SE0102134L - Förfarande och anordning för att alstra plasma - Google Patents
Förfarande och anordning för att alstra plasmaInfo
- Publication number
- SE0102134L SE0102134L SE0102134A SE0102134A SE0102134L SE 0102134 L SE0102134 L SE 0102134L SE 0102134 A SE0102134 A SE 0102134A SE 0102134 A SE0102134 A SE 0102134A SE 0102134 L SE0102134 L SE 0102134L
- Authority
- SE
- Sweden
- Prior art keywords
- produced
- discharges
- cathode
- metal
- gas
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0102134A SE525231C2 (sv) | 2001-06-14 | 2001-06-14 | Förfarande och anordning för att alstra plasma |
JP2003505388A JP4461253B2 (ja) | 2001-06-14 | 2002-06-14 | プラズマ発生方法 |
PCT/SE2002/001160 WO2002103078A1 (en) | 2001-06-14 | 2002-06-14 | Method and apparatus for plasma generation |
EP02741573.6A EP1404889B1 (en) | 2001-06-14 | 2002-06-14 | Method and apparatus for plasma generation |
EP11190828.1A EP2434525B9 (en) | 2001-06-14 | 2002-06-14 | Method and apparatus for plasma generation |
US10/480,826 US8685213B2 (en) | 2001-06-14 | 2002-06-14 | Method and apparatus for plasma generation |
US14/190,000 US20140291140A1 (en) | 2001-06-14 | 2014-02-25 | Method and apparatus for plasma generation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0102134A SE525231C2 (sv) | 2001-06-14 | 2001-06-14 | Förfarande och anordning för att alstra plasma |
Publications (3)
Publication Number | Publication Date |
---|---|
SE0102134D0 SE0102134D0 (sv) | 2001-06-14 |
SE0102134L true SE0102134L (sv) | 2003-02-14 |
SE525231C2 SE525231C2 (sv) | 2005-01-11 |
Family
ID=20284499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0102134A SE525231C2 (sv) | 2001-06-14 | 2001-06-14 | Förfarande och anordning för att alstra plasma |
Country Status (5)
Country | Link |
---|---|
US (2) | US8685213B2 (sv) |
EP (2) | EP1404889B1 (sv) |
JP (1) | JP4461253B2 (sv) |
SE (1) | SE525231C2 (sv) |
WO (1) | WO2002103078A1 (sv) |
Families Citing this family (77)
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SE525231C2 (sv) * | 2001-06-14 | 2005-01-11 | Chemfilt R & D Ab | Förfarande och anordning för att alstra plasma |
US7327089B2 (en) * | 2002-09-19 | 2008-02-05 | Applied Process Technologies, Inc. | Beam plasma source |
US7411352B2 (en) * | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
US6896775B2 (en) * | 2002-10-29 | 2005-05-24 | Zond, Inc. | High-power pulsed magnetically enhanced plasma processing |
US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
US7138343B2 (en) | 2002-11-29 | 2006-11-21 | Oc Oerlikon Balzers Ag | Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber |
US20040112735A1 (en) * | 2002-12-17 | 2004-06-17 | Applied Materials, Inc. | Pulsed magnetron for sputter deposition |
GB2401116A (en) * | 2003-04-28 | 2004-11-03 | Hauzer Techno Coating Bv | Plasma Assisted Chemical Vapour Deposition |
US9771648B2 (en) | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US7663319B2 (en) * | 2004-02-22 | 2010-02-16 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US7095179B2 (en) | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US9123508B2 (en) | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
US20060066248A1 (en) * | 2004-09-24 | 2006-03-30 | Zond, Inc. | Apparatus for generating high current electrical discharges |
EP1580298A1 (fr) * | 2004-03-22 | 2005-09-28 | Materia Nova A.S.B.L | Dépôt par pulverisation cathodique magnétron en régime impulsionnel avec préionisation |
