KR940004877A - 광원 - Google Patents

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KR940004877A
KR940004877A KR1019930016146A KR930016146A KR940004877A KR 940004877 A KR940004877 A KR 940004877A KR 1019930016146 A KR1019930016146 A KR 1019930016146A KR 930016146 A KR930016146 A KR 930016146A KR 940004877 A KR940004877 A KR 940004877A
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light emitting
emitting diode
layer
substrate
type material
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KR1019930016146A
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KR100297453B1 (ko
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하라 쉐인
제이. 스미스 트레브
유에빙 존
화자르도 토마스
디.크레저 제리
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쟈크 에이치. 우
휴렛트 팩카드 캄파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
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    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
    • Y10T156/1702—For plural parts or plural areas of single part
    • Y10T156/1744—Means bringing discrete articles into assembled relationship
    • Y10T156/1768—Means simultaneously conveying plural articles from a single source and serially presenting them to an assembly station
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53191—Means to apply vacuum directly to position or hold work part
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53261—Means to align and advance work part

Abstract

발광 다이오드는 금속화된 두개의 단부면(end face)을 가지며, 광 방출 접착(light emitting junction)이 기판에 수직되게 상기 기판상에 설치된다. 전기 전도성 단부들은 땜납(solder)또는 전도성 접착제에 의해 기판상의 전도성 영역에 전기적으로 결합된다. LED다이(die)들은 나이프 에지(knife edge)주변을 둘러싸는 테이프에 상기 다이들을 일시적으로 부착시킴으로써 기판위에 배치될 수 있다. 다이들은 테이프가 에지 주변을 둘러 쌀때 경사지게 배열되며, 이동가능 핑거(movable finger)에 일시적으로 지지되는 진공 콜릿(vacuum collect)에 의해 한번에 하나씩 테이프로부터 분리되어 기판으로 옮겨진다. 에지 주변의 다이들을 경사지게 하지 않고 동일한 방법으로 반도체 다이들을 기판위에 배치할 수 있다. 또 다른 실시예에서, LED들의 어레이는 금속화 플라스틱 테이프(metallized plastic tape)를 통해 윈도우내에서 조립될 수 있는데, 상기 플라스틱 테이프는 부가적인 금속화 리드(metallized lead)들을 갖는 기본 구조물(foundation)에 감겨져 있다.

Description

광원
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전도성 접착제로 된 임의의 층을 갖는 전형적인 LED의 투시도,
제2도는 램프에 설치된 LED의 평면도,
제3도는 제2도에 도시된 장치의 수직 단면도.

Claims (14)

