JP6663400B2 - 半導体装置の製造方法、基板処理装置およびプログラム - Google Patents
半導体装置の製造方法、基板処理装置およびプログラム Download PDFInfo
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- JP6663400B2 JP6663400B2 JP2017174089A JP2017174089A JP6663400B2 JP 6663400 B2 JP6663400 B2 JP 6663400B2 JP 2017174089 A JP2017174089 A JP 2017174089A JP 2017174089 A JP2017174089 A JP 2017174089A JP 6663400 B2 JP6663400 B2 JP 6663400B2
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Description
以下に本発明の第一の実施形態について説明する。
最初に図1を用いて本実施形態で処理する基板100について説明する。基板100上には、アルミニウムや銅等で構成される配線を有する下層配線層101が形成される。下層配線層101上には、層間絶縁層102が形成される。層間絶縁層102は例えばシリコン酸化膜(以下SiO膜)で構成されている。
基板処理装置200を構成するチャンバ202は、横断面が円形であり扁平な密閉容器として構成されている。また、チャンバ202は、例えばアルミニウム(Al)やステンレス(SUS)などの金属材料により構成されている。チャンバ202内には、基板としてのシリコンウエハ等の基板100を処理する処理空間201と、基板100を処理空間201に搬送する際に基板100が通過する搬送空間203とが形成されている。チャンバ202は、上部容器202aと下部容器202bで構成される。上部容器202aと下部容器202bの間には仕切り板204が設けられる。
図6を用いて供給系を説明する。共通ガス供給管242にはガス供給管243aが接続されている。ガス供給管243aには、上流方向から順に、第一ガス供給源243b、流量制御器(流量制御部)であるマスフローコントローラ(MFC)243c、及び開閉弁であるバルブ243dが設けられている。
チャンバ202の雰囲気を排気する排気系は、チャンバ202に接続された複数の排気管を有する。具体的には、搬送空間203と連通する排気管261と、処理空間201と連通される排気管262とを有する。また、各排気管の下流側には、排気管264が接続される。
次に、図7を用いてコントローラ280の詳細を説明する。基板処理装置200は、基板処理装置200の各部の動作を制御するコントローラ280を有している。
続いて図8を用いて、基板処理装置に搬入された基板100に保護膜107を形成する工程について説明する。なお、基板載置面211上に載置された基板100は図1の状態である。
基板搬入・載置工程S102を説明する。基板処理装置200では基板載置台212を基板100の搬送位置(搬送ポジション)まで下降させる。続いて、ゲートバルブ205を開いて搬送空間203を移載室(図示せず)と連通させる。そして、この移載室からウエハ移載機(図示せず)を用いて基板100を搬送空間203に搬入し、リフトピン207上に基板100を載置する。
基板移動工程S104を説明する。チャンバ202内に基板100を搬入したら、ウエハ移載機をチャンバ202の外へ退避させ、ゲートバルブ205を閉じてチャンバ202内を密閉する。その後、基板載置台212を基板処理ポジションまで移動する。リフトピン107上に載置された基板100は、基板載置台212の上昇と共に、基板載置面211に載置される。
続いて保護膜形成工程S106を説明する。ここでは、図3に記載の保護膜107を形成する。基板100が基板載置面211に載置され、所定の温度に加熱されたら、ガス供給系から処理空間201に、処理ガスとしてのHCDガスを供給する。なお、ここでいう所定の温度とは、少なくともポリイミド膜105から脱ガス106が発生する温度である。例えば80℃である。
保護膜形成工程S106が終了したら、基板搬出工程S108を実施する。基板搬出工程S108では、基板搬入・載置工程S102と逆の手順を行い、基板100を搬出する。
続いて図9から図12を用いて第2の実施形態を説明する。
図9は第2の実施形態における処理フローを示す。第2の実施形態での処理フローでは、第1の実施例における基板移動工程S104、保護膜形成工程S106が異なる。本実施形態においては、基板移動工程をS204とし、保護膜形成工程をS206として説明する。他の工程、装置構成は第1の実施形態と同様であるので説明を省略する。
