KR920003428A - 처리방법 및 장치 - Google Patents

처리방법 및 장치 Download PDF

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Publication number
KR920003428A
KR920003428A KR1019910013136A KR910013136A KR920003428A KR 920003428 A KR920003428 A KR 920003428A KR 1019910013136 A KR1019910013136 A KR 1019910013136A KR 910013136 A KR910013136 A KR 910013136A KR 920003428 A KR920003428 A KR 920003428A
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KR
South Korea
Prior art keywords
gap
heat transfer
transfer medium
medium gas
mounting table
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KR1019910013136A
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English (en)
Other versions
KR0167473B1 (ko
Inventor
이즈미 아라이
요시후미 다하라
Original Assignee
이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
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Priority claimed from JP20315690A external-priority patent/JPH0487331A/ja
Application filed by 이노우에 아키라, 도오교오 에레구토론 가부시끼가이샤 filed Critical 이노우에 아키라
Publication of KR920003428A publication Critical patent/KR920003428A/ko
Application granted granted Critical
Publication of KR0167473B1 publication Critical patent/KR0167473B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Abstract

내용 없음

Description

처리방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 본 발명의 1실시예에 관한 에칭방법에 사용되는 에칭장치의 단면도,
제2도는, 본 발명의 1실시예에 관한 에칭방법의 플로우챠트.

Claims (15)

  1. 얹어놓는대(2)위에 피처리물(6)을 얹어 놓는 공정과, 피처리물(6)과 얹어놓는대(2)와의 사이의 틈으로 배기하는 공정과, 피처리물(6)과 얹어놓는대(2)와 사이의 틈에 소량의 전열 매체가스를 예비도입하는 공정과, 이 틈내의 전열 매체가스의 압력을 제어하면서, 그 압력이 소정의 값에 도달하기 까지, 틈에 전열 매체가스를 도입하는 공정과, 피처리물(6)을 처리하는 공정을 구비한 처리방법.
  2. 얹어놓는대(2)위에 피처리물(6)을 얹어놓는 공정과, 피처리물(6)과 얹어놓는대(2)와의 사이의 틈으로 배기하는 공정과, 상기 틈으로 배기하면서 피처리물(6)과 얹어놓는대(2)와의 사이의 틈에 소량의 전열 매체가스를 예비도입하는 공정과, 상기 틈으로 부터 배기량을 제어함으로써, 이 틈내의 전열 매체가스의 압력을 제어하면서, 그 압력이 소정의 값에 도달하기 까지, 틈에 전열 매체가스를 도입하는 공정과, 피처리물(6)을 처리하는 공정을 구비한 처리방법.
  3. 제1항에 있어서, 상기 전열 매체가스는, 질소, 헬륨 및 아르곤으로 이루어지는 군으로부터 선택된 가스인 처리방법.
  4. 제1항에 있어서, 상기 얹어놓는대(2)의 피처리물(6)과의 대향면은, 등분하중곡면인 처리방법.
  5. 제1항에 있어서, 상기 얹어놓는대 (2)의 피처리물(6)과의 대향면에는 합성 수지막이 형성되어 있는 처리방법.
  6. 제1항에 있어서, 상기 피처리물(6)의 주변부는 상기 얹어놓는대(2)에 꼭눌러서 유지되는 처리방법.
  7. 제1항에 있어서, 에칭, 에싱, 이온주입 및 스피터링으로 이루어지는 군으로 부터 선택된 처리방법.
  8. 피처리물(6)을 유지하는 얹어놓는대(2)를 구성하는 제1의 전극과, 이 제1의 전극에 대향하여 배치된 제2의 전극과, 이들 제1및 제2의 전극의 사이에 플라즈마를 발생시켜, 이 플라즈마에 의해, 피처리물(6)을 처리하는 수단을 구비하며, 제1의 전극상에는 무기절연막이 형성되어 있고, 이 무기절연막 상에는 탄성 절연막이 형성되어 있는 것을 특징으로 하는 처리장치.
  9. 제8항에 있어서, 상기 무기절연막은 상기 제1의 전극 표면을 산화하여 얻은 산화막인 처리장치.
  10. 제8항에 있어서, 상기 제1의 전극은 알루미늄으로 이루어지며, 상기 무기절연막은, 산화알루미늄막인 처리장치.
  11. 제8항에 있어서, 상기 제1의 전극의 상기 피처리물(6)과의 대향면은, 등분포 하중곡면인 처리장치.
  12. 제8항에 있어서, 상기 무기절연막의 상기 피처리물(6)과의 대향면에는, 합성수지막이 형성되어 있는 처리장치.
  13. 제8항에 있어서, 상기 피처리물(6)의 주변부를 상기 얹어 놓는대(2)에 꼭눌러서 유지하는 수단을 더 구비한 처리장치.
  14. 제8항에 있어서, 에칭장치, 에싱장치, 이온주입장치, 및 스피터장치로 이루어지는 군으로 부터 선택된 처리장치.
  15. 베이스 부재위에 피열전달체를 배치하는 공정과, 피열전달체와 베이스 부제와의 사이의 틈으로 배기하는 공정과, 피열전달체와 베이스부재와의 사이의 틈에 소량의 전열매체가스를 예비도입하는 공정과, 이 틈내의 전열매체가스의 압력을 제어하면서, 그 압력이 소정의 값에 도달하기 까지, 틈에 전열 매체 가스를 도입하는 공정을 구비한 열전달 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910013136A 1990-07-31 1991-07-30 처리방법 및 장치 KR0167473B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP203155 1981-12-15
JP20315690A JPH0487331A (ja) 1990-07-31 1990-07-31 処理装置
JP20315590 1990-07-31
JP203156 1990-07-31

Publications (2)

Publication Number Publication Date
KR920003428A true KR920003428A (ko) 1992-02-29
KR0167473B1 KR0167473B1 (ko) 1999-02-01

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Application Number Title Priority Date Filing Date
KR1019910013136A KR0167473B1 (ko) 1990-07-31 1991-07-30 처리방법 및 장치

Country Status (4)

Country Link
US (1) US5203958A (ko)
EP (1) EP0469469B1 (ko)
KR (1) KR0167473B1 (ko)
TW (1) TW221318B (ko)

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KR0167473B1 (ko) 1999-02-01
TW221318B (ko) 1994-02-21
US5203958A (en) 1993-04-20
EP0469469A3 (en) 1994-09-14
EP0469469B1 (en) 1998-10-07
EP0469469A2 (en) 1992-02-05

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