SE9601748D0 - A method and device for temperature dependet current generation - Google Patents

A method and device for temperature dependet current generation

Info

Publication number
SE9601748D0
SE9601748D0 SE9601748A SE9601748A SE9601748D0 SE 9601748 D0 SE9601748 D0 SE 9601748D0 SE 9601748 A SE9601748 A SE 9601748A SE 9601748 A SE9601748 A SE 9601748A SE 9601748 D0 SE9601748 D0 SE 9601748D0
Authority
SE
Sweden
Prior art keywords
currents
philosopy
current generation
domain
temperature depends
Prior art date
Application number
SE9601748A
Other languages
English (en)
Other versions
SE9601748L (sv
SE515345C2 (sv
Inventor
Nianxiong Tan
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9601748A priority Critical patent/SE515345C2/sv
Publication of SE9601748D0 publication Critical patent/SE9601748D0/sv
Priority to TW086105517A priority patent/TW342546B/zh
Priority to ES97922255T priority patent/ES2163153T3/es
Priority to EP97922255A priority patent/EP0900419B1/en
Priority to CA002253508A priority patent/CA2253508C/en
Priority to KR10-1998-0708820A priority patent/KR100446088B1/ko
Priority to DE69706671T priority patent/DE69706671T2/de
Priority to CN97194466A priority patent/CN1113282C/zh
Priority to PCT/SE1997/000725 priority patent/WO1997042556A1/en
Priority to JP53983897A priority patent/JP3828938B2/ja
Priority to US08/848,247 priority patent/US5942888A/en
Priority to AU27972/97A priority patent/AU2797297A/en
Publication of SE9601748L publication Critical patent/SE9601748L/sv
Priority to HK99105421A priority patent/HK1020292A1/xx
Publication of SE515345C2 publication Critical patent/SE515345C2/sv

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Semiconductor Lasers (AREA)
  • Control Of Eletrric Generators (AREA)
SE9601748A 1996-05-07 1996-05-07 Temperaturberoende strömalstring SE515345C2 (sv)

Priority Applications (13)

Application Number Priority Date Filing Date Title
SE9601748A SE515345C2 (sv) 1996-05-07 1996-05-07 Temperaturberoende strömalstring
TW086105517A TW342546B (en) 1996-05-07 1997-04-28 A method and device for temperature dependent current generation
AU27972/97A AU2797297A (en) 1996-05-07 1997-04-29 A method and device for temperature dependent current generation
DE69706671T DE69706671T2 (de) 1996-05-07 1997-04-29 Verfahren und vorrichtung zur temperaturabhängigen stromerzeugung
EP97922255A EP0900419B1 (en) 1996-05-07 1997-04-29 A method and device for temperature dependent current generation
CA002253508A CA2253508C (en) 1996-05-07 1997-04-29 A method and device for temperature dependent current generation
KR10-1998-0708820A KR100446088B1 (ko) 1996-05-07 1997-04-29 온도계수를갖는전류발생방법및시스템
ES97922255T ES2163153T3 (es) 1996-05-07 1997-04-29 Generador electrico termodependiente y procedimiento correspondiente.
CN97194466A CN1113282C (zh) 1996-05-07 1997-04-29 随温度变化的电流产生的方法和装置
PCT/SE1997/000725 WO1997042556A1 (en) 1996-05-07 1997-04-29 A method and device for temperature dependent current generation
JP53983897A JP3828938B2 (ja) 1996-05-07 1997-04-29 温度依存電流生成の方法および装置
US08/848,247 US5942888A (en) 1996-05-07 1997-04-29 Method and device for temperature dependent current generation
HK99105421A HK1020292A1 (en) 1996-05-07 1999-11-23 A method and device for temperature dependent current generation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9601748A SE515345C2 (sv) 1996-05-07 1996-05-07 Temperaturberoende strömalstring

Publications (3)

Publication Number Publication Date
SE9601748D0 true SE9601748D0 (sv) 1996-05-07
SE9601748L SE9601748L (sv) 1997-11-08
SE515345C2 SE515345C2 (sv) 2001-07-16

Family

ID=20402493

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9601748A SE515345C2 (sv) 1996-05-07 1996-05-07 Temperaturberoende strömalstring

Country Status (13)

