AU2001242287A1 - Method and device for plasma-treating the surface of substrates by ion bombardment - Google Patents

Method and device for plasma-treating the surface of substrates by ion bombardment

Info

Publication number
AU2001242287A1
AU2001242287A1 AU2001242287A AU4228701A AU2001242287A1 AU 2001242287 A1 AU2001242287 A1 AU 2001242287A1 AU 2001242287 A AU2001242287 A AU 2001242287A AU 4228701 A AU4228701 A AU 4228701A AU 2001242287 A1 AU2001242287 A1 AU 2001242287A1
Authority
AU
Australia
Prior art keywords
substrate
electric arc
plasma
etching gas
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001242287A
Inventor
Johannes Stollenwerk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cobes GmbH Nachrichten- und Datentechnik
Original Assignee
Cobes Nachrichten und Dat GmbH
Cobes GmbH Nachrichten- und Datentechnik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cobes Nachrichten und Dat GmbH, Cobes GmbH Nachrichten- und Datentechnik filed Critical Cobes Nachrichten und Dat GmbH
Publication of AU2001242287A1 publication Critical patent/AU2001242287A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/3421—Transferred arc or pilot arc mode

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

In an ion etching method for reducing a substrate thickness, an electric arc is generated in a vacuum chamber such that the electric arc is locally separated from the substrate and circulates about the substrate. A plasma of a supplied etching gas is produced by the electric arc, and the ions of the etching gas are accelerated onto the substrate by an electric potential. The employed device has a vacuum chamber, an etching gas supply, and first and second electrodes supplied with direct or alternating voltage for generating the electric arc that produces the plasma of the etching gas. The first electrode is ring-shaped and the second electrode is arranged centrally to the ring of the first electrode. A magnetic coil creates a migrating magnetic field such that the electric arc is locally separated from the substrate and circulates about the substrate in a carousel fashion.
AU2001242287A 2000-03-03 2001-02-26 Method and device for plasma-treating the surface of substrates by ion bombardment Abandoned AU2001242287A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10010126 2000-03-03
DE10010126A DE10010126C2 (en) 2000-03-03 2000-03-03 Method and device for plasma treatment of the surface of substrates by ion bombardment
PCT/DE2001/000762 WO2001065587A1 (en) 2000-03-03 2001-02-26 Method and device for plasma-treating the surface of substrates by ion bombardment

Publications (1)

Publication Number Publication Date
AU2001242287A1 true AU2001242287A1 (en) 2001-09-12

Family

ID=7633208

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001242287A Abandoned AU2001242287A1 (en) 2000-03-03 2001-02-26 Method and device for plasma-treating the surface of substrates by ion bombardment

Country Status (6)

Country Link
US (1) US7165506B2 (en)
EP (1) EP1273025B1 (en)
AT (1) ATE298927T1 (en)
AU (1) AU2001242287A1 (en)
DE (3) DE10010126C2 (en)
WO (1) WO2001065587A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005036250A (en) * 2003-07-16 2005-02-10 Matsushita Electric Ind Co Ltd Sputtering apparatus
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20060130971A1 (en) * 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
US9997338B2 (en) 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7838964B2 (en) * 2008-02-25 2010-11-23 Fairchild Semiconductor Corporation Micromodules including integrated thin film inductors
US20140263182A1 (en) * 2013-03-15 2014-09-18 Tokyo Electron Limited Dc pulse etcher
US9799494B2 (en) * 2015-04-03 2017-10-24 Tokyo Electron Limited Energetic negative ion impact ionization plasma

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE67903C (en) *
DE657903C (en) 1935-11-05 1938-03-16 Bernhard Berghaus Process for the cast or metallic coating of objects of a metallic or non-metallic nature by means of an electric arc
US4149024A (en) * 1974-07-23 1979-04-10 Asea Aktiebolag Arc furnace for reducing metal oxides and method for operating such a furnace
DE3015296A1 (en) * 1979-05-29 1980-12-11 Balzers Hochvakuum METHOD FOR ETCHING WORKPIECE SURFACES BY MEANS OF A GAS ACTIVATED BY ELECTRIC GAS DISCHARGE
US4612477A (en) * 1983-12-22 1986-09-16 Yale University Triggering device for a vacuum arc in a plasma centrifuge
US4673477A (en) 1984-03-02 1987-06-16 Regents Of The University Of Minnesota Controlled vacuum arc material deposition, method and apparatus
US4620913A (en) * 1985-11-15 1986-11-04 Multi-Arc Vacuum Systems, Inc. Electric arc vapor deposition method and apparatus
JPS62244574A (en) * 1986-04-18 1987-10-24 Koike Sanso Kogyo Co Ltd Method and equipment for nonmobile type plasma welding and cutting
DE3615361C2 (en) * 1986-05-06 1994-09-01 Santos Pereira Ribeiro Car Dos Device for the surface treatment of workpieces
DE4017111C2 (en) 1990-05-28 1998-01-29 Hauzer Holding Arc magnetron device
GB8713986D0 (en) * 1987-06-16 1987-07-22 Shell Int Research Apparatus for plasma surface treating
US5094878A (en) * 1989-06-21 1992-03-10 Nippon Soken, Inc. Process for forming diamond film
WO1991000374A1 (en) * 1989-06-27 1991-01-10 Hauzer Holding Bv Process and device for coating substrates
US5212425A (en) 1990-10-10 1993-05-18 Hughes Aircraft Company Ion implantation and surface processing method and apparatus
CA2065581C (en) * 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
JPH05306192A (en) * 1992-05-07 1993-11-19 Fujitsu Ltd Method and device for synthesizing diamond film
US5535905A (en) 1994-07-29 1996-07-16 General Motors Corporation Etching technique for producing cubic boron nitride films
US5587207A (en) 1994-11-14 1996-12-24 Gorokhovsky; Vladimir I. Arc assisted CVD coating and sintering method
JP3060876B2 (en) * 1995-02-15 2000-07-10 日新電機株式会社 Metal ion implanter
DE19532412C2 (en) * 1995-09-01 1999-09-30 Agrodyn Hochspannungstechnik G Device for surface pretreatment of workpieces
DE19547305A1 (en) 1995-12-18 1997-06-19 Univ Sheffield Coating metal substrates with titanium aluminium nitride for coating steel
DE29615190U1 (en) * 1996-03-11 1996-11-28 Balzers Verschleissschutz GmbH, 55411 Bingen Plant for coating workpieces
US6051114A (en) * 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US6106074A (en) * 1998-10-14 2000-08-22 Chang; Su-Jen Illuminating roller for in-line skates
EP1230664B1 (en) * 1999-11-15 2008-05-07 Lam Research Corporation Processing systems

Also Published As

Publication number Publication date
US7165506B2 (en) 2007-01-23
EP1273025B1 (en) 2005-06-29
DE10010126C2 (en) 2002-10-10
DE50106635D1 (en) 2005-08-04
EP1273025A1 (en) 2003-01-08
WO2001065587A1 (en) 2001-09-07
DE10190781D2 (en) 2003-04-17
ATE298927T1 (en) 2005-07-15
DE10010126A1 (en) 2001-09-20
US20030010747A1 (en) 2003-01-16

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