TWI652741B - 半導體裝置之製造方法、基板處理裝置及程式 - Google Patents

半導體裝置之製造方法、基板處理裝置及程式 Download PDF

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TWI652741B
TWI652741B TW106134213A TW106134213A TWI652741B TW I652741 B TWI652741 B TW I652741B TW 106134213 A TW106134213 A TW 106134213A TW 106134213 A TW106134213 A TW 106134213A TW I652741 B TWI652741 B TW I652741B
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carbon
substrate
gas supply
film
etching
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TW106134213A
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TW201824401A (zh
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小川有人
檜山真
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日商國際電氣股份有限公司
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

本發明之課題係提供一種可形成抗漏電流性及抗蝕刻性較高之電極側壁之技術。
為解決上述課題，本發明提供一種技術，其包括如下步驟：將具有閘極電極、及於上述閘極電極之側面作為側壁之一部分構成之絕緣膜之基板搬入至構成於腔室內之處理空間；及對上述處理空間供給含碳氣體，於上述絕緣膜之表面形成包含碳氮成分之抗蝕刻膜。

Description

半導體裝置之製造方法、基板處理裝置及程式
本發明係關於一種半導體裝置之製造方法、基板處理裝置及程式。
近年來，半導體裝置存在高積體化之傾向，且與之相伴地使電極間或配線間微細化。因此，於該等構成間電容不斷地變大。
眾所周知，一般而言隨著電容變大，漏電流將增加，但因半導體裝置之使用效率之問題，並不期望漏電流之增加。因此，例如於電極中，以於其周圍設置包含絕緣物之側壁，使抗漏電性提昇，抑制漏電流之產生之方式構成。
且說，於形成側壁時之蝕刻處理中，存在側壁被過度蝕刻之情況。若過度蝕刻導致側壁變薄，則存在漏電流增加之虞。作為對此之對策之一例，存在如專利文獻1所記載，使碳混入至側壁中，使抗蝕刻性提昇之技術。然而，因碳之添加導致介電係數之增加，故存在使漏電流增加之問題。
因此，本發明之目的在於提供一種可形成抗漏電流性及抗蝕刻性較高之電極側壁之技術。
[專利文獻1]日本專利特開2011-238894
為解決上述課題，本發明提供一種技術，其包括如下步驟：將具有閘極電極、及於上述閘極電極之側面作為側壁之一部分構成之絕緣膜之基板搬入至構成於腔室內之處理空間；及對上述處理空間供給含碳氣體，於上述絕緣膜之表面形成包含碳氮成分之抗蝕刻膜。
根據本發明之技術，可提供一種能夠形成抗漏電性及抗蝕刻性較高之電極側壁之技術。
100‧‧‧基板
101‧‧‧閘極電極
102‧‧‧絕緣膜；氮化矽膜
103‧‧‧抗蝕刻膜
104‧‧‧寬度
200、200'‧‧‧基板處理裝置
201‧‧‧處理空間
202‧‧‧腔室
202a‧‧‧上部容器
202b‧‧‧下部容器
203‧‧‧搬送空間
204‧‧‧間隔板
205‧‧‧閘閥
206‧‧‧基板搬入搬出口
207‧‧‧頂起銷
210‧‧‧基板支持部
211‧‧‧基板載置面
212‧‧‧基板載置台
213‧‧‧加熱器
214‧‧‧貫通孔
215‧‧‧孔
216‧‧‧支持板
