KR930008185A - 기초재의 반응 코팅을 위한 방법과 장치 - Google Patents
기초재의 반응 코팅을 위한 방법과 장치 Download PDFInfo
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- KR930008185A KR930008185A KR1019910018055A KR910018055A KR930008185A KR 930008185 A KR930008185 A KR 930008185A KR 1019910018055 A KR1019910018055 A KR 1019910018055A KR 910018055 A KR910018055 A KR 910018055A KR 930008185 A KR930008185 A KR 930008185A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
스퍼터링된 타겟트와 전기적으로 함께 작용하고 진공될 수 있는 코팅실에 배설된 자석들에 연결된 음극에 접속되는 교류전원으로 구성되고 코팅실에 프로세스 가스와 예를들면 아르곤과 산소 같은 반응 가스를 투여할 수 있는 이산화규소와 같은 절연물로 이루어진 기초재의 반응 코팅장치에서, 공정을 안정적으로 유지시키고 단단한 절연피막을 만들기 위해 교류전원의 접지 안된 두 출력점을 타겟트를 지지하는 음극에 연결시킨다. 코팅실에 있는 두 음극은 기초재와 같은 간격을 두고 마주한 플라즈마 롬에 나란히 설치된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 2개의 자전관 스퍼터링 음극이 있는 스퍼터링 장치의 단면도.
Claims (7)
- 스퍼티링된 부분이 기초재(1)(1')(1")위에 떨어지는 타겟트(3)(3A)와, 전기적으로 함께 적용하고 진공될수 있는 코팅실(15)(15a)에 배열된 자석들(19, 19a, 19b 혹은 19c, 19d, 19e)에 연결된 음극(5)(5a)에 접속되는 교류전원(10)으로 구성되며, 코팅실(15)(15a)에 프로세스 가스와 예를들면 아르곤과 산소 같은 반응가스를 투여할 수 있는 이산화규소와 같은 절연물로 이루어지고, 교류전원(10)의 접지 안된 두 출력점(12)(13) 특히, 교류변환기의 2차 코일(25)의 출력 점은 타겟트(3)(3a)를 지지하는 음극들 중 하나와 연결되고, 두 음극(5)(5a)은 플라즈마룸(15)에 대해 같은 간격(A1혹은 A2)을 유지함을 특징으로 하는 기초재의 반응코팅을 위한 방법과 장치.
- 제1항에 있어서, 타겟트(3)(3a)는 알루미늄, 규소, 티타늄, 탄탈, 아연, 주석, 지르콘 혹은 이들 재료의 합금으로 만들어지고, 스퍼터링 공정 중에 코팅실(15)(15a)에 아르곤을 포합하는 기체가 투여되며, 산화 및/혹은 질산화 피막(2, 2', 2")은 선택된 타겟트 물질에 따라 Al2O3, AlN, SiO2, Si3N4, SiOxNy, TiO2, Ta2O3, Ta2O5, SnO2, ZnO 혹은 ZrO2로서 스피터링 되어짐을 특징으로 하는 기초재의 만응 코팅을 위한 방법과 장치.
- 제2항에 있어서, 방전압의 실제값이 도선(14)을 걸쳐 음극(5)에 연결된 전압계(20)에 의해 측정되어도 선(21)을 걸쳐 직류로서 제어장치(16)에 전달되고, 제어장치는 주로 피에조 밸브(piezovelve)자기밸브인 제어밸보(18)를 통해 탱크(22)의 반응가스의 흐름을 분배관(24)으로 제어해 측정 전압이 명목전압과 일치하게 됨을 특징으로 하는 기초재의 반응코팅을 위한 방법과 장치.
- 제1항 내지 제3항에 있어서, 이온이 교류전장을 추적할 수 있도록 교류전원의 주파수를 1MHz까지로 제한함을 특징으로 하는 기초재의 반응코팅을 위한 방법과 장치.
- 제3항에 있어서, 두 음극(5)(5a)이 자체 분배관(24)(24a)을 지니고, 두 분배관에서의 반응가스의 분배는 콘덕턴스 제어밸브(18)에 의해 제어되고, 두 음극의 전압의 실제값의 차이가 명목 전압치와 일치되도록 조정됨이 특징인 기초재의 반응코팅을 위한 방법과 장치.
- 제1항에 있어서, 나란히 놓여있는 두 자전관 음극(5)(5a)은 180℃에서 110℃의 각도로 연결됨을 특징으로 하는 기초재의 반응코팅을 위한 방법과 장치.
- ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4106770A DE4106770C2 (de) | 1991-03-04 | 1991-03-04 | Verrichtung zum reaktiven Beschichten eines Substrats |
DEP4106770.3 | 1991-03-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930008185A true KR930008185A (ko) | 1993-05-21 |
KR100239818B1 KR100239818B1 (ko) | 2000-01-15 |
Family
ID=6426380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910018055A KR100239818B1 (ko) | 1991-03-04 | 1991-10-14 | 기초재의 반응코팅을 위한 방법과 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5169509A (ko) |
EP (1) | EP0502242B1 (ko) |
JP (1) | JP3363919B2 (ko) |
KR (1) | KR100239818B1 (ko) |
DE (2) | DE4106770C2 (ko) |
Cited By (1)
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KR100546455B1 (ko) * | 1997-08-05 | 2006-04-14 | 미크로나스 게엠베하 | 적응필터 |
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-
1991
- 1991-03-04 DE DE4106770A patent/DE4106770C2/de not_active Expired - Lifetime
- 1991-05-09 US US07/697,712 patent/US5169509A/en not_active Expired - Lifetime
- 1991-09-25 DE DE59108836T patent/DE59108836D1/de not_active Expired - Lifetime
- 1991-09-25 EP EP91116294A patent/EP0502242B1/de not_active Expired - Lifetime
- 1991-10-14 KR KR1019910018055A patent/KR100239818B1/ko not_active IP Right Cessation
-
1992
- 1992-03-03 JP JP04517592A patent/JP3363919B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100546455B1 (ko) * | 1997-08-05 | 2006-04-14 | 미크로나스 게엠베하 | 적응필터 |
Also Published As
Publication number | Publication date |
---|---|
KR100239818B1 (ko) | 2000-01-15 |
EP0502242A3 (en) | 1993-12-15 |
US5169509A (en) | 1992-12-08 |
DE4106770C2 (de) | 1996-10-17 |
JPH04325680A (ja) | 1992-11-16 |
EP0502242B1 (de) | 1997-08-27 |
DE4106770A1 (de) | 1992-09-10 |
DE59108836D1 (de) | 1997-10-02 |
EP0502242A2 (de) | 1992-09-09 |
JP3363919B2 (ja) | 2003-01-08 |
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