KR940020174A - 감광성 수지 조성물 및 전자 부품용 보호막 - Google Patents

감광성 수지 조성물 및 전자 부품용 보호막 Download PDF

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KR940020174A
KR940020174A KR1019940002703A KR19940002703A KR940020174A KR 940020174 A KR940020174 A KR 940020174A KR 1019940002703 A KR1019940002703 A KR 1019940002703A KR 19940002703 A KR19940002703 A KR 19940002703A KR 940020174 A KR940020174 A KR 940020174A
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South Korea
Prior art keywords
resin composition
photosensitive resin
organic group
protective film
photosensitive
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KR1019940002703A
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English (en)
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KR100286427B1 (ko
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히로시게 오끼노시마
히데또 가또
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카나가와 치히로
신에쓰 가가꾸 고교 가부시끼가이샤
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Publication of KR940020174A publication Critical patent/KR940020174A/ko
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Publication of KR100286427B1 publication Critical patent/KR100286427B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H05K3/287—Photosensitive compositions

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Materials For Photolithography (AREA)

Abstract

본 발명의 감광성 수지 조성물은 하기 일반식(1)로 표시되는 폴리이미드 전구체와 o－나프토퀴논디아지드술폰산 에스테르로 이루어진다.
식 중, X는 4가의 유기기이고, Y는 2가의 유기기이고, R1내지 R3은 수소 원자 또는 탄소수 1 내지 10의 탄화수소기이고, p,q 및 m은 1이상의 정수이다.
본 발명의 감광성 수지 조성물은 이온성 불순물의 혼입이 거의 없고, 그의 용액은 보존 안정성이 우수하고, 양호한 감도를 가지며, 용이하게 패턴화된 수지피막을 제공한다.

Description

감광성 수지 조성물 및 전자 부품용 보호막
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 하기 일반식(1)로 표시되는 중합체(A)와 감광성 디아조퀴논 화합물(B)로 이루어지는 감광성 수지 조성물.
    식 중, X는 방향족 고리 또는 지방족 고리를 갖는 4가의 유기기이고, Y는 2가의 유기기이고, R1, R2및 R3은 각각 동일하거나 상이한 것으로서, 수소 원자 또는 탄소수 1 내지 10의 1가 유기기이고, p,q,m은 1이상의 정수이며, 1/20q/p9를 만족시키는 정수이다.
  2. 제1항에 있어서, 감광성 디아조퀴논 화합물(B)가 중합체(A) 100중량부당 2 내지 100중량부의 양으로 배합되어 있는 감광성 수지 조성물.
  3. 제1항에 있어서, 감광성 디아조퀴논 화합물(B)가 o－나프토퀴논디아지드술폰산 유도체인 감광성 수지 조성물.
  4. 제1항에 기재한 감광성 수지 조성물을 경화시켜서 얻은 전자 부품용 보호막.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940002703A 1993-02-17 1994-02-16 감광성수지조성물및전자부품용보호막 KR100286427B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-51418 1993-02-17
JP5051418A JP2787531B2 (ja) 1993-02-17 1993-02-17 感光性樹脂組成物及び電子部品用保護膜

Publications (2)

Publication Number Publication Date
KR940020174A true KR940020174A (ko) 1994-09-15
KR100286427B1 KR100286427B1 (ko) 2001-09-17

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KR1019940002703A KR100286427B1 (ko) 1993-02-17 1994-02-16 감광성수지조성물및전자부품용보호막

Country Status (4)

Country Link
US (1) US5441845A (ko)
JP (1) JP2787531B2 (ko)
KR (1) KR100286427B1 (ko)
TW (1) TW270979B (ko)

Families Citing this family (14)

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US5573886A (en) * 1994-01-21 1996-11-12 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition comprising a polyimide precursor and method for making a polyimide film pattern from the same
JPH09319082A (ja) * 1996-05-27 1997-12-12 Hitachi Ltd ポジ型感光性樹脂組成物及びそれを用いた電子装置
JP3037633B2 (ja) * 1997-04-18 2000-04-24 オクシデンタル ケミカル コーポレイション ポリイミドのパターン作製
US6808766B1 (en) * 1998-08-26 2004-10-26 Nissan Chemical Industries, Ltd. Liquid crystal alignment agent and liquid crystal device using the liquid crystal alignment and method for alignment of liquid crystal molecules
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CN101373296B (zh) 2007-08-24 2012-07-04 株式会社日立显示器 液晶显示装置及其制造方法
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KR101864913B1 (ko) * 2011-03-31 2018-06-05 닛산 가가쿠 고교 가부시키 가이샤 액정 배향제 및 그것을 사용한 액정 배향막
WO2020158795A1 (ja) * 2019-01-31 2020-08-06 日産化学株式会社 液晶配向剤及びそれを用いた液晶配向膜及び液晶表示素子
JP2022029427A (ja) * 2020-08-04 2022-02-17 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7431696B2 (ja) * 2020-08-04 2024-02-15 信越化学工業株式会社 ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品

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Also Published As

Publication number Publication date
TW270979B (ko) 1996-02-21
KR100286427B1 (ko) 2001-09-17
JPH07319162A (ja) 1995-12-08
JP2787531B2 (ja) 1998-08-20
US5441845A (en) 1995-08-15

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