  1. 기판과, 상기 기판에 수직이고, 상기 기판에 수직인 광 방출 접합을 가지며, 각 단부에서 전기 전도성 층을 갖는 발광 다이오드와, 상기 기판에 수직인 접합을 가지며, 상기 기판상의 전도성 영역과 전기적으로 접촉하는 전기전도성 층을 갖는 발광 다이오드를 상기 기판위에 설치하는 수단을 포함하고, 상기 발광 다이오드의 단부상에 있는 적어도 하나의 금속층은 단부면을 통해 광을 방출하도록 상기 발광 다이오드의 전 단부를 피복하지는 않는 광원.
  2. 제1항에 있어서, 상기 발광 다이오드는, p-형 재료로 된 층과, 상기 P-형 재료에 인접해 있으며, 상기 P-형 재료와 n-형 재료사이에 광 방출 접합을 형성하는 n-형 재료로 된 층을 포함하고, 상기 전기 전도성층은, 상기 접합으로부터 상기 n-형 재료로 된 반대면상의 금속으로 된 층과, 상기 접합으로부터 상기 p-형 재료로 된 반대면상의 금속으로 된 층을 포함하며, 상기 설치수단은 각 금속으로 된 층 및 기판위의 인접한 전도성 영역에 접착되는 전기전도성 재료를 포함하는 광원.
  3. 제1항에 있어서, 상기 금속층은 상기 발광 다이오드의 측면에 인접한 에지를 가지며, 상기 발광 다이오드의 단부상에 금속 패드를 포함하는 광원.
  4. 제3항에 있어서, 상기 금속 패드는 상기 발광 다이오드의 양측면 사이에 늘여져 있으며 상기 기판에 수직인 띠(stripe)를 갖는 광원.
  5. 제1항에 있어서, 상기 기판은 발광다이오드와 외부 회로 사이의 전기적 접속을 위해 다수의 전도성 영역, 상기 전도성 영역중 적어도 일부를 피복하는 절연층 및 전기 접촉을 위해 상기 발광 다이오드의 각 단부에 대해 상기 절연층을 통해 인접해 있는 홀(hole)을 포함하는 광원.
  6. 제5항에 있어서, 상기 홀은 상기 전 발광 다이오드와 전도성 영역들 사이에 걸친 상기 발광 다이오드의 중앙 부분을 수용하기에 충분한 크기를 갖는 광원.
  7. 제5항에 있어서, 상기 발광 다이오드의 상기 중앙부분은 상기 절연층의 일부분에 겹쳐지며, 각각의 상기 전도성 층은 상기 절연층을 통해 상기 홀에 겹쳐지는 광원.
  8. 제1항에 있어서, 상기 접합에 평행한 상기 발광 다이오드의 폭이 상기 접합에 수직인 상기 발광 다이오드의 높이 보다 작은 광원.
  9. 제1항에 있어서, 상기 발광 다이오드의 한 단부와 상기 금속층 사이의 반사를 위한 비전도성 층 및 상기 금속 층과 상기 발광 다이오드 사이의 전기적 접촉을 위한 상기 비전도성 층을 통해 적어도 하나의 홀을 더 포함하는 광원.
  10. 기판과, 상기 기판위에 설치된 발광 다이오드를 포함하는 광원으로서, 상기 발광다이오드는, n-형 재료로 된 층과, 상기 P-형 재료에 인접해 있으며, 상기 P-형 재료에 인접해 있으며, 상기 p-형 재료와 n-형 재료사이에 광 방출 접합을 형성하는 상기 n-형 재료로 된 층과, 상기 접합으로부터 n-형 재료로된 반대측 면상의 전도성 재료로된 층과, 상기 접합으로부터 P-형 재료로 된 반대측 면상의 전도성 재료로 된 층과, 접합이 기판에 수직인 상기 기판위의 발광 다이오드와 상기 기판위의 전도성 영역과 전기적으로 접촉하는 전기 전도성 층을 설치하는 수단을 포함하고, 상기 발광 다이오드의 한 단부상의 적어도 하나의 금속층이 단부면을 통해 광을 방출하도록 상기 발광 다이오드의 전 단부를 피복하지는 않는 광원.
  11. 제10항에 있어서, 상기 금속층은 상기 기판에 인접해 있는 상기 발광 다이오드의 측면에 인접한 에지를 가지며, 상기 발광 다이오드의 한 단부상에 금속 패드를 포함하는 광원.
  12. 제11항에 있어서, 상기 금속 패드는 상기 발광 다이오드의 양측면 사이에 겹쳐지며 상기 기판에 수직인 띠를 포함하는 광원.
  13. p-형 재료로된 층과, 상기 P-형 재료에 인접해 있으며, 상기 P-형 재료와 n-형 재료사이에 광 방출 접합을 형성하는 상기 n-형 재료로 된 층과, 상기 접합으로부터 반대측면의 상기 n-형 재료위에 배치되는 금속으로 된 층과, 상기 접합으로부터 반대측면의 상기 P-형 재료위에 배치되는 금속으로 된 층과, 각각의 상기 금속층의 외부면위에 가열가능 전도성 재료로 된 층을 포함하는 광원.
  14. 제13항에 있어서, 상기 가열가능 전도성 층이 땜납을 포함하는 광원.
KR1019930016146A 1992-08-20 1993-08-19 발광접합부를기판에수직으로실장한발광다이오드를갖는광원 KR100297453B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US932,754 1992-08-20
US07/932,754 US5265792A (en) 1992-08-20 1992-08-20 Light source and technique for mounting light emitting diodes

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KR940004877A true KR940004877A (ko) 1994-03-16
KR100297453B1 KR100297453B1 (ko) 2001-10-24

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US (2) US5265792A (ko)
EP (3) EP0843365B1 (ko)
JP (1) JP3345124B2 (ko)
KR (1) KR100297453B1 (ko)
CN (1) CN1050936C (ko)
DE (3) DE69329522T2 (ko)
TW (1) TW243557B (ko)

