KR940005802B1 - Cmos 반도체장치 및 그 제조방법 - Google Patents

Cmos 반도체장치 및 그 제조방법 Download PDF

Info

Publication number
KR940005802B1
KR940005802B1 KR1019910011609A KR910011609A KR940005802B1 KR 940005802 B1 KR940005802 B1 KR 940005802B1 KR 1019910011609 A KR1019910011609 A KR 1019910011609A KR 910011609 A KR910011609 A KR 910011609A KR 940005802 B1 KR940005802 B1 KR 940005802B1
Authority
KR
South Korea
Prior art keywords
gate
side wall
transistors
mos
impurity region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910011609A
Other languages
English (en)
Korean (ko)
Inventor
김경태
최도찬
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019910011609A priority Critical patent/KR940005802B1/ko
Priority to GB9117254A priority patent/GB2257563B/en
Priority to DE4126747A priority patent/DE4126747A1/de
Priority to US07/753,058 priority patent/US5291052A/en
Priority to JP3263262A priority patent/JPH06342884A/ja
Application granted granted Critical
Publication of KR940005802B1 publication Critical patent/KR940005802B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0184—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019910011609A 1991-07-09 1991-07-09 Cmos 반도체장치 및 그 제조방법 Expired - Fee Related KR940005802B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910011609A KR940005802B1 (ko) 1991-07-09 1991-07-09 Cmos 반도체장치 및 그 제조방법
GB9117254A GB2257563B (en) 1991-07-09 1991-08-09 A cmos semiconductor device and manufacturing method therefor
DE4126747A DE4126747A1 (de) 1991-07-09 1991-08-13 Mos-halbleiterbauelement und verfahren zu seiner herstellung
US07/753,058 US5291052A (en) 1991-07-09 1991-08-30 CMOS semiconductor device with (LDD) NMOS and single drain PMOS
JP3263262A JPH06342884A (ja) 1991-07-09 1991-09-13 Ｍｏｓ半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910011609A KR940005802B1 (ko) 1991-07-09 1991-07-09 Cmos 반도체장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR940005802B1 true KR940005802B1 (ko) 1994-06-23

