KR920001657A - 이온 주입장치 - Google Patents

이온 주입장치 Download PDF

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Publication number
KR920001657A
KR920001657A KR1019900009294A KR900009294A KR920001657A KR 920001657 A KR920001657 A KR 920001657A KR 1019900009294 A KR1019900009294 A KR 1019900009294A KR 900009294 A KR900009294 A KR 900009294A KR 920001657 A KR920001657 A KR 920001657A
Authority
KR
South Korea
Prior art keywords
ion
ion implanter
gas
outside
source
Prior art date
Application number
KR1019900009294A
Other languages
English (en)
Other versions
KR0141475B1 (ko
Inventor
시게히토 이부카
히사시 곤도오
시게루 사가미
코오지 가도
Original Assignee
고다까 토시오
도오교오 에레구토론 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고다까 토시오, 도오교오 에레구토론 가부시끼가이샤 filed Critical 고다까 토시오
Publication of KR920001657A publication Critical patent/KR920001657A/ko
Application granted granted Critical
Publication of KR0141475B1 publication Critical patent/KR0141475B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음

Description

이온 주입장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 본 발명의 1실시예의 이온 주입장치의 구성을 나타내는 개략 평면도.
제2도는, 제1도에 나타낸 이온 주입장치의 개략 측면도이다.

Claims (2)

  1. 이온원에서 소정의 원료가스로부터 이온을 발생시키고, 이 이온을 비임 상태로 하여 피처리들에 조사 하도록 구성된 이온 주입장치에 있어서, 상기 이온원(6)에, 이온 주입장치의 외부에 설치한 가스 봄베(21)로부터 상기 원료가스를 공급하도록 구성한 것을 특징으로 하는 이온 주입장치.
  2. 제1항에 있어서, 이온 주입장치의 이온원(6)을 둘러싸는 기기와 외부를 전기적으로 격리하기 위한 인클로우저(17)와 외부를 접속하는 배기용 덕트(18)안에 가스 공급용 배관(20)을 설치한 이온 주입장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900009294A 1989-06-29 1990-06-22 이온 주입장치 KR0141475B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP168088 1989-06-29
JP1168088A JP2724503B2 (ja) 1989-06-29 1989-06-29 イオン注入装置

Publications (2)

Publication Number Publication Date
KR920001657A true KR920001657A (ko) 1992-01-30
KR0141475B1 KR0141475B1 (ko) 1998-07-15

Family

ID=15861623

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900009294A KR0141475B1 (ko) 1989-06-29 1990-06-22 이온 주입장치

Country Status (3)

Country Link
US (1) US5070275A (ko)
JP (1) JP2724503B2 (ko)
KR (1) KR0141475B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515290B1 (en) * 2000-09-05 2003-02-04 Axcelis Technologies, Inc. Bulk gas delivery system for ion implanters
JP4695911B2 (ja) * 2005-03-31 2011-06-08 株式会社Ｓｅｎ 絶縁配管部材、ガス供給装置およびイオンビーム装置
US9212785B2 (en) 2012-10-11 2015-12-15 Varian Semiconductor Equipment Associates, Inc. Passive isolation assembly and gas transport system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS521399A (en) * 1975-06-24 1977-01-07 Toshiba Corp The fixation treatment method of a radioactive gas and its device
JPS6037642A (ja) * 1983-08-10 1985-02-27 Hitachi Ltd イオン打込装置用質量分離器
US4560879A (en) * 1983-09-16 1985-12-24 Rca Corporation Method and apparatus for implantation of doubly-charged ions
US4881010A (en) * 1985-10-31 1989-11-14 Harris Semiconductor Patents, Inc. Ion implantation method and apparatus
JP2530434B2 (ja) * 1986-08-13 1996-09-04 日本テキサス・インスツルメンツ株式会社 イオン発生装置
US4782304A (en) * 1986-08-20 1988-11-01 Applied Materials, Inc. Systems and methds for ion beam acceleration
JPS63276757A (ja) * 1987-05-08 1988-11-15 Mitsubishi Electric Corp 記憶装置
US4893019A (en) * 1987-05-27 1990-01-09 Mitsubishi Denki Kabushiki Kaisha Ion current generator system for thin film formation, ion implantation, etching and sputtering

Also Published As

Publication number Publication date
JPH0334245A (ja) 1991-02-14
KR0141475B1 (ko) 1998-07-15
US5070275A (en) 1991-12-03
JP2724503B2 (ja) 1998-03-09

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