Country Link
US (1) US5942888A (sv)
EP (1) EP0900419B1 (sv)
JP (1) JP3828938B2 (sv)
KR (1) KR100446088B1 (sv)
CN (1) CN1113282C (sv)
AU (1) AU2797297A (sv)
CA (1) CA2253508C (sv)
DE (1) DE69706671T2 (sv)
ES (1) ES2163153T3 (sv)
HK (1) HK1020292A1 (sv)
SE (1) SE515345C2 (sv)
TW (1) TW342546B (sv)
WO (1) WO1997042556A1 (sv)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10332494A (ja) * 1997-06-03 1998-12-18 Oki Data:Kk 温度検出回路、駆動装置及びプリンタ
US6326836B1 (en) * 1999-09-29 2001-12-04 Agilent Technologies, Inc. Isolated reference bias generator with reduced error due to parasitics
JP3638530B2 (ja) * 2001-02-13 2005-04-13 Ｎｅｃエレクトロニクス株式会社 基準電流回路及び基準電圧回路
JP3751966B2 (ja) * 2003-11-21 2006-03-08 日本テキサス・インスツルメンツ株式会社 サーマルシャットダウン回路
US7119527B2 (en) * 2004-06-30 2006-10-10 Silicon Labs Cp, Inc. Voltage reference circuit using PTAT voltage
KR100771884B1 (ko) * 2006-09-11 2007-11-01 삼성전자주식회사 온도 변화에 따른 비선형 특성을 제거할 수 있는 온도 센싱회로
US20080164567A1 (en) * 2007-01-09 2008-07-10 Motorola, Inc. Band gap reference supply using nanotubes
JP4340308B2 (ja) * 2007-08-21 2009-10-07 株式会社沖データ 基準電圧回路、駆動回路、プリントヘッドおよび画像形成装置
US8415940B2 (en) 2008-06-18 2013-04-09 Freescale Semiconductor, Inc. Temperature compensation circuit and method for generating a voltage reference with a well-defined temperature behavior
US7951678B2 (en) * 2008-08-12 2011-05-31 International Business Machines Corporation Metal-gate high-k reference structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473793A (en) * 1981-03-26 1984-09-25 Dbx, Inc. Bias generator
US4645948A (en) * 1984-10-01 1987-02-24 At&T Bell Laboratories Field effect transistor current source
US5068595A (en) * 1990-09-20 1991-11-26 Delco Electronics Corporation Adjustable temperature dependent current generator
IT1245237B (it) * 1991-03-18 1994-09-13 Sgs Thomson Microelectronics Generatore di tensione di riferimento variabile con la temperatura con deriva termica prestabilita e funzione lineare della tensione di alimentazione
EP0504983A1 (en) * 1991-03-20 1992-09-23 Koninklijke Philips Electronics N.V. Reference circuit for supplying a reference current with a predetermined temperature coefficient
US5334929A (en) * 1992-08-26 1994-08-02 Harris Corporation Circuit for providing a current proportional to absolute temperature
US5391980A (en) * 1993-06-16 1995-02-21 Texas Instruments Incorporated Second order low temperature coefficient bandgap voltage supply
JPH08509312A (ja) * 1994-02-14 1996-10-01 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 温度依存性が制御される基準回路
US5627456A (en) * 1995-06-07 1997-05-06 International Business Machines Corporation All FET fully integrated current reference circuit
JP3780030B2 (ja) * 1995-06-12 2006-05-31 株式会社ルネサステクノロジ 発振回路およびｄｒａｍ

Also Published As

Publication number Publication date
JP3828938B2 (ja) 2006-10-04
ES2163153T3 (es) 2002-01-16
TW342546B (en) 1998-10-11
DE69706671T2 (de) 2002-06-20
CA2253508A1 (en) 1997-11-13
SE9601748L (sv) 1997-11-08
AU2797297A (en) 1997-11-26
DE69706671D1 (de) 2001-10-18
WO1997042556A1 (en) 1997-11-13
EP0900419A1 (en) 1999-03-10
HK1020292A1 (en) 2000-04-07
CN1113282C (zh) 2003-07-02
CN1218560A (zh) 1999-06-02
SE515345C2 (sv) 2001-07-16
KR100446088B1 (ko) 2004-12-08
EP0900419B1 (en) 2001-09-12
JP2000509856A (ja) 2000-08-02
KR20000010718A (ko) 2000-02-25
CA2253508C (en) 2005-10-18
US5942888A (en) 1999-08-24

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