CN108257862A - 半导体器件的制造方法、衬底处理装置及存储介质 - Google Patents

半导体器件的制造方法、衬底处理装置及存储介质 Download PDF

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Publication number
CN108257862A
CN108257862A CN201711377353.3A CN201711377353A CN108257862A CN 108257862 A CN108257862 A CN 108257862A CN 201711377353 A CN201711377353 A CN 201711377353A CN 108257862 A CN108257862 A CN 108257862A
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manufacturing
semiconductor devices
film
gas
devices according
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CN108257862B (zh
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小川有人
桧山真
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Kokusai Electric Corp
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Hitachi Kokusai Electric Inc
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Abstract

本发明涉及半导体器件的制造方法、衬底处理装置及存储介质。本发明要解决的课题为提供能够形成耐漏电流性及耐蚀刻性高的电极侧壁的技术。为解决上述课题，提供具有下述工序的技术：将下述衬底搬入在腔室内构成的处理空间的工序，所述衬底具有栅电极、和在所述栅电极的侧面作为侧壁的一部分而构成的绝缘膜；和向所述处理空间供给含碳气体，在所述绝缘膜的表面上形成包含碳氮成分的耐蚀刻膜的工序。

Description

半导体器件的制造方法、衬底处理装置及存储介质
技术领域
本发明涉及半导体器件的制造方法、衬底处理装置及程序。
背景技术
近年来，半导体器件具有高度集成化的趋势，随之而来的是，电极间、布线间的微细化。因此，在这些构成间，电容已逐渐变大。
发明内容
发明要解决的课题
通常，已知的是漏电流随着电容增大而增加，但考虑到半导体器件的使用效率的问题，不期望出现漏电流的增加。因此，对于例如电极而言，构成为在其周围设置由绝缘物构成的侧壁从而提高耐泄露性(leak resistance)，抑制漏电流的发生。
然而，在形成侧壁时的蚀刻处理中，侧壁有时被过度地蚀刻。若被过度地蚀刻而侧壁变薄，则漏电流恐怕会增加。作为针对此的应对方案的一例，如专利文献1所记载的，有在侧壁中混入碳从而提高耐蚀刻性的技术。然而，碳的添加与介电常数的增加相关，因此存在增加漏电流的问题。
因此，本发明的目的在于，提供能形成耐漏电流性及耐蚀刻性高的电极侧壁的技术。
专利文献1：日本特开2011-238894
用于解决课题的手段
为解决上述课题而提供具有下述工序的技术：将下述衬底搬入在腔室内构成的处理空间的工序，所述衬底具有栅电极、和在所述栅电极的侧面作为侧壁的一部分而构成的绝缘膜；和向所述处理空间供给含碳气体，在所述绝缘膜的表面上形成包含碳氮成分的耐蚀刻膜的工序。
发明效果
通过本发明涉及的技术，可提供能够形成耐泄露性及耐蚀刻性高的电极侧壁的技术。
附图说明
图1：为说明器件构造的说明图。
图2：为说明器件构造的说明图。
图3：为说明衬底处理装置的说明图。
图4：为说明衬底处理装置的供给系统的说明图。
图5：为说明衬底处理装置的控制器的说明图。
图6：为说明衬底的处理流程的说明图。
图7：为说明衬底处理装置的供给系统的说明图。
图8：为说明衬底的处理流程的说明图。
图9：为说明衬底处理装置的说明图。
附图标记说明
100···衬底
101···栅电极
102···绝缘膜
103···耐蚀刻膜
200···衬底处理装置
201···处理空间
202···腔室
具体实施方式
(第一实施方式)
以下，对本发明的第一实施方式进行说明。
首先，使用图1对在本实施方式中处理的衬底100的状态进行说明。在衬底100上，形成有栅电极101。栅电极101由氮化钛(TiN)膜和/或钨(W)膜构成。在栅电极的周围，形成有作为侧壁而构成的绝缘膜102。绝缘膜102为含氮硅层，例如由氮化硅(SiN)膜构成。
绝缘膜102构成为不含碳成分。因而，由于是未添加碳的氮化硅膜，因此，也将含氮硅层称为碳无添加含氮硅层。由于未添加碳，因此能够抑制漏电流的增加。
接下来，使用图2，说明在本实施方式中形成的含碳氮的硅层。通过后述的含碳氮的硅层形成工序，而在作为含氮硅层的绝缘膜102表面上，形成作为含碳氮的硅层的耐蚀刻膜103。耐蚀刻膜103构成为侧壁的一部分。
对于耐蚀刻膜103而言，如后文所述，由于含有碳成分，因此是耐蚀刻性高的膜。另一方面，若含有碳成分，则如前文所述，会导致漏电流的增加，因此，耐蚀刻膜103是以不与栅电极101接触的状态形成的。由于具有如上所述的性质，因此，耐蚀刻膜103形成在与蚀刻气体接触的部分并且不与栅电极接触的部分的位置。具体而言，从栅电极101观察，耐蚀刻膜103形成于绝缘膜102的外周。需要说明的是，含碳氮的硅层也称为碳添加含氮硅层。
接下来，使用图3、图4，对通过本实施方式来形成耐蚀刻膜103的衬底处理装置200进行说明。
＜衬底处理装置＞
构成衬底处理装置200的腔室202，是作为横截面为圆形且扁平的密闭容器而构成的。另外，腔室202是用例如铝(Al)、不锈钢(SUS)等金属材料构成的。腔室202内形成有对作为衬底的硅晶片等衬底100进行处理的处理空间201和在将衬底100向处理空间201搬送时供衬底100通过的搬送空间203。腔室202由上部容器202a和下部容器202b构成。上部容器202a与下部容器202b之间设有隔板204。
在下部容器202b的侧面设有与闸阀205邻接的衬底搬入搬出口206，衬底100经由衬底搬入搬出口206而在下部容器202b与未图示的搬送室之间移动。下部容器202b的底部设有多个提升销207。
在处理空间201内设有对衬底100进行支承的衬底支承部210。衬底支承部210主要具有载置衬底100的载置面211、在表面具有载置面211的载置台212和内置于衬底载置台212的作为加热源的加热器213。衬底载置台212上的与提升销207相对应的位置上分别设有供提升销207贯穿的贯穿孔214。在加热器21上连接控制通电情况的加热器控制部220。
衬底载置台212由轴217支承。轴217的支承部贯穿孔215(其设于腔室202底壁)，进而借助支承板216在腔室202外部连接于升降机构218。通过使升降机构218工作从而使轴217及支承台212进行升降，能够使载置于衬底载置面211之上的衬底100升降。需要说明的是，轴217下端部的四周由波纹管219覆盖着。腔室202内被气密地保持。
在搬送衬底100时，衬底载置台212下降到衬底载置面211对着衬底搬入搬出口206的位置(晶片搬送位置，晶片搬送POSITION)，在处理衬底100时，如图7所示，衬底载置台212上升至衬底100到达处理空间201内的处理位置(晶片处理位置，晶片处理POSITION)。
处理空间201的上部(上游侧)设有作为气体分散机构的簇射头230。簇射头230的盖231上设有供第一分散机构241插入的贯穿孔231a。第一分散机构241具有插入到簇射头内的前端部241a和固定于盖231的凸缘241b。前端部241a为柱状，例如构成为圆柱状。圆柱的侧面设有分散孔。从后述的气体供给部(供给系统)供给的气体经由前端部241a供给到缓冲空间232中。
簇射头230具备作为用于将气体分散的第二分散机构的分散板234。该分散板234的上游侧为缓冲空间232，下游侧为处理空间201。分散板234上设有多个贯穿孔234a。分散板234以对着衬底载置面211的方式配置。
上部容器202a具有凸缘，凸缘之上载置、固定有支承块233。支承块233具有凸缘233a，凸缘233a之上载置、固定有分散板234。
(供给系统)
设于簇射头230的盖231上的气体导入孔231a中连接有第一分散机构241。第一分散机构241上连接有共用气体供给管242。第一分散机构241上设有凸缘，利用螺钉等固定于盖231、共用气体供给管242的凸缘。
第一分散机构241与共用气体供给管242在管的内部连通，从共用气体供给管242供给的气体，经由第一分散机构241、气体导入孔231a供给到簇射头230内。共用气体供给管242上连接有第一气体供给管243a。
(第一气体供给系统)
第一气体供给管243a上从上游方向起依次设有第一气体供给源243b、作为流量控制器(流量控制部)的质量流量控制器(MFC)243c以及作为开关阀的阀243d。
含有第一元素的气体(以下，“含第一元素气体”)从第一气体供给管243a经由质量流量控制器243c、阀243d、共用气体供给管242而被供给到簇射头230。
含第一元素气体为改质气体、即处理气体之一。这里，第一元素为例如碳(C)。即，含第一元素气体为例如含碳气体。具体而言，作为含碳气体，可使用丙烯(C3H6)、乙烯(C2H4)气体。
在第一气体供给管243a的比阀243d靠下游侧连接有第一非活性气体供给管246a的下游端。第一非活性气体供给管246a上从上游方向起依次设有非活性气体供给源246b、质量流量控制器(MFC)246c以及阀246d。非活性气体作为载气或者稀释气体而发挥作用。
这里，非活性气体为例如氮(N2)气。此外，作为非活性气体，除了N2气，还可以用例如氦(He)气、氖(Ne)气、氩(Ar)气等稀有气体。
第一气体供给系统243主要由第一气体供给管243a、质量流量控制器243c、阀243d构成。第一气体供给系统243也称为第一气体供给部。
另外，第一非活性气体供给系统主要由第一非活性气体供给管246a、质量流量控制器246c及阀246d构成。需要说明的是，也可以认为非活性气体供给源246b、第一气体供给管243a包含在第一非活性气体供给系统中。
此外，也可以认为第一气体供给源243b、第一非活性气体供给系统包含在第一气体供给系统243中。
(排气部)
将腔室202的气氛排出的排气系统具有连接于腔室202的多个排气管。具体而言，具有与搬送空间203连通的排气管261、和与处理空间201连通的排气管262。另外，在各排气管的下游侧连接排气管264。
排气管261设于搬送空间203的侧方。在排气管261上设置有TMP(Turbo MorecularPump(涡轮分子泵))265和阀266。通过TMP265和阀266的协同工作，来控制搬送空间203的气氛。
排气管262设于处理空间201的侧方。排气管262上设有作为压力控制器的APC(Auto Pressure Controller)276，该APC将处理空间201内控制在规定压力。APC276根据来自后述的控制器280的指令来调节排气管262的流导。另外，在排气管262上，在APC276的上游侧设有阀275。将排气管262与阀275、APC276汇总称为处理室排气部。
在排气管264上，设有DP(Dry Pump。干泵)267。如图所示，在排气管264上，从其上游侧起连接有排气管262、排气管261，此外，在它们的下游设有DP278。DP278分别经由排气管262、排气管261而将处理空间201及搬送空间203的各自的气氛排出。
(控制器)
下面，使用图5对控制器280的详情进行说明。衬底处理装置10具有控制衬底处理装置10的各部的动作的控制器280。
控制器280的概略示于图5。作为控制部(控制部件)的控制器280以具有CPU(Central Processing Unit)280a、RAM(Random Access Memory)280b、作为存储部的存储装置280c、I/O端口280d的计算机的形式构成。RAM280b、存储装置280c、I/O端口280d构成为能够经由内部总线280f而与CPU280a进行数据交换。衬底处理装置10内的数据的发送接收按照发送接收指示部280e的指示(其也是CPU280a的一个功能)来进行。
构成为能够在控制器280上连接由例如触控面板等构成的输入输出装置281、外部存储装置282。此外，在上位装置270上设有经由网络而连接的发送接收部283。
存储装置280c由例如闪存、HDD(Hard Disk Drive)等构成。在存储装置280c内，以能够读取的方式存储有控制衬底处理装置的动作的控制程序、记载有后述的衬底处理的步骤、条件等的工艺制程、后述的表格等。需要说明的是，工艺制程是以使控制器280执行后述的衬底处理工序中的各步骤、并能够得到规定结果的方式组合而成的，作为程序而发挥功能。以下，也将该工艺制程、控制程序等统一简称为程序。需要说明的是，在本说明书中，当使用程序这样的用语时，有时仅单独包含工艺制程、有时仅单独包含控制程序，或者有时包含这两者。另外，RAM280b以暂时地保持由CPU280a读取到的程序、数据等的存储区域(工作区)的形式构成。
I/O端口280d连接于闸阀205、升降机构218、加热器213等、衬底处理装置200的各构成。
CPU280a构成为读取并执行来自存储装置280c的控制程序、并且根据来自输入输出装置281的操作指令的输入等而从存储装置280c读取工艺制程。而且，CPU280a构成为能够按照所读取的工艺制程的内容，来控制闸阀205的开闭动作、升降机构218的升降动作、各泵的开闭控制、质量流量控制器的流量调节动作、阀等。作为工艺制程，记录与各衬底对应的制程。这些制程构成为若从上位装置等接收到对各个衬底进行处理的指示，则被读取。
需要说明的是，对于控制器280而言，通过使用存储有上述程序的外部存储装置(例如，硬盘等磁盘，DVD等光盘，MO等光磁盘，USB存储器等半导体存储器)282，将程序安装于计算机；等，能够构成本实施方式涉及的控制器280。需要说明的是，用于向计算机供给程序的手段不限于经由外部存储装置282而供给的情况。例如，也可以使用网络、专用线路等通信手段，不经由外部存储装置282从而供给程序。需要说明的是，存储装置280c、外部存储装置282以计算机可读取的记录介质的形式构成。以下，也将它们统一简称为记录介质。需要说明的是，本说明书中使用记录介质这一用于时，有时仅单独包含存储装置280c，有时仅单独包含外部存储装置282，或有时包含上述两者。
＜衬底处理方法＞
接下来，使用图6，对在被搬入到衬底处理装置的衬底100的绝缘膜102上，形成耐蚀刻膜103的方法进行说明。需要说明的是，被搬入的衬底100为图1的状态。
以下，对作为第一处理气体使用作为含碳气体的丙烯气体来形成耐蚀刻膜103的例子进行说明。
(衬底搬入载置工序S102)
在衬底处理装置200中，使衬底载置台212下降至衬底100的搬送位置(搬送POSITION)。接下来，打开闸阀205使搬送空间203与移载室(未图示)连通。然后，使用晶片移载机(未图示)将衬底100从该移载室搬入搬送空间203，并将衬底100移载至衬底载置台212上。
向腔室202内搬入衬底100后，使晶片移载机退避至腔室202之外，关闭闸阀205从而将腔室202内密闭。之后，使衬底载置台212上升，使衬底100上升至上述处理空间201内的处理位置(衬底处理POSITION)。
当衬底100被搬入搬送空间203后，当上升至处理空间201内的处理位置时，将阀266关闭。由此，将搬送空间203与TMP265之间隔断，利用TMP265进行的搬送空间203的排气结束。另一方面，打开阀275，使处理空间201与APC276之间连通。APC276通过调节排气管262的流导，从而控制由DP267引起的处理空间201的排气流量，将处理空间201维持为规定的压力(例如10-5～10-1Pa的高真空)。