Family

ID=19316971

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910011609A Expired - Fee Related KR940005802B1 (ko) 1991-07-09 1991-07-09 Cmos 반도체장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US5291052A (enExample)
JP (1) JPH06342884A (enExample)
KR (1) KR940005802B1 (enExample)
DE (1) DE4126747A1 (enExample)
GB (1) GB2257563B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950000141B1 (ko) * 1990-04-03 1995-01-10 미쓰비시 뎅끼 가부시끼가이샤 반도체 장치 및 그 제조방법
US5786247A (en) * 1994-05-06 1998-07-28 Vlsi Technology, Inc. Low voltage CMOS process with individually adjustable LDD spacers
JP3256084B2 (ja) 1994-05-26 2002-02-12 株式会社半導体エネルギー研究所 半導体集積回路およびその作製方法
US5969388A (en) * 1995-11-21 1999-10-19 Citizen Watch Co., Ltd. Mos device and method of fabricating the same
KR100214468B1 (ko) * 1995-12-29 1999-08-02 구본준 씨모스 소자 제조방법
JP3405631B2 (ja) * 1996-02-28 2003-05-12 互応化学工業株式会社 エポキシ樹脂組成物及びフォトソルダーレジストインク並びにプリント配線板及びその製造方法
JP2924763B2 (ja) 1996-02-28 1999-07-26 日本電気株式会社 半導体装置の製造方法
US6197627B1 (en) 1996-11-19 2001-03-06 Citizen Watch Co., Ltd. MOS device and method of fabricating the same
JP2982895B2 (ja) * 1997-02-06 1999-11-29 日本電気株式会社 Ｃｍｏｓ半導体装置およびその製造方法
JPH10256549A (ja) * 1997-03-14 1998-09-25 Nec Corp 半導体装置及びその製造方法
JP3123465B2 (ja) * 1997-06-09 2001-01-09 日本電気株式会社 Ｍｉｓトランジスタの製造方法
US6221709B1 (en) * 1997-06-30 2001-04-24 Stmicroelectronics, Inc. Method of fabricating a CMOS integrated circuit device with LDD N-channel transistor and non-LDD P-channel transistor
KR100269510B1 (ko) * 1998-05-20 2000-10-16 윤종용 반도체 장치의 제조 방법
JP2000196071A (ja) * 1998-12-25 2000-07-14 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP3530410B2 (ja) * 1999-02-09 2004-05-24 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP3530466B2 (ja) * 2000-07-17 2004-05-24 Ｎｅｃエレクトロニクス株式会社 固体撮像装置
JP2002231821A (ja) * 2001-01-31 2002-08-16 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
US7115462B1 (en) * 2001-11-28 2006-10-03 Cypress Semiconductor Corp. Processes providing high and low threshold p-type and n-type transistors
US6882013B2 (en) * 2002-01-31 2005-04-19 Texas Instruments Incorporated Transistor with reduced short channel effects and method
US7416927B2 (en) * 2002-03-26 2008-08-26 Infineon Technologies Ag Method for producing an SOI field effect transistor
DE10221884A1 (de) * 2002-05-16 2003-11-27 Infineon Technologies Ag Verfahren zum Herstellen einer Schicht-Anordnung, Schicht-Anordnung und Speicher-Anordnung
US6911695B2 (en) * 2002-09-19 2005-06-28 Intel Corporation Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain
US6806584B2 (en) * 2002-10-21 2004-10-19 International Business Machines Corporation Semiconductor device structure including multiple fets having different spacer widths
US6864135B2 (en) * 2002-10-31 2005-03-08 Freescale Semiconductor, Inc. Semiconductor fabrication process using transistor spacers of differing widths
DE10300687A1 (de) 2003-01-10 2004-07-22 Infineon Technologies Ag Integrierte Halbleiterschaltung insbesondere Halbleiterspeicherschaltung und Herstellungsverfahren dafür
US7279746B2 (en) * 2003-06-30 2007-10-09 International Business Machines Corporation High performance CMOS device structures and method of manufacture
US6905923B1 (en) * 2003-07-15 2005-06-14 Advanced Micro Devices, Inc. Offset spacer process for forming N-type transistors
JP4796747B2 (ja) * 2003-12-25 2011-10-19 富士通セミコンダクター株式会社 Ｃｍｏｓ半導体装置の製造方法
US7033879B2 (en) * 2004-04-29 2006-04-25 Texas Instruments Incorporated Semiconductor device having optimized shallow junction geometries and method for fabrication thereof
US7223647B2 (en) * 2004-11-05 2007-05-29 Taiwan Semiconductor Manufacturing Company Method for forming integrated advanced semiconductor device using sacrificial stress layer
KR100585180B1 (ko) * 2005-02-21 2006-05-30 삼성전자주식회사 동작 전류가 개선된 반도체 메모리 소자 및 그 제조방법
JP4460552B2 (ja) * 2006-07-04 2010-05-12 シャープ株式会社 半導体記憶装置
CN105633154B (zh) * 2014-11-26 2020-04-21 中芯国际集成电路制造(上海)有限公司 晶体管及其形成方法
KR102394938B1 (ko) 2015-05-21 2022-05-09 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조 방법
JP2019029448A (ja) * 2017-07-27 2019-02-21 キヤノン株式会社 撮像装置、カメラおよび撮像装置の製造方法
CN109494191A (zh) * 2018-11-19 2019-03-19 武汉新芯集成电路制造有限公司 半导体器件及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE244607C (enExample) *
DE401113C (de) * 1923-04-22 1924-08-26 Fritz Schuster Heizbare Form zum Appretieren von Kleidungsstuecken
US4295897B1 (en) * 1979-10-03 1997-09-09 Texas Instruments Inc Method of making cmos integrated circuit device
US4474624A (en) * 1982-07-12 1984-10-02 Intel Corporation Process for forming self-aligned complementary source/drain regions for MOS transistors
US4470852A (en) * 1982-09-03 1984-09-11 Ncr Corporation Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions
US4577391A (en) * 1984-07-27 1986-03-25 Monolithic Memories, Inc. Method of manufacturing CMOS devices
JPS61105862A (ja) * 1984-10-30 1986-05-23 Toshiba Corp 半導体装置
US4760033A (en) * 1986-04-08 1988-07-26 Siemens Aktiengesellschaft Method for the manufacture of complementary MOS field effect transistors in VLSI technology
JP2559397B2 (ja) * 1987-03-16 1996-12-04 株式会社日立製作所 半導体集積回路装置及びその製造方法
US5024960A (en) * 1987-06-16 1991-06-18 Texas Instruments Incorporated Dual LDD submicron CMOS process for making low and high voltage transistors with common gate
JPS6484659A (en) * 1987-09-28 1989-03-29 Toshiba Corp Manufacture of semiconductor device
JPH01283956A (ja) * 1988-05-11 1989-11-15 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH0821687B2 (ja) * 1989-05-31 1996-03-04 富士通株式会社 半導体装置及びその製造方法
US5021354A (en) * 1989-12-04 1991-06-04 Motorola, Inc. Process for manufacturing a semiconductor device
KR950000141B1 (ko) * 1990-04-03 1995-01-10 미쓰비시 뎅끼 가부시끼가이샤 반도체 장치 및 그 제조방법
US5023190A (en) * 1990-08-03 1991-06-11 Micron Technology, Inc. CMOS processes

