KR970021361A - 플라즈마 처리방법 - Google Patents

플라즈마 처리방법 Download PDF

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Publication number
KR970021361A
KR970021361A KR1019950035923A KR19950035923A KR970021361A KR 970021361 A KR970021361 A KR 970021361A KR 1019950035923 A KR1019950035923 A KR 1019950035923A KR 19950035923 A KR19950035923 A KR 19950035923A KR 970021361 A KR970021361 A KR 970021361A
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South Korea
Prior art keywords
plasma
source power
plasma processing
processing method
helicon wave
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KR1019950035923A
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English (en)
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KR100189220B1 (ko
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히로시 노가미
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니시히라 순지
아네루바 가부시키가이샤
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Publication of KR970021361A publication Critical patent/KR970021361A/ko
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Publication of KR100189220B1 publication Critical patent/KR100189220B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

헬리콘파 플라즈마를 사용한 플라즈마 처리방법으로, 소스 전력을 제어함으로써 프로세스 가스에 있어서의 과도한 해리를 억제한다.
헬리콘파 플라즈마를 사용한 플라즈마 처리방법으로, 플라즈마 발생기에 투입되는 소스 전력을 전자밀도 또는 포화이온 전류밀도의 소스 전력의존특성에 의해 불연속적으로 변화하는 개소에 대응하는 소스 전력치보다 낮게 설정한다.

Description

플라즈마 처리방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 플라즈마 처리방법이 적용되는 헬리콘파 플라즈마원을 갖춘 플라즈마 처리장치의 개략적인 구성도.

Claims (4)

  1. 헬리콘파 플라즈마를 이용한 플라즈마 처리방법에 있어서, 소스 전력에 대한 전자밀도 또는 포화이온 전류밀도의 특성을 표시하는 선으로 불연속변화에 대응하는 소스 전력치보다 낮은 소스 전력으로 플라즈마 처리를 행하는 것을 특징으로 하는 플라즈마 처리방법.
  2. 헬리콘파 플라즈마를 이용한 플라즈마 처리방법에 있어서, 소스 전력에 대한 전자밀도 또는 포화이온 전류밀도의 특성을 표시하는 선을 선형근사한 직선의 기울기의 불연속변화에 대응하는 소스 전력치보다 낮은 소스 전력으로 플라즈마 처리를 행하는 것을 특징으로 하는 플라즈마 처리방법.
  3. 제1항 또는 제2항에 있어서, 상기 플라즈마 처리는 플라즈마 에칭처리인 것을 특징으로 하는 플라즈마 처리방법.
  4. 제3항에 있어서 상기 플라즈마 에칭처리의 대상은 실리콘 산화막인 것을 특징으로 하는 플라즈마 처리방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950035923A 1994-11-29 1995-10-18 플라즈마 처리방법 KR100189220B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-319358 1994-11-29
JP31935894A JP3483327B2 (ja) 1994-11-29 1994-11-29 プラズマ処理方法

Publications (2)

Publication Number Publication Date
KR970021361A true KR970021361A (ko) 1997-05-28
KR100189220B1 KR100189220B1 (ko) 1999-06-01

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KR1019950035923A KR100189220B1 (ko) 1994-11-29 1995-10-18 플라즈마 처리방법

Country Status (4)

Country Link
US (1) US6436304B1 (ko)
JP (1) JP3483327B2 (ko)
KR (1) KR100189220B1 (ko)
TW (1) TW300323B (ko)

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US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
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US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
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KR100323613B1 (ko) * 2000-03-29 2002-02-19 박세근 대면적 플라즈마 소스 형성장치
US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
KR200253559Y1 (ko) * 2001-07-30 2001-11-22 주식회사 플라즈마트 회전방향으로 균일한 플라즈마 밀도를 발생시키는유도결합형 플라즈마 발생장치의 안테나구조
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KR100486712B1 (ko) * 2002-09-04 2005-05-03 삼성전자주식회사 복층 코일 안테나를 구비한 유도결합 플라즈마 발생장치
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JP2008078582A (ja) * 2006-09-25 2008-04-03 Hitachi High-Technologies Corp プラズマエッチング方法
KR101446632B1 (ko) * 2013-06-24 2014-10-06 피에스케이 주식회사 기판 처리 장치 및 방법
CN114501764B (zh) * 2022-01-26 2024-02-09 江苏神州半导体科技有限公司 基于多线圈耦合的气体解离电路控制装置及系统

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Also Published As

Publication number Publication date
TW300323B (ko) 1997-03-11
JP3483327B2 (ja) 2004-01-06
KR100189220B1 (ko) 1999-06-01
US6436304B1 (en) 2002-08-20
JPH08153712A (ja) 1996-06-11

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