另外，当将衬底100载置于衬底载置台212之上时，向被埋入衬底载置台212的内部的加热器213供给电力，以衬底100的表面成为规定温度的方式控制。衬底100的温度为例如室温以上且800℃以下，优选为室温以上且700℃以下。此时，加热器213的温度这样调节：控制器280基于由温度传感器检测到的温度信息而提取控制值，通过温度控制部220而控制向加热器213的通电情况。
(含碳气体供给工序S104)
接下来，进行含碳气体供给工序S104。在含碳气体供给工序S104中，从第一气体供给系统向腔室202供给作为含碳气体的丙烯。由于丙烯经等离子体生成部243e而供给，因此向衬底100供给等离子体状态的丙烯。
通过使丙烯处于等离子体状态，能够分离为氢成分和碳成分。其中的碳成分被供给到氮化硅层表层、并与表层中的氮及硅结合，如图2所记载的，形成由含碳氮的硅层构成的耐蚀刻膜103。
耐蚀刻膜103由于含有碳，因此可提高耐蚀刻性。因而，较之不存在碳成分、或比耐蚀刻膜的碳成分的含有率少的氮化硅膜102而言，耐蚀刻膜103的耐蚀刻性变高。
在含碳气体供给工序S104中，使处理空间201的压力成为100Pa～1000Pa、使衬底100的温度成为150℃～400℃，并且使含碳气体的流量成为1000sccm～3000sccm。经规定时间、并形成所期望的膜厚的含碳氮的硅层后，停止供给丙烯。
对于绝缘膜102的膜厚而言，优选的是，以至少确保3nm至4nm的方式，调节耐蚀刻膜103的厚度。该膜厚为从量子力学考虑，漏电流不会泄露的厚度。另外，耐蚀刻膜103构成为比绝缘膜102薄。由于通过减薄、能够确保绝缘膜102间的宽度104，因此，即便邻接的电极间的距离变短，也能够确保绝缘性。
(衬底搬出工序S106)
含碳气体供给工序S104结束后，实施衬底搬出工序S106。在衬底搬出工序S106中，进行与衬底搬入载置工序S102相反的步骤，从而将衬底100搬出。
如上所述，通过在绝缘膜102的外周形成耐蚀刻膜103，从而能够形成漏电流被抑制、并且具有耐蚀刻性的膜。
(第二实施方式)
接下来，使用图7、图8，说明第二实施方式。图7表示第二实施方式中的气体供给部，图8表示第二实施方式中的衬底处理流程。区别于第一实施方式的方面在于，具有第二气体供给系统和第三气体供给系统的方面，具有含氮气体供给工序的方面。
接下来，对具体内容进行说明。需要说明的是，对于与第一实施方式同样的构成，省略说明。
(第二气体供给系统)
第二气体供给系统称为第二气体供给部。在第二气体供给管244a上，从上游方向起依次设有第二气体供给源244b、质量流量控制器(MFC)244c、及阀244d。
含有第二元素的气体(以下，“含第二元素的气体”)从第二气体供给管244a经由质量流量控制器244c、阀244d、共用气体供给管242而被供给到簇射头230内。
含第二元素的气体为处理气体之一。含第二元素的气体具有除去在含碳气体供给工序S104中形成的耐蚀刻膜103中所含的杂质的性质。含第二元素的气体含有不同于第一元素的第二元素。第二元素为含氮气体，例如是氨(NH3)。
第二气体供给系统244主要由第二气体供给管244a、质量流量控制器244c、阀244d构成。
另外，在第二气体供给管244a的比阀244d更靠下游侧连接有第二非活性气体供给管247a的下游端。在第二非活性气体供给管247a上，从上游方向起依次设有非活性气体供给源247b、质量流量控制器(MFC)247c、及阀247d。
非活性气体从第二非活性气体供给管247a经由质量流量控制器247c、阀247d、第二气体供给管247a而被供给到簇射头230内。在第二防扩散膜形成工序(S104)中，非活性气体作为载气或稀释气体而发挥作用。
第二非活性气体供给系统主要由第二非活性气体供给管247a、质量流量控制器247c及阀247d构成。需要说明的是，也可以认为非活性气体供给源247b包含在第二非活性气体供给系统中。
此外，也可以认为第二气体供给源247b、第二非活性气体供给系统包含在第二气体供给系统244中。
(第三气体供给系统)
第三气体供给系统称为第三气体供给部。在第三气体供给管245a上，从上游方向起依次设有第三气体供给源245b、作为流量控制器(流量控制部)的质量流量控制器(MFC)245c，及作为开关阀的阀245d。
