KR920010695B1 - 디램셀 및 그 제조방법 - Google Patents

디램셀 및 그 제조방법 Download PDF

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Publication number
KR920010695B1
KR920010695B1 KR1019890006720A KR890006720A KR920010695B1 KR 920010695 B1 KR920010695 B1 KR 920010695B1 KR 1019890006720 A KR1019890006720 A KR 1019890006720A KR 890006720 A KR890006720 A KR 890006720A KR 920010695 B1 KR920010695 B1 KR 920010695B1
Authority
KR
South Korea
Prior art keywords
trench
film
source region
forming
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019890006720A
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English (en)
Korean (ko)
Other versions
KR900019141A (ko
Inventor
전준영
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019890006720A priority Critical patent/KR920010695B1/ko
Priority to DE3927176A priority patent/DE3927176A1/de
Priority to JP1221888A priority patent/JPH0715949B2/ja
Priority to FR8911703A priority patent/FR2647267B1/fr
Priority to GB8926627A priority patent/GB2231718B/en
Priority to US07/451,775 priority patent/US5027172A/en
Publication of KR900019141A publication Critical patent/KR900019141A/ko
Priority to US07/719,341 priority patent/US5455192A/en
Application granted granted Critical
Publication of KR920010695B1 publication Critical patent/KR920010695B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019890006720A 1989-05-19 1989-05-19 디램셀 및 그 제조방법 Expired KR920010695B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019890006720A KR920010695B1 (ko) 1989-05-19 1989-05-19 디램셀 및 그 제조방법
DE3927176A DE3927176A1 (de) 1989-05-19 1989-08-17 Dynamische speicherzelle fuer willkuerlichen zugriff und ihr herstellungsverfahren
JP1221888A JPH0715949B2 (ja) 1989-05-19 1989-08-30 Ｄｒａｍセル及びその製造方法
FR8911703A FR2647267B1 (fr) 1989-05-19 1989-09-07 Cellule de memoire vive dynamique et procede de fabrication
GB8926627A GB2231718B (en) 1989-05-19 1989-11-24 A dynamic random access memory cell and method of making the same
US07/451,775 US5027172A (en) 1989-05-19 1989-12-18 Dynamic random access memory cell and method of making thereof
US07/719,341 US5455192A (en) 1989-05-19 1991-06-24 Method of making dynamic random access memory cell having a stacked capacitor and a trench capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890006720A KR920010695B1 (ko) 1989-05-19 1989-05-19 디램셀 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR900019141A KR900019141A (ko) 1990-12-24
KR920010695B1 true KR920010695B1 (ko) 1992-12-12

Family

ID=19286319

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890006720A Expired KR920010695B1 (ko) 1989-05-19 1989-05-19 디램셀 및 그 제조방법

Country Status (5)

Country Link
JP (1) JPH0715949B2 (enrdf_load_stackoverflow)
KR (1) KR920010695B1 (enrdf_load_stackoverflow)
DE (1) DE3927176A1 (enrdf_load_stackoverflow)
FR (1) FR2647267B1 (enrdf_load_stackoverflow)
GB (1) GB2231718B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8187940B2 (en) 2006-01-23 2012-05-29 Hynix Semiconductor Inc. Method for fabricating semiconductor device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185284A (en) * 1989-05-22 1993-02-09 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
KR910013554A (ko) * 1989-12-08 1991-08-08 김광호 반도체 장치 및 그 제조방법
JPH03200366A (ja) * 1989-12-27 1991-09-02 Nec Corp 半導体装置及びその製造方法
JPH03278573A (ja) * 1990-03-28 1991-12-10 Mitsubishi Electric Corp 半導体記憶装置
KR930007194B1 (ko) * 1990-08-14 1993-07-31 삼성전자 주식회사 반도체 장치 및 그 제조방법
US5272103A (en) * 1991-02-08 1993-12-21 Mitsubishi Denki Kabushiki Kaisha DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof
JP2748050B2 (ja) * 1991-02-08 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
US5208177A (en) * 1992-02-07 1993-05-04 Micron Technology, Inc. Local field enhancement for better programmability of antifuse PROM
JPH11145414A (ja) * 1997-09-04 1999-05-28 Toshiba Corp 半導体装置
CN112750899B (zh) 2019-10-31 2022-05-27 广东美的白色家电技术创新中心有限公司 一种半导体器件及其制备方法、电器设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
EP0169938B1 (en) * 1983-12-15 1989-03-29 Kabushiki Kaisha Toshiba Semiconductor memory device having trenched capacitor
JPS60189964A (ja) * 1984-03-12 1985-09-27 Hitachi Ltd 半導体メモリ
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPH01119053A (ja) * 1987-10-31 1989-05-11 Sony Corp 半導体メモリ装置
JP2548957B2 (ja) * 1987-11-05 1996-10-30 富士通株式会社 半導体記憶装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8187940B2 (en) 2006-01-23 2012-05-29 Hynix Semiconductor Inc. Method for fabricating semiconductor device

Also Published As

Publication number Publication date
GB8926627D0 (en) 1990-01-17
KR900019141A (ko) 1990-12-24
GB2231718A (en) 1990-11-21
DE3927176A1 (de) 1990-11-22
FR2647267A1 (fr) 1990-11-23
JPH0715949B2 (ja) 1995-02-22
GB2231718B (en) 1993-05-26
DE3927176C2 (enrdf_load_stackoverflow) 1992-03-26
JPH02312270A (ja) 1990-12-27
FR2647267B1 (fr) 1995-03-10

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