KR890702414A - 프라즈마 cvd에 의한 박막형성방법 및 그 장치 - Google Patents

프라즈마 cvd에 의한 박막형성방법 및 그 장치

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KR890702414A
KR890702414A KR1019890700595A KR890700595A KR890702414A KR 890702414 A KR890702414 A KR 890702414A KR 1019890700595 A KR1019890700595 A KR 1019890700595A KR 890700595 A KR890700595 A KR 890700595A KR 890702414 A KR890702414 A KR 890702414A
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source gas
gas outlet
electrode
thin film
high frequency
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KR1019890700595A
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KR930003136B1 (ko
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유끼오 고오무라
요시노리 이시다
다구야 니시모도
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구사가베 엣지
후루가와덴기 고오교오 가부시기가이샤
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Priority claimed from JP62257429A external-priority patent/JPH0719755B2/ja
Priority claimed from JP25743087A external-priority patent/JPH07118460B2/ja
Priority claimed from JP62288325A external-priority patent/JPH01130517A/ja
Priority claimed from JP19454887U external-priority patent/JPH058673Y2/ja
Priority claimed from JP62325748A external-priority patent/JPH01168021A/ja
Application filed by 구사가베 엣지, 후루가와덴기 고오교오 가부시기가이샤 filed Critical 구사가베 엣지
Publication of KR890702414A publication Critical patent/KR890702414A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

프라즈마 CVD에 의한 박막형성방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 실시예 1의 프라즈마 CVD 장치의 전기계통 구성예시도.

Claims (17)