217‧‧‧軸
218‧‧‧升降機構
219‧‧‧波紋管
220‧‧‧加熱器控制部；溫度控制部
230‧‧‧噴灑頭
231‧‧‧蓋
231a‧‧‧氣體導入孔
232‧‧‧緩衝空間
233‧‧‧支持塊
234‧‧‧分散板
234a‧‧‧貫通孔
241‧‧‧第一分散機構
241a‧‧‧前端部
241b‧‧‧凸緣
242‧‧‧共通氣體供給管
243、250‧‧‧電漿產生部
243a‧‧‧第一氣體供給管
243b‧‧‧第一氣體供給源
243c、244c、245c、246c、247c‧‧‧質量流量控制器
243d、244d、245d、246d、247d、266、275‧‧‧閥
243e‧‧‧電漿產生部
244‧‧‧第二氣體供給系統
244a‧‧‧第二氣體供給管
244b‧‧‧第二氣體供給源
244e‧‧‧遙距電漿部
245‧‧‧第三氣體供給系統
245a‧‧‧第三氣體供給管
245b‧‧‧第三氣體供給源；惰性氣體供給源
246a‧‧‧第一惰性氣體供給管
246b‧‧‧惰性氣體供給源
247a‧‧‧第二惰性氣體供給管
247b‧‧‧惰性氣體供給源；第二氣體供給源
251‧‧‧電源
252‧‧‧整合器
253、254‧‧‧絕緣物
261、262、264‧‧‧排氣管
265‧‧‧TMP
267‧‧‧DP
270‧‧‧上位裝置
276‧‧‧APC
280‧‧‧控制器
280a‧‧‧CPU
280b‧‧‧RAM
280c‧‧‧記憶裝置
280d‧‧‧I/O埠
280e‧‧‧收發指示部
280f‧‧‧內部匯流排
281‧‧‧輸入輸出裝置
282‧‧‧外部記憶裝置
283‧‧‧收發部
圖1係說明器件構造之說明圖。
圖2係說明器件構造之說明圖。
圖3係說明基板處理裝置之說明圖。
圖4係說明基板處理裝置之供給系統之說明圖。
圖5係說明基板處理裝置之控制器之說明圖。
圖6係說明基板之處理流程之說明圖。
圖7係說明基板處理裝置之供給系統之說明圖。
圖8係說明基板之處理流程之說明圖。
圖9係說明基板處理裝置之說明圖。
(第一實施形態)
以下，對本發明之第一實施形態進行說明。首先，使用圖1，對於本實施形態中進行處理之基板100之狀態進行說明。於基板100上形成有閘極電極101。閘極電極101係包含氮化鈦(TiN)膜或鎢(W)膜。於閘極電極之周圍，形成有作為側壁構成之絕緣膜102。絕緣膜102係含氮之矽層，例如包含氮化矽(SiN)膜。
絕緣膜102構成為不含碳成分。因此，作為未添加碳之氮化矽膜，亦將含氮之矽層稱為未添加碳之含氮之矽層。因未添加碳，故可抑制漏電流之增加。
繼而，使用圖2，對於本實施形態中形成之含碳氮之矽層進行說明。於下述含碳氮之矽層形成步驟中，於作為含氮之矽層之絕緣膜102表面，形成作為含碳氮之矽層之抗蝕刻膜103。抗蝕刻膜103係作為側壁之一部分而構成。
抗蝕刻膜103因如下所述含有碳成分而為抗蝕刻性較高之膜。另一方面，若含有碳成分則如上所述導致漏電流之增加，故而於不與閘極電極101接觸之狀態下形成。抗蝕刻膜103因此種性質而形成於作為與蝕刻氣體接觸且不與閘極電極接觸之部分之部位。具體而言，抗蝕刻膜103自閘極電極101觀察形成於絕緣膜102之外周。再者，含碳氮之矽層亦稱為添加碳之含氮之矽層。
繼而，使用圖3、圖4，對於本實施形態中形成抗蝕刻膜103之基板處理裝置200進行說明。
<基板處理裝置>
構成基板處理裝置200之腔室202係作為橫剖面為圓形且扁平之密閉容器構成。又，腔室202係包含例如鋁(Al)或不鏽鋼(SUS) 等金屬材料。於腔室202內，形成有對作為基板之矽晶圓等基板100進行處理之處理空間201、及於將基板100搬送至處理空間201時基板100通過之搬送空間203。腔室202係包含上部容器202a及下部容器202b。於上部容器202a與下部容器202b之間設置間隔板204。
於下部容器202b之側面設置有鄰接於閘閥205之基板搬入搬出口206，基板100經由基板搬入搬出口206於與未圖示之搬送室之間移動。於下部容器202b之底部設置有數個頂起銷207。
