AU2001242287A1 - Method and device for plasma-treating the surface of substrates by ion bombardment - Google Patents
Method and device for plasma-treating the surface of substrates by ion bombardmentInfo
- Publication number
- AU2001242287A1 AU2001242287A1 AU2001242287A AU4228701A AU2001242287A1 AU 2001242287 A1 AU2001242287 A1 AU 2001242287A1 AU 2001242287 A AU2001242287 A AU 2001242287A AU 4228701 A AU4228701 A AU 4228701A AU 2001242287 A1 AU2001242287 A1 AU 2001242287A1
- Authority
- AU
- Australia
- Prior art keywords
- substrate
- electric arc
- plasma
- etching gas
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/3421—Transferred arc or pilot arc mode
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
In an ion etching method for reducing a substrate thickness, an electric arc is generated in a vacuum chamber such that the electric arc is locally separated from the substrate and circulates about the substrate. A plasma of a supplied etching gas is produced by the electric arc, and the ions of the etching gas are accelerated onto the substrate by an electric potential. The employed device has a vacuum chamber, an etching gas supply, and first and second electrodes supplied with direct or alternating voltage for generating the electric arc that produces the plasma of the etching gas. The first electrode is ring-shaped and the second electrode is arranged centrally to the ring of the first electrode. A magnetic coil creates a migrating magnetic field such that the electric arc is locally separated from the substrate and circulates about the substrate in a carousel fashion.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10010126 | 2000-03-03 | ||
DE10010126A DE10010126C2 (en) | 2000-03-03 | 2000-03-03 | Method and device for plasma treatment of the surface of substrates by ion bombardment |
PCT/DE2001/000762 WO2001065587A1 (en) | 2000-03-03 | 2001-02-26 | Method and device for plasma-treating the surface of substrates by ion bombardment |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001242287A1 true AU2001242287A1 (en) | 2001-09-12 |
Family
ID=7633208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001242287A Abandoned AU2001242287A1 (en) | 2000-03-03 | 2001-02-26 | Method and device for plasma-treating the surface of substrates by ion bombardment |
Country Status (6)
Country | Link |
---|---|
US (1) | US7165506B2 (en) |
EP (1) | EP1273025B1 (en) |
AT (1) | ATE298927T1 (en) |
AU (1) | AU2001242287A1 (en) |
DE (3) | DE10010126C2 (en) |
WO (1) | WO2001065587A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005036250A (en) * | 2003-07-16 | 2005-02-10 | Matsushita Electric Ind Co Ltd | Sputtering apparatus |
US20060051966A1 (en) * | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US20060130971A1 (en) * | 2004-12-21 | 2006-06-22 | Applied Materials, Inc. | Apparatus for generating plasma by RF power |
US9997338B2 (en) | 2005-03-24 | 2018-06-12 | Oerlikon Surface Solutions Ag, Pfäffikon | Method for operating a pulsed arc source |
US7713430B2 (en) * | 2006-02-23 | 2010-05-11 | Micron Technology, Inc. | Using positive DC offset of bias RF to neutralize charge build-up of etch features |
US7838964B2 (en) * | 2008-02-25 | 2010-11-23 | Fairchild Semiconductor Corporation | Micromodules including integrated thin film inductors |
US20140263182A1 (en) * | 2013-03-15 | 2014-09-18 | Tokyo Electron Limited | Dc pulse etcher |
US9799494B2 (en) * | 2015-04-03 | 2017-10-24 | Tokyo Electron Limited | Energetic negative ion impact ionization plasma |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE67903C (en) * | ||||
DE657903C (en) | 1935-11-05 | 1938-03-16 | Bernhard Berghaus | Process for the cast or metallic coating of objects of a metallic or non-metallic nature by means of an electric arc |