  1. 진공반응용 기내에 소정의 간격을 두고 서로 마주하게 대설된 원료가스 유출전극 사이에, 피처리체를 설치하는 공정과, 상기 원료가스 유출전극에서 상기 피처리체에 원료가스를 유출시키면서, 상기 원료가스 유출전극을 접지하여 상기 피처리체에 소정의 고주파 전력을 인가하는 공정과, 상기 고주파 전력에 의하여 상기 원료가스로부터 발생한 프라즈마에 의하여 상기 피처리체에 박막을 형성하는 공정과를 구비한 프라즈마 CVD에 의한 박막형성방법.
  2. 제1항에 있어서, 원료가스 유출전극은 3개 이상이고, 이웃한 이 원료가스 유출전극 사이에 피처리체가 각각 설치하는 프라즈마 CVD에 의한 박막형성방법.
  3. 제1항에 있어서, 원료가스는 각 원료가스 유출전극의 대향면에 형성된 다수개의 원료가스 유출구멍에서 유출되는 프라즈마 CVD에 의한 박막형성방법.
  4. 제1항에 있어서, 피처리체는, 자기디스크 소재인 프라즈마 CVD에 의한 박막형성방법.
  5. 진공반응을 용기내에 소정간격을 두고 서로 마주하게 원료가스 유출전극이 대설되고 또 이 원료가스 유출전극간의 공간영역에 소정간격을 두고 대설된 통전전극의 사이의 영역에 피처리체를 설치하는 공정과, 상기 원료가스 유출전극에서 상기 피처리체에 원료가스를 유출하면서, 상기 원료가스 유출전극을 접지하여 상기 통전전극에 소정의 고주파 전력을 인가하는 공정과, 상기 고주파 전력에 의하여, 상기 원료가스에서 발생한 프라즈마에 의하여 상기 피처리체에 박막을 형성하는 공정과를 구비한 프라즈마 CVD에 의한 박막형성방법.
  6. 제5항에 있어서, 통전전극이 메슈전극으로 형성되어 있는 프라즈마 CVD에 의한 박막형성방법.
  7. 진공반응용기내에 소정간격을 두고서로 마주하게 대설된 원료가스 유출전극과, 이 원료가스 유출전극에 접속된 원료가스 유출수단과, 이 원료가스 유출수단간의 소정위치에 설치되는 피처리체를 지지하는 지지수단과, 상기 원료가스 유출수단을 접지하여 상기 피처리체에 소정의 고주파 전력을 인가하는 고주파전력 인가수단과를 구비한 프라즈마 CVD에 의한 박막형성방법.
  8. 제7항에 있어서, 원료가스 유출전극은 3개 이상이며, 이웃한 이 원료가스 유출전극 사이에 피처리체를 지지하는 지지수단이 형성되어 있는 프라즈마 CVD에 의한 박막형성방법.
  9. 제7항에 있어서, 각 원료가스 유출전극의 대향면에 다수개의 원료가스 유출구멍이 형성되는 프라즈마 CVD에 의한 박막형성방법.
  10. 제7항에 있어서, 지지수단은 통전전극이고,고주파 전력인가 수단은, 이 지지수단을 통하여 피처리체에 고주파 전력을 인가하는 프라즈마 CVD에 의한 박막형성장치.
  11. 진공반응용 기내에 소정간격을 두고 서로 마주하게 대설된 원료가스 유출전극과,이 원료가스 유출전극에 접속된 원료가스 유출수단과, 이 원료가스 유출전극간의 소정위치에 설치되는 피처리체를 지지하는지지 수단과, 상기 원료가스 유출전극을 접지하여 상기 피처리체에 소정의 고주파 전력을 인가하는 고주파전력 인가수단과, 이피처리체의 두께에 대체로 같은 두께를 가지고 이피처리체의 중심구멍에 끼워맞출 끼워맞춤 원판과, 이 끼워맞춤 원판의 외주부에 조입되어 이 끼워맞춤 원판을 상기 피처리체에 지지시키는 넓은 지름의 걸어불임수단으로된 인너워크홀더를 구비한 프라즈마 CVD에 의한 박막형성장치.
  12. 제11항에 있어서, 넓은 지름의 걸어불임수단은, 탄발압에 의하여 끼워맞춤 원판을 피처리체에 지지시키는 프라즈마 CVD에 의한 박막형성장치.
  13. 제11항에 있어서, 피처리체는 자기디스크 소재인 프라즈마 CVD에 의한 박막형성장치.
  14. 진공반응 용기내에 소정간격을 형성하여 서로 마주하게 대설된 원료가스 유출전극과, 이원료가스 유출전극에 접속된 원료가스 유출 수단과, 이 원료가스 유출전극 사이의 소정위치에 설치될 피처리체를 지지하는 지지수단과, 상기 원료가스 유출전극을 접지하여 상기 피처리체에 소정의 고주파 전력을 인가하는 고주파 전력인가수단과, 상기 피처리체의 의주에 따른 부분에 상기 피처리체의 두께와 대체로 같은 두께의 균일 두께부분이 접하며, 또 이피처리체의 양면을 노출시킨 상태에서 상기 피처리체를 지지하는 고리상의 아웃터워크홀더 본체와를 구비한 프라즈마 CVD에 의한 박막형성장치.
  15. 제14항에 있어서, 피처리체는, 자기디스크 소재인 프라즈마 CVD에 의한 박막형성장치
  16. 진공반응 용기내에 소정간격을 두고 서로 마주하여 대설된 원료가스 유출전극과, 이원료가스 유출전극에 접속된 원료가스 유출수단과, 이 원료가스 유출전극 사이의 공간영역에 소정간격을 두고 대설된 통전전극과, 이 통전전극 사이의 소정위치에 설치되는 피처리체를 지지하는 지지수단과, 상기 원료가스 유출전극을 접지하여 상기 통전전극에 소정의 고주파전력을 인가하는 고주파 전력 인가 수단과를 구비한 프라즈마 CVD에 의한 박막형성장치
  17. 제16항에 있어서, 통전전극은 메슈전극인 프라즈마 CVD에 의한 박막형성.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890700595A 1987-10-14 1988-10-14 프라즈마 cvd에 의한 박막 형성장치 KR930003136B1 (ko)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP62257429A JPH0719755B2 (ja) 1987-10-14 1987-10-14 プラズマｃｖｄによる薄膜形成方法
JP257429 1987-10-14
JP257430 1987-10-14
JP25743087A JPH07118460B2 (ja) 1987-10-14 1987-10-14 プラズマｃｖｄ装置
JP62288325A JPH01130517A (ja) 1987-11-17 1987-11-17 プラズマｃｖｄ装置
JP288325 1987-11-17
JP194548 1987-12-22
JP194548(U) 1987-12-22
JP19454887U JPH058673Y2 (ko) 1987-12-22 1987-12-22
JP325748 1987-12-23
JP62325748A JPH01168021A (ja) 1987-12-23 1987-12-23 アウターワークホルダー
PCT/JP1988/001043 WO1989003587A1 (en) 1987-10-14 1988-10-14 Method and apparatus for thin film formation by plasma cvd

Publications (2)

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KR890702414A true KR890702414A (ko) 1989-12-23
KR930003136B1 KR930003136B1 (ko) 1993-04-22

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US (1) US4991542A (ko)
EP (1) EP0336979B1 (ko)
KR (1) KR930003136B1 (ko)
WO (1) WO1989003587A1 (ko)

Families Citing this family (150)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3931713C1 (ko) * 1989-09-22 1991-03-14 Balzers Ag, Balzers, Li
US5580384A (en) * 1989-09-22 1996-12-03 Balzers Aktiengesellschaft Method and apparatus for chemical coating on opposite surfaces of workpieces
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method
US6001432A (en) * 1992-11-19 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Apparatus for forming films on a substrate
US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
US6001431A (en) * 1992-12-28 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating a magnetic recording medium
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
KR980009048A (ko) * 1996-07-30 1998-04-30 아마노 히로시 랩필름 수납 상자
DE19635736C2 (de) 1996-09-03 2002-03-07 Saxonia Umformtechnik Gmbh Diamantähnliche Beschichtung
US6203862B1 (en) * 1998-05-13 2001-03-20 Intevac, Inc. Processing systems with dual ion sources
JP4496401B2 (ja) * 2000-09-14 2010-07-07 三菱電機株式会社 プラズマｃｖｄ装置および太陽電池の製造方法
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20110104381A1 (en) * 2004-01-15 2011-05-05 Stefan Laure Plasma Treatment of Large-Scale Components
KR100519778B1 (ko) * 2004-01-30 2005-10-07 삼성전자주식회사 양면 코팅용 플라즈마 ｃｖｄ 장치 및 플라즈마 ｃｖｄ 방법
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
CN101156504B (zh) * 2005-04-11 2012-07-18 洛尔等离子技术有限公司 等离子喷涂设备及方法
US20090165714A1 (en) * 2008-01-01 2009-07-02 Dongguan Anwell Digital Machinery Ltd. Method and system for processing substrates in chambers
US20090169341A1 (en) * 2008-01-01 2009-07-02 Dongguan Anwell Digital Machinery Ltd. Method and system for handling objects in chambers
US8551578B2 (en) * 2008-02-12 2013-10-08 Applied Materials, Inc. Patterning of magnetic thin film using energized ions and thermal excitation
US8535766B2 (en) * 2008-10-22 2013-09-17 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
US20090199768A1 (en) * 2008-02-12 2009-08-13 Steven Verhaverbeke Magnetic domain patterning using plasma ion implantation
US20090201722A1 (en) * 2008-02-12 2009-08-13 Kamesh Giridhar Method including magnetic domain patterning using plasma ion implantation for mram fabrication
JP5164107B2 (ja) * 2008-07-01 2013-03-13 株式会社ユーテック プラズマｃｖｄ装置、薄膜の製造方法及び磁気記録媒体の製造方法
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
CN108349788A (zh) 2015-08-21 2018-07-31 康宁股份有限公司 加工玻璃的方法和设备
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4317844A (en) * 1975-07-28 1982-03-02 Rca Corporation Semiconductor device having a body of amorphous silicon and method of making the same
JPS591671A (ja) * 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS60218826A (ja) * 1984-04-13 1985-11-01 Fujitsu Ltd 薄膜形成方法
JPS616277A (ja) * 1984-06-20 1986-01-11 Canon Inc プラズマｃｖｄ装置
JPH0694591B2 (ja) * 1984-06-29 1994-11-24 ミノルタカメラ株式会社 プラズマｃｖｄ装置
US4668365A (en) * 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US4618477A (en) * 1985-01-17 1986-10-21 International Business Machines Corporation Uniform plasma for drill smear removal reactor

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