KR950016458A - 고주파 마그네트론 플라즈마 장치 - Google Patents

고주파 마그네트론 플라즈마 장치 Download PDF

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KR950016458A
KR950016458A KR1019940028855A KR19940028855A KR950016458A KR 950016458 A KR950016458 A KR 950016458A KR 1019940028855 A KR1019940028855 A KR 1019940028855A KR 19940028855 A KR19940028855 A KR 19940028855A KR 950016458 A KR950016458 A KR 950016458A
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South Korea
Prior art keywords
high frequency
plasma
frequency magnetron
excitation electrode
magnetic shield
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KR1019940028855A
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English (en)
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KR0137323B1 (ko
Inventor
마코토 사사키
히로후미 후쿠이
마사미 아이하라
다다히로 오오미
Original Assignee
오오다 다다히호
가타오카 마사타카
알프스뎅키 가부시키가이샤
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Publication of KR950016458A publication Critical patent/KR950016458A/ko
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Publication of KR0137323B1 publication Critical patent/KR0137323B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Abstract

본 발명은 플라즈마 장치의 에너지 효율을 높힘과 동시에, 플라즈마를 정밀하게 제어하는 것이 가능한 고주파 마그네트론 플라즈마 장치를 제공하는 것을 목적으로 한다. 서셉터 전극과, 플라즈마 여기 전극과, 상기 플라즈마 여기전극에 부착된 자석과, 상기 플라즈마 여기전극의 주위에 배치된 자기시일드를 진공실 내에 가지는 고주파 마그네트론 플라즈마 장치에 있어서, 상기 자기시일드는 고주파에 대해 높은 임피이던스를 가지는 것을 특징으로 한다. 상기 자기시일드는 직류에 대해 접지되어 있는 것이 바람직하고, 임피이던수를 통해서 접지되어 있는 것은 더 바람직하다.

Description

고주파 마그네트론 플라즈마 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예 1의 고주파 마그네트론 플라즈마 장치를 나타내는 개념도.

Claims (3)

  1. 서셉터(109) 전극과, 플라즈마 여기전극(102)과, 상기 플라즈마 여기전극에 부착된 자석(104)와, 상기 플라즈마 여기전극의 주위에 배치된 자기시일드(105)를 진공실 내에 가지는 고주파 마그네트론 플라즈마 장치에 있어서, 상기 자기시일드는 고주파에 대해서 고임피이던스를 가지는 것을 특징으로 하는 고주파 마그네트론 플라즈마 장치.
  2. 제1항에 있어서, 상기 자기시일드는 직류에 대해서 접지되어 있는 것을 특징으로 하는 고주파 마그네트론 플라즈마 장치.
  3. 제2항에 있어서, 상기 자기시일드는 임피이던수를 통해서 접지되어 있는 것을 특징으로 하는 고주파 마그네트론 플라즈마 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940028855A 1993-11-11 1994-11-04 고주파 마그네트론 플라즈마 장치 KR0137323B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5282723A JP2592217B2 (ja) 1993-11-11 1993-11-11 高周波マグネトロンプラズマ装置
JP93-282723 1993-11-11

Publications (2)

Publication Number Publication Date
KR950016458A true KR950016458A (ko) 1995-06-17
KR0137323B1 KR0137323B1 (ko) 1998-06-01

Family

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Family Applications (1)

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KR1019940028855A KR0137323B1 (ko) 1993-11-11 1994-11-04 고주파 마그네트론 플라즈마 장치

Country Status (3)

Country Link
US (1) US5605576A (ko)
JP (1) JP2592217B2 (ko)
KR (1) KR0137323B1 (ko)

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US6055929A (en) * 1997-09-24 2000-05-02 The Dow Chemical Company Magnetron
US6125789A (en) * 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
JP4489868B2 (ja) * 1999-06-03 2010-06-23 株式会社アルバック カソード電極装置及びスパッタリング装置
JP4051209B2 (ja) 2001-02-02 2008-02-20 キヤノンアネルバ株式会社 高周波プラズマ処理装置及び高周波プラズマ処理方法
US6677711B2 (en) * 2001-06-07 2004-01-13 Lam Research Corporation Plasma processor method and apparatus
US6899787B2 (en) * 2001-06-29 2005-05-31 Alps Electric Co., Ltd. Plasma processing apparatus and plasma processing system with reduced feeding loss, and method for stabilizing the apparatus and system
TW200300649A (en) * 2001-11-27 2003-06-01 Alps Electric Co Ltd Plasma processing apparatus, its driving method, matching circuit design system, and plasma processing method
TW200300650A (en) * 2001-11-27 2003-06-01 Alps Electric Co Ltd Plasma processing apparatus
TWI239794B (en) * 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
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US7767056B2 (en) * 2003-01-14 2010-08-03 Canon Anelva Corporation High-frequency plasma processing apparatus
JP4614220B2 (ja) * 2004-11-10 2011-01-19 パナソニック株式会社 スパッタリング装置およびスパッタリング方法
KR100653073B1 (ko) * 2005-09-28 2006-12-01 삼성전자주식회사 기판처리장치와 기판처리방법
CN101970713B (zh) * 2008-03-04 2012-08-29 国立大学法人东北大学 旋转磁铁溅射装置
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KR102146501B1 (ko) 2013-03-15 2020-08-20 어플라이드 머티어리얼스, 인코포레이티드 프로세싱 챔버에서 튜닝 전극을 사용하여 플라즈마 프로파일을 튜닝하기 위한 장치 및 방법
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Also Published As

Publication number Publication date
JPH07147200A (ja) 1995-06-06
JP2592217B2 (ja) 1997-03-19
KR0137323B1 (ko) 1998-06-01
US5605576A (en) 1997-02-25

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