KR950010284B1 - 기준전압 발생회로 - Google Patents

기준전압 발생회로 Download PDF

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Publication number
KR950010284B1
KR950010284B1 KR1019920004474A KR920004474A KR950010284B1 KR 950010284 B1 KR950010284 B1 KR 950010284B1 KR 1019920004474 A KR1019920004474 A KR 1019920004474A KR 920004474 A KR920004474 A KR 920004474A KR 950010284 B1 KR950010284 B1 KR 950010284B1
Authority
KR
South Korea
Prior art keywords
reference voltage
electrode connected
pmos transistor
drain electrode
voltage
Prior art date
Application number
KR1019920004474A
Other languages
English (en)
Korean (ko)
Other versions
KR930020658A (ko
Inventor
이재형
Original Assignee
삼성전자주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사, 김광호 filed Critical 삼성전자주식회사
Priority to KR1019920004474A priority Critical patent/KR950010284B1/ko
Priority to TW081102803A priority patent/TW250603B/zh
Priority to FR9205286A priority patent/FR2688904B1/fr
Priority to GB9209196A priority patent/GB2265478B/en
Priority to DE4214106A priority patent/DE4214106A1/de
Priority to ITMI921017A priority patent/IT1254948B/it
Priority to JP4123538A priority patent/JPH0643953A/ja
Publication of KR930020658A publication Critical patent/KR930020658A/ko
Application granted granted Critical
Publication of KR950010284B1 publication Critical patent/KR950010284B1/ko

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
KR1019920004474A 1992-03-18 1992-03-18 기준전압 발생회로 KR950010284B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019920004474A KR950010284B1 (ko) 1992-03-18 1992-03-18 기준전압 발생회로
TW081102803A TW250603B (fr) 1992-03-18 1992-04-10
FR9205286A FR2688904B1 (fr) 1992-03-18 1992-04-29 Circuit de generation de tension de reference.
GB9209196A GB2265478B (en) 1992-03-18 1992-04-29 Reference voltage generating circuit
DE4214106A DE4214106A1 (de) 1992-03-18 1992-04-29 Bezugsspannungsgeneratorschaltung
ITMI921017A IT1254948B (it) 1992-03-18 1992-04-29 Circuito generatore di una tensione di riferimento
JP4123538A JPH0643953A (ja) 1992-03-18 1992-05-15 基準電圧発生回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920004474A KR950010284B1 (ko) 1992-03-18 1992-03-18 기준전압 발생회로

Publications (2)

Publication Number Publication Date
KR930020658A KR930020658A (ko) 1993-10-20
KR950010284B1 true KR950010284B1 (ko) 1995-09-12

Family

ID=19330566

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920004474A KR950010284B1 (ko) 1992-03-18 1992-03-18 기준전압 발생회로

Country Status (7)

Country Link
JP (1) JPH0643953A (fr)
KR (1) KR950010284B1 (fr)
DE (1) DE4214106A1 (fr)
FR (1) FR2688904B1 (fr)
GB (1) GB2265478B (fr)
IT (1) IT1254948B (fr)
TW (1) TW250603B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9423034D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A reference circuit
DE69521287T2 (de) * 1995-03-24 2002-05-02 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Schaltungsanordnung zur Erzeugung einer Referenzspannung und Detektion eines Versorgungsspannungsabfalls und zugehöriges Verfahren
KR100496792B1 (ko) * 1997-09-04 2005-09-08 삼성전자주식회사 기준전압발생회로
US6242972B1 (en) * 1999-10-27 2001-06-05 Silicon Storage Technology, Inc. Clamp circuit using PMOS-transistors with a weak temperature dependency
KR101133758B1 (ko) * 2005-01-19 2012-04-09 삼성전자주식회사 센서 및 이를 구비한 박막 트랜지스터 표시판
JP5482126B2 (ja) * 2009-11-13 2014-04-23 ミツミ電機株式会社 参照電圧発生回路および受信回路
CN107015594A (zh) * 2017-05-30 2017-08-04 长沙方星腾电子科技有限公司 一种偏置电流产生电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
US4464588A (en) * 1982-04-01 1984-08-07 National Semiconductor Corporation Temperature stable CMOS voltage reference
US4446383A (en) * 1982-10-29 1984-05-01 International Business Machines Reference voltage generating circuit
US4847518A (en) * 1987-11-13 1989-07-11 Harris Semiconductor Patents, Inc. CMOS voltage divider circuits
GB2214333B (en) * 1988-01-13 1992-01-29 Motorola Inc Voltage sources
JP2674669B2 (ja) * 1989-08-23 1997-11-12 株式会社東芝 半導体集積回路
KR920004587B1 (ko) * 1989-10-24 1992-06-11 삼성전자 주식회사 메모리장치의 기준전압 안정화회로

Also Published As

Publication number Publication date
IT1254948B (it) 1995-10-11
ITMI921017A1 (it) 1993-10-29
DE4214106A1 (de) 1993-09-23
JPH0643953A (ja) 1994-02-18
GB2265478A (en) 1993-09-29
TW250603B (fr) 1995-07-01
KR930020658A (ko) 1993-10-20
FR2688904B1 (fr) 1994-06-03
ITMI921017A0 (it) 1992-04-29
FR2688904A1 (fr) 1993-09-24
GB2265478B (en) 1996-01-03
GB9209196D0 (en) 1992-06-17

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E902 Notification of reason for refusal
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Payment date: 19980828

Year of fee payment: 4

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