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Publication number Priority date Publication date Assignee Title
US6590502B1 (en) 1992-10-12 2003-07-08 911Ep, Inc. Led warning signal light and movable support
US5632631A (en) * 1994-06-07 1997-05-27 Tessera, Inc. Microelectronic contacts with asperities and methods of making same
US5615824A (en) * 1994-06-07 1997-04-01 Tessera, Inc. Soldering with resilient contacts
DE19549726B4 (de) * 1994-12-06 2010-04-22 Sharp K.K. Lichtemittierendes Bauelement und Herstellverfahren für dieses
JP3127195B2 (ja) * 1994-12-06 2001-01-22 シャープ株式会社 発光デバイスおよびその製造方法
WO1997001190A1 (fr) * 1995-06-21 1997-01-09 Rohm Co., Ltd. Puce a diode electroluminescente et diode electroluminescente l'utilisant
US6875620B1 (en) 1996-10-31 2005-04-05 Agilent Technologies, Inc. Tiling process for constructing a chemical array
US6073800A (en) 1996-11-15 2000-06-13 Taiyo Yuden Co., Ltd. Chip component feeding apparatus and attracting plate for use in same
JPH10150223A (ja) * 1996-11-15 1998-06-02 Rohm Co Ltd チップ型発光素子
US5833903A (en) * 1996-12-10 1998-11-10 Great American Gumball Corporation Injection molding encapsulation for an electronic device directly onto a substrate
JP3337405B2 (ja) * 1996-12-27 2002-10-21 シャープ株式会社 発光表示素子およびその電気配線基板への接続方法ならびに製造方法
US5812272A (en) * 1997-01-30 1998-09-22 Hewlett-Packard Company Apparatus and method with tiled light source array for integrated assay sensing
US6087680A (en) * 1997-01-31 2000-07-11 Siemens Aktiengesellschaft Led device
US6093940A (en) * 1997-04-14 2000-07-25 Rohm Co., Ltd. Light-emitting diode chip component and a light-emitting device
US6031958A (en) * 1997-05-21 2000-02-29 Mcgaffigan; Thomas H. Optical light pipes with laser light appearance
WO1999005728A1 (en) 1997-07-25 1999-02-04 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6081243A (en) * 1997-09-09 2000-06-27 Micron Technology, Inc. Methods of forming conductive lines, methods of forming antennas, methods of forming wireless communication devices, conductive lines, antennas, and wireless communications devices
GB2329756A (en) 1997-09-25 1999-03-31 Univ Bristol Assemblies of light emitting diodes
GB2330679B (en) 1997-10-21 2002-04-24 911 Emergency Products Inc Warning signal light
US6200134B1 (en) 1998-01-20 2001-03-13 Kerr Corporation Apparatus and method for curing materials with radiation
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP4061005B2 (ja) 1999-03-31 2008-03-12 シャープ株式会社 発光ダイオードおよびその製造方法並びに発光ダイオードの電気配線基板への搭載方法
US6462669B1 (en) 1999-04-06 2002-10-08 E. P . Survivors Llc Replaceable LED modules
US6380865B1 (en) 1999-04-06 2002-04-30 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6614359B2 (en) 1999-04-06 2003-09-02 911 Emergency Products, Inc. Replacement led lamp assembly and modulated power intensity for light source
US6700502B1 (en) 1999-06-08 2004-03-02 911Ep, Inc. Strip LED light assembly for motor vehicle
US6705745B1 (en) 1999-06-08 2004-03-16 911Ep, Inc. Rotational led reflector
WO2000074975A1 (en) 1999-06-08 2000-12-14 911 Emergency Products, Inc. Strip led light assembly for motor vehicle
US6547410B1 (en) 2000-07-28 2003-04-15 911 Emergency Products, Inc. LED alley/take-down light
US6367949B1 (en) 1999-08-04 2002-04-09 911 Emergency Products, Inc. Par 36 LED utility lamp
DE19945131A1 (de) * 1999-09-21 2001-04-12 Osram Opto Semiconductors Gmbh Elektronisches Bauelement und Beschichtungs-Mittel
US6885035B2 (en) * 1999-12-22 2005-04-26 Lumileds Lighting U.S., Llc Multi-chip semiconductor LED assembly
DE10164879B4 (de) * 2000-03-02 2006-06-08 Murata Manufacturing Co., Ltd., Nagaokakyo Verdrahtungssubstrat
JP2001320168A (ja) * 2000-03-02 2001-11-16 Murata Mfg Co Ltd 配線基板およびその製造方法、ならびにそれを用いた電子装置
US7320593B2 (en) 2000-03-08 2008-01-22 Tir Systems Ltd. Light emitting diode light source for curing dental composites
JP2001345485A (ja) * 2000-06-02 2001-12-14 Toyoda Gosei Co Ltd 発光装置
US6590343B2 (en) 2000-06-06 2003-07-08 911Ep, Inc. LED compensation circuit
CA2417172C (en) * 2000-07-07 2010-10-12 Cosmo Plant Co., Ltd. Plant cultivating method, cultivating device, and its lighting device