US4149024A (en) * | 1974-07-23 | 1979-04-10 | Asea Aktiebolag | Arc furnace for reducing metal oxides and method for operating such a furnace |
DE3015296A1 (en) * | 1979-05-29 | 1980-12-11 | Balzers Hochvakuum | METHOD FOR ETCHING WORKPIECE SURFACES BY MEANS OF A GAS ACTIVATED BY ELECTRIC GAS DISCHARGE |
US4612477A (en) * | 1983-12-22 | 1986-09-16 | Yale University | Triggering device for a vacuum arc in a plasma centrifuge |
US4673477A (en) | 1984-03-02 | 1987-06-16 | Regents Of The University Of Minnesota | Controlled vacuum arc material deposition, method and apparatus |
US4620913A (en) * | 1985-11-15 | 1986-11-04 | Multi-Arc Vacuum Systems, Inc. | Electric arc vapor deposition method and apparatus |
JPS62244574A (en) * | 1986-04-18 | 1987-10-24 | Koike Sanso Kogyo Co Ltd | Method and equipment for nonmobile type plasma welding and cutting |
DE3615361C2 (en) * | 1986-05-06 | 1994-09-01 | Santos Pereira Ribeiro Car Dos | Device for the surface treatment of workpieces |
DE4017111C2 (en) | 1990-05-28 | 1998-01-29 | Hauzer Holding | Arc magnetron device |
GB8713986D0 (en) * | 1987-06-16 | 1987-07-22 | Shell Int Research | Apparatus for plasma surface treating |
US5094878A (en) * | 1989-06-21 | 1992-03-10 | Nippon Soken, Inc. | Process for forming diamond film |
WO1991000374A1 (en) * | 1989-06-27 | 1991-01-10 | Hauzer Holding Bv | Process and device for coating substrates |
US5212425A (en) | 1990-10-10 | 1993-05-18 | Hughes Aircraft Company | Ion implantation and surface processing method and apparatus |
CA2065581C (en) * | 1991-04-22 | 2002-03-12 | Andal Corp. | Plasma enhancement apparatus and method for physical vapor deposition |
JPH05306192A (en) * | 1992-05-07 | 1993-11-19 | Fujitsu Ltd | Method and device for synthesizing diamond film |
US5535905A (en) | 1994-07-29 | 1996-07-16 | General Motors Corporation | Etching technique for producing cubic boron nitride films |
US5587207A (en) | 1994-11-14 | 1996-12-24 | Gorokhovsky; Vladimir I. | Arc assisted CVD coating and sintering method |
JP3060876B2 (en) * | 1995-02-15 | 2000-07-10 | 日新電機株式会社 | Metal ion implanter |
DE19532412C2 (en) * | 1995-09-01 | 1999-09-30 | Agrodyn Hochspannungstechnik G | Device for surface pretreatment of workpieces |
DE19547305A1 (en) | 1995-12-18 | 1997-06-19 | Univ Sheffield | Coating metal substrates with titanium aluminium nitride for coating steel |
DE29615190U1 (en) * | 1996-03-11 | 1996-11-28 | Balzers Verschleissschutz GmbH, 55411 Bingen | Plant for coating workpieces |
US6051114A (en) * | 1997-06-23 | 2000-04-18 | Applied Materials, Inc. | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition |
US6106074A (en) * | 1998-10-14 | 2000-08-22 | Chang; Su-Jen | Illuminating roller for in-line skates |
EP1230664B1 (en) * | 1999-11-15 | 2008-05-07 | Lam Research Corporation | Processing systems |
-
2000
- 2000-03-03 DE DE10010126A patent/DE10010126C2/en not_active Expired - Fee Related
-
2001
- 2001-02-26 EP EP01915065A patent/EP1273025B1/en not_active Expired - Lifetime
- 2001-02-26 AU AU2001242287A patent/AU2001242287A1/en not_active Abandoned
- 2001-02-26 US US10/204,618 patent/US7165506B2/en not_active Expired - Fee Related
- 2001-02-26 AT AT01915065T patent/ATE298927T1/en not_active IP Right Cessation
- 2001-02-26 DE DE50106635T patent/DE50106635D1/en not_active Expired - Fee Related
- 2001-02-26 DE DE10190781T patent/DE10190781D2/en not_active Ceased
- 2001-02-26 WO PCT/DE2001/000762 patent/WO2001065587A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US7165506B2 (en) | 2007-01-23 |
EP1273025B1 (en) | 2005-06-29 |
DE10010126C2 (en) | 2002-10-10 |
DE50106635D1 (en) | 2005-08-04 |
EP1273025A1 (en) | 2003-01-08 |
WO2001065587A1 (en) | 2001-09-07 |
DE10190781D2 (en) | 2003-04-17 |
ATE298927T1 (en) | 2005-07-15 |
DE10010126A1 (en) | 2001-09-20 |
US20030010747A1 (en) | 2003-01-16 |
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