DE4328916A1 - Ladungsgekoppelte Speichergehäuseanordnung mit Glasabdeckung - Google Patents

Ladungsgekoppelte Speichergehäuseanordnung mit Glasabdeckung

Info

Publication number
DE4328916A1
DE4328916A1 DE4328916A DE4328916A DE4328916A1 DE 4328916 A1 DE4328916 A1 DE 4328916A1 DE 4328916 A DE4328916 A DE 4328916A DE 4328916 A DE4328916 A DE 4328916A DE 4328916 A1 DE4328916 A1 DE 4328916A1
Authority
DE
Germany
Prior art keywords
glass cover
charge
coupled memory
housing
ccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE4328916A
Other languages
German (de)
English (en)
Inventor
Heung Sup Chun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of DE4328916A1 publication Critical patent/DE4328916A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)
DE4328916A 1992-08-28 1993-08-27 Ladungsgekoppelte Speichergehäuseanordnung mit Glasabdeckung Withdrawn DE4328916A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920015607A KR960001345B1 (ko) 1992-08-28 1992-08-28 글래스 리드 탑재형 반도체 장치

Publications (1)

Publication Number Publication Date
DE4328916A1 true DE4328916A1 (de) 1994-03-03

Family

ID=19338672

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4328916A Withdrawn DE4328916A1 (de) 1992-08-28 1993-08-27 Ladungsgekoppelte Speichergehäuseanordnung mit Glasabdeckung

Country Status (5)

Country Link
US (1) US5352852A (enExample)
JP (1) JP3388824B2 (enExample)
KR (1) KR960001345B1 (enExample)
DE (1) DE4328916A1 (enExample)
TW (1) TW281797B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1130646A1 (en) * 2000-02-29 2001-09-05 Agilent Technologies Inc. a Delaware Corporation Chip-mounted enclosure

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2856647B2 (ja) * 1993-09-20 1999-02-10 株式会社東芝 半導体チップバーンイン用ソケット
JP3318811B2 (ja) * 1994-12-29 2002-08-26 ソニー株式会社 半導体発光素子のパッケージ及びその製造方法
US5949655A (en) * 1997-09-09 1999-09-07 Amkor Technology, Inc. Mounting having an aperture cover with adhesive locking feature for flip chip optical integrated circuit device
US5929497A (en) * 1998-06-11 1999-07-27 Delco Electronics Corporation Batch processed multi-lead vacuum packaging for integrated sensors and circuits
US6109113A (en) * 1998-06-11 2000-08-29 Delco Electronics Corp. Silicon micromachined capacitive pressure sensor and method of manufacture
JP3785820B2 (ja) * 1998-08-03 2006-06-14 豊田合成株式会社 発光装置
SG91808A1 (en) * 1999-02-09 2002-10-15 Inst Of Microelectronics Lead frame for an integrated circuit chip (small window)
US6448635B1 (en) 1999-08-30 2002-09-10 Amkor Technology, Inc. Surface acoustical wave flip chip
US6476471B1 (en) * 2000-03-14 2002-11-05 Analog Devices, Inc. Microelectronic-device assemblies and methods that exclude extraneous elements from sensitive areas
US6661084B1 (en) 2000-05-16 2003-12-09 Sandia Corporation Single level microelectronic device package with an integral window
US6531341B1 (en) 2000-05-16 2003-03-11 Sandia Corporation Method of fabricating a microelectronic device package with an integral window
US6384473B1 (en) 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
WO2001091193A2 (en) 2000-05-23 2001-11-29 Atmel Corporation Integrated ic chip package for electronic image sensor die
US6528857B1 (en) 2000-11-13 2003-03-04 Amkor Technology, Inc. Chip size image sensor bumped package
US6620646B1 (en) * 2000-11-13 2003-09-16 Amkor Technology, Inc. Chip size image sensor wirebond package fabrication method
US6629633B1 (en) 2000-11-13 2003-10-07 Amkor Technology, Inc. Chip size image sensor bumped package fabrication method
FR2819104B1 (fr) * 2000-12-29 2003-11-07 St Microelectronics Sa Boitier semi-conducteur optique a support transparent
US20080296572A1 (en) * 2000-12-29 2008-12-04 Stmicroelectronics Sa Optical semiconductor device with sealing spacer
FR2819940B1 (fr) * 2001-01-22 2003-10-17 St Microelectronics Sa Procede de fabrication d'un boitier semi-conducteur optique et boitier semi-conducteur optique
US6974517B2 (en) * 2001-06-13 2005-12-13 Raytheon Company Lid with window hermetically sealed to frame, and a method of making it
USD475981S1 (en) 2002-03-29 2003-06-17 Mitsubishi Denki Kabushiki Kaisha Integrated circuits substrate
US6885107B2 (en) * 2002-08-29 2005-04-26 Micron Technology, Inc. Flip-chip image sensor packages and methods of fabrication
US6988338B1 (en) 2002-10-10 2006-01-24 Raytheon Company Lid with a thermally protected window
US6864116B1 (en) * 2003-10-01 2005-03-08 Optopac, Inc. Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
US7141782B2 (en) * 2004-05-24 2006-11-28 Exquisite Optical Technology, Ltd. Image sensor with protective package structure for sensing area
CN100565887C (zh) * 2004-09-08 2009-12-02 奇景光电股份有限公司 感测器封装构造及其制造方法
JP2006339448A (ja) * 2005-06-02 2006-12-14 Canon Inc 受光ユニットを有する露光装置
US20080064201A1 (en) * 2006-09-07 2008-03-13 Wen Ching Chen Flip chip packaging method that protects the sensing area of an image sensor from contamination
US7911018B2 (en) * 2007-10-30 2011-03-22 Panasonic Corporation Optical device and method of manufacturing the same
TWI399974B (zh) * 2010-03-12 2013-06-21 致伸科技股份有限公司 攝像模組之組裝方法
TWI562312B (en) * 2014-03-24 2016-12-11 Chipmos Technologies Inc Chip-on-film package structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760440A (en) * 1983-10-31 1988-07-26 General Electric Company Package for solid state image sensors
US4855808A (en) * 1987-03-25 1989-08-08 Tower Steven A Hermetic glass chip carrier
JPS6454979A (en) * 1987-08-26 1989-03-02 Seiko Epson Corp Transparent plastic mold image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1130646A1 (en) * 2000-02-29 2001-09-05 Agilent Technologies Inc. a Delaware Corporation Chip-mounted enclosure

Also Published As

Publication number Publication date
JP3388824B2 (ja) 2003-03-24
TW281797B (enExample) 1996-07-21
KR940004864A (ko) 1994-03-16
KR960001345B1 (ko) 1996-01-26
JPH06188403A (ja) 1994-07-08
US5352852A (en) 1994-10-04

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8130 Withdrawal