TW270979B - - Google Patents

Info

Publication number
TW270979B
TW270979B TW083100543A TW83100543A TW270979B TW 270979 B TW270979 B TW 270979B TW 083100543 A TW083100543 A TW 083100543A TW 83100543 A TW83100543 A TW 83100543A TW 270979 B TW270979 B TW 270979B
Authority
TW
Taiwan
Application number
TW083100543A
Original Assignee
Shinetsu Chem Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chem Ind Co filed Critical Shinetsu Chem Ind Co
Application granted granted Critical
Publication of TW270979B publication Critical patent/TW270979B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H05K3/287—Photosensitive compositions

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Manufacturing & Machinery (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Materials For Photolithography (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Formation Of Insulating Films (AREA)
TW083100543A 1993-02-17 1994-01-22 TW270979B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5051418A JP2787531B2 (ja) 1993-02-17 1993-02-17 感光性樹脂組成物及び電子部品用保護膜

Publications (1)

Publication Number Publication Date
TW270979B true TW270979B (zh) 1996-02-21

Family

ID=12886386

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083100543A TW270979B (zh) 1993-02-17 1994-01-22

Country Status (4)

Country Link
US (1) US5441845A (zh)
JP (1) JP2787531B2 (zh)
KR (1) KR100286427B1 (zh)
TW (1) TW270979B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5573886A (en) * 1994-01-21 1996-11-12 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition comprising a polyimide precursor and method for making a polyimide film pattern from the same
JPH09319082A (ja) * 1996-05-27 1997-12-12 Hitachi Ltd ポジ型感光性樹脂組成物及びそれを用いた電子装置
JP3037633B2 (ja) * 1997-04-18 2000-04-24 オクシデンタル ケミカル コーポレイション ポリイミドのパターン作製
EP1111442A4 (en) * 1998-08-26 2003-01-08 Nissan Chemical Ind Ltd AGENTS FOR TREATING LIQUID CRYSTAL ORIENTATION LAYERS AND A LIQUID CRYSTAL DEVICE USING THIS AND METHOD FOR ALIGNING LIQUID CRYSTALS
JP4604141B2 (ja) * 2000-02-16 2010-12-22 株式会社ピーアイ技術研究所 感光性ポリイミドを用いたポリイミドパターンの形成方法及びそのための組成物
EP1491952B1 (en) * 2003-06-23 2015-10-07 Sumitomo Bakelite Co., Ltd. Positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
TW200512543A (en) * 2003-08-06 2005-04-01 Sumitomo Bakelite Co Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
KR101122446B1 (ko) * 2004-01-14 2012-02-29 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 감광성 중합체 조성물, 패턴의 제조법 및 전자부품
CN101373296B (zh) * 2007-08-24 2012-07-04 株式会社日立显示器 液晶显示装置及其制造方法
CN101477309B (zh) * 2009-01-21 2014-05-07 北京波米科技有限公司 正性光敏性聚酰胺酸酯树脂组合物及其制备方法与应用
JP6056752B2 (ja) * 2011-03-31 2017-01-11 日産化学工業株式会社 液晶配向剤及びそれを用いた液晶配向膜
JP7469744B2 (ja) * 2019-01-31 2024-04-17 日産化学株式会社 液晶配向剤及びそれを用いた液晶配向膜及び液晶表示素子
JP2022029427A (ja) * 2020-08-04 2022-02-17 信越化学工業株式会社 ネガ型感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623870A (en) * 1969-07-22 1971-11-30 Bell Telephone Labor Inc Technique for the preparation of thermally stable photoresist
NL177718C (nl) * 1973-02-22 1985-11-01 Siemens Ag Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren.
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
JPS5545746A (en) * 1978-09-29 1980-03-31 Hitachi Ltd Reactive polymer composition
US4515887A (en) * 1983-08-29 1985-05-07 General Electric Company Photopatternable dielectric compositions, method for making and use
US4587204A (en) * 1983-08-29 1986-05-06 General Electric Company Photopatternable dielectric compositions, method for making and use
JPS62275129A (ja) * 1986-05-23 1987-11-30 Mitsubishi Chem Ind Ltd 耐熱感光性材料
JPS6431150A (en) * 1987-07-27 1989-02-01 Toa Nenryo Kogyo Kk Heat resistant photosensitive material
DE3837612A1 (de) * 1988-11-05 1990-05-23 Ciba Geigy Ag Positiv-fotoresists von polyimid-typ
US5288588A (en) * 1989-10-27 1994-02-22 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition comprising an o-quinone diazide as a photosensitive compound
US5114826A (en) * 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
JPH03259260A (ja) * 1990-03-09 1991-11-19 Fujitsu Ltd レジスト組成物及びレジストパターンの形成方法
JP3011457B2 (ja) * 1990-11-30 2000-02-21 株式会社東芝 感光性樹脂組成物
JPH04313756A (ja) * 1991-04-11 1992-11-05 Shin Etsu Chem Co Ltd 感光材及びその製造方法
US5302489A (en) * 1991-10-29 1994-04-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions containing base polymer which is substantially insoluble at pH between 7 and 10, quinonediazide acid generator and silanol solubility enhancer
JP2674415B2 (ja) * 1992-01-27 1997-11-12 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
JPH06208226A (ja) * 1993-01-11 1994-07-26 Hitachi Chem Co Ltd 耐熱性感光性重合体組成物及びレリーフパターンの製造法

Also Published As

Publication number Publication date
US5441845A (en) 1995-08-15
KR100286427B1 (ko) 2001-09-17
JPH07319162A (ja) 1995-12-08
KR940020174A (ko) 1994-09-15
JP2787531B2 (ja) 1998-08-20

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