KR960000376B1 - 플루오르를 함유한 실리콘 산화막 형성 방법 - Google Patents
플루오르를 함유한 실리콘 산화막 형성 방법 Download PDFInfo
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- KR960000376B1 KR960000376B1 KR1019920000782A KR920000782A KR960000376B1 KR 960000376 B1 KR960000376 B1 KR 960000376B1 KR 1019920000782 A KR1019920000782 A KR 1019920000782A KR 920000782 A KR920000782 A KR 920000782A KR 960000376 B1 KR960000376 B1 KR 960000376B1
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- Prior art keywords
- silicon oxide
- oxide film
- film
- containing fluorine
- forming
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 65
- 229910052814 silicon oxide Inorganic materials 0.000 title claims description 65
- 229910052731 fluorine Inorganic materials 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 23
- 239000011737 fluorine Substances 0.000 title claims description 22
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 title 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 5
- XVYIJOWQJOQFBG-UHFFFAOYSA-N triethoxy(fluoro)silane Chemical compound CCO[Si](F)(OCC)OCC XVYIJOWQJOQFBG-UHFFFAOYSA-N 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 2
- 239000004809 Teflon Substances 0.000 claims description 2
- 229920006362 Teflon® Polymers 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 238000007796 conventional method Methods 0.000 description 10
- 238000010571 fourier transform-infrared absorption spectrum Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02107—Forming insulating materials on a substrate
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Abstract
내용 없음.
Description
제1도는 본 발명의 제1실시예에 따르는 실리콘 산화막 형성 장치를 도시하는 개략도.
제2도는 본 발명에 따라 형성된 실리콘 산화막의 푸리에 변환 적외선 흡수 스펙트럼을 도시하는 그래프.
제3도는 종래의 실리콘 산화막의 푸리에 변환 적외선 흡수 스펙트럼 도시도.
제4a도 내지 4e도는 본 발명의 제2실시예에 따르는 반도체 장치 제조 단계를 도시하는 단면도.
* 도면의 주요부분에 대한 부호의 설명
101 : 반응성 105, 106 : 유량 제어기
107, 108 : 버블러 109, 110 : 히터
305, 306 : 실리콘 산화막
[발명의 배경]
본 발명은 절연막 형성 방법에 관한 것으로 특히, 플루오르를 함유하는 실리콘 산화막의 형성 방법에 관한 것이다.
종래, 상기 타입의 실리콘 산화막 형성 방법으로는 화학 기상 성장 방법 (chemical vapor phase deposition method)이 널리 사용된다. 예로, 다음 방법이 사용된다. 즉, 소스 가스로서 테트라에틸오르소실리케이트(화학식 : Si(OC2H5)4)가 버블링에 의해 증발된 후 반응실내에서 오존과 혼합되어 기판 온도 섭씨 300도 내지 400도로 상압(atmospheric pressure)하에서 실리콘 산화막을 형성하는 방법이 있다. 또한, 도핑가스로서 트리메틸포스페이트(화학식 : PO(OCH3)3)와 트리메틸보레이트(화학식 : B(OCH3)3)를 사용하여 인 및 붕소를 도핑하는 방법이 사용된다(1990년도 전자 재료 잡지 19권 1호 등각의 도프된 산화물을 위한 오존/유기 소스 AP CVD).
종래의 실리콘 산화막 형성 방법은 다음의 문제점을 갖고 있다. 즉, 막 형성 온도가 높으므로, 즉, 섭씨 300도 내지 400도로 높으므로, 실리콘 산화막은 마스크로서 포토레지스트막과 같은 유기막을 사용하여 선택적으로 형성될 수 없다. 또한, 온도가 내려갈 때, 막 특성은 현저히 저하되고, 막은 실제 응용에 사용될 수 없다는 단점이 있다. 또, 종래 방법으로 형성된 실리콘 산화막은 내부 응력으로서 약 1×109dyn/cm2의 강한 인장 응력을 가지므로, 2㎛ 이상의 두께를 갖는 막이 형성될 때 이러한 막에서는 균열이 쉽게 발생한다. 상기 이유로 인해, 상기 막은 울퉁불퉁한 표면을 갖는 알루미늄 배선층과 같은 기판상에 쉽게 형성되지 않는다.
