KR950034874A - 금속-절연체-반도체 게이트 구조를 갖는 불휘발성 반도체 기억 장치 - Google Patents

금속-절연체-반도체 게이트 구조를 갖는 불휘발성 반도체 기억 장치 Download PDF

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KR950034874A
KR950034874A KR1019950013797A KR19950013797A KR950034874A KR 950034874 A KR950034874 A KR 950034874A KR 1019950013797 A KR1019950013797 A KR 1019950013797A KR 19950013797 A KR19950013797 A KR 19950013797A KR 950034874 A KR950034874 A KR 950034874A
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insulating film
film
semiconductor memory
memory device
aggregates
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KR100190158B1 (ko
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노부히로 엔도
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가네꼬 하사시
닛본덴기 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 반도체의 불휘발성 기억 소자에 있어서, 그 기입 소거 동작의 저전압화와 저소비 전력화, 이 동작의 회수의 증가를 실현하고, 플래쉬 메모리와 같은 불휘발성 반도체 기억 장치의 성능 향상을 도모하는 것을 목적으로 한다.
MIS형 반도체 불휘발성 기억 소자에 있어서, 제1절연막과 제2절연막의 2층의 절연막으로 형성된 게이트 절연막 중, 상기 제2절연막을 고유전율막으로 형성함과 동시에, 이 고유전율막의 조성을 연속적 또는 불연속적으로 바꾸거나 또는 상기 제1절연막과 제2절연막 사이에 실리콘 미립자를 형성한다.

Description

금속-절연체-반도체 게이트 구조를 갖는 불휘발성 반도체 기억 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예를 설명하기 위한 개략 단면도, 제2도는 본 발명의 MIS 구조의 등가 회로도.

Claims (7)

  1. MIS(금속-절연체-반도체) 구조의 트랜지스터에서, 반도체 기판의 주면에 제1절연막이 형성되고, 상기 제1절연막에 적층하여 제2절연막이 형성되며, 상기 제1절연막과 제2절연막의 2층 절연막에서 MIS구조 트랜지스터의 게이트 절연막이 형성되고, 상기 제1절연막의 막 두께 및 비유전율을 t1, ε1로하고, 상기 제2절연막의 막 두께 및 비유절율을 t2, ε2로 하여, ε2/ε1이 20≤ε2/ε1의 관계와 t2/t1≤ε2/ε1의 관계를 만족하는 것을 특징으로 하는 반도체 기억 장치.
  2. 제1항에 있어서, 상기 제1절연막이 실리콘 산화물, 실리콘 질화물 또는 실리콘 산화막의 질화물로 형성되고, 상기 제2절연막이 티탄산 스트롬튬, 티탄산 발륨 스트론튬, 티탄산 지르콘산납, 티탄산 비스무스 또는 탄탈산 비스무스 스트론튬의 금속 산화물로 형성되는 것을 특징으로 한 반도체 기억 장치.
  3. 제1항에 있어서, 상기 제2절연막이 2종류의 금속 산화물 고용체(固溶體)의 절연 물질로 형성되고, 상기 고용체의 절연 물질의 조성이 그 막 두께 방향에서 상이하도록 형성되어 있는 것을 특징으로 하는 반도체 기억 장치.
  4. 제3항에 있어서, 상기 2종류의 금속 산화물이 티탄산 스트롬튬 및 티탄산 발륨이고, 상기 고용체의 절연물질이 티탄산 발륨 스트론튬인 것을 특징으로 하는 반도체 기억 장치.
  5. 제1항에 있어서, 상기 제2절연막이 적층되는 2종류의 산화막으로 형성되어 있는 것을 특징으로 하는 반도체 기억 장치.
  6. 제1, 2, 3, 4또는 5항에 있어서, 상기 제1절연막과 상기 제2절연막의 계면 영역에 실리콘 원자의 집합체를 상기 집합체가 서로 이산되어 형성되는 것을 특징으로 하는 반도체 기억 장치.
  7. 실리콘 반도체 기판의 주면에 실리콘 산화막을 형성하는 공정, 상기 실리콘 산화막의 표면에 실리콘 원자의 복수의 집합체를 이들 집합체가 서로 이산하도록 형성하는 공정 및 상기 실리콘 산화막 및 상기 집합체를 피복하도록 상기 제2절연막을 형성하는 공정을 포함하는 것을 특징으로 하는 제6항 기재의 반도체 기억 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950013797A 1994-05-30 1995-05-30 금속-절연체-반도체 게이트 구조를 갖는 불휘발성 반도체 기억 장치 KR100190158B1 (ko)

