KR950034841A - 반도체 장치 및 그 제조방법 - Google Patents
반도체 장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR950034841A KR950034841A KR1019950001980A KR19950001980A KR950034841A KR 950034841 A KR950034841 A KR 950034841A KR 1019950001980 A KR1019950001980 A KR 1019950001980A KR 19950001980 A KR19950001980 A KR 19950001980A KR 950034841 A KR950034841 A KR 950034841A
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- polysilicon
- forming
- semiconductor device
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0147—Manufacturing their gate sidewall spacers
-
- H10P14/416—
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6011240A JPH07221291A (ja) | 1994-02-02 | 1994-02-02 | 半導体装置及びその製造方法 |
| JP94-11240 | 1994-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR950034841A true KR950034841A (ko) | 1995-12-28 |
Family
ID=11772420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950001980A Withdrawn KR950034841A (ko) | 1994-02-02 | 1995-01-28 | 반도체 장치 및 그 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07221291A (cg-RX-API-DMAC10.html) |
| KR (1) | KR950034841A (cg-RX-API-DMAC10.html) |
| TW (1) | TW283262B (cg-RX-API-DMAC10.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3854290B2 (ja) | 2004-06-17 | 2006-12-06 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP5280056B2 (ja) * | 2008-01-10 | 2013-09-04 | シャープ株式会社 | Ｍｏｓ電界効果トランジスタ |
| JP5582030B2 (ja) * | 2010-12-28 | 2014-09-03 | 富士通セミコンダクター株式会社 | Ｍｏｓトランジスタおよびその製造方法 |
| JP6318786B2 (ja) | 2014-04-04 | 2018-05-09 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
-
1994
- 1994-02-02 JP JP6011240A patent/JPH07221291A/ja active Pending
-
1995
- 1995-01-28 KR KR1019950001980A patent/KR950034841A/ko not_active Withdrawn
- 1995-02-28 TW TW084101933A patent/TW283262B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW283262B (cg-RX-API-DMAC10.html) | 1996-08-11 |
| JPH07221291A (ja) | 1995-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| PC1203 | Withdrawal of no request for examination |
St.27 status event code: N-1-6-B10-B12-nap-PC1203 |
|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid | ||
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-3-3-R10-R18-oth-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |