KR930020513A - 전계방출형 캐소드 - Google Patents

전계방출형 캐소드 Download PDF

Info

Publication number
KR930020513A
KR930020513A KR1019930004822A KR930004822A KR930020513A KR 930020513 A KR930020513 A KR 930020513A KR 1019930004822 A KR1019930004822 A KR 1019930004822A KR 930004822 A KR930004822 A KR 930004822A KR 930020513 A KR930020513 A KR 930020513A
Authority
KR
South Korea
Prior art keywords
field emission
circuit
single crystal
crystal substrate
matrix
Prior art date
Application number
KR1019930004822A
Other languages
English (en)
Other versions
KR0129676B1 (ko
Inventor
다까오 기시노
고오이찌 니시우찌
시게오 이또오
Original Assignee
호소야 레이지
후다바 덴시 고오교오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호소야 레이지, 후다바 덴시 고오교오 가부시끼가이샤 filed Critical 호소야 레이지
Publication of KR930020513A publication Critical patent/KR930020513A/ko
Application granted granted Critical
Publication of KR0129676B1 publication Critical patent/KR0129676B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

표시밀도가 높고 FEC와 함께 만든 회로의 특성이 양호하고, 스태틱 구동할 수 있는 전계방출형 캐소드를 제공한다.
Si단결정기판(1) 상에는 각 복수개의 제어선(3)과 데이타선(5)이 매트릭스를 구성하고 있고, 복수의 요소영역(6)이 형성되어 있다.
각 요소영역(6)내에 있어서 Si단결정기판(1) 상에는 회로요소(7)가 형성되고 그위에는 전계방출부(8)가 적층하여 형성되어 있다.회로요소(7)는 데이타선(5)에 드레인이 접속되고 제어선(3)에 게이트가 접속된 스위칭소자인 트랜지스터와, 입력신호의 기억회로인 캐패시터와, 전계방출부(8)에 입력신호를 증폭하여 부여하는 트랜지스터를 갖고 있다. Si단결정기판(1)위에 만들어지는 회로요소(7)의 특성은 양호하고 전계방출부(8)는 그위에 적층하므로 밀도가 높아진다.
또 회로요소(7)는 캐패시터

Description

전계방출형 캐소드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 일실시예의 전체회로도.
제2도는 일실시예의 일요소영역에 있어서의 회로도.
제3도는 (a)는 일실시예의 단면도.(b)는 평면도.

Claims (3)

  1. Si단결정 기판과 서로 교차하는 두 방향에 대하여 상기 Si단결정 기판상에 적층하여 배설된 복수개씩의 매트릭스 배선과 상기 매트릭스 배선에 의하여 구획된 상기 Si단결정 기판상의 복수의 요소영역내에 각각 형성되고 스위칭 소자와 기억회로를 가짐과 동시에 입력측이 상기 매트릭스 배선에 접속된 회로요소와 상기 각 요소영역내에 각각 형성되고, 상기 각 회로요소의 출력측에 접속된 전계방출부를 갖는 전계방출형 캐소드.
  2. 제1항에 있어서, 상기 회로요소가 상기 매트릭스 배선에 접속된 스위칭소자와 상기 스위칭소자에 의하여 입력되는 신호를 기억하는 기억회로와 상기 기억회로에 기억된 신호를 증폭하여 상기 전계방출부에 부여하는 구동회로에 의하여 구성된 것을 특징으로 하는 전계방출형 캐소드.
  3. 제1항에 있어서, Si단결정 기판상의 매트릭스 주위영역에 드라이버회로를 갖는 것을 특징으로 하는 전계방출소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930004822A 1992-03-31 1993-03-26 전계방출형 캐소드 KR0129676B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7727892A JP2661457B2 (ja) 1992-03-31 1992-03-31 電界放出形カソード
JP92-077278 1992-03-31

Publications (2)

Publication Number Publication Date
KR930020513A true KR930020513A (ko) 1993-10-20
KR0129676B1 KR0129676B1 (ko) 1998-04-06

Family

ID=13629402

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930004822A KR0129676B1 (ko) 1992-03-31 1993-03-26 전계방출형 캐소드

Country Status (4)

