KR920003409A - 처리 가공시 가스 베이스 기판을 보호하는 장치 및 방법 - Google Patents

처리 가공시 가스 베이스 기판을 보호하는 장치 및 방법 Download PDF

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KR920003409A
KR920003409A KR1019910012092A KR910012092A KR920003409A KR 920003409 A KR920003409 A KR 920003409A KR 1019910012092 A KR1019910012092 A KR 1019910012092A KR 910012092 A KR910012092 A KR 910012092A KR 920003409 A KR920003409 A KR 920003409A
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gas
platen
substrate
shield
reactant
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KR970011643B1 (ko
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피.반드 벤 에버하드우스
케이. 브로드 벤트 엘리어트
씨. 벤징 제프레이
엘.친 베리
더블유. 불크하트 크리스토퍼
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죠셉 에프. 독스
노벨러스 시스템즈, 인코포레이티드
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
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Abstract

내용 없음

Description

처리 가공시 가스 베이스 기판을 보호하는 장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 화학적 증기 증착 시스템용 공정 연소실의 평면도.
제2도는 제1도의 공정 연소실의 측면도.

Claims (38)

  1. 공정 연소실내의 기판을 지지하기 위한 장치에 있어서, 페데스탈 베이스, 상기 페데스탈 베이스에 장착된 플래튼을 구비하는데, 상기 플래튼은 상기 플래튼의 하부면 및 가압 가스를 수용하기 위해 밀봉된 체적을 형성하는 상기 페데스탈 베이스의 내측 단면과, 내측 영역 및 주변 영역을 가진 상기 플래튼의 상부면과, 상기 주변 영역에 배치된 가스 홈을 구비하고, 상기 가스홈과 일체로 형성해서 상기 플래튼을 통해 상기 밀폐된 체적으로 연장하는 가스 라인을 구비하는 것을 특징으로 하는 공정 연소실내의 기판 지지 장치.
  2. 제1항에 있어서, 가압 가스를 상기 밀폐된 체적으로 유도하기 위한 가압 가스 소오스를 추가로 구비하는 것을 특징으로 하는 장치.
  3. 제2항에 있어서, 상기 가압 가스는 불활성 가스, 불활성 가스의 혼합물, 및 불활성 가스와 반응물 가스의 혼합물로부터 선택되는 것을 특징으로 하는 장치.
  4. 제1항에 있어서, 상기 밀봉된 체적내의 상기 하부 플래튼상에 가열 소자가 장착되고 상기 페데스탈 베이스는 상기 가열 소자를 덮는 베이스 플레이트를 구비하는 것을 특징으로 하는 장치.
  5. 제1항에 있어서, 상기 페데스탈 베이스는 중공원통형 페데스탈을 구비하고, 그의 내면은 상기 밀봉된 체적의 일부분을 형성하며 그의 단부는 가압 가스를 상기 밀봉된 체적에 유도하는 오리피스를 가진 것을 특징으로 하는 장치.
  6. 공정 연소실내의 기판을 지지하기 위한 장치에 있어서, 페데스탈 베이스와, 상기 페데스탈 베이스상에 장착되어, 상부면의 내측 영역내의 진공홈 및 상부면의 주변 영역내의 가스홈을 가진 플래튼과, 진공은 상기 진공홈에 제공하기 위해 상기 진공홈과 일체로 형성된 진공 라인과, 가스를 상기 가스홈에 제공하기 위해 상기 가스홈과 일체로 형성된 가스 라인을 구비하는 것을 특징으로 하는 공정 연소실내의 기판 지지 장치.
  7. 제1항 또는 제6항에 있어서, 상기 플래튼의 주변 상부면 영역은 상기 플래튼의 내측 상부면 영역에 대해 감압되는 것을 특징으로 하는 장치.
  8. 제1항 또는 제6항에 있어서, 상기 가스 라인은 상기 플래튼을 통해 연장하는 것을 특징으로 하는 장치.
  9. 제1항 또는 제6항에 있어서, 상기 플래튼은 원형이고 상기 가스홈은 환형홈을 구비하는 것을 특징으로 하는 장치.
  10. 제9항에 있어서, 상기 가스 라인은 상기 플래튼의 하부면에서 배향하고 환형 부분 각각에서 상기 가스홈을 교차하는 복수의 보어를 구비하는 것을 특징으로 하는 장치.
  11. 제10항에 있어서, 상기 가스 라인 보어는 상기 제1단면내의 상기 플래튼 하부면으로부터 배향하고 최소한의 상기 플래튼 하부면의 제1단면과 상기 페데스탈 베이스의 내측면은 가압 가스를 수신하기 위해 밀봉된 체적을 형성하고 상기 보어는 상기 밀봉된 체적과 소통되는 것을 특징으로 하는 장치.
  12. 제6항에 있어서, 상기 진공 라인은 상기 플래튼을 통해 연장하는 것을 특징으로 하는 장치.
  13. 제6항에 있어서, 상기 플래튼은 원형이고 상기 진공홈은 통합된 반경의 네트워크와 환형홈 단면을 구비하는 것을 특징으로 하는 장치.
  14. 제13항에 있어서, 상기 진공 라인은 상기 플래튼을 통과한 수직 보어를 구비하고, 상기 진공홈의 환형홈 단면은 상기 상부 플래튼 표면을 가진 상기 수직 보어의 교차점으로부터 분리되는 것을 특징으로 하는 장치.
  15. 제14항에 있어서, 상기 플래튼의 하부면을 가진 상기 수직 보어의 교차점에서 상기 수직 보어에 일단부가 연결된 튜브를 추가로 구비하고 상기 튜브는 진공 시스템에 연결하기 위해 대향 단부에 연결된 진공 고정구를 가진 것을 특징으로 하는 장치.
  16. 제1항,제6항 또는 제7항에 있어서, 상기 제2표면을 에워싸고 상기 플래튼 주변 영역의 연속적인 제1부분을 접촉하도록 구성되고 상기 제2표면 영역은 제1차폐 표면 영역이 상기 제1플래튼 주변 영역 부분과 접촉할때 상기 플래튼 주변 영역의 제2부분과 결합하여 공동을 형성하도록 구성되고, 상기 공동은 배면 주변 영역, 에지 및 기판의 정면 주변 영역이 상기 플래튼에 장착될때 에워싸여지도록 구성된 차폐부와, 상기 플래튼에 대하여 상기 차폐부를 가하는 수단을 추가로 구비하는 것을 특징으로 하는 장치.
  17. 제16항에 있어서, 상기 차폐부는 환형적으로 경감된 내측 저면 부분을 가진 환형 부재이고, 상기 제2표면 영역은 상기 환형적으로 경감된 부분에 대응하고 상기 제1표면 영역은 상기 환형 부재의 저면에 대응하는 것을 특징으로 하는 장치.
  18. 제17항에 있어서, 상기 플래튼의 주변 상부 영역은 상기 플래튼의 내측 상부면 영역에 대해 감압되는 것을 특징으로 하는 장치.
  19. 제18항에 있어서, 상기 환형적으로 감소된 부분은 환형 스텝인 것을 특징으로 하는 장치.
  20. 제9항, 제10항 또는 제11항에 있어서, 상기 플래튼 상부 표면 주변 영역의 일부분을 접촉하는 평탄한 부면, 그의 중심부에 방사상으로 돌출하고 상기 하부면의 평탄으로부터 융기해서 배면 주변 영역을 에워싸는 공동에 상기 플래튼 상부면 주변 영역을 연결해서 형성된 일부분, 상기 플래튼상에 장착될때 상기 기판의 에지 및 정면 주변 영역을 가진 환형 시라우드와, 상기 플래튼에 대해서 상기 시라우드를 가하는 수단을 구비하는 것을 특징으로 하는 장치.
  21. 제20항에 있어서, 상기 시라우드를 상기 플래튼과 정렬시키는 수단을 추가로 구비하는 것을 특징으로 하는 장치.
  22. 제21항에 있어서, 상기 정렬 수단은 상기 시라우드 하부면과 상기 플래튼 상부면 주변 영역과 결합되는 최소한 2개의 핀 호울 쌍을 구비하는 것을 특징으로 하는 장치.
  23. 제21항에 있어서, 상기 정렬 수단은 상기 시라우드 하부면과 상기 플래튼 상부면 주변 영역과 결합되는 에지 슬롯 쌍을 구비하는 것을 특징으로 하는 장치.
  24. 제21항에 있어서, 상기 정렬 수단은 상기 시라우드와 결합된 최소한 3개의 플랜지를 구비해서 그의 하부면 밑으로 연장하고 상기 플랜지는 상기 플래튼의 외측 에지와 점진적으로 계합하도록 구성되는 것을 특징으로 하는 장치.
  25. 증착 연소실에서 처리하는 기판을 지지하기 위한 장치에 있어서, 기판 지지기를 가진 플래튼을 구비하는데, 상기 기판 지지기는 기판을 상기 플래튼에 유지시키고 상기 기판 지지기는 상기 플래튼의 표면 영역에 대해서 기판의 배면 주변부를 밀봉하는데 부적합하고, 상기 플래튼 주변 표면 영역을 따라 배측면 가스를 유도하기위해 상기 플래튼 주변 표면에 배치된 가스 분산기와 상기 플래튼 주변 표면 영역의 밀봉형 접점 부분을 접촉하기 위한 밀봉형 접점 부분과 상기 밀봉 접점 부분에 의해 밀봉된 폐쇄식 경감 부분을 가진 저면과, 기판 정면 주변부에 대응하는 상기 경감 부분의 폭 및 기판 두께에 대응하는 상기 겸감 부분의 깊이를 가진 차폐부와, 상기 차폐부를 선택적으로 하강시켜 상기 차폐 밀봉형 접점 부분 및 상기 플래튼 밀봉형 접점 부분을 따라 계합하고 상기 차폐부를 상기 플래튼의 계합부로부터 돌출시키는 위치 설정기를 구비하는 것을 특징으로 하는 기판 지지 장치.
  26. 제25항에 있어서, 상기 플래튼 및 상기 차폐부는 환형이고 상기 차폐 감소 부분은 환형 스텝인 것을 특징으로 하는 기판 지지 장치.
  27. 제26항에 있어서, 상기 차폐부의 외측 직경은 환형 오버행을 형성하기 위해 상기 플래튼의 외측 직경보다 크고, 상기 위치 설정기는 상기 플래튼 외측 직경보다 크며 상기 차폐 외측 직경보다 작은 반원형 직경의 도려낸 부분을 가진 이동 가능한 플레이트를 구비하고, 상기 차폐부 상기 플래튼 및 상기 도려낸 부분은 동축이고 상기 플레이트는 상기 도려낸 부분의 주변을 따라 상기 차폐부와 접촉하도록 구성된 것을 특징으로 하는 기판 지지 장치.
  28. 처리 동안 공정 연소실내에 배치된 기판의 배측면을 보호하기 위한 방법에 있어서, 기판을 보호하는 단계와, 소정의 압력에서 제1반응물 가스와 캐리어 가스의 혼합물을 구비하는 프로세스 가스를 상기 공정 연소실 내로 유도하는 단계와, 제2반응물 가스와 불활성 가스의 혼합물을 구비하는 배측면 가스를 기판 배측면의 주변부로 유도하는 단계와, 기판 배측면의 주변부에서의 압력과 공정 연소실내의 압력간의(+) 압력을 유지하는 단계를 구비하는 것을 특징으로 하는 기판의 배측면 보호방법.
  29. 제28항에 있어서, 상기 기판은 플래튼에 배치되고 상기 기판 보호단계는 상기 플래튼을 통해 기판의 배측면에 진공도를 가하는 단계를 구비하는 것을 특징으로 하는 방법.
  30. 제28항 또는 제29항에 있어서, 상기 기판 배측면, 기판의 에지 및 기판 정면의 주변부를 포함하기 위해 공동을 통해 상기 배측면 가스를 지향시키는 단계와, 상기 공동내에서 공정 연소실 까지의(+) 압력차이를 유지시키는 단계를 구비하는 것을 특징으로 하는 방법.
  31. 제28항, 제29항 또는 제30항에 있어서, 상기 프로세스 가스는 생성 반응물의 혼합물, 상기 제1반응물 가스, 및 상기 기판의 중심부에서 소정의 결과에 대해 최적화된 상기 캐리어 가스를 구비하고, 상기 제1 및 제2반응물 가스는 동일한 형태의 가스이고, 상기 배측면 가스 유도 단계는, 상기 배측면 가스내에서 상기 제2반응물 가스대 상기 불활성 가스의 비를 상기 프로세스 가스내에서 상기 제1반응물 가스대 상기 캐리어 가스비와 동일하게 되도록 초기에 설정하는 단계와, 상기 배측면 가스내에서 상기 제2반응물 가스대 불활성 가스를 변화하게 유도하는 단계 및 복수의 시험 웨이퍼를 동일하게 교차해서 증착을 조정하는 단계와, 시험 웨이퍼를 따라 동일하게 교차해서 양호한 증착을 산출하기 위해 배측면 내에서 상기 제2반응물 가스대 상기 불활성 가스의 변화비중 하나의 비를 선택하는 단계를 구비하는 것을 특징으로 하는 방법.
  32. 제31항에 있어서, 상기 캐리어 가스 및 상기 불활성 가스는 동일한 가스 형태로 구성되는 것을 특징으로 하는 방법.
  33. 제32항에 있어서, 상기 캐리어 가스 및 상기 불활성 가스는 아르곤인 것을 특징으로 하는 방법.
  34. 제32항에 있어서, 상기 캐리어 가스 및 상기 불활성 가스는 아르곤 및 질소의 혼합물인 것을 특징으로 하는 방법.
  35. 제28항, 제29항 또는 제30항에 있어서, 상기 프로세스 가스는 WF6의 생성 반응물, 수소의 반응물 가스 및 아르곤의 캐리어 가스를 구비하고 상기 배측면 가스는 수소의 반응물 가스와 아르곤의 불활성 가스를 구비하는 것을 특징으로 하는 방법.
  36. 제28항, 제29항 또는 제30항에 있어서, 상기 프로세스 가스는 WF6의 생성 반응물, 수소 반응물 가스 및 아르곤과 질소의 캐리어 가스를 구비하고, 상기 배측면 가스는 수소의 반응물 가스와 아르곤 및 질소의 불활성 가스를 구비하는 것을 특징으로 하는 방법.
  37. 제28항, 제29항 또는 제30항에 있어서, 상기 불활성 가스는 열 가스인 것을 특징으로 하는 방법.
  38. 제28항, 제29항 또는 제30항에 있어서, 상기 불활성 가스는 아르곤, 질소, 헬륨, 프레온C2F6또는 소정의 그의 합성물을 포함하는 그룹으로 부터 선택되는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910012092A 1990-07-16 1991-07-16 처리 가공시 가스 베이스 기판을 보호하는 장치 및 방법 KR970011643B1 (ko)

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US554,225 1990-07-16
US07/554,225 US5230741A (en) 1990-07-16 1990-07-16 Gas-based backside protection during substrate processing
US678579 1991-03-25
US678,579 1991-03-25
US07/678,579 US5238499A (en) 1990-07-16 1991-03-25 Gas-based substrate protection during processing

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JPH04233221A (ja) 1992-08-21
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