DE60336574D1 - Gepulste Hochleistungsplasmabearbeitungsanlage mit magnetisch erhöhter Wirkung - Google Patents
Gepulste Hochleistungsplasmabearbeitungsanlage mit magnetisch erhöhter WirkungInfo
- Publication number
- DE60336574D1 DE60336574D1 DE60336574T DE60336574T DE60336574D1 DE 60336574 D1 DE60336574 D1 DE 60336574D1 DE 60336574 T DE60336574 T DE 60336574T DE 60336574 T DE60336574 T DE 60336574T DE 60336574 D1 DE60336574 D1 DE 60336574D1
- Authority
- DE
- Germany
- Prior art keywords
- cathode
- weakly
- proximate
- plasma processing
- ionized plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Magnetic Treatment Devices (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/065,551 US6896775B2 (en) | 2002-10-29 | 2002-10-29 | High-power pulsed magnetically enhanced plasma processing |
PCT/US2003/034191 WO2004040615A2 (en) | 2002-10-29 | 2003-10-28 | High-power pulsed magnetically enhanced plasma processing |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60336574D1 true DE60336574D1 (de) | 2011-05-12 |
Family
ID=32106072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60336574T Expired - Lifetime DE60336574D1 (de) | 2002-10-29 | 2003-10-28 | Gepulste Hochleistungsplasmabearbeitungsanlage mit magnetisch erhöhter Wirkung |
Country Status (7)
Country | Link |
---|---|
US (2) | US6896775B2 (de) |
EP (1) | EP1556882B1 (de) |
JP (1) | JP2006505128A (de) |
AT (1) | ATE504074T1 (de) |
AU (1) | AU2003284194A1 (de) |
DE (1) | DE60336574D1 (de) |
WO (1) | WO2004040615A2 (de) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7541283B2 (en) * | 2002-08-30 | 2009-06-02 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
US6806651B1 (en) * | 2003-04-22 | 2004-10-19 | Zond, Inc. | High-density plasma source |
US9771648B2 (en) | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
US7095179B2 (en) * | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US7663319B2 (en) * | 2004-02-22 | 2010-02-16 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
US9123508B2 (en) * | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
US7084573B2 (en) * | 2004-03-05 | 2006-08-01 | Tokyo Electron Limited | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition |
US7750575B2 (en) * | 2004-04-07 | 2010-07-06 | Zond, Inc. | High density plasma source |
EP1609882A1 (de) * | 2004-06-24 | 2005-12-28 | METAPLAS IONON Oberflächenveredelungstechnik GmbH | Kathodenzerstäubungsvorrichtung und -verfahren |
US20090053833A1 (en) * | 2005-01-05 | 2009-02-26 | Ulvac, Inc. | Method of Manufacturing Magnetic Multi-layered Film |
US20090214787A1 (en) * | 2005-10-18 | 2009-08-27 | Southwest Research Institute | Erosion Resistant Coatings |
WO2007048098A2 (en) * | 2005-10-18 | 2007-04-26 | Southwest Research Institute | Erosion resistant coatings |
JP2008013829A (ja) * | 2006-07-07 | 2008-01-24 | Fujitsu Ltd | 金属酸化膜の成膜方法 |
KR100847007B1 (ko) * | 2007-05-31 | 2008-07-17 | 세메스 주식회사 | 플라즈마를 이용한 기판 처리 장치 및 방법 |
US7966909B2 (en) * | 2007-07-25 | 2011-06-28 | The Gillette Company | Process of forming a razor blade |
US8133359B2 (en) * | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
US9039871B2 (en) | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
US9520275B2 (en) * | 2008-03-21 | 2016-12-13 | Tokyo Electron Limited | Mono-energetic neutral beam activated chemical processing system and method of using |
US9272359B2 (en) | 2008-05-30 | 2016-03-01 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
WO2009146439A1 (en) | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | System, method and apparatus for generating plasma |
WO2009146432A1 (en) | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | Plasma-based chemical source device and method of use thereof |
JP5207892B2 (ja) * | 2008-09-11 | 2013-06-12 | 東京エレクトロン株式会社 | ドライエッチング方法 |
TWI365562B (en) * | 2008-10-03 | 2012-06-01 | Ind Tech Res Inst | Positive electrode and method for manufacturing the same and lithium battery utilizing the same |
US8222822B2 (en) | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
AU2010349785B2 (en) | 2010-03-31 | 2014-02-27 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
US8790791B2 (en) | 2010-04-15 | 2014-07-29 | Southwest Research Institute | Oxidation resistant nanocrystalline MCrAl(Y) coatings and methods of forming such coatings |
TWI554630B (zh) | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | 減少沉積不對稱性的沉積設備及方法 |
WO2012114941A1 (ja) * | 2011-02-25 | 2012-08-30 | 東レ株式会社 | プラズマ処理用マグネトロン電極 |
US9511572B2 (en) | 2011-05-25 | 2016-12-06 | Southwest Research Institute | Nanocrystalline interlayer coating for increasing service life of thermal barrier coating on high temperature components |