Country Link
US (1) US5402041A (ko)
JP (1) JP2661457B2 (ko)
KR (1) KR0129676B1 (ko)
FR (1) FR2689312B1 (ko)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2613669B2 (ja) * 1990-09-27 1997-05-28 工業技術院長 電界放出素子及びその製造方法
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5536193A (en) 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5956004A (en) * 1993-05-11 1999-09-21 Micron Technology, Inc. Controlling pixel brightness in a field emission display using circuits for sampling and discharging
US5856812A (en) * 1993-05-11 1999-01-05 Micron Display Technology, Inc. Controlling pixel brightness in a field emission display using circuits for sampling and discharging
US5387844A (en) * 1993-06-15 1995-02-07 Micron Display Technology, Inc. Flat panel display drive circuit with switched drive current
CN1134754A (zh) 1993-11-04 1996-10-30 微电子及计算机技术公司 制作平板显示系统和元件的方法
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
FR2714211B1 (fr) * 1993-12-20 1998-03-13 Futaba Denshi Kogyo Kk Dispositif du type à émission de champ.
JP3402400B2 (ja) * 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6943764B1 (en) 1994-04-22 2005-09-13 Semiconductor Energy Laboratory Co., Ltd. Driver circuit for an active matrix display device
US5920154A (en) 1994-08-02 1999-07-06 Micron Technology, Inc. Field emission display with video signal on column lines
JP3079352B2 (ja) * 1995-02-10 2000-08-21 双葉電子工業株式会社 ＮｂＮ電極を用いた真空気密素子
JP3024539B2 (ja) * 1995-05-17 2000-03-21 双葉電子工業株式会社 電子線励起発光素子
US5644327A (en) * 1995-06-07 1997-07-01 David Sarnoff Research Center, Inc. Tessellated electroluminescent display having a multilayer ceramic substrate
US6118417A (en) * 1995-11-07 2000-09-12 Micron Technology, Inc. Field emission display with binary address line supplying emission current
JP3060928B2 (ja) * 1995-12-13 2000-07-10 双葉電子工業株式会社 電界放出カソードとその製造方法
US5894293A (en) * 1996-04-24 1999-04-13 Micron Display Technology Inc. Field emission display having pulsed capacitance current control
KR100233254B1 (ko) * 1996-12-21 1999-12-01 정선종 전계 방출 디스플레이
GB2321335A (en) * 1997-01-16 1998-07-22 Ibm Display device
JP3764906B2 (ja) * 1997-03-11 2006-04-12 独立行政法人産業技術総合研究所 電界放射型カソード
US5952789A (en) * 1997-04-14 1999-09-14 Sarnoff Corporation Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor
JP4529011B2 (ja) * 1997-10-01 2010-08-25 凸版印刷株式会社 冷電子放出素子及びその製造方法
US6897855B1 (en) * 1998-02-17 2005-05-24 Sarnoff Corporation Tiled electronic display structure
KR100301242B1 (ko) * 1998-11-30 2001-09-06 오길록 전계방출디스플레이장치
JP4714953B2 (ja) * 1999-01-13 2011-07-06 ソニー株式会社 平面型表示装置
US6498592B1 (en) 1999-02-16 2002-12-24 Sarnoff Corp. Display tile structure using organic light emitting materials
KR100319453B1 (ko) 1999-08-04 2002-01-05 오길록 2극형 전계 에미터를 가진 전계 방출 디스플레이
KR100378597B1 (ko) 2000-12-22 2003-04-03 한국전자통신연구원 고해상도 전계 방출 디스플레이
TWI283427B (en) * 2001-07-12 2007-07-01 Semiconductor Energy Lab Display device using electron source elements and method of driving same
JP3954002B2 (ja) 2002-12-24 2007-08-08 韓國電子通信研究院 電界放出ディスプレイ
KR100568501B1 (ko) * 2003-12-10 2006-04-07 한국전자통신연구원 전계 방출 디스플레이
KR100591242B1 (ko) * 2004-05-04 2006-06-19 한국전자통신연구원 전계 방출 디스플레이
KR20060011665A (ko) * 2004-07-30 2006-02-03 삼성에스디아이 주식회사 전자 방출 소자와 이의 제조 방법
JP4947336B2 (ja) * 2005-11-04 2012-06-06 双葉電子工業株式会社 電界放出素子
KR100651624B1 (ko) * 2005-11-10 2006-12-01 한국전자통신연구원 액티브-매트릭스 전계 방출 디스플레이
KR100801139B1 (ko) * 2005-12-08 2008-02-05 한국전자통신연구원 전계 방출 픽셀 및 전계 방출 디스플레이
TW200726312A (en) * 2005-12-29 2007-07-01 Ind Tech Res Inst Field emission display
KR100801965B1 (ko) * 2006-10-09 2008-02-12 한국전자통신연구원 액티브-매트릭스 전계 방출 디스플레이
JP5074879B2 (ja) 2007-10-16 2012-11-14 双葉電子工業株式会社 電子放出素子及び表示素子

