KR940010227A - 처리방법 및 장치 - Google Patents

처리방법 및 장치 Download PDF

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KR940010227A
KR940010227A KR1019930022132A KR930022132A KR940010227A KR 940010227 A KR940010227 A KR 940010227A KR 1019930022132 A KR1019930022132 A KR 1019930022132A KR 930022132 A KR930022132 A KR 930022132A KR 940010227 A KR940010227 A KR 940010227A
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treatment
mounting table
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holding
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하야시 오오쓰키
요이치 데구치
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이노우에 아키라
도오교도 에레구토론 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/136—Associated with semiconductor wafer handling including wafer orienting means
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

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Abstract

피처리체의 표면과 이면을 피처리체의 분위가 상태를 변화시키지 않고, 동일 조건하에서 처리할 수 있는 처리방법 및 장치를 제공하는 것으로, 피처리체를 처리가스 분위기에서 재치대에 설치한 유지기구에 유지하여 처리하는 방법에 있어서, 상기 재치대와 피처리체를 함께 회전기구에 의하여 소정 방향으로 회전시키는 공정과, 상기 재치대의 회전을 정지하여 상기 유지기구를 별도의 회전기구에 의하여 회전시켜서 피처리체의 표면과 이면을 상기 재치대에 대하여 상대적으로 회전시키는 공정으로 한다. 따라서, 피처리체의 표면과 이면을 피처리체의 분위기 상태를 변화시키지 않고, 동일 조건하에서 처리할 수 있다.

Description

처리방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 상기 처리장치가 적용되는 피처리체 처리장치의 전체 배치도,
제2도는 본 발명의 상기 처리장치를 자연 산화막 제거장치에 사용한 실시예의 개략 단면도,
제3도는 제2도에 나타낸 자연 산화막 제거장치에 사용하는 피처리체 유지기구의 부분 개략 단면도,
제4도는 제3도에 나타낸 피처리체 유지기구의 일실시예의 부분개략 사시도,
제5도는 제2도에 나타낸 자연 산화막 제거장치를 성막처리로와 접속한 시스템에 사용한 실시예의 개략 종단 단면도.

Claims (16)

