabrication method
US6620646B1 (en) * 2000-11-13 2003-09-16 Amkor Technology, Inc. Chip size image sensor wirebond package fabrication method
US20080296572A1 (en) * 2000-12-29 2008-12-04 Stmicroelectronics Sa Optical semiconductor device with sealing spacer
FR2819104B1 (fr) * 2000-12-29 2003-11-07 St Microelectronics Sa Boitier semi-conducteur optique a support transparent
FR2819940B1 (fr) * 2001-01-22 2003-10-17 St Microelectronics Sa Procede de fabrication d'un boitier semi-conducteur optique et boitier semi-conducteur optique
US6974517B2 (en) * 2001-06-13 2005-12-13 Raytheon Company Lid with window hermetically sealed to frame, and a method of making it
USD475981S1 (en) 2002-03-29 2003-06-17 Mitsubishi Denki Kabushiki Kaisha Integrated circuits substrate
US6885107B2 (en) * 2002-08-29 2005-04-26 Micron Technology, Inc. Flip-chip image sensor packages and methods of fabrication
US6988338B1 (en) 2002-10-10 2006-01-24 Raytheon Company Lid with a thermally protected window
US6864116B1 (en) * 2003-10-01 2005-03-08 Optopac, Inc. Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
US7141782B2 (en) * 2004-05-24 2006-11-28 Exquisite Optical Technology, Ltd. Image sensor with protective package structure for sensing area
CN100565887C (zh) * 2004-09-08 2009-12-02 奇景光电股份有限公司 感测器封装构造及其制造方法
JP2006339448A (ja) * 2005-06-02 2006-12-14 Canon Inc 受光ユニットを有する露光装置
US20080064201A1 (en) * 2006-09-07 2008-03-13 Wen Ching Chen Flip chip packaging method that protects the sensing area of an image sensor from contamination
US7911018B2 (en) * 2007-10-30 2011-03-22 Panasonic Corporation Optical device and method of manufacturing the same
TWI399974B (zh) * 2010-03-12 2013-06-21 致伸科技股份有限公司 攝像模組之組裝方法
TWI562312B (en) * 2014-03-24 2016-12-11 Chipmos Technologies Inc Chip-on-film package structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760440A (en) * 1983-10-31 1988-07-26 General Electric Company Package for solid state image sensors
US4855808A (en) * 1987-03-25 1989-08-08 Tower Steven A Hermetic glass chip carrier
JPS6454979A (en) * 1987-08-26 1989-03-02 Seiko Epson Corp Transparent plastic mold image sensor

Also Published As

Publication number Publication date
US5352852A (en) 1994-10-04
JP3388824B2 (ja) 2003-03-24
TW281797B (enExample) 1996-07-21
DE4328916A1 (de) 1994-03-03
JPH06188403A (ja) 1994-07-08
KR940004864A (ko) 1994-03-16

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