於處理空間201內，設置有支持基板100之基板支持部210。基板支持部210主要具有載置基板100之載置面211、於表面具有載置面211之載置台212、基板載置台212中內含之作為加熱源之加熱器213。於基板載置台212，在與頂起銷207對應之位置分別設置有頂起銷207將貫通之貫通孔214。於加熱器213連接有控制通電情況之加熱器控制部220。
基板載置台212係由軸217支持。軸217之支持部將設置於腔室202之底壁之孔215貫通，進而經由支持板216於腔室202之外部連接於升降機構218。可藉由使升降機構218作動，使軸217及基板載置台212升降，而使載置於基板載置面211上之基板100升降。再者，軸217下端部之周圍係被波紋管219覆蓋。腔室202內被氣密地保持。
基板載置台212係於基板100之搬送時，下降至基板載置面211與基板搬入搬出口206對向之位置(晶圓搬送位置、晶圓搬送部位)，且於基板100之處理時，如圖3所示，上升至基板 100成為處理空間201內之處理位置(晶圓處理位置、晶圓處理部位)。
於處理空間201之上部(上游側)，設置有作為氣體分散機構之噴灑頭230。於噴灑頭230之蓋231設置被插入第一分散機構241之貫通孔234a。第一分散機構241具有插入至噴灑頭內之前端部241a、及固定於蓋231之凸緣241b。前端部241a係柱狀，例如構成為圓柱狀。於圓柱之側面設置有分散孔。自下述氣體供給部(供給系統)供給之氣體係經由前端部241a供給至緩衝空間232。
噴灑頭230具備用以使氣體分散之作為第二分散機構之分散板234。該分散板234之上游側為緩衝空間232，下游側為處理空間201。於分散板234設置有數個貫通孔234a。分散板234係以與基板載置面211對向之方式配置。
上部容器202a具有凸緣，且於凸緣上載置並固定支持塊233。支持塊233具有凸緣，且於凸緣上載置並固定分散板234。
(供給系統)
於設置於噴灑頭230之蓋231之氣體導入孔231a裝入第一分散機構241。於第一分散機構241連接有共通氣體供給管242。於第一分散機構241設置凸緣，且藉由螺絲等，而將該凸緣固定於蓋231或共通氣體供給管242之凸緣。
第一分散機構241與共通氣體供給管242係於管之內部連通，自共通氣體供給管242供給之氣體係經由第一分散機構241、氣體導入孔231a供給至噴灑頭230內。於共通氣體供給管242連接有第一氣體供給管243a。
(第一氣體供給系統)
於第一氣體供給管243a，自上游方向依序設置有第一氣體供給源243b、作為流量控制器(流量控制部)之質量流量控制器(MFC)243c、及作為開閉閥之閥243d。
自第一氣體供給管243a，將含有第一元素之氣體(以下為「含第一元素氣體」)經由質量流量控制器243c、閥243d、共通氣體供給管242供給至噴灑頭230。
含第一元素氣體係改質氣體、即處理氣體之一。此處，第一元素例如為碳(C)。即，含第一元素氣體例如為含碳氣體。具體而言，使用丙烯(C3H6)、乙烯(C2H4)氣體作為含碳氣體。
於第一氣體供給管243a之較閥243d更靠下游側連接有第一惰性氣體供給管246a之下游端。於第一惰性氣體供給管246a，自上游方向依序設置有惰性氣體供給源246b、質量流量控制器(MFC)246c、及閥246d。惰性氣體係作為載氣或稀釋氣體發揮作用。
此處，惰性氣體例如為氮氣(N2)。再者，作為惰性氣體，除了N2氣體以外，例如亦可使用氦氣(He)、氖氣(Ne)、氬氣(Ar)等稀有氣體。
第一氣體供給系統243主要包含第一氣體供給管243a、質量流量控制器243c、及閥243d。第一氣體供給系統243亦稱為第一氣體供給部。
又，第一惰性氣體供給系統主要包含第一惰性氣體供給管246a、質量流量控制器246c及閥246d。再者，亦可考慮將惰 性氣體供給源246b、第一氣體供給管243a包含於第一惰性氣體供給系統。
進而，亦可考慮將第一氣體供給源243b、第一惰性氣體供給系統包含於第一氣體供給系統243。
(排氣部)
將腔室202之氛圍進行排氣之排氣系統具有連接於腔室202之數個排氣管。具體而言，具有與搬送空間203連通之排氣管261、及與處理空間201連通之排氣管262。又，於各排氣管之下游側連接排氣管264。