  1. 피처리체를 처리가스 분위기에서 재치대에 설치한 유지기구에 유지하여 처리하는 방법에 있어서, 상기 재치대(4)와 피처리체를 함께 회전기구(8a)에 의하여 소정 방향으로 회전시키는 공정과, 상기 재치대(4)의 회전을 정지하여 상기 유지기구(5)를 별도의 회전기구(8a)에 의하여 회전시켜서 피처리체(W)의 표면과 이면을 상기 재치대(4)에 대하여 상대적으로 회전시키는 공정으로 되는 피처리체의 처리방법.
  2. 제1항에 있어서, 상기 처리가 반도체 웨이퍼(W) 표면의 자연 산화막 제거처리로서, 처리가스로서 불소와 물의 혼합액을 사용하고, 그 공급온도가 25-35℃의 범위로 유지되어 있는 피처리체의 처리방법.
  3. 제1항에 있어서, 상기 처리가스 공급중은, 상기 재치대(4)에 재치한 피처리체(W)를 일정 방향으로 회전시키는 피처리체의 처리방법.
  4. 제1항에 있어서, 상기 처리가 반도체 웨이퍼(W) 표면의 자연 산화막 제거처리로서, 처리가스로서 불소와 물의 혼합액의 중가를 사용하고, 자연 산화막 제거처리 후에 70℃이상의 온수로 오수처리하여 잔류 불소를 상기 반도체 웨이퍼(W)의 표면으로부터 제거하는 피처리체의 처리방법.
  5. 제1항에 있어서, 상기 처리가 상압 또는 감압하에서 이루어지는 피처리체의 처리방법.
  6. 제1항에 있어서, 상기 처리 후에, 성막처리, 에칭처리 또는 애싱처리를 하는 피처리체의 처리방법.
  7. 제1항에 있어서, 상기 처리 후에, 온수처리를 하고, 이어서 성막처리, 에칭처리 또는 애싱처리를 하는 피처리체의 처리방법.
  8. 피처리체를 처리가스 분위기로 처리하는 처리실(2)과, 이 처리실(2)내에 상기 피처리체(W)를 유지하는 유지기구(5)를 설치한 재치대(4)를 구비한 처리장치에 있어서, 상기 재치대(7)를 회전기구(8a)에 접속함과 동시에, 이 재치대에 설치한 유지기구(5)에 별도의 회전기구를 설치하고, 상기 피처리체의 표면과 이면을 상기 재치대에 대하여 상대적으로 회전이 가능하게 한 처리장치.
  9. 제8항에 있어서, 상기 피처리체(W)를 유지하는 유지기구(5)의 유지부가, 상기 피처리체의 표면과 이면을 지지함과 동시에 상기 피처리체의 주변부를 덮도록 면(面)으로 유지하는 유지부를 설치한 처리장치.
  10. 제8항에 있어서, 상기 피처리체를 유지하는 유지기구(5)의 유지부(6)가, 상기 피처리체(W)의 표면과 이면을 지지함과 동시에 상기 피처리체(W)의 주변부를 적어도 2점 이상의 점(6a)으로 유지하는 유지부(6)를 설치한 처리장치.
  11. 제8항에 있어서, 상기 처리장치가, 처리가스로서 불소와 물의 혼합액의 증기를 사용한 피처리체(W)의 자연 산화막 제거장치로서, 처리후의 잔류 불소를 피처리체(W)의 표면으로부터 제거하기 위한 70℃이상의 온도로 제어된 온수로 피처리체(W)를 침지하는 온수처리탱크(107)를 인접하여 배설한 처리장치.
  12. 제8항에 있어서, 상기 처리장치가, 처리가스로서 불소와 물의 혼합액의 증기를 사용한 피처리체(W)의 자연 산화막 제거장치로서, 이 증기를 N2를 캐리어 가스로서 상기 처리실(2)에 공급하도록 한 처리장치.
  13. 제8항에 있어서, 상기 처리가스가, 처리가스로서 불소와 물의 혼합액의 증기를 사용한 피처리체(W)의 자연 산화막 제거장치로서, 상기 혼합액을 탱크내에 저유(貯留)하고, 펌프에 의하여 순환시키도록 한 처리장치.
  14. 피처리체를 처리가스 분위기로 처리하는 처리실과, 이 처리실 내에 상기 피처리체를 유지하는 유지기구를 설치한 재치대를 구비한 처리장치에 있어서, 상기 피처리체(W)의 상면에 산성의 용액을 공급하는 공급관(31)과, 상기 재치대(4)를 회전기구(8a)에 접속함과 동시에, 이 재치대(4)에 설치한 유지기구(5)에 별도의 회전기구를 설치하고, 상기 피처리체(W)의 표면과 이면을 상기 재치대(4)에 대하여 상대적으로 회전이 가능하게 한 처리장치.
  15. 제14항에 있어서, 상기 피처리체(W)의 상면에 산성의 용액을 공급하는 공급관(107)에, 상기 피처리체(W)의 중심위치와 상기 피처리체(W)의 상부로부터 후퇴할 수 있는 위치 사이의 이동을 가능하게 하는 이동수단을 설치한 처리장치.
  16. 제14항에 있어서, 상기 용액이 초산용액(40)인 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930022132A 1992-10-23 1993-10-23 처리방법 및 장치 KR100250009B1 (ko)

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JP30941292A JP3005373B2 (ja) 1992-10-23 1992-10-23 処理装置
JP92-309412 1992-10-23

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KR100250009B1 KR100250009B1 (ko) 2000-03-15

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4408947C2 (de) * 1994-03-16 1997-03-13 Balzers Hochvakuum Vakuumbehandlungsanlage
TW338174B (en) * 1995-01-06 1998-08-11 Tokyo Electron Co Ltd Apparatus for supplying a treatment material
JPH0983061A (ja) * 1995-09-08 1997-03-28 Sharp Corp 半導体レーザ素子の製造方法および半導体レーザ素子製造装置
US6169067B1 (en) * 1995-10-13 2001-01-02 The Procter & Gamble Company Dryer-activated fabric conditioning compositions with improved stability containing sugar derivatives
US5898588A (en) * 1995-10-27 1999-04-27 Dainippon Screen Mfg. Co. Method and apparatus for controlling substrate processing apparatus
US6350319B1 (en) * 1998-03-13 2002-02-26 Semitool, Inc. Micro-environment reactor for processing a workpiece
US5836575A (en) * 1996-10-30 1998-11-17 Micron Electronics, Inc. Wafer manual handpick station
US6257827B1 (en) * 1997-12-01 2001-07-10 Brooks Automation Inc. Apparatus and method for transporting substrates
JP2000133736A (ja) * 1998-10-26 2000-05-12 Furukawa Electric Co Ltd:The 半導体レーザ素子の気密封止方法及び気密封止装置
US6090444A (en) * 1999-02-08 2000-07-18 Saunders & Associates, Inc. Base plater or vacuum deposition apparatus with individually and selectively controlled work holders and capacitively coupled crystal monitor
US6467827B1 (en) 1999-10-30 2002-10-22 Frank J. Ardezzone IC wafer handling apparatus incorporating edge-gripping and pressure or vacuum driven end-effectors
US6780250B2 (en) * 2000-01-28 2004-08-24 Texas Instruments Incorporated System and method for integrated oxide removal and processing of a semiconductor wafer
JP2002217095A (ja) * 2000-11-14 2002-08-02 Canon Inc 露光装置、半導体デバイス製造方法、半導体製造工場及び露光装置の保守方法並びに位置検出装置
US20020137346A1 (en) * 2001-03-12 2002-09-26 Applied Materials. Inc. Workpiece distribution and processing in a high throughput stacked frame
JP3888608B2 (ja) * 2001-04-25 2007-03-07 東京エレクトロン株式会社 基板両面処理装置
US6778258B2 (en) * 2001-10-19 2004-08-17 Asml Holding N.V. Wafer handling system for use in lithography patterning
JP3686866B2 (ja) * 2001-12-18 2005-08-24 株式会社日立製作所 半導体製造装置及び製造方法
JP2005167083A (ja) * 2003-12-04 2005-06-23 Daifuku Co Ltd ガラス基板用の搬送設備
JP4467367B2 (ja) * 2004-06-22 2010-05-26 大日本スクリーン製造株式会社 基板反転装置、基板搬送装置、基板処理装置、基板反転方法、基板搬送方法および基板処理方法
US20050284572A1 (en) * 2004-06-29 2005-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Heating system for load-lock chamber
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
JP4886565B2 (ja) * 2007-03-26 2012-02-29 住友精密工業株式会社 基板処理装置
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
US7981763B1 (en) 2008-08-15 2011-07-19 Novellus Systems, Inc. Atomic layer removal for high aspect ratio gapfill
JP5179295B2 (ja) * 2008-08-27 2013-04-10 株式会社パイオラックス 温度センサの取付装置
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
EP2418545B1 (en) 2010-08-12 2018-10-10 Applied Materials, Inc. Mask handling module
JP5877016B2 (ja) * 2011-08-26 2016-03-02 株式会社Ｓｃｒｅｅｎホールディングス 基板反転装置および基板処理装置
EP2764536A1 (de) * 2011-10-06 2014-08-13 Roth & Rau AG Substratwendeeinrichtung
US9357686B2 (en) * 2013-11-14 2016-05-31 Illinois Tool Works Inc. Dispensing apparatus having substrate inverter system and clamping system, and method for dispensing a viscous material on a substrate
US9662675B2 (en) 2014-07-31 2017-05-30 Illinois Tool Works Inc. External inverter system for variable substrate thickness and method for rotating a substrate
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
CN105137660A (zh) * 2015-09-25 2015-12-09 京东方科技集团股份有限公司 一种光配向膜杂质去除装置和方法
JP6604890B2 (ja) * 2016-04-04 2019-11-13 株式会社荏原製作所 基板搬送装置および基板処理装置ならびに結露抑制方法
WO2019226341A1 (en) 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
JP7461923B2 (ja) 2018-07-09 2024-04-04 ラム リサーチ コーポレーション 電子励起原子層エッチング
JP7342719B2 (ja) * 2020-01-28 2023-09-12 住友金属鉱山株式会社 成膜装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH668430A5 (de) * 1986-07-31 1988-12-30 Satis Vacuum Ag Vakuum-beschichtungsanlage fuer optische substrate.
US5200017A (en) * 1989-02-27 1993-04-06 Hitachi, Ltd. Sample processing method and apparatus
US5174855A (en) * 1989-04-28 1992-12-29 Dainippon Screen Mfg. Co. Ltd. Surface treating apparatus and method using vapor
EP0408216A3 (en) * 1989-07-11 1991-09-18 Hitachi, Ltd. Method for processing wafers and producing semiconductor devices and apparatus for producing the same
JPH0810686B2 (ja) * 1990-09-14 1996-01-31 株式会社東芝 半導体基板エッチング処理装置
US5227001A (en) * 1990-10-19 1993-07-13 Integrated Process Equipment Corporation Integrated dry-wet semiconductor layer removal apparatus and method
JP2583152B2 (ja) * 1990-11-06 1997-02-19 大日本スクリーン製造株式会社 基板回転式表面処理方法
JP3351802B2 (ja) * 1991-01-01 2002-12-03 忠弘 大見 薄膜形成装置
US5171393A (en) * 1991-07-29 1992-12-15 Moffat William A Wafer processing apparatus
JP2896268B2 (ja) * 1992-05-22 1999-05-31 三菱電機株式会社 半導体基板の表面処理装置及びその制御方法
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer

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