DE69422319T2 - Positiv arbeitende Resistmaterialien mit besonderen Oniumsalzen - Google Patents

Positiv arbeitende Resistmaterialien mit besonderen Oniumsalzen

Info

Publication number
DE69422319T2
DE69422319T2 DE69422319T DE69422319T DE69422319T2 DE 69422319 T2 DE69422319 T2 DE 69422319T2 DE 69422319 T DE69422319 T DE 69422319T DE 69422319 T DE69422319 T DE 69422319T DE 69422319 T2 DE69422319 T2 DE 69422319T2
Authority
DE
Germany
Prior art keywords
special
positive resist
onium salts
resist materials
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69422319T
Other languages
English (en)
Other versions
DE69422319D1 (de
Inventor
Fujio Yagihasi
Tomoyoshi Furihata
Jun Watanabe
Akinobu Tanaka
Yoshio Kawai
Tadahito Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Shin Etsu Chemical Co Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Nippon Telegraph and Telephone Corp filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69422319D1 publication Critical patent/DE69422319D1/de
Publication of DE69422319T2 publication Critical patent/DE69422319T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69422319T 1993-02-08 1994-02-04 Positiv arbeitende Resistmaterialien mit besonderen Oniumsalzen Expired - Lifetime DE69422319T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP4171593 1993-02-08
JP5242101A JP2719748B2 (ja) 1993-02-08 1993-09-02 新規なオニウム塩及びそれを用いたポジ型レジスト材料

Publications (2)

Publication Number Publication Date
DE69422319D1 DE69422319D1 (de) 2000-02-03
DE69422319T2 true DE69422319T2 (de) 2000-08-24

Family

ID=26381364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69422319T Expired - Lifetime DE69422319T2 (de) 1993-02-08 1994-02-04 Positiv arbeitende Resistmaterialien mit besonderen Oniumsalzen

Country Status (5)

Country Link
US (2) US20030096189A1 (de)
EP (1) EP0615163B1 (de)
JP (1) JP2719748B2 (de)
KR (1) KR100295602B1 (de)
DE (1) DE69422319T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69508812T2 (de) * 1994-01-28 1999-11-04 Shinetsu Chemical Co Sulfoniumsalz und chemisch verstärkte Positivresistzusammensetzungen
JP2964874B2 (ja) * 1994-06-10 1999-10-18 信越化学工業株式会社 化学増幅ポジ型レジスト材料
EP0723201A1 (de) * 1995-01-20 1996-07-24 Ocg Microelectronic Materials, Inc. Phenolharze mit säurelabilen Schutzgruppen
EP0727711A3 (de) * 1995-02-17 1997-04-09 Ocg Microelectronic Materials Fotoresistzusammensetzungen, die superkritische Fluid fraktionierte polymerische Harzbindemittel enthalten
JP3587413B2 (ja) * 1995-12-20 2004-11-10 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
US5731364A (en) * 1996-01-24 1998-03-24 Shipley Company, L.L.C. Photoimageable compositions comprising multiple arylsulfonium photoactive compounds
KR20020032791A (ko) * 2000-10-27 2002-05-04 안복현 포토레지스트 조성물
JP4438218B2 (ja) * 2000-11-16 2010-03-24 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4393010B2 (ja) * 2001-04-10 2010-01-06 富士通マイクロエレクトロニクス株式会社 化学増幅レジスト組成物及びそれを用いたパターン形成方法
US7576066B2 (en) * 2002-07-03 2009-08-18 Coley Pharmaceutical Group, Inc. Nucleic acid compositions for stimulating immune responses
US7569553B2 (en) * 2002-07-03 2009-08-04 Coley Pharmaceutical Group, Inc. Nucleic acid compositions for stimulating immune responses
US7807803B2 (en) * 2002-07-03 2010-10-05 Coley Pharmaceutical Group, Inc. Nucleic acid compositions for stimulating immune responses
US7605138B2 (en) * 2002-07-03 2009-10-20 Coley Pharmaceutical Group, Inc. Nucleic acid compositions for stimulating immune responses
JP4557159B2 (ja) * 2004-04-15 2010-10-06 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びこれを用いたパターン形成方法
JP4420226B2 (ja) * 2005-02-18 2010-02-24 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2833827A (en) 1955-01-17 1958-05-06 Bayer Ag Tri (3, 5-di lower alkyl-4-hydroxy phenyl)-sulfonium chlorides and method of preparing same
US3723534A (en) 1971-05-28 1973-03-27 Monsanto Co Aryl methyl phenacyl sulfonium tetrafluoroborates
US4256828A (en) 1975-09-02 1981-03-17 Minnesota Mining And Manufacturing Company Photocopolymerizable compositions based on epoxy and hydroxyl-containing organic materials
JPS6112725A (ja) 1984-06-27 1986-01-21 Toshiba Corp 光重合性エポキシ樹脂組成物
JPS63223002A (ja) 1987-03-13 1988-09-16 Yokohama Rubber Co Ltd:The 重合用触媒
EP0366590B2 (de) * 1988-10-28 2001-03-21 International Business Machines Corporation Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
DE3924299A1 (de) * 1989-07-22 1991-01-31 Basf Ag Neue sulfoniumsalze und deren verwendung
US5220037A (en) 1989-07-22 1993-06-15 Basf Aktiengesellschaft Sulfonium salts and use thereof
US5164278A (en) 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
CA2034400A1 (en) * 1990-04-30 1991-10-31 James Vincent Crivello Method for making triarylsulfonium hexafluorometal or metalloid salts
DE4121199A1 (de) * 1991-06-27 1993-01-07 Basf Ag Positiv arbeitendes strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
EP0523957A1 (de) 1991-07-17 1993-01-20 Japan Synthetic Rubber Co., Ltd. Strahlungsempfindliche Zusammensetzung
US5580695A (en) 1992-02-25 1996-12-03 Japan Synthetic Rubber Co., Ltd. Chemically amplified resist
US5314929A (en) 1992-08-10 1994-05-24 Isp Investments Inc. Rapidly curable vinyl ether release coatings
US5346803A (en) * 1993-09-15 1994-09-13 Shin-Etsu Chemical Co., Ltd. Photoresist composition comprising a copolymer having a di-t-butyl fumarate
DE69508812T2 (de) 1994-01-28 1999-11-04 Shinetsu Chemical Co Sulfoniumsalz und chemisch verstärkte Positivresistzusammensetzungen
JP2964874B2 (ja) 1994-06-10 1999-10-18 信越化学工業株式会社 化学増幅ポジ型レジスト材料
TW397936B (en) * 1994-12-09 2000-07-11 Shinetsu Chemical Co Positive resist comosition based on a silicone polymer containing a photo acid generator
KR19990036901A (ko) * 1997-10-08 1999-05-25 카나가와 치히로 폴리스티렌계 고분자 화합물, 화학증폭 포지티브형 레지스트 재료 및 패턴 형성 방법

Also Published As

Publication number Publication date
US20040076905A1 (en) 2004-04-22
US20030096189A1 (en) 2003-05-22
KR100295602B1 (ko) 2002-01-09
DE69422319D1 (de) 2000-02-03
JPH06287174A (ja) 1994-10-11
US6841334B2 (en) 2005-01-11
EP0615163B1 (de) 1999-12-29
EP0615163A1 (de) 1994-09-14
KR940019678A (ko) 1994-09-14
JP2719748B2 (ja) 1998-02-25

Similar Documents

Publication Publication Date Title
DE69334334D1 (de) Wälzlager mit einer Dichtung mit integriertem Signalgeber
DE69218529T2 (de) Kunststoffplatte mit Graphik
DE68905851T3 (de) Photoempfindliche Einrichtung und Bildsensor mit einer solchen Einrichtung, insbesondere Doppel-Energie-Bildsensor.
DK437889D0 (da) Polyesterfolie med et overtraek paa mindst den ene side
DE69422319T2 (de) Positiv arbeitende Resistmaterialien mit besonderen Oniumsalzen
FI100804B (fi) Vettähylkivän kalvon muodostava koostumus
DE69411600T2 (de) Druckvorrichtung mit Kassette
DE69415190T2 (de) Aufzeichnungsblatt mit einer Farbstoffabsorbierender Schicht
DE69209665T2 (de) Blattwendevorrichtung mit mehreren Ausgaberichtungen
DE69405479T2 (de) Resistmaterialien
DE69313306T2 (de) Dämpfungsplatte mit einer eine geringe reibung aufweisenden oberfläche
DE69107253T2 (de) Geschichtete Stahlblechabdichtung mit einer breiten Abdichtungsfläche.
DE69321274D1 (de) Positiv arbeitende Resistzusammensetzung
DE69213321D1 (de) In einer TE11N-Mode betriebener Linearbeschleuniger
DE69400540D1 (de) Verdrängermaschine mit zyklischer Bewegung
DE69306712T2 (de) Inkrementalgeber mit Fehlererkennung
DE9319273U1 (de) Brunnen mit Wasserfontäne
DE69322160D1 (de) Flexible lithographische Druckplatte mit verbesserter Druckleistung
DE59403665D1 (de) Brennstab mit vorbestimmter bewirkter perforation
DE59403256D1 (de) Druckempfindliches durchschreibepapier mit verbesserter ölsperre
DE69400910D1 (de) Werkzeug versehen mit einer markiervorrichtung
DE69413925T2 (de) Positiv arbeitende Resistzusammensetzung
KR900010201U (ko) 해양 오염 방지막
DE69200982T2 (de) Geruchsstoff mit einer Spiranstruktur.
DK61693D0 (da) Gulvafloeb med en vandlaas

Legal Events

Date Code Title Description
8364 No opposition during term of opposition