排氣管261係設置於搬送空間203之側方。於排氣管261設置渦輪分子泵(TMP，Turbo Morecular Pump)265及閥266。藉由TMP265與閥266之協動而控制搬送空間203之氛圍。
排氣管262係設置於處理空間201之側方。於排氣管262設置將處理空間201內控制為既定壓力之壓力控制器即自動壓力控制器(APC，Auto Pressure Controller)276。APC276係根據來自下述控制器280之指示調整排氣管262之導流。又，於排氣管262中，在APC276之上游側設置閥275。將排氣管262與閥275、APC276總稱為處理空間排氣部。
於排氣管264設置乾式真空泵(DP，Dry Pump)267。如圖所示，於排氣管264，自其上游側連接排氣管262、排氣管261，進而，於該等排氣管262、排氣管261之下游設置DP278。DP278係經由排氣管262、排氣管261之各者，將處理空間201及搬送空間203各自之氛圍進行排氣。
(控制器)
其次，使用圖5，對控制器280之詳細情況進行說明。基板處理裝置200具有控制基板處理裝置200之各部之動作之控制器280。
將控制器280之概略示於圖5。作為控制部(控制手段)之控制器280構成為具備中央處理單元(CPU，Central Processing Unit)280a、隨機存取記憶體(RAM，Random Access Memory)280b、作為記憶部之記憶裝置280c、輸入/輸出(I/O，Input/Output)埠280d的電腦。RAM280b、記憶裝置280c、I/O埠280d構成為可經由內部匯流排280f而與CPU280a進行資料交換。基板處理裝置200內之資料之收發藉由亦為CPU280a之一個功能之收發指示部280e之指示而進行。
控制器280中可連接地構成有例如包含觸控面板等之輸入輸出裝置281、或外部記憶裝置282。進而，設置經由網路連接於上位裝置270之收發部283。
記憶裝置280c包含例如快閃記憶體、硬式磁碟機(HDD，Hard Disk Drive)等。於記憶裝置280c內，以可讀出地儲存有控制基板處理裝置之動作之控制程式、或者記載有下述基板處理之流程或條件等之製程配方、及下述表格等。再者，製程配方係以可使控制器280執行下述基板處理步驟中之各流程獲得既定結果之方式組合而成者，從而作為程式發揮功能。以下，亦將該製程配方或控制程式等簡單地統稱為程式。再者，於本說明書中使用「程式」一詞之情形包括僅包含製程配方單個之情形、僅包含控制程式單個之情形、或包含該兩者之情形。又，RAM280b構成為暫時地保持 由CPU280a讀出之程式或資料等之記憶體區域(工作區)。
I/O埠280d係連接於閘閥205、升降機構218、加熱器213等基板處理裝置200之各構成。
CPU280a構成為將來自記憶裝置280c之控制程式讀出執行，並且根據來自輸入輸出裝置281之操作指令之輸入等自記憶裝置280c讀出製程配方。而且，CPU280a構成為能夠以依照被讀出之製程配方之內容之方式，控制閘閥205之開閉動作、升降機構218之升降動作、各泵之開關控制、質量流量控制器之流量調整動作、及閥等。作為製程配方，記錄有對應於各基板之配方。該等配方構成為自上位裝置等接收到對各基板進行處理之指示後將上述指示讀出。
再者，控制器280可藉由使用儲存有上述程式之外部記憶裝置(例如硬碟等磁碟、數位多功能光碟(DVD，Digital Versatile Disc)等光碟、可讀寫式光碟機(MO，Magnetic Optical)等光磁碟、通用序列匯流排(USB，Universal Serial Bus)記憶體等半導體記憶體)282將程式安裝於電腦等，而構成本實施形態之控制器280。再者，用以對電腦供給程式之手段並不限於經由外部記憶裝置282供給之情形。例如，亦可使用網際網路或專用線路等通信手段而不經由外部記憶裝置282供給程式。再者，記憶裝置280c或外部記憶裝置282構成為電腦可讀取之記錄媒體。以下，亦將其等簡單地統稱為記錄媒體。再者，於本說明書中使用「記錄媒體」一詞之情形包括僅包含記憶裝置280c單體之情形、僅包含外部記憶裝置282單體之情形、或包含該兩者之情形。
<基板處理方法>
繼而，使用圖6，對在已搬入至基板處理裝置之基板100之絕緣膜102上形成抗蝕刻膜103之方法進行說明。再者，所搬入之基板100為圖1之狀態。
以下，對使用作為含碳氣體之丙烯氣體作為第一處理氣體而形成抗蝕刻膜103之例進行說明。
(基板搬入、載置步驟S102)
於基板處理裝置200中，使基板載置台212下降至基板100之搬送位置(搬送部位)。繼而，打開閘閥205，使搬送空間203與移載室(未圖示)連通。繼而，使用晶圓移載機(未圖示)將基板100自該移載室搬送至搬送空間203，並將基板100移載至基板載置台212上。
若將基板100搬入至腔室202內，則使晶圓移載機退避至腔室202之外，並關閉閘閥205而將腔室202內密閉。其後，使基板載置台212上升，而使基板100上升至上述處理空間201內之處理位置(基板處理部位)。
若基板100於搬入至搬送空間203後上升至處理空間201內之處理位置，則將閥266設為關閉。藉此，將搬送空間203與TMP265之間阻斷，從而結束藉由TMP265進行之搬送空間203之排氣。另一方面，打開閥275，而使處理空間201與APC276之間連通。APC276藉由調整排氣管262之導流，而控制藉由DP267之處理空間201之排氣流量，從而將處理空間201維持於既定壓力(例如10-5~10-1Pa之高真空)。
又，於已將基板100載置於基板載置台212之上時，對埋入於基板載置台212之內部之加熱器213供給電力，並以基板100之表面成為既定溫度之方式進行控制。基板100之溫度例如為室溫以上且800℃以下，較佳為室溫以上且700℃以下。此時，加熱器213之溫度係藉由控制器280基於由溫度感測器檢測出之溫度資訊抽取控制值並利用溫度控制部220控制對加熱器213之通電情況而調整。
(含碳氣體供給步驟S104)
繼而，進行含碳氣體供給步驟S104。於含碳氣體供給步驟S104中，將作為含碳氣體之丙烯自第一氣體供給系統供給至腔室202。由於丙烯係經由電漿產生部243e而供給，故而對基板100供給電漿狀態之丙烯。
丙烯藉由被設為電漿狀態而分離成氫成分與碳成分。其中之碳成分被供給至氮化矽層表層，而與表層中之氮及矽鍵結，藉此如圖2所記載般，形成由含碳氮之矽層構成之抗蝕刻膜103。
抗蝕刻膜103由於為含有碳者，故而可使抗蝕刻性提昇。因此，抗蝕刻膜103之抗蝕刻性較不存在碳成分、或碳成分之含有率少於抗蝕刻膜之氮化矽膜102高。
於含碳氣體供給步驟S104中，將處理空間201之壓力設為100Pa~1000Pa，將基板100之溫度設為150℃~400℃，並且將含碳氣體之流量設為1000sccm~3000sccm。若經過由既定時間形成所需膜厚之含碳氮之矽層，則停止丙烯之供給。
較理想為以絕緣膜102之膜厚可確保至少3nm至4nm之方式，調整抗蝕刻膜103之厚度。該膜厚係於量子力學上漏電流不洩漏之厚度。又，抗蝕刻膜103構成為薄於絕緣膜102。可藉由使抗蝕刻膜103變薄而確保絕緣膜102間之寬度104，故而即便鄰接之電極間之距離變短，亦可確保絕緣性。
(基板搬出步驟S106)
含碳氣體供給步驟S104結束後，實施基板搬出步驟S106。於基板搬出步驟S106中，進行與基板搬入、載置步驟S102相反之流程，將基板100搬出。
可藉由以此方式於絕緣膜102之外周形成抗蝕刻膜103，而形成將漏電流抑制且具有抗蝕刻性之膜。
(第2實施形態)
繼而，使用圖7、圖8，對第2實施形態進行說明。圖7表示第2實施形態中之氣體供給部，圖8表示第2實施形態中之基板處理流程。與第一實施形態不同之處係包含第二氣體供給系統及第三氣體供給系統之方面、以及包括含氮氣體供給步驟之方面。
繼而，對具體內容進行說明。再者，對於與第1實施形態同樣之構成省略說明。
(第二氣體供給系統)
