KR930014992A - 하나이상의 메모리 셀을 구비한 반도체 장치 - Google Patents

하나이상의 메모리 셀을 구비한 반도체 장치 Download PDF

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Publication number
KR930014992A
KR930014992A KR1019920024037A KR920024037A KR930014992A KR 930014992 A KR930014992 A KR 930014992A KR 1019920024037 A KR1019920024037 A KR 1019920024037A KR 920024037 A KR920024037 A KR 920024037A KR 930014992 A KR930014992 A KR 930014992A
Authority
KR
South Korea
Prior art keywords
memory cells
line
semiconductor device
collector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019920024037A
Other languages
English (en)
Korean (ko)
Inventor
제빈크 에버트
베르트레그트 말턴
아두리아누스 마리아 훅스 고데프리두스
Original Assignee
프레데릭 얀 스미트
엔. 브이. 필립스 글로아이람펜 파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프레데릭 얀 스미트, 엔. 브이. 필립스 글로아이람펜 파브리켄 filed Critical 프레데릭 얀 스미트
Publication of KR930014992A publication Critical patent/KR930014992A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
KR1019920024037A 1991-12-16 1992-12-12 하나이상의 메모리 셀을 구비한 반도체 장치 Withdrawn KR930014992A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP91203305 1991-12-16
NL91203305.7 1991-12-16

Publications (1)

Publication Number Publication Date
KR930014992A true KR930014992A (ko) 1993-07-23

Family

ID=8208074

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920024037A Withdrawn KR930014992A (ko) 1991-12-16 1992-12-12 하나이상의 메모리 셀을 구비한 반도체 장치

Country Status (6)

Country Link
US (1) US5329481A (enExample)
EP (1) EP0547673B1 (enExample)
JP (1) JPH05251670A (enExample)
KR (1) KR930014992A (enExample)
DE (1) DE69223495D1 (enExample)
TW (1) TW289168B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100692398B1 (ko) * 2004-03-24 2007-03-09 롬 앤드 하스 캄파니 전계 프로그램 가능 저장소자를 갖는 메모리 셀 및 이를동작하는 방법

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6150687A (en) 1997-07-08 2000-11-21 Micron Technology, Inc. Memory cell having a vertical transistor with buried source/drain and dual gates
US6066869A (en) 1997-10-06 2000-05-23 Micron Technology, Inc. Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor
US6528837B2 (en) * 1997-10-06 2003-03-04 Micron Technology, Inc. Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
FR2770019B1 (fr) * 1997-10-20 2000-01-28 Sgs Thomson Microelectronics Point memoire mos
US6025225A (en) 1998-01-22 2000-02-15 Micron Technology, Inc. Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US5963469A (en) 1998-02-24 1999-10-05 Micron Technology, Inc. Vertical bipolar read access for low voltage memory cell
US6124729A (en) 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US6043527A (en) 1998-04-14 2000-03-28 Micron Technology, Inc. Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device
US6208164B1 (en) 1998-08-04 2001-03-27 Micron Technology, Inc. Programmable logic array with vertical transistors
US7224024B2 (en) * 2002-08-29 2007-05-29 Micron Technology, Inc. Single transistor vertical memory gain cell
US6838723B2 (en) 2002-08-29 2005-01-04 Micron Technology, Inc. Merged MOS-bipolar capacitor memory cell
US7030436B2 (en) 2002-12-04 2006-04-18 Micron Technology, Inc. Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
US6956256B2 (en) * 2003-03-04 2005-10-18 Micron Technology Inc. Vertical gain cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090254A (en) * 1976-03-01 1978-05-16 International Business Machines Corporation Charge injector transistor memory
NL7700880A (nl) * 1976-12-17 1978-08-01 Philips Nv Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren.
JPH021162A (ja) * 1988-01-29 1990-01-05 Toshiba Corp 半導体装置
JPH02246370A (ja) * 1989-03-20 1990-10-02 Fujitsu Ltd 半導体装置
US5060194A (en) * 1989-03-31 1991-10-22 Kabushiki Kaisha Toshiba Semiconductor memory device having a bicmos memory cell
JPH0383293A (ja) * 1989-08-25 1991-04-09 Mitsubishi Electric Corp 内容参照メモリセル
JPH03136366A (ja) * 1989-10-23 1991-06-11 Nec Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100692398B1 (ko) * 2004-03-24 2007-03-09 롬 앤드 하스 캄파니 전계 프로그램 가능 저장소자를 갖는 메모리 셀 및 이를동작하는 방법

Also Published As

Publication number Publication date
EP0547673B1 (en) 1997-12-10
EP0547673A3 (enExample) 1994-03-02
JPH05251670A (ja) 1993-09-28
DE69223495D1 (de) 1998-01-22
US5329481A (en) 1994-07-12
EP0547673A2 (en) 1993-06-23
TW289168B (enExample) 1996-10-21

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