KR970013106A - 매엽식 열처리장치 - Google Patents

매엽식 열처리장치 Download PDF

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KR970013106A
KR970013106A KR1019960032129A KR19960032129A KR970013106A KR 970013106 A KR970013106 A KR 970013106A KR 1019960032129 A KR1019960032129 A KR 1019960032129A KR 19960032129 A KR19960032129 A KR 19960032129A KR 970013106 A KR970013106 A KR 970013106A
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heat treatment
single wafer
treatment apparatus
gas
heating
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KR1019960032129A
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KR100403078B1 (ko
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준이치 아라미
히로노리 야기
가즈츠구 아오키
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히가시 데츠로우
도쿄 일렉트론 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Furnace Details (AREA)

Abstract

본 발명은 단열성 부재의 위에 지지된 재치대에 재치한 피처리체를 그 아래쪽에 설치한 가열램프로 간접 가열하여 열처리를 행하는 매엽식 열처리장치에 있어서, 재치대의 이면의 주연부에 이 재치대의 이면에 처리가스가 돌아 들어가는 것을 방지하기 위한 가스침입 방지부재를 설치하도록 구성한다. 이로 인해, 재치대의 이면측에 침입하려던 가스침입 방지부재의 표면에 성막이 부착하는 것에 의해 소비된다.

Description

매엽식 열처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 매엽식 열처리장치의 종단면도

Claims (12)

  1. 단열성 부재의 위에 지지된 재치대상에 재치한 피처리체를 재치대의 아래쪽에 배열설치한 가열램프에 의해 간접 가열하여 열처리를 행하는 매엽식 열처리장치에 있어서, 상기 재치대의 이면의 주연부에 그 재치대의 이면측에 처리가스가 돌아 들어가는 것을 방지하기 위한 가스침입 방지부재를 설치하도록 구성된 것을 특징으로 하는 매엽식 열처리장치.
  2. 제1항에 있어서, 상기 가스침입 방지부재가 상기 주연부에 따라 형성된 소정 길이의 원통상부재인 것을 특징으로 하는 매엽식 열처리장치.
  3. 제1항에 있어서, 상기 가스침입 방지부재가 상기 단열부재의 외측에 동심으로 배치되는 양자의 사이에 근소한 간극이 형성되어 있는 것을 특징으로 하는 매엽식 열처리장치.
  4. 단열성 부재의 위에 지지된 재치대상에 재치한 피처리체를 재치대의 아래쪽에 배열설치한 가열램프에 의해 간접 가열하여 열처리를 행하는 매엽식 열처리장치에 있어서, 재치대의 이면측에 처리가스가 돌아 들어가는 것을 방지하기 위해 불활성가스를 공급하는 불활성가스 공급수단을 설치하도록 구성된 것을 특징으로 하는 매엽식 열처리장치.
  5. 제4항에 있어서, 상기 재치대의 이면의 주연부에 이 재치대의 이면에 처리가스가 돌아 들어가는 것을 방지하기 위한 가스침입 방지부재를 설치하도록 구성된 것을 특징으로 하는 매엽식 열처리장치.
  6. 제5항에 있어서, 상기 가스침입 방지부재가 상기 주연부에 따라 형성된 소정 길이의 원통상부재인 것을 특징으로 하는 매엽식 열처리장치.
  7. 제5항에 있어서, 상기 가스침입 방지부재가 상기 단열부재의 외측에 동심으로 배치되는 양자의 사이에 근소한 간극이 형성되어 있는 것을 특징으로 하는 매엽식 열처리장치.
  8. 재치대에 재치한 피처리체에 대해 열처리를 실시하는 매엽식 열처리장치에 있어서, 상기 재치대에 피처리체의 이면의 주연부와 직접 접촉하여 상기 피처리체의 이면을 상기 재치대의 상면에 대해 근소한 간극만큼 이간시키기 위한 지지凸부를 설치하도록 구성된 것을 특징으로 하는 매엽식 열처리장치.
  9. 제8항에 있어서, 상기 지지凸부가 상기 재치대의 주연부의 주방향에 따라 복수 배치되어 있는 것을 특징으로 하는 매엽식 열처리장치.
  10. 처리용기내에 설치한 재치대에 재치한 피처리체를 그 아래쪽의 가열램프에 의해 간접 가열하여 열처리를 행하는 매엽식 열처리장치에 있어서, 상기 재치대의 측부와 상기 처리용기의 측벽 또는 이 측벽과 열적으로 같은 레벨로 되는 부재와의 간격을 상기 재치대의 조립오차에 기인하여 발생하는 열적 영향을 억제할 수 있는 거리 이상으로 설정하고록 구성된 것을 특징으로 하는 매엽식 열처리장치.
  11. 제10항에 있어서, 상기 열적 영향을 억제할 수 있는 거리가 상기 조립오차의 10배 이상인 것을 특징으로 하는 매엽식 열처리장치.
  12. 제10항에 있어서, 상기 측벽과 열적으로 같은 레벨로 되는 부재가 상기 재치대의 외주에 설치한 보호링인 것을 특징으로 하는 매엽식 열처리장치.
KR1019960032129A 1995-08-04 1996-08-01 매엽식열처리장치 KR100403078B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP21966995A JP3430277B2 (ja) 1995-08-04 1995-08-04 枚葉式の熱処理装置
JP95-219669 1995-08-04
JP95219669 1995-08-04

Publications (2)

Publication Number Publication Date
KR970013106A true KR970013106A (ko) 1997-03-29
KR100403078B1 KR100403078B1 (ko) 2004-03-26

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US (1) US5938850A (ko)
JP (1) JP3430277B2 (ko)
KR (1) KR100403078B1 (ko)
TW (1) TW306030B (ko)

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