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JP94-116394 1994-05-30
JP6116394A JP2643833B2 (ja) 1994-05-30 1994-05-30 半導体記憶装置及びその製造方法

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Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289030A (en) 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
KR100214267B1 (ko) * 1995-04-07 1999-08-02 김영환 반도체 소자 제조방법
JP3094868B2 (ja) * 1995-09-07 2000-10-03 三菱マテリアル株式会社 高純度誘電体薄膜の作製方法
US5766697A (en) * 1995-12-08 1998-06-16 The United States Of America As Represented By The Secretary Of The Army Method of making ferrolectric thin film composites
JP3612839B2 (ja) * 1996-02-13 2005-01-19 三菱電機株式会社 高誘電率薄膜構造、高誘電率薄膜形成方法および高誘電率薄膜形成装置
EP0833393B1 (en) * 1996-09-30 2011-12-14 STMicroelectronics Srl Floating gate non-volatile memory cell with low erasing voltage and manufacturing method
US5789312A (en) * 1996-10-30 1998-08-04 International Business Machines Corporation Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics
JP5731121B2 (ja) * 1996-12-23 2015-06-10 エルエスアイ コーポレーション 集積回路
US6258675B1 (en) * 1997-12-18 2001-07-10 Advanced Micro Devices, Inc. High K gate electrode
US6153477A (en) * 1998-04-14 2000-11-28 Advanced Micro Devices, Inc. Ultra short transistor channel length formed using a gate dielectric having a relatively high dielectric constant
US6002150A (en) * 1998-06-17 1999-12-14 Advanced Micro Devices, Inc. Compound material T gate structure for devices with gate dielectrics having a high dielectric constant
US20010013629A1 (en) * 1998-06-30 2001-08-16 Gang Bai Multi-layer gate dielectric
US6727148B1 (en) 1998-06-30 2004-04-27 Lam Research Corporation ULSI MOS with high dielectric constant gate insulator
JP2000200842A (ja) 1998-11-04 2000-07-18 Sony Corp 不揮発性半導体記憶装置、製造方法および書き込み方法
US6911707B2 (en) * 1998-12-09 2005-06-28 Advanced Micro Devices, Inc. Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance
DE19857038A1 (de) 1998-12-10 2000-06-29 Siemens Ag FEMFET-Vorrichtung und Verfahren zu deren Herstellung
US6943392B2 (en) * 1999-08-30 2005-09-13 Micron Technology, Inc. Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen
US6444478B1 (en) 1999-08-31 2002-09-03 Micron Technology, Inc. Dielectric films and methods of forming same
US6335049B1 (en) 2000-01-03 2002-01-01 Micron Technology, Inc. Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6384448B1 (en) 2000-02-28 2002-05-07 Micron Technology, Inc. P-channel dynamic flash memory cells with ultrathin tunnel oxides
US6249460B1 (en) * 2000-02-28 2001-06-19 Micron Technology, Inc. Dynamic flash memory cells with ultrathin tunnel oxides
EP1139409A3 (en) * 2000-02-29 2003-01-02 Agere Systems Guardian Corporation Selective laser anneal on semiconductor material
US6558517B2 (en) * 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
JP2004503920A (ja) * 2000-05-31 2004-02-05 モトローラ・インコーポレイテッド 半導体デバイスおよび該半導体デバイスを製造する方法
FR2810791A1 (fr) * 2000-06-21 2001-12-28 Commissariat Energie Atomique Oxyde tunnel pourvu de nodules de silicium, son procede de preparation, et dispositifs electroniques comprenant cet oxyde
AU2001264987A1 (en) * 2000-06-30 2002-01-14 Motorola, Inc., A Corporation Of The State Of Delware Hybrid semiconductor structure and device
AU2001277001A1 (en) * 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
EP1326271A4 (en) * 2000-09-18 2005-08-24 Tokyo Electron Ltd METHOD FOR FILMING A GATE INSULATOR, DEVICE FOR FILMING A GATE INSULATOR AND A CLUSTER TOOL
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
EP1338029A1 (en) * 2000-11-14 2003-08-27 Motorola, Inc. Semiconductor structure having high dielectric constant material
US20020096683A1 (en) * 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6566147B2 (en) * 2001-02-02 2003-05-20 Micron Technology, Inc. Method for controlling deposition of dielectric films
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US20060180851A1 (en) 2001-06-28 2006-08-17 Samsung Electronics Co., Ltd. Non-volatile memory devices and methods of operating the same
US8253183B2 (en) 2001-06-28 2012-08-28 Samsung Electronics Co., Ltd. Charge trapping nonvolatile memory devices with a high-K blocking insulation layer
KR100456580B1 (ko) * 2001-06-28 2004-11-09 삼성전자주식회사 비휘발성 반도체 메모리 장치의 부유 트랩형 메모리 소자
KR100390917B1 (ko) 2001-06-29 2003-07-12 주식회사 하이닉스반도체 플레시 메모리소자의 제조방법
US20030017266A1 (en) * 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US6838122B2 (en) * 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030010992A1 (en) * 2001-07-16 2003-01-16 Motorola, Inc. Semiconductor structure and method for implementing cross-point switch functionality
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) * 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
KR100395762B1 (ko) * 2001-07-31 2003-08-21 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030036217A1 (en) * 2001-08-16 2003-02-20 Motorola, Inc. Microcavity semiconductor laser coupled to a waveguide
US7011978B2 (en) * 2001-08-17 2006-03-14 Micron Technology, Inc. Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions
WO2003028112A1 (fr) * 2001-09-20 2003-04-03 Renesas Technology Corp. Dispositif de circuit integre a semi-conducteur et son procede de fabrication
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
JP2003309188A (ja) * 2002-04-15 2003-10-31 Nec Corp 半導体装置およびその製造方法
US6916717B2 (en) * 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US20040012037A1 (en) * 2002-07-18 2004-01-22 Motorola, Inc. Hetero-integration of semiconductor materials on silicon
US6791125B2 (en) * 2002-09-30 2004-09-14 Freescale Semiconductor, Inc. Semiconductor device structures which utilize metal sulfides
US20040069991A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Perovskite cuprate electronic device structure and process
US20040070312A1 (en) * 2002-10-10 2004-04-15 Motorola, Inc. Integrated circuit and process for fabricating the same
US7020374B2 (en) * 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US6965128B2 (en) * 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6852645B2 (en) * 2003-02-13 2005-02-08 Texas Instruments Incorporated High temperature interface layer growth for high-k gate dielectric
US20040164315A1 (en) * 2003-02-25 2004-08-26 Motorola, Inc. Structure and device including a tunneling piezoelectric switch and method of forming same
US20060035023A1 (en) * 2003-08-07 2006-02-16 Wontae Chang Method for making a strain-relieved tunable dielectric thin film
US7923785B2 (en) * 2003-08-18 2011-04-12 Globalfoundries Inc. Field effect transistor having increased carrier mobility
JP2005251990A (ja) 2004-03-04 2005-09-15 Nec Electronics Corp 不揮発性半導体記憶装置
US7652321B2 (en) * 2004-03-08 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US7579646B2 (en) * 2006-05-25 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Flash memory with deep quantum well and high-K dielectric
US8816422B2 (en) * 2006-09-15 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-trapping layer flash memory cell
US8294197B2 (en) * 2006-09-22 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Program/erase schemes for floating gate memory cells
JP4365850B2 (ja) * 2006-11-20 2009-11-18 株式会社東芝 不揮発性半導体記憶装置
CN101689532B (zh) 2007-06-29 2013-06-12 株式会社半导体能源研究所 半导体器件及其制造方法
KR20090093057A (ko) * 2008-02-28 2009-09-02 삼성에스디아이 주식회사 플라즈마 디스플레이 패녈
US8735963B2 (en) * 2008-07-07 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Flash memory cells having leakage-inhibition layers
JP4940264B2 (ja) * 2009-04-27 2012-05-30 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
US9601692B1 (en) 2010-07-13 2017-03-21 Crossbar, Inc. Hetero-switching layer in a RRAM device and method
US9570678B1 (en) 2010-06-08 2017-02-14 Crossbar, Inc. Resistive RAM with preferental filament formation region and methods
US8569172B1 (en) 2012-08-14 2013-10-29 Crossbar, Inc. Noble metal/non-noble metal electrode for RRAM applications
US8884261B2 (en) 2010-08-23 2014-11-11 Crossbar, Inc. Device switching using layered device structure
USRE46335E1 (en) 2010-11-04 2017-03-07 Crossbar, Inc. Switching device having a non-linear element
US8502185B2 (en) 2011-05-31 2013-08-06 Crossbar, Inc. Switching device having a non-linear element
US9620206B2 (en) 2011-05-31 2017-04-11 Crossbar, Inc. Memory array architecture with two-terminal memory cells
US8619459B1 (en) 2011-06-23 2013-12-31 Crossbar, Inc. High operating speed resistive random access memory
US8946669B1 (en) 2012-04-05 2015-02-03 Crossbar, Inc. Resistive memory device and fabrication methods
US9627443B2 (en) 2011-06-30 2017-04-18 Crossbar, Inc. Three-dimensional oblique two-terminal memory with enhanced electric field
US9166163B2 (en) * 2011-06-30 2015-10-20 Crossbar, Inc. Sub-oxide interface layer for two-terminal memory
US9564587B1 (en) 2011-06-30 2017-02-07 Crossbar, Inc. Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
US9685608B2 (en) 2012-04-13 2017-06-20 Crossbar, Inc. Reduced diffusion in metal electrode for two-terminal memory
US8658476B1 (en) 2012-04-20 2014-02-25 Crossbar, Inc. Low temperature P+ polycrystalline silicon material for non-volatile memory device
US9583701B1 (en) 2012-08-14 2017-02-28 Crossbar, Inc. Methods for fabricating resistive memory device switching material using ion implantation
US9741765B1 (en) 2012-08-14 2017-08-22 Crossbar, Inc. Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
US9576616B2 (en) 2012-10-10 2017-02-21 Crossbar, Inc. Non-volatile memory with overwrite capability and low write amplification
US10290801B2 (en) 2014-02-07 2019-05-14 Crossbar, Inc. Scalable silicon based resistive memory device
TWI767512B (zh) * 2020-01-22 2022-06-11 美商森恩萊斯記憶體公司 薄膜儲存電晶體中冷電子抹除

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047214A (en) * 1975-09-04 1977-09-06 Westinghouse Electric Corporation Electrostatically bonded dielectric-on-semiconductor device, and a method of making the same
JPS6233753A (ja) * 1985-08-05 1987-02-13 Tokyo Netsushiyori Kogyo Kk 雰囲気ガスの制御方法
JP3045417B2 (ja) * 1991-10-29 2000-05-29 ローム株式会社 半導体装置およびその製法
JP3250257B2 (ja) * 1992-06-09 2002-01-28 セイコーエプソン株式会社 半導体装置及びその製造方法
JPH0629549A (ja) * 1992-07-13 1994-02-04 Oki Electric Ind Co Ltd 電界効果トランジスタ
US5442585A (en) * 1992-09-11 1995-08-15 Kabushiki Kaisha Toshiba Device having dielectric thin film
US5523964A (en) * 1994-04-07 1996-06-04 Symetrix Corporation Ferroelectric non-volatile memory unit
US5478653A (en) * 1994-04-04 1995-12-26 Guenzer; Charles S. Bismuth titanate as a template layer for growth of crystallographically oriented silicon
US5426075A (en) * 1994-06-15 1995-06-20 Ramtron International Corporation Method of manufacturing ferroelectric bismuth layered oxides

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