KR940011352A - 개선된 특성을 가진 화학 증기 증착- 제조된 실리콘 탄화물 - Google Patents

개선된 특성을 가진 화학 증기 증착- 제조된 실리콘 탄화물 Download PDF

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KR940011352A
KR940011352A KR1019930024883A KR930024883A KR940011352A KR 940011352 A KR940011352 A KR 940011352A KR 1019930024883 A KR1019930024883 A KR 1019930024883A KR 930024883 A KR930024883 A KR 930024883A KR 940011352 A KR940011352 A KR 940011352A
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chemical vapor
attenuation coefficient
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에스. 고에라 지텐드라
이. 번즈 리
엘. 테일러 래이몬드
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제랄드 케이. 화이트
씨 브이 디 인코오포레이티드
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

본 발명은 가시 구간 및 적외선 구간에서 광투과성이 있는 β-실리콘 탄화물을 화학 증기 증착 방법에 의해 제조하는 것에 관한 것이다. 증착 조건은 온도가 1400-1500℃ 범위이고, 압력은 50 토르 또는 그 이하이며, H2/메틸트리클로로실란의 몰비는 4-30이고, 증착 속도는 분당 1㎛ 또는 그 이하이다.

Description

개선된 특성을 가진 화학 증기 증착-제조된 실리콘 탄화물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 광 투과성 β-SiC를 제조하는데 사용된 화학 증기 증착(CVD)장치의 계통도이다.
제2도는 VCD-β-SiC와 α-SiC의 투과도를 비교한 그래프이다.
제3a도, 제3b도 및 제3c도는 CVD-β-SiC를 제조하기 위한 용광로의 증착실내에 사용된 차폐 장치/굴대(mandrel)의 여러 가지 배열을 도시한 것이다.
제4도는 고광투과성 CVD-β-SiC의 투광 스펙트럼이다.

Claims (16)

  1. 0.6328㎛에서 약 20㎝-1또는 그 이하의 감쇠계수를 갖는 비-고정형(free-standing) 화학 증기 증착된 β-SiC.
  2. 제1항에 있어서, 0.6328㎛에서 약 10㎝-1또는 그 이하의 감쇠 계수를 갖는 것을 특징으로 하는 SiC.
  3. 제1항에 있어서, 0.6328㎛에서 약 8㎝-1또는 그 이하의 감쇠 계수를 갖는 것을 특징으로 하는 SiC.
  4. 3㎛에서 약 20㎝-1또는 그 이하의 감쇠 계수를 갖는 비-고정형 화학 증기 증착된 β-SiC.
  5. 제4항에 있어서, 3㎛에서 약 10㎝-1또는 그 이하의 감쇠 계수를 갖는 것을 특징으로 하는 SiC.
  6. 제4항에 있어서, 3㎛에서 약 8㎝-1또는 그 이하의 감쇠 계수를 갖는 것을 특징으로 하는 SiC.
  7. 제4항에 있어서, 3㎛에서 약 5㎝-1또는 그 이하의 감쇠 계수를 갖는 것을 특징으로 하는 SiC.
  8. 화학 증기 증착에 의해 광 투과성 비-고정형 β-SiC를 제조하는 방법으로서, 증착반응실과 그 내부에 SiC가 증착되는 표면을 제공하고, 상기 반응실내의 상기 표면에 실리콘 탄화물이 열분해 증착될 수 있는 조건하에서 메틸트리클로로실란과 H2가스를 도입시키는 단계에 있어서, 상기 조건이 증착실 온도가 약 1400℃ 내지 약 1500℃, 증착실 압력이 약 50토르 또는 그 이하, H2/메틸트리클로로실란의 몰비가 약 4내지 약 30이며 증착 속도가 분당 1㎛ 또는 그 이하인 것을 특징으로 하는 방법.
  9. 제8항에 있어서, 상기 압력이 약 10토르 또는 그 이하인 것을 특징으로 하는 방법.
  10. 제8항에 있어서, 상기 압력이 약 5토르 또는 그 이하인 것을 특징으로 하는 방법.
  11. 제8항에 있어서, 상기 온도가 약 1400℃ 내지 약 1450℃ 범위인 것을 특징으로 하는 방법.
  12. 제8항에 있어서, 상기 H2/메틸트리클로로실란 비율이 약 10 내지 약 20 사이인 것을 특징으로 하는 방법.
  13. 제8항에 있어서, 상기 HCI이 HCl/메틸트리클로로실란 몰비가 약 0.2 이상으로 상기 증착반응실에 공급되는 것을 특징으로 하는 방법.
  14. 약 500 Ω-㎝ 또는 그 이상의 전기저항도를 갖는 비-고정형 화학 증기 증착된 β-SiC.
  15. 제14항에 있어서, 저항도가 약 1000 Ω-㎝ 또는 그 이상인 것을 특징으로 하는 SiC.
  16. 제14항에 있어서, 저항도가 약 10,000 Ω-㎝ 또는 그 이상인 것을 특징으로 하는 SiC.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930024883A 1992-11-23 1993-11-22 개선된 특성을 가진 화학 증기 증착-제조된 실리콘 탄화물 KR970008982B1 (ko)

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IL106864A (en) 1997-04-15
IL106864A0 (en) 1993-12-28
SG48942A1 (en) 1998-05-18
CA2104411A1 (en) 1994-05-24
KR970008982B1 (ko) 1997-06-03
EP0599468A1 (en) 1994-06-01
JPH06239609A (ja) 1994-08-30
MY111078A (en) 1999-08-30
HK1003034A1 (en) 1998-09-30
CA2104411C (en) 1999-01-19
EP0599468B1 (en) 1998-01-07
DE69316172D1 (de) 1998-02-12
TW337513B (en) 1998-08-01
JP2667357B2 (ja) 1997-10-27
DE69316172T2 (de) 1998-04-16
US5604151A (en) 1997-02-18
US5612132A (en) 1997-03-18

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