IL106864A - Chemical vapor deposition- produced silicon carbide having improved properties - Google Patents
Chemical vapor deposition- produced silicon carbide having improved propertiesInfo
- Publication number
- IL106864A IL106864A IL106864A IL10686493A IL106864A IL 106864 A IL106864 A IL 106864A IL 106864 A IL106864 A IL 106864A IL 10686493 A IL10686493 A IL 10686493A IL 106864 A IL106864 A IL 106864A
- Authority
- IL
- Israel
- Prior art keywords
- chemical vapor
- vapor deposition
- silicon carbide
- improved properties
- produced silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/571—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained from Si-containing polymer precursors or organosilicon monomers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Ceramic Products (AREA)
- Producing Shaped Articles From Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97996592A | 1992-11-23 | 1992-11-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
IL106864A0 IL106864A0 (en) | 1993-12-28 |
IL106864A true IL106864A (en) | 1997-04-15 |
Family
ID=25527249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL106864A IL106864A (en) | 1992-11-23 | 1993-09-01 | Chemical vapor deposition- produced silicon carbide having improved properties |
Country Status (11)
Country | Link |
---|---|
US (2) | US5604151A (xx) |
EP (1) | EP0599468B1 (xx) |
JP (1) | JP2667357B2 (xx) |
KR (1) | KR970008982B1 (xx) |
CA (1) | CA2104411C (xx) |
DE (1) | DE69316172T2 (xx) |
HK (1) | HK1003034A1 (xx) |
IL (1) | IL106864A (xx) |
MY (1) | MY111078A (xx) |
SG (1) | SG48942A1 (xx) |
TW (1) | TW337513B (xx) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE9502288D0 (sv) * | 1995-06-26 | 1995-06-26 | Abb Research Ltd | A device and a method for epitaxially growing objects by CVD |
US6030661A (en) * | 1995-08-04 | 2000-02-29 | Abb Research Ltd. | Device and a method for epitaxially growing objects by CVD |
JP2851818B2 (ja) * | 1995-09-08 | 1999-01-27 | 日本ピラー工業株式会社 | 高エネルギビーム用光学要素構成材 |
US5683028A (en) * | 1996-05-03 | 1997-11-04 | Cvd, Incorporated | Bonding of silicon carbide components |
JP3524679B2 (ja) * | 1996-06-21 | 2004-05-10 | 東芝セラミックス株式会社 | 高純度CVD−SiC質の半導体熱処理用部材及びその製造方法 |
US6780464B2 (en) * | 1997-08-11 | 2004-08-24 | Torrex Equipment | Thermal gradient enhanced CVD deposition at low pressure |
JPH1179846A (ja) * | 1997-09-01 | 1999-03-23 | Tokai Carbon Co Ltd | 炭化珪素成形体 |
JP4043003B2 (ja) * | 1998-02-09 | 2008-02-06 | 東海カーボン株式会社 | SiC成形体及びその製造方法 |
FR2786208B1 (fr) | 1998-11-25 | 2001-02-09 | Centre Nat Rech Scient | Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre |
JP2001048649A (ja) * | 1999-07-30 | 2001-02-20 | Asahi Glass Co Ltd | 炭化ケイ素およびその製造方法 |
US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
US6939821B2 (en) * | 2000-02-24 | 2005-09-06 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
US7018947B2 (en) * | 2000-02-24 | 2006-03-28 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
TW464977B (en) * | 2000-11-03 | 2001-11-21 | United Microelectronics Corp | Method for peeling off silicon carbide layer |
EP1205573A1 (en) * | 2000-11-10 | 2002-05-15 | Shipley Company LLC | Silicon carbide with high thermal conductivity |
JP3959952B2 (ja) * | 2000-11-10 | 2007-08-15 | 株式会社デンソー | 炭化珪素単結晶の製造方法及び製造装置 |
JP4000552B2 (ja) * | 2000-12-27 | 2007-10-31 | スズキ株式会社 | 窒化鉄薄膜の製造方法 |
US8202621B2 (en) * | 2001-09-22 | 2012-06-19 | Rohm And Haas Company | Opaque low resistivity silicon carbide |
DE10243022A1 (de) * | 2002-09-17 | 2004-03-25 | Degussa Ag | Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor |
US7704327B2 (en) * | 2002-09-30 | 2010-04-27 | Applied Materials, Inc. | High temperature anneal with improved substrate support |
US7540920B2 (en) | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US20040173597A1 (en) * | 2003-03-03 | 2004-09-09 | Manoj Agrawal | Apparatus for contacting gases at high temperature |
US7147713B2 (en) * | 2003-04-30 | 2006-12-12 | Cree, Inc. | Phase controlled sublimation |
US7247513B2 (en) * | 2003-05-08 | 2007-07-24 | Caracal, Inc. | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
JP4380236B2 (ja) * | 2003-06-23 | 2009-12-09 | 東京エレクトロン株式会社 | 載置台及び熱処理装置 |
US20060008661A1 (en) * | 2003-08-01 | 2006-01-12 | Wijesundara Muthu B | Manufacturable low-temperature silicon carbide deposition technology |
US20050123713A1 (en) * | 2003-12-05 | 2005-06-09 | Forrest David T. | Articles formed by chemical vapor deposition and methods for their manufacture |
US20100297350A1 (en) * | 2003-12-05 | 2010-11-25 | David Thomas Forrest | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
JP5575482B2 (ja) * | 2006-11-22 | 2014-08-20 | ソイテック | 単結晶iii−v族半導体材料のエピタキシャル堆積法、及び堆積システム |
US20100129994A1 (en) * | 2007-02-27 | 2010-05-27 | Yousef Awad | Method for forming a film on a substrate |
CN100577866C (zh) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法 |
US8105649B1 (en) | 2007-08-09 | 2012-01-31 | Imaging Systems Technology | Fabrication of silicon carbide shell |
IL220677A (en) | 2011-06-30 | 2017-02-28 | Rohm & Haas Elect Mat | Transparent conductive items |
CN103038387B (zh) | 2011-08-02 | 2015-05-27 | 新柯隆株式会社 | 碳化硅薄膜的成膜方法 |
CN104619881A (zh) * | 2012-08-17 | 2015-05-13 | 株式会社Ihi | 耐热复合材料的制造方法及制造装置 |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
WO2014148149A1 (ja) * | 2013-03-22 | 2014-09-25 | イビデン株式会社 | ミラーおよびその製造方法 |
JP2015052661A (ja) * | 2013-09-06 | 2015-03-19 | イビデン株式会社 | 反射ミラー |
CN110318037B (zh) * | 2018-03-30 | 2021-06-22 | 揖斐电株式会社 | 透光性SiC的制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL244520A (xx) * | 1958-10-23 | |||
GB1031833A (en) * | 1963-05-15 | 1966-06-02 | Power Jets Res Dev Ltd | Process for treating tungsten |
JPS60145992A (ja) * | 1983-12-29 | 1985-08-01 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
US4608326A (en) * | 1984-02-13 | 1986-08-26 | Hewlett-Packard Company | Silicon carbide film for X-ray masks and vacuum windows |
US5010035A (en) * | 1985-05-23 | 1991-04-23 | The Regents Of The University Of California | Wafer base for silicon carbide semiconductor device |
JPS62129000A (ja) * | 1985-11-27 | 1987-06-11 | Shin Etsu Chem Co Ltd | 炭化けい素ウイスカ−の製造方法 |
US4865659A (en) * | 1986-11-27 | 1989-09-12 | Sharp Kabushiki Kaisha | Heteroepitaxial growth of SiC on Si |
JPS6461307A (en) * | 1987-08-29 | 1989-03-08 | Ibiden Co Ltd | Production of beta-type silicon carbide fine powder |
US4912063A (en) * | 1987-10-26 | 1990-03-27 | North Carolina State University | Growth of beta-sic thin films and semiconductor devices fabricated thereon |
US5082695A (en) * | 1988-03-08 | 1992-01-21 | 501 Fujitsu Limited | Method of fabricating an x-ray exposure mask |
CA2058809A1 (en) * | 1991-01-07 | 1992-07-08 | Jitendra S. Goela | Chemical vapor deposition silicon and silicon carbide having improved optical properties |
JPH051380A (ja) * | 1991-06-24 | 1993-01-08 | Hoya Corp | 炭化ケイ素の成膜方法 |
US5225032A (en) * | 1991-08-09 | 1993-07-06 | Allied-Signal Inc. | Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade |
US5374412A (en) * | 1992-07-31 | 1994-12-20 | Cvd, Inc. | Highly polishable, highly thermally conductive silicon carbide |
-
1993
- 1993-08-17 TW TW082106621A patent/TW337513B/zh active
- 1993-08-19 CA CA002104411A patent/CA2104411C/en not_active Expired - Fee Related
- 1993-09-01 IL IL106864A patent/IL106864A/xx not_active IP Right Cessation
- 1993-10-07 EP EP93307966A patent/EP0599468B1/en not_active Expired - Lifetime
- 1993-10-07 DE DE69316172T patent/DE69316172T2/de not_active Expired - Fee Related
- 1993-10-07 SG SG1996003924A patent/SG48942A1/en unknown
- 1993-11-12 JP JP5283398A patent/JP2667357B2/ja not_active Expired - Fee Related
- 1993-11-22 MY MYPI93002444A patent/MY111078A/en unknown
- 1993-11-22 KR KR1019930024883A patent/KR970008982B1/ko not_active IP Right Cessation
-
1995
- 1995-05-11 US US08/439,034 patent/US5604151A/en not_active Expired - Fee Related
- 1995-05-31 US US08/455,007 patent/US5612132A/en not_active Expired - Lifetime
-
1998
- 1998-03-13 HK HK98102095A patent/HK1003034A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970008982B1 (ko) | 1997-06-03 |
US5604151A (en) | 1997-02-18 |
MY111078A (en) | 1999-08-30 |
TW337513B (en) | 1998-08-01 |
CA2104411C (en) | 1999-01-19 |
CA2104411A1 (en) | 1994-05-24 |
JP2667357B2 (ja) | 1997-10-27 |
US5612132A (en) | 1997-03-18 |
EP0599468A1 (en) | 1994-06-01 |
DE69316172T2 (de) | 1998-04-16 |
HK1003034A1 (en) | 1998-09-30 |
KR940011352A (ko) | 1994-06-21 |
JPH06239609A (ja) | 1994-08-30 |
DE69316172D1 (de) | 1998-02-12 |
EP0599468B1 (en) | 1998-01-07 |
IL106864A0 (en) | 1993-12-28 |
SG48942A1 (en) | 1998-05-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
KB | Patent renewed | ||
MM9K | Patent not in force due to non-payment of renewal fees |