作为吹扫气体的非活性气体从第三气体供给管245a经由质量流量控制器245c、阀245d、共用气体供给管242而被供给到簇射头230。
在衬底处理工序中，从非活性气体供给源245b供给的非活性气体作为对残留在腔室202、簇射头230内的气体进行吹扫的吹扫气体而发挥作用。
第三气体供给系统主要由第三气体供给管245a、质量流量控制器245c及阀245d构成。需要说明的是，也可以认为第三气体供给源245b包含在第三气体供给系统中。
(含氮气体供给工序S105)
接下来，说明含氮气体供给工序S105。含氮气体供给工序S105在第一实施方式中的含碳气体供给工序S104之后进行。
在含碳气体供给工序S104之后，从第三气体供给系统245向处理空间201供给非活性气体，将处理空间201中的含碳气体气氛排出。
将含碳气体气氛排出后，从第二气体供给系统244向处理空间201供给氨气。对于氨气，通过例如远程等离子体部244e使之处于等离子体状态，从而以被分解为氢成分和氮成分的状态被供给到处理空间201。
这里，对在含碳气体供给工序S104之后实施含氮气体供给工序S105的理由进行说明。当构成处理空间201的壁、衬底载置台等部件为石英制时，石英被等离子体轰击，从而有时会析出氧成分。另外，有时会在更换衬底时的吹扫气体中含有氧成分。该情况下，作为含碳膜的耐蚀刻膜103的表面与氧成分反应，在耐蚀刻膜103表面形成含有氧成分的含碳氮的硅层。氧成分对于耐蚀刻膜103而言是杂质，据认为，含有氧成分的含碳氮的硅层降低耐蚀刻性能。
因此，在本实施方式中，供给含氮气体并使之与含有氧成分的含碳硅层反应，从而将氮成分与氧成分置换。具体而言，使氧成分与氮成分反应从而形成NO气体，并且使氮结合于氧的键被切断的位置。通过进行这样的操作，与含有氧时相比，提高了含碳层表面的氮浓度，可提高耐蚀刻性能。
(第三实施方式)
接下来，说明第三实施方式。第三实施方式在以下方面不同：在图3中记载的衬底处理装置200的构造中，追加能够主要在处理空间201内直接生成等离子体的构造。具体而言，如图9所记载的衬底处理装置200’中所记载的那样，追加了等离子体生成部250、和连接于衬底载置台212的地线(earth)等构成。
等离子体生成部250主要具有电源251和匹配器252。电源251的不同于匹配器的一侧连接于地线。电源251经由匹配器252而与分散板234电连接。分散板234构成为与上部容器202a隔着绝缘物253而邻接、与盖231隔着绝缘物254而邻接。即，分散板234相对于盖231和上部容器202a是电绝缘的。
当在处理空间201中生成等离子体时，从电源251供给电力，是被供给到处理空间201中的气体成为等离子体状态。
成为等离子体状态的气体为通过例如含碳气体供给工序S104而被供给的含碳气体。通过在衬底100上生成能量高的等离子体，能够使得碳成分成为密的状态而在绝缘膜102上形成耐蚀刻膜103。
另外，如通常已知的那样，丙烯等含碳气体具有易于附着于石英的性质。因此，若等离子体生成部与衬底之间的距离远，则丙烯等气体附着于中途的石英部件，因此，存在到达衬底100的到达效率变差的问题。即，含碳气体的使用效率变差。
与此相对，如本实施方式这样，通过在衬底100的附近生成等离子体，能够确实地使丙烯到达衬底100，能够提高含碳气体的使用效率。
需要说明的是，在上述实施方式中，作为含氯气体，使用丙烯气体进行了说明，但不限于此，也可使用乙炔(C2H2)气体、乙烯(C2H4)气体等。
(主要效果)
伴随以上实施方式的主要效果记于以下。
(a)由于能够在电极周围的氮化硅膜表面形成含有碳的氮化硅膜，因此，能够同时实现漏电流抑制和耐蚀刻性能的提高。
(b)由于在形成含有碳的氮化硅膜后，进行氮化处理，因此，能够进一步提高氮密度、提高耐蚀刻性。

Claims (21)

1.半导体器件的制造方法，具有下述工序：
将下述衬底搬入在腔室内构成的处理空间的工序，所述衬底具有栅电极、和在所述栅电极的侧面作为侧壁的一部分而构成的绝缘膜；和
向所述处理空间供给含碳气体，在所述绝缘膜的表面上形成包含碳氮成分的耐蚀刻膜的工序。
2.根据权利要求1所述的半导体器件的制造方法，其中，所述耐蚀刻膜的碳含有率构成为高于所述绝缘膜的碳含有率。
3.根据权利要求2所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序中，
使所述含碳气体成为等离子体状态，向所述绝缘膜表面供给所述含碳气体的碳成分。
4.根据权利要求3所述的半导体器件的制造方法，其中，当使所述含碳气体成为等离子体状态时，在所述处理空间中形成等离子体状态。
5.根据权利要求3所述的半导体器件的制造方法，其中，在形成耐蚀刻膜的工序中，所述耐蚀刻膜以比所述绝缘膜薄的方式形成。
6.根据权利要求3所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序之后，进一步具有供给含氮气体的含氮气体供给工序。
7.根据权利要求2所述的半导体器件的制造方法，其中，在形成耐蚀刻膜的工序中，所述耐蚀刻膜以比所述绝缘膜薄的方式形成。
8.根据权利要求7所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序之后，进一步具有供给含氮气体的含氮气体供给工序。
9.根据权利要求2所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序之后，进一步具有供给含氮气体的含氮气体供给工序。
10.根据权利要求1所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序中，
使所述含碳气体成为等离子体状态，向所述绝缘膜表面供给所述含碳气体的碳成分。
11.根据权利要求10所述的半导体器件的制造方法，其中，当使所述含碳气体成为等离子体状态时，在所述处理空间中形成等离子体状态。
12.根据权利要求11所述的半导体器件的制造方法，其中，在形成耐蚀刻膜的工序中，所述耐蚀刻膜以比所述绝缘膜薄的方式形成。
13.根据权利要求11所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序之后，进一步具有供给含氮气体的含氮气体供给工序。
14.根据权利要求10所述的半导体器件的制造方法，其中，在形成耐蚀刻膜的工序中，所述耐蚀刻膜以比所述绝缘膜薄的方式形成。
15.根据权利要求14所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序之后，进一步具有供给含氮气体的含氮气体供给工序。
16.根据权利要求10所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序之后，进一步具有供给含氮气体的含氮气体供给工序。
17.根据权利要求1所述的半导体器件的制造方法，其中，在形成耐蚀刻膜的工序中，所述耐蚀刻膜以比所述绝缘膜薄的方式形成。
18.根据权利要求17所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序之后，进一步具有供给含氮气体的含氮气体供给工序。
19.根据权利要求1所述的半导体器件的制造方法，其中，在形成所述耐蚀刻膜的工序之后，进一步具有供给含氮气体的含氮气体供给工序。
20.衬底处理装置，其具有：
载置衬底的衬底载置台，所述衬底具有栅电极、和在所述栅电极的侧面作为侧壁的一部分而构成的绝缘膜；
内置所述衬底载置台的腔室；
气体供给部，其与所述腔室连通，并且以在所述含氮硅层的表面形成耐蚀刻膜的方式，向在所述腔室内构成的处理空间中至少供给含碳气体。
21.存储介质，其存储有通过计算机而使衬底处理装置执行下述处理的程序，所述处理为：
将下述衬底搬入在腔室内构成的处理空间的处理，所述衬底具有栅电极、和在所述栅电极的侧面作为侧壁的一部分而构成的绝缘膜；和
向所述处理空间供给含碳气体，在所述绝缘膜的表面上形成耐蚀刻膜的处理。
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