KR930003308A - 스택된 칩 어셈블리 및 그 제조방법 - Google Patents

스택된 칩 어셈블리 및 그 제조방법 Download PDF

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KR930003308A
KR930003308A KR1019920012113A KR920012113A KR930003308A KR 930003308 A KR930003308 A KR 930003308A KR 1019920012113 A KR1019920012113 A KR 1019920012113A KR 920012113 A KR920012113 A KR 920012113A KR 930003308 A KR930003308 A KR 930003308A
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쥬니어 루이스 이. 게이츠
케이. 코크란 리처드
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완다 케이. 덴슨-로우
휴우즈 에어크라프 캄파니
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Abstract

내용 없음.

Description

스택된 칩 어셈블리 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 포함되는 제품을 생산하는 전형적인 제조 및 어셈블리 공정의 흐름도,
제2도는 크기가 양호한 회로들보다 더 큰 각각의 칩에 포함되도록 “G”로 표시된 양호한 집적 회도들을 사용하여 본 발명의 제조 및 어셈블리 공정에서의 개시 단계를 보여 주기 위해 변형된 전형적인 전체 웨이퍼를 나타내는 도면,
제3도는 회로 기판 상에 장착되기 전에 스택된 칩 어셈블리를 포함하는 본 발명의 한 실시예의 도면,
제4도 내지 제7도는 메모리 또는 다른 칩들을 인쇄 회로 기판 상에 장착하기 위한 특별한 요건들을 만족시키기 위해 고안된 다른 제조방법을 보여주는 본 발명의 다른 실시예를 도시하는 도면.

Claims (20)