US7750575B2 (en) | 2004-04-07 | 2010-07-06 | Zond, Inc. | High density plasma source |
EP1609882A1 (de) * | 2004-06-24 | 2005-12-28 | METAPLAS IONON Oberflächenveredelungstechnik GmbH | Kathodenzerstäubungsvorrichtung und -verfahren |
US20110176648A1 (en) * | 2004-10-08 | 2011-07-21 | Rowland Mark S | Portable low energy neutron source for high sensitivity material characterization |
US20060140326A1 (en) * | 2004-10-08 | 2006-06-29 | The Regents Of The University Of Ca | Portable low energy neutron source for high sensitivity material characterization |
SE0402644D0 (sv) * | 2004-11-02 | 2004-11-02 | Biocell Ab | Method and apparatus for producing electric discharges |
US9997338B2 (en) * | 2005-03-24 | 2018-06-12 | Oerlikon Surface Solutions Ag, Pfäffikon | Method for operating a pulsed arc source |
US7305311B2 (en) * | 2005-04-22 | 2007-12-04 | Advanced Energy Industries, Inc. | Arc detection and handling in radio frequency power applications |
US7507977B2 (en) * | 2006-03-14 | 2009-03-24 | Axcelis Technologies, Inc. | System and method of ion beam control in response to a beam glitch |
US20080121515A1 (en) * | 2006-11-27 | 2008-05-29 | Seagate Technology Llc | Magnetron sputtering utilizing halbach magnet arrays |
US9355824B2 (en) * | 2006-12-12 | 2016-05-31 | Evatec Ag | Arc suppression and pulsing in high power impulse magnetron sputtering (HIPIMS) |
US8217299B2 (en) | 2007-02-22 | 2012-07-10 | Advanced Energy Industries, Inc. | Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch |
CN101796213B (zh) * | 2007-08-30 | 2012-07-11 | 皇家飞利浦电子股份有限公司 | 溅射系统 |
DE102007044071A1 (de) * | 2007-09-14 | 2009-04-02 | Thales Electron Devices Gmbh | Antriebsanordnung in einem Raumflugkörper |
WO2009079358A1 (en) * | 2007-12-14 | 2009-06-25 | The Regents Of The University Of California | Very low pressure high power impulse triggered magnetron sputtering |
CN102027564B (zh) | 2008-04-28 | 2013-05-22 | 塞梅孔公司 | 对物体进行预处理和涂覆的装置和方法 |
EP2157205B1 (en) * | 2008-07-29 | 2011-11-30 | Sulzer Metaplas GmbH | A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source |
US8044594B2 (en) | 2008-07-31 | 2011-10-25 | Advanced Energy Industries, Inc. | Power supply ignition system and method |
DE102008050499B4 (de) | 2008-10-07 | 2014-02-06 | Systec System- Und Anlagentechnik Gmbh & Co. Kg | PVD-Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens und nach dem Verfahren beschichtete Substrate |
US8395078B2 (en) * | 2008-12-05 | 2013-03-12 | Advanced Energy Industries, Inc | Arc recovery with over-voltage protection for plasma-chamber power supplies |
EP2648209B1 (en) | 2009-02-17 | 2018-01-03 | Solvix GmbH | A power supply device for plasma processing |
US8552665B2 (en) | 2010-08-20 | 2013-10-08 | Advanced Energy Industries, Inc. | Proactive arc management of a plasma load |
CN102409303A (zh) * | 2010-09-25 | 2012-04-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种靶材功率加载方法、靶材电源及半导体处理设备 |
CN102108492A (zh) * | 2011-01-18 | 2011-06-29 | 中国科学院力学研究所 | 一种基于高功率脉冲磁控溅射的离化率可控镀膜设备 |
EP2541584B1 (en) * | 2011-06-27 | 2018-08-08 | TRUMPF Huettinger Sp. Z o. o. | Generating a highly ionized plasma in a plasma chamber |
US9761424B1 (en) | 2011-09-07 | 2017-09-12 | Nano-Product Engineering, LLC | Filtered cathodic arc method, apparatus and applications thereof |
US9287098B2 (en) | 2012-11-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Charge removal from electrodes in unipolar sputtering system |