AT413062B (de) * 2000-07-12 2005-10-15 Tridonic Optoelectronics Gmbh Verfahren zur herstellung einer led-lichtquelle
DE10041328B4 (de) 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
US8188878B2 (en) 2000-11-15 2012-05-29 Federal Law Enforcement Development Services, Inc. LED light communication system
US6879263B2 (en) 2000-11-15 2005-04-12 Federal Law Enforcement, Inc. LED warning light and communication system
US7439847B2 (en) 2002-08-23 2008-10-21 John C. Pederson Intelligent observation and identification database system
JP2002222992A (ja) * 2001-01-25 2002-08-09 Rohm Co Ltd Ｌｅｄ発光素子、およびｌｅｄ発光装置
TW575652B (en) * 2001-03-07 2004-02-11 Matsushita Electric Ind Co Ltd Light-emitting device
US6576488B2 (en) * 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
US6747298B2 (en) 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) * 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
JP2003309292A (ja) * 2002-04-15 2003-10-31 Citizen Electronics Co Ltd 表面実装型発光ダイオードのメタルコア基板及びその製造方法
US7043881B2 (en) * 2002-06-14 2006-05-16 Tem-Pace, Inc. Insulated glass assembly with an internal lighting system
DE10228446A1 (de) * 2002-06-26 2004-01-15 Hella Kg Hueck & Co. Anordnung mit elektrischen Bauteilen
CA2493130A1 (en) 2002-07-25 2004-02-05 Jonathan S. Dahm Method and apparatus for using light emitting diodes for curing
US7182597B2 (en) * 2002-08-08 2007-02-27 Kerr Corporation Curing light instrument
WO2004038759A2 (en) * 2002-08-23 2004-05-06 Dahm Jonathan S Method and apparatus for using light emitting diodes
JP4080843B2 (ja) 2002-10-30 2008-04-23 株式会社東芝 不揮発性半導体記憶装置
KR20050072152A (ko) 2002-12-02 2005-07-08 쓰리엠 이노베이티브 프로퍼티즈 컴파니 복수의 광원을 사용한 조사 시스템
US7541152B2 (en) * 2002-12-24 2009-06-02 Agilent Technologies, Inc. Integrated light source for diagnostic arrays
JP2004356506A (ja) * 2003-05-30 2004-12-16 Stanley Electric Co Ltd ガラス封止型発光ダイオード
US7280812B2 (en) * 2003-06-06 2007-10-09 Interdigital Technology Corporation Digital baseband receiver with DC discharge and gain control circuits
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US7157744B2 (en) * 2003-10-29 2007-01-02 M/A-Com, Inc. Surface mount package for a high power light emitting diode
US20050116235A1 (en) * 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
US20050278301A1 (en) * 2004-05-26 2005-12-15 Castellanos Maria G System and method for determining an optimized process configuration
ATE553505T1 (de) 2004-06-15 2012-04-15 Data Cloak Llc Elektro-optische hochleistungs-led-anordnung
EP1715523B1 (en) * 2005-04-21 2012-03-14 C.R.F. Società Consortile per Azioni Transparent LED head-up display
DE602005019384D1 (de) 2005-04-21 2010-04-01 Fiat Ricerche Durchsichtige LED-Anzeigevorrichtung
CN100452452C (zh) * 2005-05-17 2009-01-14 财团法人工业技术研究院 备有发光二极管的翻转侧置结构的发光装置
US8113830B2 (en) * 2005-05-27 2012-02-14 Kerr Corporation Curing light instrument
FR2892594B1 (fr) * 2005-10-21 2007-12-07 Saint Gobain Structure lumineuse comportant au moins une diode electroluminescente, sa fabrication et ses applications
TWI306652B (en) * 2005-10-28 2009-02-21 Chipmos Technologies Inc Light emitting diode package structure
JP2007234681A (ja) * 2006-02-27 2007-09-13 Apic Yamada Corp 半導体製造装置
TWI302043B (en) * 2006-06-27 2008-10-11 Everlight Electronics Co Ltd Base structure for ultra-thin light-emitting diode and manufacturing method thereof
TWI350409B (en) * 2006-07-06 2011-10-11 Nat Univ Chung Hsing Flexible and could be rolling-up area lights module and the method of producing thereof
US8047686B2 (en) 2006-09-01 2011-11-01 Dahm Jonathan S Multiple light-emitting element heat pipe assembly
WO2008069605A1 (en) * 2006-12-08 2008-06-12 Seoul Semiconductor Co., Ltd. Light emitting device
KR101456266B1 (ko) * 2006-12-08 2014-11-04 서울반도체 주식회사 발광소자
US8002434B2 (en) * 2007-02-12 2011-08-23 GE Lighting Solutions, LLC LED lighting systems for product display cases
US9455783B2 (en) 2013-05-06 2016-09-27 Federal Law Enforcement Development Services, Inc. Network security and variable pulse wave form with continuous communication
US9294198B2 (en) 2007-05-24 2016-03-22 Federal Law Enforcement Development Services, Inc. Pulsed light communication key
WO2008148050A1 (en) 2007-05-24 2008-12-04 Federal Law Enforcement Development Services, Inc. Led light interior room and building communication system
US11265082B2 (en) 2007-05-24 2022-03-01 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
US9258864B2 (en) 2007-05-24 2016-02-09 Federal Law Enforcement Development Services, Inc. LED light control and management system
US9414458B2 (en) 2007-05-24 2016-08-09 Federal Law Enforcement Development Services, Inc. LED light control assembly and system
US9100124B2 (en) 2007-05-24 2015-08-04 Federal Law Enforcement Development Services, Inc. LED Light Fixture
EP2009344A1 (de) * 2007-06-25 2008-12-31 Alcan Technology & Management AG Flächige Beleuchtungseinrichtung, Herstellungsverfahren für eine flächige Beleuchtungseinrichtung
US8274241B2 (en) * 2008-02-06 2012-09-25 C. Crane Company, Inc. Light emitting diode lighting device
US8350499B2 (en) * 2008-02-06 2013-01-08 C. Crane Company, Inc. High efficiency power conditioning circuit for lighting device
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
DE102008030843B4 (de) * 2008-06-30 2021-08-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Anordnung sowie Verfahren zur Herstellung einer optoelektronischen Anordnung
FR2937464B1 (fr) * 2008-10-21 2011-02-25 Commissariat Energie Atomique Assemblage d'une puce microelectronique a rainure avec un element filaire sous forme de toron et procede d'assemblage
US8890773B1 (en) 2009-04-01 2014-11-18 Federal Law Enforcement Development Services, Inc. Visible light transceiver glasses
US9066777B2 (en) 2009-04-02 2015-06-30 Kerr Corporation Curing light device
US9072572B2 (en) 2009-04-02 2015-07-07 Kerr Corporation Dental light device
TWI556696B (zh) * 2009-07-14 2016-11-01 蔡乃成 表面黏著型發光元件燈組之製造方法
WO2011111516A1 (ja) 2010-03-12 2011-09-15 シャープ株式会社 発光装置の製造方法、発光装置、照明装置、バックライト、液晶パネル、表示装置、表示装置の製造方法、表示装置の駆動方法および液晶表示装置
JP2011211047A (ja) * 2010-03-30 2011-10-20 Sharp Corp 表示装置、表示装置の製造方法および表示装置の駆動方法
US9222645B2 (en) 2010-11-29 2015-12-29 RTC Industries, Incorporated LED lighting assembly and method of lighting for a merchandise display
US11274808B2 (en) 2010-06-17 2022-03-15 Rtc Industries, Inc. LED lighting assembly and method of lighting for a merchandise display
US8543505B2 (en) 2011-01-14 2013-09-24 Federal Law Enforcement Development Services, Inc. Method of providing lumens and tracking of lumen consumption
KR101824011B1 (ko) * 2011-07-29 2018-01-31 엘지이노텍 주식회사 발광소자 패키지
US9194556B1 (en) 2012-02-22 2015-11-24 Theodore G. Nelson Method of producing LED lighting apparatus and apparatus produced thereby
TW201425795A (zh) * 2012-12-25 2014-07-01 Hon Hai Prec Ind Co Ltd Led燈條製作方法
US9265112B2 (en) 2013-03-13 2016-02-16 Federal Law Enforcement Development Services, Inc. LED light control and management system
US20150198941A1 (en) 2014-01-15 2015-07-16 John C. Pederson Cyber Life Electronic Networking and Commerce Operating Exchange
US9502625B2 (en) 2014-06-06 2016-11-22 Rohinni, LLC Electrophotographic deposition of unpackaged semiconductor device
US9989223B1 (en) * 2015-03-09 2018-06-05 Automated Assembly Corporation LED lighting apparatus with LEDs and wires attached to metal sheet member by adhesive
US20170046950A1 (en) 2015-08-11 2017-02-16 Federal Law Enforcement Development Services, Inc. Function disabler device and system
DE102016122810A1 (de) * 2016-11-25 2018-05-30 Osram Opto Semiconductors Gmbh Bauteil mit einem lichtemittierenden halbleiterchip
WO2018132716A1 (en) * 2017-01-12 2018-07-19 Rohinni, LLC Apparatus for high speed printing of semiconductor devices
WO2019177755A1 (en) * 2018-03-13 2019-09-19 Apple Inc. Displays with direct-lit backlight units
US11333924B1 (en) 2021-04-16 2022-05-17 Apple Inc. Displays with direct-lit backlight units
US11526051B2 (en) 2021-04-16 2022-12-13 Apple Inc. Displays with direct-lit backlight units
US11874559B2 (en) 2021-09-23 2024-01-16 Apple Inc. Display modules with direct-lit backlight units

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1407908A (en) * 1972-04-14 1975-10-01 Sony Corp Alpha-numeric character display devices
US3911431A (en) * 1973-01-22 1975-10-07 Tokyo Shibaura Electric Co Light-emitting display device
US3877052A (en) * 1973-12-26 1975-04-08 Bell Telephone Labor Inc Light-emitting semiconductor apparatus for optical fibers
US3936694A (en) * 1973-12-28 1976-02-03 Sony Corporation Display structure having light emitting diodes
US4024627A (en) * 1974-04-29 1977-05-24 Amp Incorporated Package mounting of electronic chips, such as light emitting diodes
US4249299A (en) * 1979-03-05 1981-02-10 Hughes Aircraft Company Edge-around leads for backside connections to silicon circuit die
JPS553690A (en) * 1979-04-04 1980-01-11 Toshiba Corp Semiconductor luminous indicator
US4372802A (en) * 1980-06-02 1983-02-08 Tokyo Denki Kagaku Kogyo Kabushiki Kaisha Apparatus for mounting chip type circuit elements on printed circuit boards
JPS5749284A (en) * 1980-09-09 1982-03-23 Matsushita Electric Ind Co Ltd Manufacture of light-emitting display device
US4843036A (en) * 1987-06-29 1989-06-27 Eastman Kodak Company Method for encapsulating electronic devices
DE8711105U1 (ko) * 1987-08-14 1987-11-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
US4850780A (en) * 1987-09-28 1989-07-25 Kulicke And Soffa Industries Inc. Pre-peel die ejector apparatus
EP0355836A3 (en) * 1988-08-24 1991-05-02 TDK Corporation Apparatus for and method of automatically mounting electronic component on printed circuit board
FR2637150B1 (fr) * 1988-09-23 1995-07-28 Neiman Sa Reseau de diodes electroluminescentes

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DE69329522D1 (de) 2000-11-09
US5475241A (en) 1995-12-12
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CN1050936C (zh) 2000-03-29
JPH06177435A (ja) 1994-06-24
EP0588040A2 (en) 1994-03-23
DE69332570T2 (de) 2003-09-25
US5265792A (en) 1993-11-30
EP0739043A3 (en) 1997-10-29
KR100297453B1 (ko) 2001-10-24
DE69331554D1 (de) 2002-03-21
EP0588040B1 (en) 2000-10-04
DE69329522T2 (de) 2001-05-17
EP0588040A3 (en) 1994-04-06
EP0843365A2 (en) 1998-05-20
EP0739043A2 (en) 1996-10-23
EP0739043B1 (en) 2002-02-06
CN1086046A (zh) 1994-04-27
EP0843365B1 (en) 2002-12-11
DE69331554T2 (de) 2002-07-11
TW243557B (ko) 1995-03-21
EP0843365A3 (en) 1998-11-11

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