[발명의 개요]
본 발명의 목적은 막 형성 온도가 감소될 때도 막 특성이 저하되지 않는 플루오르를 함유한 실리콘 산화막을 제공하는 것이다.
본 발명의 또다른 목적은 마스크로서 포토레지스트막과 같은 유기막을 사용하여 선택적으로 형성될 수 있는 플루오르를 함유한 실리콘 산화막을 제공하는 것이다.
본 발명의 또다른 목적은 울퉁불퉁한 표면을 갖는 알루미늄 배선층과 같은 기판상에 형성될 수 있는 플루오르를 함유한 실리콘 산화막을 제공하는 것이다.
본 발명의 또다른 목적은 반도체 장치에 사용된 절연막으로서 실제 사용될 수 있는 플루오르를 함유한 실리콘 산화막을 제공하는 것이다.
본 발명의 상기 목적을 이루기 위해, 플루오르를 함유한 실리콘 산화막 형성 방법이 제공되는데, 여기서 실리콘 산화막은 소정 압력과 소정 온도를 갖는 반응실에서 주성분으로서 알콕시플루오로실란실레인(화학식 : Fn-Si(OR)4-n, R : 알킬기, n : 1 내지 3의 정수)을 함유한 증기를 사용하여 섭씨 200도 이하의 기판온도로 형성된다.
본 발명은 첨부한 도면을 참조로 이하 설명될 것이다. 다음의 실시예에서. 트리에토시플루오로실란(triethoxyfluorosilane)(화학식 : F-Si(OC2H5)3)은 알콕시플루오로실란(alkoxy fluorosilance)으로서 사용된다.
막 형성 장치가 제1도에 개략적으로 도시되어 있다. 제1도에서, 서셉터 (susceptor)(102)는 반응실(101)에 배치되고, 서셉터(102)는 히터(103)를 가지고 있으며, 반도체 기판(104)은 서셉터(102)상에 고착되어 있다. 서셉터(102)는 장치의 상부 또는 하부측중 어느 하나상에 배열될 수 있고, 반도체 기판 표면은 상부 또는 하부 방향중 어느 하나의 방향을 향한다. 트리에톡시플루오로실란은 소정의 온도에서 버블러(bubbler)(107)에 존재하고, 유량 제어기(105)에 의해 제어되고 소정 유량을 갖는 질소 가스에 의해 버블되며, 반응실(101)에 공급된다. 트리에톡시플루오로실란 및 포함하는 증류수간의 가수분해 반응에 사용된 스팀은 유량제어기 (106)에 의해 제어된 소정 유량을 갖는 질소 가스에 의해 버블되고 소정의 온도로 유지된 버블러(108)에서 반응실(101)로 공급된다. 반응실(101)은 소정 압력으로 유지시키기 위해 항상 진공 상태로 된다. 버블러(107 및 108)로부터 반응실에 이르는 가스 공급관(111 및 112) 각각의 온도는 히터(109 및 110)에 의해 일정하게 유지된다.
실리콘 산화막은 상기 장치에서 6인치 직경을 갖는 실리콘 기판상에 형성된다. 트리에톡시플루오로실란에 대한 버블러(107) 및 증류수에 대한 버블러(108)의 온도는 각각 섭씨 40도 및 60도로 유지되고, 버블링에 사용된 질소 가스의 유량은 1 SLM으로 설정되고, 기판 온도는 30도로 고정되며, 반응실(101)의 압력은 약 700Torr로 설정된다.