US9129776B2 (en) | 2012-11-01 | 2015-09-08 | Advanced Energy Industries, Inc. | Differing boost voltages applied to two or more anodeless electrodes for plasma processing |
US9226380B2 (en) | 2012-11-01 | 2015-12-29 | Advanced Energy Industries, Inc. | Adjustable non-dissipative voltage boosting snubber network |
JP6403269B2 (ja) * | 2014-07-30 | 2018-10-10 | 株式会社神戸製鋼所 | アーク蒸発源 |
CN104451578A (zh) * | 2014-11-17 | 2015-03-25 | 中国科学院力学研究所 | 一种直流耦合型高能脉冲磁控溅射方法 |
US9812305B2 (en) | 2015-04-27 | 2017-11-07 | Advanced Energy Industries, Inc. | Rate enhanced pulsed DC sputtering system |
US11049702B2 (en) | 2015-04-27 | 2021-06-29 | Advanced Energy Industries, Inc. | Rate enhanced pulsed DC sputtering system |
US10373811B2 (en) | 2015-07-24 | 2019-08-06 | Aes Global Holdings, Pte. Ltd | Systems and methods for single magnetron sputtering |
SE540533C2 (en) * | 2016-02-12 | 2018-09-25 | Plasmatrix Mat Ab | Cutting tool assembly with controlled resilience using hyperelastic materials |
US20180108519A1 (en) * | 2016-10-17 | 2018-04-19 | Applied Materials, Inc. | POWER DELIVERY FOR HIGH POWER IMPULSE MAGNETRON SPUTTERING (HiPIMS) |
US10256067B1 (en) | 2018-01-02 | 2019-04-09 | General Electric Company | Low voltage drop, cross-field, gas switch and method of operation |
US10665402B2 (en) | 2018-02-08 | 2020-05-26 | General Electric Company | High voltage, cross-field, gas switch and method of operation |
US10403466B1 (en) | 2018-03-23 | 2019-09-03 | General Electric Company | Low sputtering, cross-field, gas switch and method of operation |
US10867776B2 (en) | 2018-05-09 | 2020-12-15 | Applied Materials, Inc. | Physical vapor deposition in-chamber electro-magnet |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
CN118315254A (zh) | 2019-01-22 | 2024-07-09 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
TWI686106B (zh) * | 2019-01-25 | 2020-02-21 | 國立清華大學 | 場發射手持式常壓電漿產生裝置 |
CN110004426A (zh) * | 2019-04-19 | 2019-07-12 | 东莞超汇链条有限公司 | 连续式镀膜系统的镀膜方法及其方法所得的镀膜 |
CN115461491B (zh) * | 2020-07-01 | 2024-08-23 | 应用材料公司 | 用于操作腔室的方法、用于处理基板的装置和基板处理系统 |
US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
CN112080728B (zh) * | 2020-08-12 | 2022-05-10 | 北京航空航天大学 | HiPIMS系统及减小HiPIMS放电电流延迟的方法 |
RU2754915C1 (ru) * | 2020-10-27 | 2021-09-08 | федеральное государственное автономное образовательное учреждение высшего образования "Пермский национальный исследовательский политехнический университет" | Способ плазменной обработки металлических изделий |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US11984306B2 (en) | 2021-06-09 | 2024-05-14 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
CN115704086A (zh) * | 2021-08-12 | 2023-02-17 | 中国科学院上海硅酸盐研究所 | 一种离子同极溅射镀膜装置及方法 |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
CN114351104B (zh) * | 2022-03-21 | 2022-06-07 | 山西金山磁材有限公司 | 一种磁控溅射平面靶磁通装置 |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5562734A (en) * | 1978-11-01 | 1980-05-12 | Toshiba Corp | Ion source and ion etching method |
US4495399A (en) * | 1981-03-26 | 1985-01-22 | Cann Gordon L | Micro-arc milling of metallic and non-metallic substrates |
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
US4963239A (en) * | 1988-01-29 | 1990-10-16 | Hitachi, Ltd. | Sputtering process and an apparatus for carrying out the same |
DE3821207A1 (de) * | 1988-06-23 | 1989-12-28 | Leybold Ag | Anordnung zum beschichten eines substrats mit dielektrika |