Also Published As

Publication number Publication date
DE4126747C2 (enExample) 1993-05-06
DE4126747A1 (de) 1993-01-21
GB2257563A (en) 1993-01-13
JPH06342884A (ja) 1994-12-13
GB2257563B (en) 1995-06-28
US5291052A (en) 1994-03-01
GB9117254D0 (en) 1991-09-25

Similar Documents

Publication Publication Date Title
KR940005802B1 (ko) Cmos 반도체장치 및 그 제조방법
US6207519B1 (en) Method of making semiconductor device having double spacer
KR930010124B1 (ko) 반도체 트랜지스터의 제조방법 및 그 구조
US4835112A (en) CMOS salicide process using germanium implantation
US5770508A (en) Method of forming lightly doped drains in metalic oxide semiconductor components
KR100226758B1 (ko) 씨모스펫 제조방법
US6355955B1 (en) Transistor and a method for forming the transistor with elevated and/or relatively shallow source/drain regions to achieve enhanced gate electrode formation
EP0164449B1 (en) Process for producing a semiconductor integrated circuit device including a misfet
US5654569A (en) Retarded double diffused drain device structure
US6297098B1 (en) Tilt-angle ion implant to improve junction breakdown in flash memory application
JPH09181307A (ja) 半導体装置及びその製造方法
US20040041170A1 (en) Low dose super deep source/drain implant
US6258646B1 (en) CMOS integrated circuit and method for implanting NMOS transistor areas prior to implanting PMOS transistor areas to optimize the thermal diffusivity thereof
US6261885B1 (en) Method for forming integrated circuit gate conductors from dual layers of polysilicon
KR100427959B1 (ko) 반도체디바이스및그제조방법
US5874343A (en) CMOS integrated circuit and method for forming source/drain areas prior to forming lightly doped drains to optimize the thermal diffusivity thereof
KR100574172B1 (ko) 반도체 소자의 제조방법
US6380021B1 (en) Ultra-shallow junction formation by novel process sequence for PMOSFET
US6025238A (en) Semiconductor device having an nitrogen-rich punchthrough region and fabrication thereof
JP3423081B2 (ja) 半導体装置の製造方法
KR0167606B1 (ko) 모스 트랜지스터 제조방법
KR100376295B1 (ko) 반도체장치 및 그 제조방법
KR940010543B1 (ko) 모스 트랜지스터의 제조방법
KR100505618B1 (ko) 고성능 모스 트랜지스터 및 그 제조방법
US6369434B1 (en) Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

FPAY Annual fee payment

Payment date: 20100528

Year of fee payment: 17

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20110624

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20110624

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000