KR920017193A - 종형 처리 장치 - Google Patents

종형 처리 장치 Download PDF

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Publication number
KR920017193A
KR920017193A KR1019920001629A KR920001629A KR920017193A KR 920017193 A KR920017193 A KR 920017193A KR 1019920001629 A KR1019920001629 A KR 1019920001629A KR 920001629 A KR920001629 A KR 920001629A KR 920017193 A KR920017193 A KR 920017193A
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KR
South Korea
Prior art keywords
reaction tube
processing apparatus
electrode
vertical processing
vertical
Prior art date
Application number
KR1019920001629A
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English (en)
Other versions
KR0167571B1 (ko
Inventor
시게로 한다
요이치 구로노
Original Assignee
이노우에 아키라
도오교도 에레구토론 가부시기가이샤
이노우에 다케시
도오교오 에레구코론 사가미 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 이노우에 아키라, 도오교도 에레구토론 가부시기가이샤, 이노우에 다케시, 도오교오 에레구코론 사가미 가부시끼가이샤 filed Critical 이노우에 아키라
Publication of KR920017193A publication Critical patent/KR920017193A/ko
Application granted granted Critical
Publication of KR0167571B1 publication Critical patent/KR0167571B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/912—Differential etching apparatus having a vertical tube reactor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음

Description

종형 처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 1상태의 관계되는 종형처리 장치를 나타낸 종단면도, 제2도는 제1도에 나타낸 장치의 횡단면도, 제3도는 플라즈마 발생 전극에 대한 고주파 전원 접속 방법의 다른 예를 나타낸 도면.

Claims (11)

  1. 연직으로 배치되어, 다수의 피처리체가 장입되는 반응관(11)가; 이 반응관(11)내에 피처리체를 덮어 씌우듯이 설치되어, 플라즈마중 활성종 래디칼이 선택적으로 통과 하도록 형성된 여러 개의 구멍(13)을 가지는 내관(12)과; 반응관(11)과 내관(12)사이에 반응가스를 공급하기 위한 반원가스 공급수단과;반응관(11)바깥쪽에 설치되어, 반응관(11)과, 내관(13)과의 사이에만 반응가스의 플라즈마를 발생시키기 위한 전극수단과; 를 구비한 종형 열처리 장치.
  2. 제1항에 있어서 상기 전극 수단은 여러개의 전극 쌍을가지고 있는 종형처리장치.
  3. 제2항에 있어서 상기 여러개의 전극 쌍은 고주파 전극인 종형처리 장치.
  4. 제3항에 있어서 상기 전극쌍을 구성하는 각 전극은 상기 반응관(11)에 대하여 동심적으로 상기 반응관(11)을 둘러싼 링 형상을 이루고 있는 종형처리 장치.
  5. 제4항에 있어서 상기 여러개의 전극쌍은 각각 다른 전원에 접속되어 있는 종형처리장치.
  6. 제3항에 있어서 상기 전극쌍을 구성하는 각 전극은 상기 반응관(11)주위를 따라 동시에 연직으로 설치되어 있는 종형처리 장치.
  7. 제1항에 있어서 상기반응가스 공급수단은 상기 반응관(11)과 상기 내관(13)사이에 수직으로 뻗어 있는 가스공급관을 가지고 있는 종형처리장치.
  8. 제7항에 있어서 상기 반응관은 상기 내관에 대향한 위치에 여러개의 가스 유출 구멍를 가지고, 있는 종형처리장치.
  9. 제1항에 있어서 상기 피처리체는 판형상을 이루고 여러개의 피처리체가 그 면을 수평으로 한 상태로 수직방향을 따라 지지부재에 적층 지지되어 있는 종형처리장치.
  10. 제9항에 있어서, 상기 지지부재를 회전 시키는 회전 수단을 그 위에 가지고 있는 종형처리장치.
  11. 제1항에 있어서, 상기 가열 수단은 수직 방향을 따라 여러개의 가열영역으로 분할되어 있는 종형처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019920001629A 1991-02-19 1992-02-01 종형 처리장치 KR0167571B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-46042 1991-02-19
JP03046042A JP3115015B2 (ja) 1991-02-19 1991-02-19 縦型バッチ処理装置

Publications (2)

Publication Number Publication Date
KR920017193A true KR920017193A (ko) 1992-09-26
KR0167571B1 KR0167571B1 (ko) 1999-02-01

Family

ID=12735975

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920001629A KR0167571B1 (ko) 1991-02-19 1992-02-01 종형 처리장치

Country Status (3)

Country Link
US (1) US5217560A (ko)
JP (1) JP3115015B2 (ko)
KR (1) KR0167571B1 (ko)

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Also Published As

Publication number Publication date
JP3115015B2 (ja) 2000-12-04
KR0167571B1 (ko) 1999-02-01
JPH04264715A (ja) 1992-09-21
US5217560A (en) 1993-06-08

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