WO2013100073A1 (ja) * | 2011-12-28 | 2013-07-04 | 大日本印刷株式会社 | プラズマを使った前処理装置を有した蒸着装置 |
JP2014125651A (ja) * | 2012-12-26 | 2014-07-07 | Kobe Steel Ltd | インライン式プラズマcvd装置 |
DK2954758T5 (en) | 2013-02-06 | 2017-03-20 | Arcelormittal Investigación Y Desarrollo Sl | plasma Source |
US9249500B2 (en) | 2013-02-07 | 2016-02-02 | Applied Materials, Inc. | PVD RF DC open/closed loop selectable magnetron |
US9532826B2 (en) | 2013-03-06 | 2017-01-03 | Covidien Lp | System and method for sinus surgery |
US9555145B2 (en) | 2013-03-13 | 2017-01-31 | Covidien Lp | System and method for biofilm remediation |
US9978568B2 (en) | 2013-08-12 | 2018-05-22 | Tokyo Electron Limited | Self-sustained non-ambipolar direct current (DC) plasma at low power |
CN103590011B (zh) * | 2013-11-08 | 2016-03-09 | 蚌埠玻璃工业设计研究院 | 一种磁控溅射制备azo透明导电膜的装置及方法 |
WO2015134197A1 (en) * | 2014-03-06 | 2015-09-11 | Applied Materials, Inc. | Plasma abatement of compounds containing heavy atoms |
US9336997B2 (en) | 2014-03-17 | 2016-05-10 | Applied Materials, Inc. | RF multi-feed structure to improve plasma uniformity |
US9523146B1 (en) | 2015-06-17 | 2016-12-20 | Southwest Research Institute | Ti—Si—C—N piston ring coatings |
US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
JP7481823B2 (ja) * | 2018-11-05 | 2024-05-13 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
WO2020154310A1 (en) | 2019-01-22 | 2020-07-30 | Applied Materials, Inc. | Feedback loop for controlling a pulsed voltage waveform |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
US11776793B2 (en) | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4588490A (en) * | 1985-05-22 | 1986-05-13 | International Business Machines Corporation | Hollow cathode enhanced magnetron sputter device |
US4983253A (en) * | 1988-05-27 | 1991-01-08 | University Of Houston-University Park | Magnetically enhanced RIE process and apparatus |
DE69032952T2 (de) | 1989-11-15 | 1999-09-30 | Haruhisa Kinoshita | Trocken-Behandlungsvorrichtung |
JP2819420B2 (ja) * | 1989-11-20 | 1998-10-30 | 東京エレクトロン株式会社 | イオン源 |
JP3076367B2 (ja) * | 1990-11-29 | 2000-08-14 | キヤノン株式会社 | プラズマ処理装置 |
US5728261A (en) * | 1995-05-26 | 1998-03-17 | University Of Houston | Magnetically enhanced radio frequency reactive ion etching method and apparatus |
SE9704607D0 (sv) | 1997-12-09 | 1997-12-09 | Chemfilt R & D Ab | A method and apparatus for magnetically enhanced sputtering |
JPH11354509A (ja) * | 1998-04-07 | 1999-12-24 | Seiko Epson Corp | プラズマエッチングの終点検出方法及びプラズマエッチング装置 |
US6057244A (en) * | 1998-07-31 | 2000-05-02 | Applied Materials, Inc. | Method for improved sputter etch processing |
US6291357B1 (en) * | 1999-10-06 | 2001-09-18 | Applied Materials, Inc. | Method and apparatus for etching a substrate with reduced microloading |
US6270634B1 (en) * | 1999-10-29 | 2001-08-07 | Applied Materials, Inc. | Method for plasma etching at a high etch rate |
US6451703B1 (en) * | 2000-03-10 | 2002-09-17 | Applied Materials, Inc. | Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas |
SE519931C2 (sv) | 2000-06-19 | 2003-04-29 | Chemfilt R & D Ab | Anordning och förfarande för pulsad, starkt joniserad magnetronsputtering |
US6413382B1 (en) * | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
US6777037B2 (en) * | 2001-02-21 | 2004-08-17 | Hitachi, Ltd. | Plasma processing method and apparatus |
SE525231C2 (sv) * | 2001-06-14 | 2005-01-11 | Chemfilt R & D Ab | Förfarande och anordning för att alstra plasma |
US7374636B2 (en) * | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
-
2002
- 2002-10-29 US US10/065,551 patent/US6896775B2/en not_active Expired - Fee Related
-
2003
- 2003-10-28 JP JP2004548534A patent/JP2006505128A/ja not_active Withdrawn
- 2003-10-28 WO PCT/US2003/034191 patent/WO2004040615A2/en active Application Filing
- 2003-10-28 AU AU2003284194A patent/AU2003284194A1/en not_active Abandoned
- 2003-10-28 EP EP03776584A patent/EP1556882B1/de not_active Expired - Lifetime
- 2003-10-28 DE DE60336574T patent/DE60336574D1/de not_active Expired - Lifetime
- 2003-10-28 AT AT03776584T patent/ATE504074T1/de not_active IP Right Cessation
-
2005
- 2005-03-28 US US11/091,854 patent/US20050167263A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20040082187A1 (en) | 2004-04-29 |
ATE504074T1 (de) | 2011-04-15 |
JP2006505128A (ja) | 2006-02-09 |
EP1556882B1 (de) | 2011-03-30 |
EP1556882A2 (de) | 2005-07-27 |
US20050167263A1 (en) | 2005-08-04 |
AU2003284194A1 (en) | 2004-05-25 |
WO2004040615A2 (en) | 2004-05-13 |
US6896775B2 (en) | 2005-05-24 |
WO2004040615A3 (en) | 2004-09-23 |
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