제2 및 3도에서, 상기 실시예의 푸리에 변환 적외선 흡수 스펙트럼과 종래 기술이 서로 비교된다. 상기 실시예에 따르면, 플루오르를 함유한 약 0.5㎛ 두께를 갖는 실리콘 산화막을 형성하기 위해 60분 동안 막증착이 행해질 때, 제2도에서 X로 표시된 푸리에 변환 적외선 흡수 스펙트럼(FT-IR)은 얻어질 수 있었다. 약 0.5μm 두께를 갖는 실리콘 산화막 각각은 종래 기술에 따른 방법으로 250℃와 350℃의 온도에서 형성되고, 제3도의 Y및 Z로 표시된 푸리에 변환 적외선 흡수 스펙트럼(FT-IR)이 얻어질 수 있다. 제2도에서, 수산기(히드록실 라디칼)(hydroxyl radical) Si-O결합, 및 Si-OH결합에 대응하는 흡수 피크는 각기, 약3,300cm-1, 약 1,070cm-1, 및 약930cm-1근방의 파수(wave number)로 관찰되고, 주성분으로서 Si-O를 갖는 막이 형성된다고 이해된다. 결과적으로, 본 실시예의 막이 섭씨 30도의 매우 낮은 온도에서 형성되지만, 제2도의 수산기에 대응하는 흡수 피크 세기는 종래 방법에서 섭씨 250도의 온도에서 형성된 실리콘 산화막의 수산기에 대응하는 세기(제3도에서 Y로 표시된) 보다 더 작다. 이는 본 발명에 따른 실리콘 산화막이 종래 방법에서 상대적으로 낮은 온도인 섭씨 250도에서 형성된 실리콘 산화막의 것보다 더 적은 함유 수분량을 갖는 것을 의미한다. 또한, 본 발명에 따른 실리콘 산화막과 종래 방법에서 섭씨 350도의 온도(제3도에서 Z로 표시됨)에서 형성된 실리콘 산화막을 비교하여 보면, 실리콘 산화막 둘다의 수산기에 대응하는 흡수 피크는 서로 동등하다. 즉, 본 발명을 기초로 해서 매우 낮은 온도의 섭씨 30도에서 형성된 실리콘 산화막의 함유 수분량은 종래 방법에서 섭씨 350도의 온도에서 형성된 실리콘 산화막의 함유 수분량과 동등하다.
상기 실시예에서 형성된 실리콘 산화막의 굴절율은 종래의 실리콘 산화막의 굴절율 1.45 보다 낮은 1.42이다. 또한, 상기 실시예의 실리콘 산화막에서 플루오르 함유량이 X-선 광전자 분광분석으로 측정될 때, 플루오르 원자 농도는 약 7원자%이다. 상기 실시예에 따라, 종래 방법에 의해 형성된 실리콘 산화막의 막응력(1×109dyn/cm2) 보다 적은 21×108dyn/cm2의 막 응력이 얻어질 수 있다.
약 4mm2의 면적을 갖는 알루미늄 전극은 상기 실시예에서 형성된 실리콘 산화막상에 형성되고, 그 전기 특성이 검사된다. 결과적으로, 5V인가 동안 전극의 누설 전류 밀도는 약 5×10-11A/cm2이고, 그 값은 상기 실리콘 산화막의 그것과 동일한 두께를 갖는 실리콘 산화막의 약 21×10-10A/cm2의 누설 전류 밀도보다 작고 종래 방법에서 섭씨 350도의 온도에서 형성된다. 또한, 종래 방법에서 형성된 실리콘 산화막의 4MV/cm의 절연 내압의 세기보다 큰 5MV/cm의 절연 내압의 세기가 얻어질 수 있었다. 1MHz의 측정 주파수에서 캐패시턴스-전압 특성으로부터 계산된 비유전율은 3.7이고, 그 값은 종래 방법에서 형성된 실리콘 산화막의 4.0의 비유전율 보다 적다.
막 형성 조건은 상기 실시예의 것에만 국한되지 않는다. 상기 실시예에 따르면, 기판 온도는 섭씨 200도 또는 이하로 정해질 수 있으며 온도는 알루미늄 배선상에 실리콘 산화막이 형성될 때 힐록(hillock)이라고 불리우는 투영(projection)이 형성되지 않도록 설정된다. 이와는 대조적으로 섭씨 250도 이상의 온도에서는 힐록이라고 불리우는 투영이 형성된다. 또한 반응실내 압력과 가스 유량등은 변할 수 있다.
본 발명의 제2실시예는 제4a도 내지 제4e도를 참조로 이하 설명될 것이다. 상기 실시예에 있어서, 제1실시예에서 기술된 바와같은 막 형성 조건이 이용된다.
제4a도 내지 제4e도는 본 발명의 제2실시예에 따라 실리콘 산화막의 선택적 성장 방법이 2층 알루미늄, 배선 구조체인 층간 절연막에 적용될 때 반도체 장치의 제조 단계를 도시한 단면도이다. 제4a도에서, 두께가 약 0.5㎛인 PSG (Pho sp hosilicate Glass)막(302)과 두께가 약 1μm인 제1알루미늄 배선층(303)은 반도체 기판(301)상에 순차적으로 형성된다. 이때 유기막 패턴으로서 알루미늄 배선층이 패턴화될 때 형성되는 포토레지스트막이 남게 된다. 테플론막 또는 폴리마이드 막이 유기막 패턴으로 사용될 수도 있다는 것을 유념하여야 한다. 제4b도에 도시된 바와같이 본 발명에 따르면, 플루오르를 함유한 두께가 약 1μm인 실리콘 산화막 (305)은 포토레지스트막(304)을 가지지 않는 PSG 막 부분상에만 선택적으로 형성된다. 포토레지스트막(304)이 산소 플라즈마속에서 탄화(ashed)후, 본 발명에 따르면, 제4c도에 도시된 바와같이, 플루오르를 함유하며 두께가 약 0.7μm인 실리콘 산화막(306)이 최종 구조체의 전표면상에 또다시 형성된다. 제4d도에 도시된 바와같이, 공지된 포토에칭법에 의해서 제1알루미늄 배선층과 교통할 수 있는 실리콘 산화막(306)내에 개구(307)가 형성된다. 마지막으로, 제4e도에 도시된 바와같이, 제2알루미늄 배선층(308)이 형성됨으로써 완전히 평탄한 유전체막 표면을 갖는 2층 알루미늄 배선 구조체를 얻을 수 있다.
제1및 제2알루미늄 배선층(303 및 308)을 가지며 상기 단계에서 형성된 두개의 층으로 이루어진 알루미늄 배선 구조에 있어서, 상부 제2알루미늄 배선층(308)은 배선의 단선 및 단락 회로와는 무관하고, 높은 수율을 얻을 수 있다. 또한, 층간 절연막에서의 어떠한 균열도 관찰되지 않는다.
막 형성 조건은 상기 실시예에서의 것에만 국한되지 않는다. 기판 온도는 포토레지스트막이 저하되지 않는 섭씨 150도의 최대 온도 이하로 설정될 수 있다.
상기 실시예에서, 비록 배선 재료로서 알루미늄이 사용되었지만, 배선층은 폴리실리콘, 알루미늄합금, 금, 텡스텐, 몰리브덴, 그리고 티타늄 합금으로 이루어진 그룹으로부터 선택된 재료로 만들어질 수 있다.
포토레지스트막이 탄화된 후에 형성된 플루오르를 함유한 실리콘 산화막을 대신하여 다른 방법에 의해서 형성된 절연막이 사용될 수 있다. 또한, 알루미늄 배선층이 패턴화될 때 포토레지스트막은 남지 않으며 플루오르를 함유한 실리콘 산화막이 최종 구조의 전표면상에 형성되어 층간 절연막으로서 이용 가능하다.
상기 실시예에서, 본 발명을 다층 배선 삽입층에 응용할지라도 본 발명은 실리콘 산화막을 선택적으로 형성시키는 방법으로서 다른 응용에 적용할 수 있다.
상술된 바와같이, 본 발명에 따르면, 주성분으로서 알콕시플루오로실란을 함유하고 있는 증기가 사용되므로, 저온인 섭씨 200도 이하, 특히, 실온에서도 실리콘 산화막이 유익하게 형성될 수 있다. 본 발명에 기초하여 형성된 실리콘 산화막의 막 특성은 종래의 방법으로 형성된 실리콘 산화막의 막 특성보다 우수하며, 본 발명에 따른 실리콘 산화막은 반도체 장치에서 사용된 절연막으로서 실제로 사용될 수 있다.
또한, 본 발명에 따르면, 다음과 같은 장점을 얻을 수 있다. 즉, 섭씨 150도 이하의 온도에서 실리콘 산화막이 형성되기 때문에 포토레지스트막과 같은 유기막을 마스크로 사용하여 실리콘 산화막이 선택적으로 형성될 수 있으며, 반도체 장치의 제조 단계에서 형성된 울퉁불퉁한 표면을 손쉽게 평탄히 할 수 있다.
그러므로, 본 발명은 반도체 장치를 제조하는 방법에 많은 효과를 제공한다. 더욱이, 본 발명은 다른 전자 디바이스에 적용도 충분히 가능하다.
Claims (7)
- 플루오르를 함유한 실리콘 산화막을 기판상에 형성하는 방법에 있어서, 상기 실리콘 산화막은 반응실(101)내에서 주성분으로 하는 일반 화학식 Fn-Si(OR)4-n로 표현되는 알콕시플루오로실란(여기서, R은 알킬 그룹, n은 1 내지 3의 정수)을 함유하는 증기를 사용하여 섭씨 200도 이하의 기판 온도로 형성되는 것을 특징으로 하는 플루오르를 함유한 실리콘 산화막 형성 방법.
- 제1항에 있어서, 트리에톡시플루오로실란은 알콕시플루오로실란으로서 사용되는 것을 특징으로 하는 플루오르를 함유한 실리콘 산화막 형성 방법.
- 플루오르를 함유한 실리콘 산화막 형성 방법에 있어서, 상기 실리콘 산화막 (305)은 반응실내에서 주성분으로 하는 알콕시플루오로실란을 함유하는 증기를 사용하여, 유기막 패턴을 제외한 부분에서 상기 유기막 패턴을 가진 기판 표면상에 섭씨 150℃ 이하의 기판 온도로 선택적으로 형성되는 것을 특징으로 하는 플루오르를 함유한 실리콘 산화막 형성 방법.
- 제3항에 있어서, 상기 유기막 패턴은 포토레지스트막, 테플론막 및, 폴리마이드막중 어느 하나의 막으로 형성되는 것을 특징으로 하는 플루오르를 함유한 실리콘 산화막 형성 방법.
- 제3항에 있어서, 상기 유기막 패턴은 반도체 기판(30)상에 형성된 배선 패턴상에 형성되며, 상기 유기막 패턴이 제거된 상기 배선 패턴상과 상기 실리콘 산화막(306)상에서 층간 절연막으로서 또다른 실리콘 산화막이 형성되는 것을 특징으로 하는 플루오르를 함유한 실리콘 산화막 형성 방법.
- 제5항에 있어서, 상기 또다른 실리콘 산화막은 플루오르를 함유하는 것을 특징으로 하는 플루오르를 함유한 실리콘 산화막 형성 방법.
- 제3항에 있어서, 상기 유기 산화막 패턴은 반도체 기판상에 형성된 배선 패턴상에 형성되며, 상기 유기막 패턴이 제거된 상기 배선 패턴상과 상기 실리콘 산화막상에서 층간 절연막으로서 절연막이 형성되는 것을 특징으로 하는 플루오르를 함유한 실리콘 산화막 형성 방법.
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JP91-6312 | 1991-01-23 | ||
JP3006312A JP2697315B2 (ja) | 1991-01-23 | 1991-01-23 | フッ素含有シリコン酸化膜の形成方法 |
JP91-006312 | 1991-01-23 |
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EP (1) | EP0496543B1 (ko) |
JP (1) | JP2697315B2 (ko) |
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US4300989A (en) * | 1979-10-03 | 1981-11-17 | Bell Telephone Laboratories, Incorporated | Fluorine enhanced plasma growth of native layers on silicon |
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JPH0657611B2 (ja) * | 1987-05-19 | 1994-08-03 | 工業技術院長 | 石英ガラス薄膜の製造方法 |
DE3937723A1 (de) * | 1989-11-13 | 1991-05-16 | Fraunhofer Ges Forschung | Verfahren und vorrichtung zum herstellen einer silikatschicht in einer integrierten schaltung |
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1991
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1992
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- 1992-01-17 DE DE69224924T patent/DE69224924T2/de not_active Expired - Fee Related
- 1992-01-21 KR KR1019920000782A patent/KR960000376B1/ko not_active IP Right Cessation
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KR920015484A (ko) | 1992-08-27 |
EP0496543B1 (en) | 1998-04-01 |
EP0496543A2 (en) | 1992-07-29 |
DE69224924T2 (de) | 1998-09-24 |
EP0496543A3 (en) | 1993-10-27 |
DE69224924D1 (de) | 1998-05-07 |
JPH04239750A (ja) | 1992-08-27 |
JP2697315B2 (ja) | 1998-01-14 |
US5215787A (en) | 1993-06-01 |
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