第二氣體供給系統稱為第二氣體供給部。於第二氣體供給管244a，自上游方向依序設置有第二氣體供給源244b、質量流量控制 器(MFC)244c、及閥244d。
自第二氣體供給管244a，將含有第二元素之氣體(以下為「含第二元素氣體」)經由質量流量控制器244c、閥244d、共通氣體供給管242供給至噴灑頭230內。
含第二元素氣體係處理氣體之一種。含第二元素氣體具有將含碳氣體供給步驟S104中形成之抗蝕刻膜103中所含之雜質去除之性質。含第二元素氣體含有與第一元素不同之第二元素。第二元素係含氮氣體、例如氨(NH3)。
第二氣體供給系統244主要包含第二氣體供給管244a、質量流量控制器244c、閥244d。
又，於第二氣體供給管244a之較閥244d更靠下游側，連接有第二惰性氣體供給管247a之下游端。於第二惰性氣體供給管247a，自上游方向依序設置有惰性氣體供給源247b、質量流量控制器(MFC)247c、及閥247d。
自第二惰性氣體供給管247a，將惰性氣體經由質量流量控制器247c、閥247d、第二氣體供給管247a供給至噴灑頭230內。惰性氣體係於碳氣體供給步驟(S104)中作為載氣或稀釋氣體發揮作用。
第二惰性氣體供給系統主要包括第二惰性氣體供給管247a、質量流量控制器247c及閥247d。再者，亦可考慮將惰性氣體供給源247b包含於第二惰性氣體供給系統。
進而，亦可考慮將第二氣體供給源247b、第二惰性氣體供給系統包含於第二氣體供給系統244。
(第三氣體供給系統)
第三氣體供給系統係稱為第三氣體供給部。於第三氣體供給管245a，自上游方向依序設置有第三氣體供給源245b、作為流量控制器(流量控制部)之質量流量控制器(MFC)245c、及作為開閉閥之閥245d。
自第三氣體供給管245a，將作為沖洗氣體之惰性氣體經由質量流量控制器245c、閥245d、共通氣體供給管242供給至噴灑頭230。
自惰性氣體供給源245b供給之惰性氣體係於基板處理步驟中作為沖洗滯留於腔室202或噴灑頭230內之氣體之沖洗氣體發揮作用。
第三氣體供給系統主要包括第三氣體供給管245a、質量流量控制器245c及閥245d。再者，亦可考慮將第三氣體供給源245b包含於第三氣體供給系統中。
(含氮氣體供給步驟S105)
繼而，對含氮氣體供給步驟S105進行說明。含氮氣體供給步驟S105係於第一實施形態中之含碳氣體供給步驟S104之後進行。
於含碳氣體供給步驟S104之後，將惰性氣體自第三氣體供給系統245供給至處理空間201，將處理空間201中之含碳氣體氛圍進行排氣。
於將含碳氣體氛圍進行排氣後，將氨氣自第二氣體供給系統244供給至處理空間201。氨氣係例如於遙距電漿部244e中設為電漿狀態，且以分解為氫成分與氮成分之狀態供給至處理空 間201。
此處，對含碳氣體供給步驟S104之後實施含氮氣體供給步驟S105之原因進行說明。於構成處理空間201之壁或基板載置台等零件為石英製之情形時，存在石英被電漿侵蝕而析出氧成分之情況。又，存在於更換基板時沖洗氣體中包含氧成分之情況。於此情形時，作為含碳膜之抗蝕刻膜103之表面與氧成分反應，於抗蝕刻膜103表面形成包含氧成分之含碳氮之矽層。可認為氧成分對抗蝕刻膜103而言為雜質，從而包含氧成分之含碳氮之矽層導致抗蝕刻性能降低。
因此，於本實施形態中，供給含氮氣體，與包含氧成分之含碳氮之矽層進行反應，將氮成分與氧成分置換。具體而言，使氧成分與氮成分反應形成NO氣體，並且於氧之鍵被切斷之部位使氮鍵結。可藉此處理而使含碳氮層表面之氮濃度較含氧時提昇，從而使抗蝕刻性能提昇。
(第三實施形態)
繼而，對第三實施形態進行說明。第三實施形態係於圖3中記載之基板處理裝置200之構造中，主要於處理空間201中追加可直接產生電漿之構造之方面不同。具體而言，如圖9中記載之基板處理裝置200'所記載，追加電漿產生部250、及連接於基板載置台212之地線等構成。
電漿產生部250主要包含電源251及整合器252。電源251係與整合器不同之側連接於地線。電源251係經由整合器252電性連接於分散板234。分散板234構成為介隔絕緣物253而與上 部容器202a鄰接，且介隔絕緣物254而與蓋231鄰接。即，分散板234係相對於蓋231及上部容器202a電性絕緣。