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500102A (en) * 1967-05-15 1970-03-10 Us Army Thin electron tube with electron emitters at intersections of crossed conductors
US3581148A (en) * 1969-06-04 1971-05-25 Roger Raoul Brignet Direct current static transformer
US3622828A (en) * 1969-12-01 1971-11-23 Us Army Flat display tube with addressable cathode
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
FR2568394B1 (fr) * 1984-07-27 1988-02-12 Commissariat Energie Atomique Dispositif de visualisation par cathodoluminescence excitee par emission de champ
US4904895A (en) * 1987-05-06 1990-02-27 Canon Kabushiki Kaisha Electron emission device
DE68926090D1 (de) * 1988-10-17 1996-05-02 Matsushita Electric Ind Co Ltd Feldemissions-Kathoden
FR2641108A1 (en) * 1988-12-23 1990-06-29 Thomson Csf Display device having a cathode ray tube screen
KR910013438A (ko) * 1989-12-18 1991-08-08 야마무라 가쯔미 필드 전자 방출 장치 및 그 생산 공정
JP2656843B2 (ja) * 1990-04-12 1997-09-24 双葉電子工業株式会社 表示装置
JP2634295B2 (ja) * 1990-05-17 1997-07-23 双葉電子工業株式会社 電子放出素子
JP2656851B2 (ja) * 1990-09-27 1997-09-24 工業技術院長 画像表示装置
JPH04221990A (ja) * 1990-12-25 1992-08-12 Sony Corp 画像表示装置
US5212426A (en) * 1991-01-24 1993-05-18 Motorola, Inc. Integrally controlled field emission flat display device

Also Published As

Publication number Publication date
KR0129676B1 (ko) 1998-04-06
US5402041A (en) 1995-03-28
FR2689312B1 (fr) 1994-11-10
JPH0644927A (ja) 1994-02-18
FR2689312A1 (fr) 1993-10-01
JP2661457B2 (ja) 1997-10-08

Similar Documents

Publication Publication Date Title
KR930020513A (ko) 전계방출형 캐소드
KR960019802A (ko) 반도체장치
KR910020472A (ko) 액정표시패널 및 액정표시장치
KR910008462A (ko) 액티브매트릭스 액정표시소자
KR920016886A (ko) 표시 장치
KR920012989A (ko) 액정 전기 광학 장치 및 그 구동 방법
KR920018514A (ko) 전기 광학 장치
KR970071087A (ko) 액정 표시 장치 및 그 구동 방법
KR950006674A (ko) 표시 장치
KR930002864A (ko) 액정표시 장치
KR900010455A (ko) 액정 표시 소자 제조 방법
KR960006057A (ko) 박막회로소자를 구비한 전자장치
KR880011797A (ko) 반도체 기억장치
KR960018729A (ko) 한 화소에 이중 배선과 복수의 트랜지스터를 구비한 액정 표시 장치
KR840005593A (ko) 모노리식(monolithic) 반도체 메모리
KR970067069A (ko) 액티브매트릭스 액정디스플레이의 구동회로
CN113096573B (zh) 显示面板和显示装置
KR840001778A (ko) 반도체 집적회로 장치(半導體 集積回路 裝置)
KR970059791A (ko) 액정표시장치의 구조
KR930018737A (ko) 티에프티(tft) 부하형 에스알에이엠(sram)
KR910003755A (ko) 박막 트랜지스터를 이용한 메모리소자 및 메모리 회로
KR940006270A (ko) 박막트랜지스터 부하를 가지는 반도체 메모리장치
KR960019736A (ko) 반도체 기억장치
KR960011492A (ko) 액티브 매트릭스 액정표시소자
KR930001210A (ko) 비트 클리어 및 레지스터 초기화 기능을 갖는 반도체 기억 회로

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20011107

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee