KR940019678A - 신규한 오늄염 및 이를 이용한 포지티브형 레지스트재료 - Google Patents

신규한 오늄염 및 이를 이용한 포지티브형 레지스트재료 Download PDF

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Publication number
KR940019678A
KR940019678A KR1019940002267A KR19940002267A KR940019678A KR 940019678 A KR940019678 A KR 940019678A KR 1019940002267 A KR1019940002267 A KR 1019940002267A KR 19940002267 A KR19940002267 A KR 19940002267A KR 940019678 A KR940019678 A KR 940019678A
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KR
South Korea
Prior art keywords
positive resist
same
onium salts
novel onium
resist materials
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KR1019940002267A
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English (en)
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KR100295602B1 (ko
Inventor
후지오 야기하야시
토모요시 후리하타
쥰 와타나베
아키노부 다나카
요시오 가와이
타다히토 마쓰다
Original Assignee
가나가와 치히로
신에쯔가가쿠고오교오 가부시키가이샤
고지마 히토시
니혼덴신뎅와 가부시키가이샤
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Application filed by 가나가와 치히로, 신에쯔가가쿠고오교오 가부시키가이샤, 고지마 히토시, 니혼덴신뎅와 가부시키가이샤 filed Critical 가나가와 치히로
Publication of KR940019678A publication Critical patent/KR940019678A/ko
Application granted granted Critical
Publication of KR100295602B1 publication Critical patent/KR100295602B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

본 발명은 포지티브형 레지스트 용으로서 사용하는 산발생제로서 적합한 신규의 오늄염을 제공하는 것 및 그것을 사용한 종래에 없는 고감도, 고해상성 및 우수한 프로세스 적성을 가진 고에너지선용 포지티브형 레지스트 재료를 제공하는 것으로서 일반식(R)3S+M로 표시되는 신규의 오늄염 및 그것을 사용한 포지티브형 레지스트 재료; 단지 일반식중의 R는 방향족기이며, 각 R의 적어도 하나는 t-알콕시기로 치환된 페닐기이며 각 R는 같거나 달라도 되고, 또 M는 술포늄의 음이온인 것을 특징으로 한다.

Description

신규한 오늄염 및 이를 이용한 포지티브형 레지스트재료
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 일반식(R)3S+M로 표시되는 신규함 오늄염; 여기서 R는 방향족기이고, 각각의 R중 적어도 하나는 t-알콕시기로 치환된 페닐기이고, 각각의 R은 서로 동일하거나 달라도 되고; M은 술포늄염의 음이온이다.
  2. 일부의 수산기의 수소원자가 t-부톡시카보닐기로 치환된(히드록시 스틸렌) 수지(a), 용해저해제(b) 및 제1항에 따른 오늄염(c)을 각각 중량백분율로 0.55≤a, 0.07≤b≤0.40, 0.005≤c≤0.15 및 a+b+c=1이 되도록 함유함과 동시에 알카리 수용액으로 현상하는 것이 가능한 고에너지선에 감응하는 포지티브형 레지스트재료.
  3. 제1항에 있어서, 폴리(히드록시 스틸렌)이 리빙 중합 반응에 의해 얻어지는 단분산성 폴리(히드록시 스틸렌)인 포지티브형 레지스트재료.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940002267A 1993-02-08 1994-02-07 신규한오늄염및이를이용한포지티브형레지스트재료 KR100295602B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4171593 1993-02-08
JP93-41715 1993-02-08
JP93-242101 1993-09-02
JP5242101A JP2719748B2 (ja) 1993-02-08 1993-09-02 新規なオニウム塩及びそれを用いたポジ型レジスト材料

Publications (2)

Publication Number Publication Date
KR940019678A true KR940019678A (ko) 1994-09-14
KR100295602B1 KR100295602B1 (ko) 2002-01-09

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KR1019940002267A KR100295602B1 (ko) 1993-02-08 1994-02-07 신규한오늄염및이를이용한포지티브형레지스트재료

Country Status (5)

Country Link
US (2) US20030096189A1 (ko)
EP (1) EP0615163B1 (ko)
JP (1) JP2719748B2 (ko)
KR (1) KR100295602B1 (ko)
DE (1) DE69422319T2 (ko)

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DE69508812T2 (de) * 1994-01-28 1999-11-04 Shinetsu Chemical Co Sulfoniumsalz und chemisch verstärkte Positivresistzusammensetzungen
JP2964874B2 (ja) * 1994-06-10 1999-10-18 信越化学工業株式会社 化学増幅ポジ型レジスト材料
EP0723201A1 (en) * 1995-01-20 1996-07-24 Ocg Microelectronic Materials, Inc. Phenolic-resins with acid-labile protecting groups
EP0727711A3 (en) * 1995-02-17 1997-04-09 Ocg Microelectronic Materials Photoresist compositions containing supercritical fluid fractionated polymeric resin binders
JP3587413B2 (ja) * 1995-12-20 2004-11-10 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
US5731364A (en) * 1996-01-24 1998-03-24 Shipley Company, L.L.C. Photoimageable compositions comprising multiple arylsulfonium photoactive compounds
KR20020032791A (ko) * 2000-10-27 2002-05-04 안복현 포토레지스트 조성물
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4393010B2 (ja) * 2001-04-10 2010-01-06 富士通マイクロエレクトロニクス株式会社 化学増幅レジスト組成物及びそれを用いたパターン形成方法
US7605138B2 (en) * 2002-07-03 2009-10-20 Coley Pharmaceutical Group, Inc. Nucleic acid compositions for stimulating immune responses
US7569553B2 (en) * 2002-07-03 2009-08-04 Coley Pharmaceutical Group, Inc. Nucleic acid compositions for stimulating immune responses
US7807803B2 (en) * 2002-07-03 2010-10-05 Coley Pharmaceutical Group, Inc. Nucleic acid compositions for stimulating immune responses
US7576066B2 (en) * 2002-07-03 2009-08-18 Coley Pharmaceutical Group, Inc. Nucleic acid compositions for stimulating immune responses
JP4557159B2 (ja) 2004-04-15 2010-10-06 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びこれを用いたパターン形成方法
JP4420226B2 (ja) * 2005-02-18 2010-02-24 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法

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Also Published As

Publication number Publication date
EP0615163B1 (en) 1999-12-29
JPH06287174A (ja) 1994-10-11
US20040076905A1 (en) 2004-04-22
JP2719748B2 (ja) 1998-02-25
KR100295602B1 (ko) 2002-01-09
US6841334B2 (en) 2005-01-11
DE69422319D1 (de) 2000-02-03
DE69422319T2 (de) 2000-08-24
EP0615163A1 (en) 1994-09-14
US20030096189A1 (en) 2003-05-22

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