於處理空間201中產生電漿時，自電源251供給電力，將供給至處理空間201中之氣體設為電漿狀態。
設為電漿狀態之氣體係例如於含碳氣體供給步驟S104中供給之含碳氣體。可藉由於基板100上產生能量較高之電漿而使碳成分成為較密之狀態，於絕緣膜102上形成抗蝕刻膜103。
又，如普遍所知，丙烯等含碳氣體具有容易附著於石英之性質。因此，若電漿產生部與基板之距離較遠，則導致丙烯等氣體附著於中途之石英零件，從而存在對於基板100之到達效率變差之問題。即，含碳氣體之使用效率變差。
相對於此，可藉由如本實施形態所述於基板100之附近產生電漿而使丙烯確實地到達基板100，從而可提昇含碳氣體之使用效率。
再者，於上述實施形態中，使用丙烯氣體作為含碳氣體進行了說明，但並不限於此，亦可使用乙炔(C2H2)氣體或乙烯(C2H4)氣體等。
(主要效果)
以下記載伴隨以上實施形態之主要效果。
(a)因可於電極周圍之氮化矽膜表面形成含碳之氮化矽膜，故而可同時地達成漏電流之抑制與抗蝕刻性能之提昇。
(b)因於形成含碳之氮化矽膜後進行氮化處理，故而可進一步提昇氮密度，使抗蝕刻性提昇。

Claims (13)

  1. 一種半導體裝置之製造方法，其包括如下步驟：將具有閘極電極、及於上述閘極電極之側面作為側壁之一部分所構成之絕緣膜的基板搬入至構成於腔室內之處理空間之步驟；及對上述處理空間供給含碳氣體，於上述絕緣膜之表面形成包含碳氮成分之抗蝕刻膜之步驟；於形成上述抗蝕刻膜之步驟之後，進一步具有供給含氮氣體之含氮氣體供給步驟。
  2. 如請求項1之半導體裝置之製造方法，其中，上述抗蝕刻膜之含碳率係構成為高於上述絕緣膜。
  3. 如請求項2之半導體裝置之製造方法，其中，於形成上述抗蝕刻膜之步驟中，使上述含碳氣體成為電漿狀態，對上述絕緣膜表面供給上述含碳氣體之碳成分。
  4. 如請求項3之半導體裝置之製造方法，其中，於使上述含碳氣體成為電漿狀態時，係於上述處理空間中作成為電漿狀態。
  5. 如請求項3之半導體裝置之製造方法，其中，於形成抗蝕刻膜之步驟中，上述抗蝕刻膜係形成為較上述絕緣膜薄。
  6. 如請求項2之半導體裝置之製造方法，其中，於形成抗蝕刻膜之步驟中，上述抗蝕刻膜係形成為較上述絕緣膜薄。
  7. 如請求項1之半導體裝置之製造方法，其中，於形成上述抗蝕刻膜之步驟中，使上述含碳氣體成為電漿狀態，對上述絕緣膜表面供給上述含碳氣體之碳成分。
  8. 如請求項7之半導體裝置之製造方法，其中，於使上述含碳氣體成為電漿狀態時，係於上述處理空間中作為電漿狀態。
  9. 如請求項8之半導體裝置之製造方法，其中，於形成抗蝕刻膜之步驟中，上述抗蝕刻膜係形成為較上述絕緣膜薄。
  10. 如請求項7之半導體裝置之製造方法，其中，於形成抗蝕刻膜之步驟中，上述抗蝕刻膜係形成為較上述絕緣膜薄。
  11. 如請求項1之半導體裝置之製造方法，其中，於形成抗蝕刻膜之步驟中，上述抗蝕刻膜係形成為較上述絕緣膜薄。
  12. 一種基板處理裝置，其包含：基板載置台，其載置具有閘極電極、及於上述閘極電極之側面作為側壁之一部分所構成之絕緣膜的基板；腔室，其係內含上述基板載置台；及氣體供給部，其係與上述腔室連通，且以於上述含氮之矽層之表面形成抗蝕刻膜之方式，對構成於上述腔室內之處理空間至少供給含碳氣體；又，於形成上述抗蝕刻膜之後，進而供給含氮氣體。
  13. 一種程式，其係藉由電腦而使基板處理裝置執行如下處理：將具有閘極電極、及於上述閘極電極之側面作為側壁之一部分所構成之絕緣膜的基板搬入至構成於腔室內之處理空間；對上述處理空間供給含碳氣體，於上述絕緣膜之表面形成抗蝕刻膜；及於形成上述抗蝕刻膜之後，進而供給含氮氣體。
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US20180182619A1 (en) 2018-06-28
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