US5252194A (en) | 1990-01-26 | 1993-10-12 | Varian Associates, Inc. | Rotating sputtering apparatus for selected erosion |
DE4127317C2 (de) * | 1991-08-17 | 1999-09-02 | Leybold Ag | Einrichtung zum Behandeln von Substraten |
US5415757A (en) * | 1991-11-26 | 1995-05-16 | Leybold Aktiengesellschaft | Apparatus for coating a substrate with electrically nonconductive coatings |
JPH06145975A (ja) * | 1992-03-20 | 1994-05-27 | Komag Inc | 炭素フィルムをスパタリングする方法及びその製造物 |
DE4233720C2 (de) * | 1992-10-07 | 2001-05-17 | Leybold Ag | Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen |
DE4401986A1 (de) * | 1994-01-25 | 1995-07-27 | Dresden Vakuumtech Gmbh | Verfahren zum Betreiben eines Vakuumlichtbogenverdampfers und Stromversorgungseinrichtung dafür |
DE4412906C1 (de) * | 1994-04-14 | 1995-07-13 | Fraunhofer Ges Forschung | Verfahren und Einrichtung für die ionengestützte Vakuumbeschichtung |
DE19610012B4 (de) * | 1996-03-14 | 2005-02-10 | Unaxis Deutschland Holding Gmbh | Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre |
SE9704607D0 (sv) | 1997-12-09 | 1997-12-09 | Chemfilt R & D Ab | A method and apparatus for magnetically enhanced sputtering |
JP4120974B2 (ja) * | 1997-06-17 | 2008-07-16 | キヤノンアネルバ株式会社 | 薄膜作製方法および薄膜作製装置 |
US5990668A (en) * | 1997-11-07 | 1999-11-23 | Sierra Applied Sciences, Inc. | A.C. power supply having combined regulator and pulsing circuits |
SE511139C2 (sv) * | 1997-11-20 | 1999-08-09 | Hana Barankova | Plasmabearbetningsapparat med vridbara magneter |
JP4118964B2 (ja) | 1998-03-18 | 2008-07-16 | 新電元工業株式会社 | 消弧回路及び消弧方法 |
US6224725B1 (en) * | 1999-02-09 | 2001-05-01 | Isoflux, Inc. | Unbalanced magnetron sputtering with auxiliary cathode |
US6306265B1 (en) * | 1999-02-12 | 2001-10-23 | Applied Materials, Inc. | High-density plasma for ionized metal deposition capable of exciting a plasma wave |
US6413382B1 (en) * | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
SE525231C2 (sv) * | 2001-06-14 | 2005-01-11 | Chemfilt R & D Ab | Förfarande och anordning för att alstra plasma |
US6853142B2 (en) * | 2002-11-04 | 2005-02-08 | Zond, Inc. | Methods and apparatus for generating high-density plasma |
-
2001
- 2001-06-14 SE SE0102134A patent/SE525231C2/sv not_active IP Right Cessation
-
2002
- 2002-06-14 EP EP02741573.6A patent/EP1404889B1/en not_active Expired - Lifetime
- 2002-06-14 JP JP2003505388A patent/JP4461253B2/ja not_active Expired - Fee Related
- 2002-06-14 US US10/480,826 patent/US8685213B2/en active Active
- 2002-06-14 EP EP11190828.1A patent/EP2434525B9/en not_active Expired - Lifetime
- 2002-06-14 WO PCT/SE2002/001160 patent/WO2002103078A1/en active Application Filing
-
2014
- 2014-02-25 US US14/190,000 patent/US20140291140A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2004536426A (ja) | 2004-12-02 |
EP2434525B1 (en) | 2013-04-24 |
WO2002103078A1 (en) | 2002-12-27 |
US20050092596A1 (en) | 2005-05-05 |
JP4461253B2 (ja) | 2010-05-12 |
EP1404889A1 (en) | 2004-04-07 |
SE0102134D0 (sv) | 2001-06-14 |
SE525231C2 (sv) | 2005-01-11 |
EP2434525A1 (en) | 2012-03-28 |
EP2434525B9 (en) | 2013-11-13 |
EP1404889B1 (en) | 2017-12-20 |
US8685213B2 (en) | 2014-04-01 |
US20140291140A1 (en) | 2014-10-02 |
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Legal Events
Date | Code | Title | Description |
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NUG | Patent has lapsed |