基板移動工程S204を説明する。図10(a)のようにチャンバ202内に基板100を搬入したら、ウエハ移載機をチャンバ202の外へ退避させ、ゲートバルブ205を閉じてチャンバ202内を密閉する。その後、サセプタ昇降部218が基板載置台212を図10(b)に記載の基板処理ポジションまで移動する。それと並行して、図10(b)に記載のように、基板100が、基板100と基板載置面211が所定距離離れたポジションP1に位置するよう、リフトピン昇降部219がリフトピン207を上昇させる。ポジションP1では、基板100と基板載置面211との間の距離を第一の距離で離間させる。このとき、後述するように、基板100の温度は脱ガスが発生しない程度の第一の温度に加熱される。
続いて保護膜形成工程S206を説明する。ここでは第一温度処理工程S2062、第二温度処理工程S2064を行う。まずその理由について説明する。
第一温度処理工程S2062を説明する。基板100のポジションP1に維持するとともに、処理ガスを処理空間201に供給する。このとき、基板100の温度は脱ガスが発生しない程度の第一の温度に維持される。例えば、25℃(室温)に維持される。基板100の温度は、基板載置面211と基板100との距離および加熱時間で調整する。
第一温度処理工程S2062の後、リフトピン207を下降させ、基板載置面211と基板100との距離を第一の距離より短い第二の距離である第二のポジションP2とする。例えば、図10(c)のように基板100を基板載置面211に載置する。あるいは、基板載置面211から所定距離、離間させた状態とする。基板100はヒータ213に近づくため、第一温度処理工程S2062よりも高い第二の温度となる。第二の温度として、基板100はポリイミド膜105から脱ガス106が発生する程度の温度である80℃に調整される。
続いて図13を用いて第3の実施形態を説明する。
図13は図5に記載の構成に対して、更にマイクロ波供給部240を追加した図である。なお、図5と同様の番号については同様の構成であるため、説明を省略する。
マイクロ波供給部240を説明する。マイクロ波供給部240はマイクロ波供給源241と導波管242で構成される。導波管242は、上流側でマイクロ波供給源242に接続され、下流側で上部容器202aに接続される。マイクロ波供給源241から発せられたマイクロ波は基板100に照射されるよう構成される。
続いて、マイクロ波供給部240を用いた保護膜形成工程S206について説明する。ここでは、図3に記載の保護膜107を形成する。基板100が基板載置面に載置されたら、マイクロ波供給部240から基板100にマイクロ波を照射する。
上記実施形態においては塩素含有ガスとしてHCDガスを用いて説明したが、それに限るものではなく、アセチレン(C2H2)ガスやエチレン(C2H4)ガス等を用いてもよい。
103・・・パッド
107、112・・・保護膜
200・・・基板処理装置
201・・・処理空間
207・・・リフトピン
212・・・基板載置台
213・・・ヒータ
Claims (7)
- 導電膜と、前記導電膜を露出するように前記導電膜の外周に形成された絶縁膜とを有する基板を処理室に搬入する搬入工程と、
前記絶縁膜からの脱ガスと反応する成分を有する処理ガスを前記処理室に供給し、前記脱ガスと前記処理ガスとを反応させて、前記絶縁膜上に選択的に保護膜を形成する保護膜形成工程と
を有する半導体装置の製造方法。 - 前記保護膜形成工程では、
前記基板を第一の温度に維持した状態で前記処理室に前記処理ガスを供給して前記基板上に前記成分を含む前駆体を堆積させ、その後前記基板を前記第一の温度よりも高い第二の温度に維持して前記前駆体と前記絶縁膜から発生する脱ガスとを反応させ、前記保護膜を形成する
請求項1記載の半導体装置の製造方法。 - 前記処理室には、前記基板を載置する載置面を有する基板載置台と、前記基板と前記載置面との距離を設定可能な昇降部とが設けられ、
前記昇降部は、前記第一の温度に維持する際には前記基板と前記載置面が第一の距離となるよう第一のポジションに設定し、前記第二の温度に維持する際には前記基板と前記載置面が、前記第一の距離よりも短い第二の距離となるよう第二のポジションに設定する請求項2に記載の半導体装置の製造方法。 - 処理室には、マイクロ波供給部が設けられ、
前記保護膜形成工程では、前記処理室にマイクロ波を供給して前記保護膜を形成する請求項1に記載の半導体装置の製造方法。 - 前記成分はハロゲン成分である請求項1から4のうち、いずれか一項に記載の半導体装置の製造方法。
- 導電膜と、前記導電膜を露出するように前記導電膜の外周に形成された絶縁膜とを有する基板を載置する基板載置台を有する処理室と、
前記絶縁膜から脱ガスが発生する温度に加熱可能な加熱部と、
前記脱ガスと反応する成分を有する処理ガスを前記処理室に供給し前記脱ガスと前記処理ガスとを反応させて、前記絶縁膜上に選択的に保護膜を形成させるガス供給部と、
を有する基板処理装置。 - 導電膜と、前記導電膜を露出するように前記導電膜の外周に形成された絶縁膜とを有する基板を処理室に搬入する手順と、
前記絶縁膜からの脱ガスと反応する成分を有する処理ガスを前記処理室に供給し、前記脱ガスと前記処理ガスとを反応させて、前記絶縁膜上に選択的に保護膜を形成する手順とを
コンピュータによって基板処理装置に実行させるプログラム。
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