  1. 제조, 어셈블링 및 스택된 상위 및 하위 칩 배열에 있는 적어도 두개의 집적 회로/메모리 칩들에서 회로기판/인쇄 회로 기판 지지대에 상호접속시킴으로써 스택된 칩 어셈블리를 제조하는 방법에 있어서, 동작가능 및 동작불능 회로를 결정하기 위해 전 웨이퍼를 검사하는 단계, 개개의 크기가 회로들의 개별 크기보다 각각 큰 칩들은 규정하고 칩들의 각각을 동작가능 회로들중 하나에 위치시켜서, 웨이퍼를 상위 및 하위 칩들로 다이스하기 위한 준비로서 칩들을 선택된 회로들에 인접한 회로들중 하나 위에 오우버랩시키기 위한 다이싱법을 제공하는 단계, 스택된 칩 어셈블리의 구성 부분을 규정하는 회로 설계에 따라 유전체층 마스크를 웨이퍼에 인가하는 단계, 입력/출력 재배치 금속을 마스크를 통해 노출된 웨이퍼 부분에 인가하는 단계, 상위 칩에 대해, 리본 본딩 가능 금속을 웨이퍼 상의 주변 패드들에 인가하여 패드를 마스킹하는 단계, 웨이퍼를 상위 및 하위 칩들로 다이싱하는 단계, 칩들을 인접 칩에 접촉하여 칩들의 층진 스택에 어셈블리하여 본딩하는 단계, 상기 스택을 베이스 상에 장착하는 단계, 스택을 베이스에 리본 본딩하는 단계, 상기 스택되고 본딩된 칩들을 전기적으로 검사하는 단계, 상기 스택되고 본딩된 칩들과 베이스를 지지대에 장착하는 단계, 상기 스택되고 본딩된 칩들과 베이스를 지지대에 리본 본딩하는 단계 및 상기 스택되고 본딩된 칩들, 베이스 및 지지대 어셈블리 캡슐포장하는 단계를 포함하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 칩을 스택에 어셈블링하고 본딩하는 상기 단계와 스택을 베이스 상에 장착하는 단계 사이에 전기적 접촉점들을 노출시키기 위해 칩들의 모서리들을 연마하는 단계, 상기 접촉들중 선택된 것들에 있는 모서리들을 금속화하는 단계, 최상위 칩 상의 패드들 중 선택된 하나를 금속화하는 단계, 및 상기 금속화된 모서리로 부터의 리본 리드들과 패드들을 베이스 상에 있는 표시된 접촉 영역에 본딩함으로써 상기 스택-베이스 리본 본딩 단계를 수행하는 단계를 포함하는 것을 특징으로 하는 방법.
  3. 두께에 비해 상대적으로 큰 표면을 갖는 칩들의 어셈블리를 제조하는 방법에 있어서, 한 칩의 큰 표면이 인접한 칩의 큰 표면과 접촉되도록 적어도 두개의 집적회로 침들을 포개어 스택하는 단계, 한칩의 큰 표면의 베이스의 접촉하도록 스택된 칩들을 베이스의 표면에 어셈블링하는 단계 및 칩들을 베이스에 전기적으로 상호접속하는 단계를 포함하는 것을 특징으로 하는 방법.
  4. 제3항에 있어서, 개별 회로보다 각각 더 큰 개별 크기에 의해 규정되는 웨이퍼 부분을 선택하고, 상기 개별 칩들을 선택된 동작 가능 회로 상에 위치시켜서, 선택된 회로들에 인접한 회로들중 하나 위에 상기 칩들을 오우버랩시킴으로써 다수의 회로들을 갖는 웨이퍼로부터 각 칩들을 형성하는 프리스택킹 단계를 더 포함하는 것을 특징으로 하는 방법.
  5. 제4항에 있어서, 각 칩들의 주변에 접촉부들을 완전하게 위치시키는 단계를 더 포함하는 것을 특징으로 하는 방법.
  6. 제4항에 있어서, 스택된 칩들이 동일한 크기를 갖고 있고, 칩들을 그 모서리 들에서 전기적으로 상호 접속하고 최상위 칩과 베이스를 전기적으로 상호접속하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  7. 제4항에 있어서, 스택된 칩들이 동일한 크기를 갖고 있고, 칩들을 베이스에 전기적으로 상호접속하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  8. 제4항에 있어서, 스택된 칩들이 동일 크기를 갖고 있고, 작은 크기를 갖는 칩들 중 적어도 하나를 상대적으로 큰 크기를 갖는 칩들 중 적어도 다른 것 위에 스택하는 단계 및 상기 칩들을 하위 칩에, 또 거기에서 베이스에 연달아 전기적으로 상호접속하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  9. 칩들의 어셈블리를 제조하기 위한 방법에 있어서, 적어도 두개의 집적 회로 칩을 포개어서 스택하는 단계, 상기 스택된 칩들을 베이스 위에 평행하게 어셈블링하는 단계 및 상기 칩들을 베이스에 전기적으로 상호접속하는 단계를 포함하는 것을 특징으로 하는 방법.
  10. 제9항에 있어서, 개별 회로보다 각각 더 큰 개별 칩 크기에 의해 규정되는 웨이퍼 부분을 선택하고 상기 개별 칩들을 선택된 동작 가능 회로상에 위치시켜서, 선택된 회로들에 인접한 회로들중 하나 위에 상기 칩들을 오우버랩시킴으로써 다수의 회로들을 갖는 웨이퍼로부터 각 칩들을 형성하는 프리스택킹 단계를 더 포함하는 것을 특징으로 하는 방법.
  11. 제9항에 있어서, 각 칩들의 주변에 접촉부들을 완전하게 위치시키는 단계를 더 포함하는 것을 특징으로 하는 방법.
  12. 제10항에 있어서, 상기 칩-베이스 상호접속 단계 이전에 칩들 사이에 상호 접속을 형성하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  13. 제12항에 있어서, 상기 칩-베이스 상호접속 단계가 최상위 칩에서 베이스로의 접속부들을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
  14. 포개어서 스택되고 베이스 위에서 평행으로 어셈블되고 상기 베이스에 전기적으로 상호접속되고 있는 적어도 두개의 집적 회로를 포함하는 것을 특징으로 하는 칩들의 어셈블리.
  15. 제14항에 있어서, 웨이퍼 부분들이 개별 회로들보다 더 큰 개별 칩 크기에 의해 선택되고 상기 개별 칩들이 상기 회로들 중 선택된 동작가능한 것 위에 위치되고, 다수의 회로들을 갖는 웨이퍼로부터 상기 각 칩들을 형성하여서, 상기 선택된 회로들에 인접한 상기 회로들중 하나 위에 상기 칩들을 오우버랩하기 위한 수단을 더 포함하는 것을 특징으로 하는 어셈블리.
  16. 제14항에 있어서, 상기 각 칩들의 주변에 완전하게 위치된 접촉부들을 포함하는 것을 특징으로 하는 어셈블리.
  17. 제15항에 있어서, 상기 칩들 각각이 그 주위에 완전히 연장되어 있는 모서리 전기접촉부들이 제공되어 있고, 상기 칩들을 상호접속하기 위하여 상기 각 칩들의 상기 모서리 접촉부들 사이에 전기적 상호접속부들을 더 포함하는 것을 특징으로 하는 어셈블리.
  18. 제17항에 있어서, 상기 칩들 중 최상위의 것에서 상기 베이스로 연장하는 전기적 접속부들을 더 포함하는 것을 특징으로 하는 어셈블리.
  19. 제17항에 있어서, 상기 스택된 칩들이 동일 크기를 갖고 있고, 상기 칩들 사이의 상기 전기적 상호접속부들이 상기 칩들의 모서리들에 위치되고, 최상위 칩과 상기 베이스 사이에 전기적 상호접속이 위치되는 것을 특징으로 하는 어셈블리.
  20. 제17항에 있어서, 상기 스택된 칩들이 동일하지 않은 크기를 갖고 있어서 작은 크기를 갖는 것들 중 적어도 하나가 상대적으로 큰 크기를 갖는 칩들 중 적어도 다른 것 위에 있고 상기 상위 칩들에서 상기 하위 칩들로, 거기에서 다시 상기 베이스로의 연속적인 것들 사이에 전기적 상호접속부들을 포함하는 것을 특징으로 하는 어셈블리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920012113A 1991-07-09 1992-07-08 스택된 칩 어셈블리 및 그 제조방법 KR960003768B1 (ko)

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US727,500 1991-07-09
US07/727,500 US5311401A (en) 1991-07-09 1991-07-09 Stacked chip assembly and manufacturing method therefor

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EP0522518B1 (en) 2002-05-22
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EP0522518A3 (en) 1994-11-30
KR960003768B1 (ko) 1996-03-22
IL102397A0 (en) 1993-05-13
AU1947592A (en) 1993-01-21
JPH05259375A (ja) 1993-10-08
US5311401A (en) 1994-05-10
EP0522518A2 (en) 1993-01-13
DE69232611T2 (de) 2003-01-30
IL102397A (en) 1995-03-30
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