KR950034841A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR950034841A
KR950034841A KR1019950001980A KR19950001980A KR950034841A KR 950034841 A KR950034841 A KR 950034841A KR 1019950001980 A KR1019950001980 A KR 1019950001980A KR 19950001980 A KR19950001980 A KR 19950001980A KR 950034841 A KR950034841 A KR 950034841A
Authority
KR
South Korea
Prior art keywords
gate electrode
polysilicon
forming
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019950001980A
Other languages
English (en)
Korean (ko)
Inventor
다카시 우메모토
히로시 다카하시
Original Assignee
이토 기요시
세이코덴시고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이토 기요시, 세이코덴시고교 가부시키가이샤 filed Critical 이토 기요시
Publication of KR950034841A publication Critical patent/KR950034841A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019950001980A 1994-02-02 1995-01-28 반도체 장치 및 그 제조방법 Withdrawn KR950034841A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-11240 1994-02-02
JP6011240A JPH07221291A (ja) 1994-02-02 1994-02-02 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
KR950034841A true KR950034841A (ko) 1995-12-28

Family

ID=11772420

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950001980A Withdrawn KR950034841A (ko) 1994-02-02 1995-01-28 반도체 장치 및 그 제조방법

Country Status (3)

Country Link
JP (1) JPH07221291A (enrdf_load_stackoverflow)
KR (1) KR950034841A (enrdf_load_stackoverflow)
TW (1) TW283262B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3854290B2 (ja) 2004-06-17 2006-12-06 株式会社東芝 半導体装置およびその製造方法
JP5280056B2 (ja) * 2008-01-10 2013-09-04 シャープ株式会社 Ｍｏｓ電界効果トランジスタ
JP5582030B2 (ja) * 2010-12-28 2014-09-03 富士通セミコンダクター株式会社 Ｍｏｓトランジスタおよびその製造方法
JP6318786B2 (ja) 2014-04-04 2018-05-09 セイコーエプソン株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
TW283262B (enrdf_load_stackoverflow) 1996-08-11
JPH07221291A (ja) 1995-08-18

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19950128

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid