US5871811A
(en)
*
|
1986-12-19 |
1999-02-16 |
Applied Materials, Inc. |
Method for protecting against deposition on a selected region of a substrate
|
US5821175A
(en)
*
|
1988-07-08 |
1998-10-13 |
Cauldron Limited Partnership |
Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
|
US5843233A
(en)
*
|
1990-07-16 |
1998-12-01 |
Novellus Systems, Inc. |
Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
|
US5620525A
(en)
*
|
1990-07-16 |
1997-04-15 |
Novellus Systems, Inc. |
Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
|
US5578532A
(en)
*
|
1990-07-16 |
1996-11-26 |
Novellus Systems, Inc. |
Wafer surface protection in a gas deposition process
|
US5133284A
(en)
*
|
1990-07-16 |
1992-07-28 |
National Semiconductor Corp. |
Gas-based backside protection during substrate processing
|
US5855687A
(en)
*
|
1990-12-05 |
1999-01-05 |
Applied Materials, Inc. |
Substrate support shield in wafer processing reactors
|
US5304248A
(en)
*
|
1990-12-05 |
1994-04-19 |
Applied Materials, Inc. |
Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
|
US5698070A
(en)
*
|
1991-12-13 |
1997-12-16 |
Tokyo Electron Limited |
Method of etching film formed on semiconductor wafer
|
JPH05251408A
(ja)
*
|
1992-03-06 |
1993-09-28 |
Ebara Corp |
半導体ウェーハのエッチング装置
|
US5425842A
(en)
*
|
1992-06-09 |
1995-06-20 |
U.S. Philips Corporation |
Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the reactor chamber
|
JPH06244269A
(ja)
*
|
1992-09-07 |
1994-09-02 |
Mitsubishi Electric Corp |
半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
|
US5589224A
(en)
*
|
1992-09-30 |
1996-12-31 |
Applied Materials, Inc. |
Apparatus for full wafer deposition
|
JP3566740B2
(ja)
*
|
1992-09-30 |
2004-09-15 |
アプライド マテリアルズ インコーポレイテッド |
全ウエハデポジション用装置
|
US5803977A
(en)
*
|
1992-09-30 |
1998-09-08 |
Applied Materials, Inc. |
Apparatus for full wafer deposition
|
US5343012A
(en)
*
|
1992-10-06 |
1994-08-30 |
Hardy Walter N |
Differentially pumped temperature controller for low pressure thin film fabrication process
|
JP3333605B2
(ja)
*
|
1992-11-12 |
2002-10-15 |
アプライド マテリアルズ インコーポレイテッド |
低熱膨張クランプ機構
|
KR960006958B1
(ko)
*
|
1993-02-06 |
1996-05-25 |
현대전자산업주식회사 |
이시알 장비
|
KR960006956B1
(ko)
*
|
1993-02-06 |
1996-05-25 |
현대전자산업주식회사 |
이시알(ecr) 장비
|
DE4305750C2
(de)
*
|
1993-02-25 |
2002-03-21 |
Unaxis Deutschland Holding |
Vorrichtung zum Halten von flachen, kreisscheibenförmigen Substraten in der Vakuumkammer einer Beschichtungs- oder Ätzanlage
|
US5695568A
(en)
*
|
1993-04-05 |
1997-12-09 |
Applied Materials, Inc. |
Chemical vapor deposition chamber
|
JP3190165B2
(ja)
*
|
1993-04-13 |
2001-07-23 |
東京エレクトロン株式会社 |
縦型熱処理装置及び熱処理方法
|
JP2934565B2
(ja)
*
|
1993-05-21 |
1999-08-16 |
三菱電機株式会社 |
半導体製造装置及び半導体製造方法
|
JPH07153706A
(ja)
*
|
1993-05-27 |
1995-06-16 |
Applied Materials Inc |
サセプタ装置
|
JPH0799162A
(ja)
*
|
1993-06-21 |
1995-04-11 |
Hitachi Ltd |
Cvdリアクタ装置
|
US5534110A
(en)
*
|
1993-07-30 |
1996-07-09 |
Lam Research Corporation |
Shadow clamp
|
US5565382A
(en)
*
|
1993-10-12 |
1996-10-15 |
Applied Materials, Inc. |
Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas
|
US5885469B1
(en)
*
|
1996-11-05 |
2000-08-08 |
Applied Materials Inc |
Topographical structure of an electrostatic chuck and method of fabricating same
|
US5822171A
(en)
|
1994-02-22 |
1998-10-13 |
Applied Materials, Inc. |
Electrostatic chuck with improved erosion resistance
|
EP0668607A1
(de)
*
|
1994-02-22 |
1995-08-23 |
Applied Materials, Inc. |
Erosionsbeständiger elektrostatischer Substratbehälter
|
DE19502777A1
(de)
*
|
1994-02-22 |
1995-08-24 |
Siemens Ag |
Verfahren zur plasmaunterstützten Rückseitenätzung einer Halbleiterscheibe bei belackungsfreier Scheibenvorderseite
|
JP4108119B2
(ja)
*
|
1994-02-23 |
2008-06-25 |
アプライド マテリアルズ, インコーポレイテッド |
改良型化学気相堆積チャンバ
|
US5556476A
(en)
*
|
1994-02-23 |
1996-09-17 |
Applied Materials, Inc. |
Controlling edge deposition on semiconductor substrates
|
US5888304A
(en)
*
|
1996-04-02 |
1999-03-30 |
Applied Materials, Inc. |
Heater with shadow ring and purge above wafer surface
|
US5766365A
(en)
*
|
1994-02-23 |
1998-06-16 |
Applied Materials, Inc. |
Removable ring for controlling edge deposition in substrate processing apparatus
|
US6033480A
(en)
*
|
1994-02-23 |
2000-03-07 |
Applied Materials, Inc. |
Wafer edge deposition elimination
|
US5680013A
(en)
*
|
1994-03-15 |
1997-10-21 |
Applied Materials, Inc. |
Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
|
US5476548A
(en)
*
|
1994-06-20 |
1995-12-19 |
Applied Materials, Inc. |
Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
|
US5738751A
(en)
*
|
1994-09-01 |
1998-04-14 |
Applied Materials, Inc. |
Substrate support having improved heat transfer
|
US5529626A
(en)
*
|
1994-10-24 |
1996-06-25 |
Nec Electronics, Inc. |
Spincup with a wafer backside deposition reduction apparatus
|
US6365495B2
(en)
|
1994-11-14 |
2002-04-02 |
Applied Materials, Inc. |
Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
|
US5558717A
(en)
*
|
1994-11-30 |
1996-09-24 |
Applied Materials |
CVD Processing chamber
|
JP2773674B2
(ja)
*
|
1995-03-31 |
1998-07-09 |
日本電気株式会社 |
半導体装置の製造装置及び半導体装置の製造方法
|
WO1997003456A1
(de)
*
|
1995-07-12 |
1997-01-30 |
Sez Semiconductor-Equipment Zubehör Für Die Halbleiterfertigung Gesellschaft Mbh |
Träger für scheibenförmige gegenstände, insbesondere siliziumscheiben
|
US5938943A
(en)
*
|
1995-07-28 |
1999-08-17 |
Applied Materials, Inc. |
Near Substrate reactant Homogenization apparatus
|
WO1997009737A1
(en)
*
|
1995-09-01 |
1997-03-13 |
Advanced Semiconductor Materials America, Inc. |
Wafer support system
|
US6113702A
(en)
|
1995-09-01 |
2000-09-05 |
Asm America, Inc. |
Wafer support system
|
US5881208A
(en)
*
|
1995-12-20 |
1999-03-09 |
Sematech, Inc. |
Heater and temperature sensor array for rapid thermal processing thermal core
|
US5838529A
(en)
*
|
1995-12-22 |
1998-11-17 |
Lam Research Corporation |
Low voltage electrostatic clamp for substrates such as dielectric substrates
|
US5805408A
(en)
*
|
1995-12-22 |
1998-09-08 |
Lam Research Corporation |
Electrostatic clamp with lip seal for clamping substrates
|
US5589003A
(en)
*
|
1996-02-09 |
1996-12-31 |
Applied Materials, Inc. |
Shielded substrate support for processing chamber
|
US5844205A
(en)
*
|
1996-04-19 |
1998-12-01 |
Applied Komatsu Technology, Inc. |
Heated substrate support structure
|
US5863340A
(en)
*
|
1996-05-08 |
1999-01-26 |
Flanigan; Allen |
Deposition ring anti-rotation apparatus
|
US5948704A
(en)
*
|
1996-06-05 |
1999-09-07 |
Lam Research Corporation |
High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
|
US5820723A
(en)
*
|
1996-06-05 |
1998-10-13 |
Lam Research Corporation |
Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
|
US5993916A
(en)
*
|
1996-07-12 |
1999-11-30 |
Applied Materials, Inc. |
Method for substrate processing with improved throughput and yield
|
US5846332A
(en)
*
|
1996-07-12 |
1998-12-08 |
Applied Materials, Inc. |
Thermally floating pedestal collar in a chemical vapor deposition chamber
|
US5884412A
(en)
*
|
1996-07-24 |
1999-03-23 |
Applied Materials, Inc. |
Method and apparatus for purging the back side of a substrate during chemical vapor processing
|
US5960555A
(en)
*
|
1996-07-24 |
1999-10-05 |
Applied Materials, Inc. |
Method and apparatus for purging the back side of a substrate during chemical vapor processing
|
US6098304A
(en)
*
|
1996-07-26 |
2000-08-08 |
Advanced Micro Devices, Inc. |
Apparatus for reducing delamination within a polycide structure
|
US5653808A
(en)
*
|
1996-08-07 |
1997-08-05 |
Macleish; Joseph H. |
Gas injection system for CVD reactors
|
US6033478A
(en)
*
|
1996-11-05 |
2000-03-07 |
Applied Materials, Inc. |
Wafer support with improved temperature control
|
TW358964B
(en)
|
1996-11-21 |
1999-05-21 |
Applied Materials Inc |
Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
|
US5886864A
(en)
*
|
1996-12-02 |
1999-03-23 |
Applied Materials, Inc. |
Substrate support member for uniform heating of a substrate
|
US5748435A
(en)
*
|
1996-12-30 |
1998-05-05 |
Applied Materials, Inc. |
Apparatus for controlling backside gas pressure beneath a semiconductor wafer
|
US6035101A
(en)
*
|
1997-02-12 |
2000-03-07 |
Applied Materials, Inc. |
High temperature multi-layered alloy heater assembly and related methods
|
US5789028A
(en)
*
|
1997-03-04 |
1998-08-04 |
Lsi Logic Corporation |
Method for eliminating peeling at end of semiconductor substrate in metal organic chemical vapor deposition of titanium nitride
|
US6214122B1
(en)
|
1997-03-17 |
2001-04-10 |
Motorola, Inc. |
Rapid thermal processing susceptor
|
US6122562A
(en)
*
|
1997-05-05 |
2000-09-19 |
Applied Materials, Inc. |
Method and apparatus for selectively marking a semiconductor wafer
|
US6280790B1
(en)
*
|
1997-06-30 |
2001-08-28 |
Applied Materials, Inc. |
Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system
|
US5985033A
(en)
|
1997-07-11 |
1999-11-16 |
Applied Materials, Inc. |
Apparatus and method for delivering a gas
|
US6042700A
(en)
*
|
1997-09-15 |
2000-03-28 |
Applied Materials, Inc. |
Adjustment of deposition uniformity in an inductively coupled plasma source
|
US6023038A
(en)
*
|
1997-09-16 |
2000-02-08 |
Applied Materials, Inc. |
Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
|
US6161500A
(en)
*
|
1997-09-30 |
2000-12-19 |
Tokyo Electron Limited |
Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
|
US6365013B1
(en)
*
|
1997-11-03 |
2002-04-02 |
Siemens Aktiengesellschaft |
Coating method and device
|
US6084215A
(en)
*
|
1997-11-05 |
2000-07-04 |
Tokyo Electron Limited |
Semiconductor wafer holder with spring-mounted temperature measurement apparatus disposed therein
|
US6210483B1
(en)
|
1997-12-02 |
2001-04-03 |
Applied Materials, Inc. |
Anti-notch thinning heater
|
US6168697B1
(en)
*
|
1998-03-10 |
2001-01-02 |
Trusi Technologies Llc |
Holders suitable to hold articles during processing and article processing methods
|
US6095582A
(en)
*
|
1998-03-11 |
2000-08-01 |
Trusi Technologies, Llc |
Article holders and holding methods
|
US6179924B1
(en)
|
1998-04-28 |
2001-01-30 |
Applied Materials, Inc. |
Heater for use in substrate processing apparatus to deposit tungsten
|
US6335293B1
(en)
|
1998-07-13 |
2002-01-01 |
Mattson Technology, Inc. |
Systems and methods for two-sided etch of a semiconductor substrate
|
US6096135A
(en)
|
1998-07-21 |
2000-08-01 |
Applied Materials, Inc. |
Method and apparatus for reducing contamination of a substrate in a substrate processing system
|
US6572814B2
(en)
|
1998-09-08 |
2003-06-03 |
Applied Materials Inc. |
Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas
|
US6639783B1
(en)
|
1998-09-08 |
2003-10-28 |
Applied Materials, Inc. |
Multi-layer ceramic electrostatic chuck with integrated channel
|
US6143082A
(en)
*
|
1998-10-08 |
2000-11-07 |
Novellus Systems, Inc. |
Isolation of incompatible processes in a multi-station processing chamber
|
DE19901291C2
(de)
*
|
1999-01-15 |
2002-04-18 |
Sez Semiconduct Equip Zubehoer |
Vorrichtung zur Ätzbehandlung eines scheibenförmigen Gegenstandes
|
US6159299A
(en)
*
|
1999-02-09 |
2000-12-12 |
Applied Materials, Inc. |
Wafer pedestal with a purge ring
|
SG87084A1
(en)
*
|
1999-02-09 |
2002-03-19 |
Applied Materials Inc |
Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature
|
US6464795B1
(en)
|
1999-05-21 |
2002-10-15 |
Applied Materials, Inc. |
Substrate support member for a processing chamber
|
US6273958B2
(en)
|
1999-06-09 |
2001-08-14 |
Applied Materials, Inc. |
Substrate support for plasma processing
|
US6803546B1
(en)
*
|
1999-07-08 |
2004-10-12 |
Applied Materials, Inc. |
Thermally processing a substrate
|
US6436303B1
(en)
|
1999-07-21 |
2002-08-20 |
Applied Materials, Inc. |
Film removal employing a remote plasma source
|
US6176931B1
(en)
|
1999-10-29 |
2001-01-23 |
International Business Machines Corporation |
Wafer clamp ring for use in an ionized physical vapor deposition apparatus
|
US6377437B1
(en)
|
1999-12-22 |
2002-04-23 |
Lam Research Corporation |
High temperature electrostatic chuck
|
US6223447B1
(en)
|
2000-02-15 |
2001-05-01 |
Applied Materials, Inc. |
Fastening device for a purge ring
|
US6478924B1
(en)
|
2000-03-07 |
2002-11-12 |
Applied Materials, Inc. |
Plasma chamber support having dual electrodes
|
JP4422295B2
(ja)
|
2000-05-17 |
2010-02-24 |
キヤノンアネルバ株式会社 |
Cvd装置
|
US6521292B1
(en)
|
2000-08-04 |
2003-02-18 |
Applied Materials, Inc. |
Substrate support including purge ring having inner edge aligned to wafer edge
|
US6583428B1
(en)
|
2000-09-26 |
2003-06-24 |
Axcelis Technologies, Inc. |
Apparatus for the backside gas cooling of a wafer in a batch ion implantation system
|
US6580082B1
(en)
*
|
2000-09-26 |
2003-06-17 |
Axcelis Technologies, Inc. |
System and method for delivering cooling gas from atmospheric pressure to a high vacuum through a rotating seal in a batch ion implanter
|
US6475336B1
(en)
|
2000-10-06 |
2002-11-05 |
Lam Research Corporation |
Electrostatically clamped edge ring for plasma processing
|
US6413321B1
(en)
*
|
2000-12-07 |
2002-07-02 |
Applied Materials, Inc. |
Method and apparatus for reducing particle contamination on wafer backside during CVD process
|
US7270724B2
(en)
|
2000-12-13 |
2007-09-18 |
Uvtech Systems, Inc. |
Scanning plasma reactor
|
US6773683B2
(en)
*
|
2001-01-08 |
2004-08-10 |
Uvtech Systems, Inc. |
Photocatalytic reactor system for treating flue effluents
|
TWI272689B
(en)
*
|
2001-02-16 |
2007-02-01 |
Tokyo Electron Ltd |
Method and apparatus for transferring heat from a substrate to a chuck
|
US6709721B2
(en)
|
2001-03-28 |
2004-03-23 |
Applied Materials Inc. |
Purge heater design and process development for the improvement of low k film properties
|
US6669783B2
(en)
|
2001-06-28 |
2003-12-30 |
Lam Research Corporation |
High temperature electrostatic chuck
|
US7282183B2
(en)
*
|
2001-12-24 |
2007-10-16 |
Agilent Technologies, Inc. |
Atmospheric control in reaction chambers
|
US20030168174A1
(en)
|
2002-03-08 |
2003-09-11 |
Foree Michael Todd |
Gas cushion susceptor system
|
US6682603B2
(en)
*
|
2002-05-07 |
2004-01-27 |
Applied Materials Inc. |
Substrate support with extended radio frequency electrode upper surface
|
US8033245B2
(en)
*
|
2004-02-12 |
2011-10-11 |
Applied Materials, Inc. |
Substrate support bushing
|
US20050230350A1
(en)
|
2004-02-26 |
2005-10-20 |
Applied Materials, Inc. |
In-situ dry clean chamber for front end of line fabrication
|
US7780793B2
(en)
*
|
2004-02-26 |
2010-08-24 |
Applied Materials, Inc. |
Passivation layer formation by plasma clean process to reduce native oxide growth
|
EP1738251A2
(de)
*
|
2004-04-16 |
2007-01-03 |
Cascade Basic Research Corp. |
Modellierung von verhältnissen in einer umgebung mit vernetzter verbindung
|
US7445015B2
(en)
*
|
2004-09-30 |
2008-11-04 |
Lam Research Corporation |
Cluster tool process chamber having integrated high pressure and vacuum chambers
|
US20060130971A1
(en)
*
|
2004-12-21 |
2006-06-22 |
Applied Materials, Inc. |
Apparatus for generating plasma by RF power
|
US7429718B2
(en)
*
|
2005-08-02 |
2008-09-30 |
Applied Materials, Inc. |
Heating and cooling of substrate support
|
CN100362620C
(zh)
*
|
2005-08-11 |
2008-01-16 |
中微半导体设备(上海)有限公司 |
半导体工艺件装卸装置及其装载和卸载方法
|
KR100898793B1
(ko)
*
|
2005-12-29 |
2009-05-20 |
엘지디스플레이 주식회사 |
액정표시소자용 기판 합착 장치
|
US8789493B2
(en)
*
|
2006-02-13 |
2014-07-29 |
Lam Research Corporation |
Sealed elastomer bonded Si electrodes and the like for reduced particle contamination in dielectric etch
|
DE102006018514A1
(de)
|
2006-04-21 |
2007-10-25 |
Aixtron Ag |
Vorrichtung und Verfahren zur Steuerung der Oberflächentemperatur eines Substrates in einer Prozesskammer
|
US9147588B2
(en)
*
|
2007-03-09 |
2015-09-29 |
Tel Nexx, Inc. |
Substrate processing pallet with cooling
|
US8092606B2
(en)
*
|
2007-12-18 |
2012-01-10 |
Asm Genitech Korea Ltd. |
Deposition apparatus
|
JP4450106B1
(ja)
*
|
2008-03-11 |
2010-04-14 |
東京エレクトロン株式会社 |
載置台構造及び処理装置
|
US8608146B2
(en)
|
2009-12-18 |
2013-12-17 |
Lam Research Ag |
Reinforced pin for being used in a pin chuck, and a pin chuck using such reinforced pin
|
US8613288B2
(en)
|
2009-12-18 |
2013-12-24 |
Lam Research Ag |
High temperature chuck and method of using same
|
US9324576B2
(en)
|
2010-05-27 |
2016-04-26 |
Applied Materials, Inc. |
Selective etch for silicon films
|
US10283321B2
(en)
|
2011-01-18 |
2019-05-07 |
Applied Materials, Inc. |
Semiconductor processing system and methods using capacitively coupled plasma
|
US8771539B2
(en)
|
2011-02-22 |
2014-07-08 |
Applied Materials, Inc. |
Remotely-excited fluorine and water vapor etch
|
US9064815B2
(en)
|
2011-03-14 |
2015-06-23 |
Applied Materials, Inc. |
Methods for etch of metal and metal-oxide films
|
US8999856B2
(en)
|
2011-03-14 |
2015-04-07 |
Applied Materials, Inc. |
Methods for etch of sin films
|
CN102789960A
(zh)
*
|
2011-05-16 |
2012-11-21 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
用于等离子体设备腔室的等离子清洗方法
|
US8771536B2
(en)
|
2011-08-01 |
2014-07-08 |
Applied Materials, Inc. |
Dry-etch for silicon-and-carbon-containing films
|
US8679982B2
(en)
|
2011-08-26 |
2014-03-25 |
Applied Materials, Inc. |
Selective suppression of dry-etch rate of materials containing both silicon and oxygen
|
US8679983B2
(en)
|
2011-09-01 |
2014-03-25 |
Applied Materials, Inc. |
Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
|
US8927390B2
(en)
|
2011-09-26 |
2015-01-06 |
Applied Materials, Inc. |
Intrench profile
|
US8808563B2
(en)
|
2011-10-07 |
2014-08-19 |
Applied Materials, Inc. |
Selective etch of silicon by way of metastable hydrogen termination
|
US9859142B2
(en)
|
2011-10-20 |
2018-01-02 |
Lam Research Corporation |
Edge seal for lower electrode assembly
|
US9869392B2
(en)
*
|
2011-10-20 |
2018-01-16 |
Lam Research Corporation |
Edge seal for lower electrode assembly
|
WO2013070436A1
(en)
|
2011-11-08 |
2013-05-16 |
Applied Materials, Inc. |
Methods of reducing substrate dislocation during gapfill processing
|
EP2794953A1
(de)
*
|
2011-12-21 |
2014-10-29 |
Applied Materials, Inc. |
System und verfahren zur substratverarbeitung
|
US9558985B2
(en)
*
|
2012-03-28 |
2017-01-31 |
Acm Research (Shanghai) Inc. |
Vacuum chuck
|
US9267739B2
(en)
|
2012-07-18 |
2016-02-23 |
Applied Materials, Inc. |
Pedestal with multi-zone temperature control and multiple purge capabilities
|
US9373517B2
(en)
|
2012-08-02 |
2016-06-21 |
Applied Materials, Inc. |
Semiconductor processing with DC assisted RF power for improved control
|
US9034770B2
(en)
|
2012-09-17 |
2015-05-19 |
Applied Materials, Inc. |
Differential silicon oxide etch
|
US9023734B2
(en)
|
2012-09-18 |
2015-05-05 |
Applied Materials, Inc. |
Radical-component oxide etch
|
US9390937B2
(en)
|
2012-09-20 |
2016-07-12 |
Applied Materials, Inc. |
Silicon-carbon-nitride selective etch
|
US9132436B2
(en)
|
2012-09-21 |
2015-09-15 |
Applied Materials, Inc. |
Chemical control features in wafer process equipment
|
US8765574B2
(en)
|
2012-11-09 |
2014-07-01 |
Applied Materials, Inc. |
Dry etch process
|
US8969212B2
(en)
|
2012-11-20 |
2015-03-03 |
Applied Materials, Inc. |
Dry-etch selectivity
|
US9064816B2
(en)
|
2012-11-30 |
2015-06-23 |
Applied Materials, Inc. |
Dry-etch for selective oxidation removal
|
US8980763B2
(en)
|
2012-11-30 |
2015-03-17 |
Applied Materials, Inc. |
Dry-etch for selective tungsten removal
|
US9111877B2
(en)
|
2012-12-18 |
2015-08-18 |
Applied Materials, Inc. |
Non-local plasma oxide etch
|
US8921234B2
(en)
|
2012-12-21 |
2014-12-30 |
Applied Materials, Inc. |
Selective titanium nitride etching
|
US10256079B2
(en)
|
2013-02-08 |
2019-04-09 |
Applied Materials, Inc. |
Semiconductor processing systems having multiple plasma configurations
|
US9362130B2
(en)
|
2013-03-01 |
2016-06-07 |
Applied Materials, Inc. |
Enhanced etching processes using remote plasma sources
|
US9040422B2
(en)
|
2013-03-05 |
2015-05-26 |
Applied Materials, Inc. |
Selective titanium nitride removal
|
US8801952B1
(en)
|
2013-03-07 |
2014-08-12 |
Applied Materials, Inc. |
Conformal oxide dry etch
|
US10170282B2
(en)
|
2013-03-08 |
2019-01-01 |
Applied Materials, Inc. |
Insulated semiconductor faceplate designs
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
US8895449B1
(en)
|
2013-05-16 |
2014-11-25 |
Applied Materials, Inc. |
Delicate dry clean
|
US9114438B2
(en)
|
2013-05-21 |
2015-08-25 |
Applied Materials, Inc. |
Copper residue chamber clean
|
US9493879B2
(en)
|
2013-07-12 |
2016-11-15 |
Applied Materials, Inc. |
Selective sputtering for pattern transfer
|
US9773648B2
(en)
|
2013-08-30 |
2017-09-26 |
Applied Materials, Inc. |
Dual discharge modes operation for remote plasma
|
US8956980B1
(en)
|
2013-09-16 |
2015-02-17 |
Applied Materials, Inc. |
Selective etch of silicon nitride
|
US8951429B1
(en)
|
2013-10-29 |
2015-02-10 |
Applied Materials, Inc. |
Tungsten oxide processing
|
US9236265B2
(en)
|
2013-11-04 |
2016-01-12 |
Applied Materials, Inc. |
Silicon germanium processing
|
US9576809B2
(en)
|
2013-11-04 |
2017-02-21 |
Applied Materials, Inc. |
Etch suppression with germanium
|
US9520303B2
(en)
|
2013-11-12 |
2016-12-13 |
Applied Materials, Inc. |
Aluminum selective etch
|
US9245762B2
(en)
|
2013-12-02 |
2016-01-26 |
Applied Materials, Inc. |
Procedure for etch rate consistency
|
US9117855B2
(en)
|
2013-12-04 |
2015-08-25 |
Applied Materials, Inc. |
Polarity control for remote plasma
|
US9287095B2
(en)
|
2013-12-17 |
2016-03-15 |
Applied Materials, Inc. |
Semiconductor system assemblies and methods of operation
|
US9263278B2
(en)
|
2013-12-17 |
2016-02-16 |
Applied Materials, Inc. |
Dopant etch selectivity control
|
US9190293B2
(en)
|
2013-12-18 |
2015-11-17 |
Applied Materials, Inc. |
Even tungsten etch for high aspect ratio trenches
|
US10090211B2
(en)
|
2013-12-26 |
2018-10-02 |
Lam Research Corporation |
Edge seal for lower electrode assembly
|
US9287134B2
(en)
|
2014-01-17 |
2016-03-15 |
Applied Materials, Inc. |
Titanium oxide etch
|
US9293568B2
(en)
|
2014-01-27 |
2016-03-22 |
Applied Materials, Inc. |
Method of fin patterning
|
US9396989B2
(en)
|
2014-01-27 |
2016-07-19 |
Applied Materials, Inc. |
Air gaps between copper lines
|
US9385028B2
(en)
|
2014-02-03 |
2016-07-05 |
Applied Materials, Inc. |
Air gap process
|
US9499898B2
(en)
|
2014-03-03 |
2016-11-22 |
Applied Materials, Inc. |
Layered thin film heater and method of fabrication
|
US9299575B2
(en)
|
2014-03-17 |
2016-03-29 |
Applied Materials, Inc. |
Gas-phase tungsten etch
|
US9299538B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9299537B2
(en)
|
2014-03-20 |
2016-03-29 |
Applied Materials, Inc. |
Radial waveguide systems and methods for post-match control of microwaves
|
US9136273B1
(en)
|
2014-03-21 |
2015-09-15 |
Applied Materials, Inc. |
Flash gate air gap
|
US9903020B2
(en)
|
2014-03-31 |
2018-02-27 |
Applied Materials, Inc. |
Generation of compact alumina passivation layers on aluminum plasma equipment components
|
US9269590B2
(en)
|
2014-04-07 |
2016-02-23 |
Applied Materials, Inc. |
Spacer formation
|
US9309598B2
(en)
|
2014-05-28 |
2016-04-12 |
Applied Materials, Inc. |
Oxide and metal removal
|
US9847289B2
(en)
|
2014-05-30 |
2017-12-19 |
Applied Materials, Inc. |
Protective via cap for improved interconnect performance
|
US9378969B2
(en)
|
2014-06-19 |
2016-06-28 |
Applied Materials, Inc. |
Low temperature gas-phase carbon removal
|
US9406523B2
(en)
|
2014-06-19 |
2016-08-02 |
Applied Materials, Inc. |
Highly selective doped oxide removal method
|
US9425058B2
(en)
|
2014-07-24 |
2016-08-23 |
Applied Materials, Inc. |
Simplified litho-etch-litho-etch process
|
US9159606B1
(en)
|
2014-07-31 |
2015-10-13 |
Applied Materials, Inc. |
Metal air gap
|
US9378978B2
(en)
|
2014-07-31 |
2016-06-28 |
Applied Materials, Inc. |
Integrated oxide recess and floating gate fin trimming
|
US9496167B2
(en)
|
2014-07-31 |
2016-11-15 |
Applied Materials, Inc. |
Integrated bit-line airgap formation and gate stack post clean
|
US9165786B1
(en)
|
2014-08-05 |
2015-10-20 |
Applied Materials, Inc. |
Integrated oxide and nitride recess for better channel contact in 3D architectures
|
US9659753B2
(en)
|
2014-08-07 |
2017-05-23 |
Applied Materials, Inc. |
Grooved insulator to reduce leakage current
|
US9553102B2
(en)
|
2014-08-19 |
2017-01-24 |
Applied Materials, Inc. |
Tungsten separation
|
US9355856B2
(en)
|
2014-09-12 |
2016-05-31 |
Applied Materials, Inc. |
V trench dry etch
|
US9460915B2
(en)
|
2014-09-12 |
2016-10-04 |
Lam Research Corporation |
Systems and methods for reducing backside deposition and mitigating thickness changes at substrate edges
|
US9368364B2
(en)
|
2014-09-24 |
2016-06-14 |
Applied Materials, Inc. |
Silicon etch process with tunable selectivity to SiO2 and other materials
|
US9355862B2
(en)
|
2014-09-24 |
2016-05-31 |
Applied Materials, Inc. |
Fluorine-based hardmask removal
|
US9613822B2
(en)
|
2014-09-25 |
2017-04-04 |
Applied Materials, Inc. |
Oxide etch selectivity enhancement
|
US9355922B2
(en)
|
2014-10-14 |
2016-05-31 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning in plasma processing equipment
|
US9966240B2
(en)
|
2014-10-14 |
2018-05-08 |
Applied Materials, Inc. |
Systems and methods for internal surface conditioning assessment in plasma processing equipment
|
US11637002B2
(en)
|
2014-11-26 |
2023-04-25 |
Applied Materials, Inc. |
Methods and systems to enhance process uniformity
|
US9299583B1
(en)
|
2014-12-05 |
2016-03-29 |
Applied Materials, Inc. |
Aluminum oxide selective etch
|
US10573496B2
(en)
|
2014-12-09 |
2020-02-25 |
Applied Materials, Inc. |
Direct outlet toroidal plasma source
|
US10224210B2
(en)
|
2014-12-09 |
2019-03-05 |
Applied Materials, Inc. |
Plasma processing system with direct outlet toroidal plasma source
|
US9502258B2
(en)
|
2014-12-23 |
2016-11-22 |
Applied Materials, Inc. |
Anisotropic gap etch
|
US9343272B1
(en)
|
2015-01-08 |
2016-05-17 |
Applied Materials, Inc. |
Self-aligned process
|
US11257693B2
(en)
|
2015-01-09 |
2022-02-22 |
Applied Materials, Inc. |
Methods and systems to improve pedestal temperature control
|
US9373522B1
(en)
|
2015-01-22 |
2016-06-21 |
Applied Mateials, Inc. |
Titanium nitride removal
|
US9449846B2
(en)
|
2015-01-28 |
2016-09-20 |
Applied Materials, Inc. |
Vertical gate separation
|
US9728437B2
(en)
|
2015-02-03 |
2017-08-08 |
Applied Materials, Inc. |
High temperature chuck for plasma processing systems
|
US20160225652A1
(en)
|
2015-02-03 |
2016-08-04 |
Applied Materials, Inc. |
Low temperature chuck for plasma processing systems
|
US9881805B2
(en)
|
2015-03-02 |
2018-01-30 |
Applied Materials, Inc. |
Silicon selective removal
|
US9691645B2
(en)
|
2015-08-06 |
2017-06-27 |
Applied Materials, Inc. |
Bolted wafer chuck thermal management systems and methods for wafer processing systems
|
US9741593B2
(en)
|
2015-08-06 |
2017-08-22 |
Applied Materials, Inc. |
Thermal management systems and methods for wafer processing systems
|
US9349605B1
(en)
|
2015-08-07 |
2016-05-24 |
Applied Materials, Inc. |
Oxide etch selectivity systems and methods
|
US10504700B2
(en)
|
2015-08-27 |
2019-12-10 |
Applied Materials, Inc. |
Plasma etching systems and methods with secondary plasma injection
|
US10522371B2
(en)
|
2016-05-19 |
2019-12-31 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US10504754B2
(en)
|
2016-05-19 |
2019-12-10 |
Applied Materials, Inc. |
Systems and methods for improved semiconductor etching and component protection
|
US9865484B1
(en)
|
2016-06-29 |
2018-01-09 |
Applied Materials, Inc. |
Selective etch using material modification and RF pulsing
|
US10062575B2
(en)
|
2016-09-09 |
2018-08-28 |
Applied Materials, Inc. |
Poly directional etch by oxidation
|
US10629473B2
(en)
|
2016-09-09 |
2020-04-21 |
Applied Materials, Inc. |
Footing removal for nitride spacer
|
US9721789B1
(en)
|
2016-10-04 |
2017-08-01 |
Applied Materials, Inc. |
Saving ion-damaged spacers
|
US9934942B1
(en)
|
2016-10-04 |
2018-04-03 |
Applied Materials, Inc. |
Chamber with flow-through source
|
US10546729B2
(en)
|
2016-10-04 |
2020-01-28 |
Applied Materials, Inc. |
Dual-channel showerhead with improved profile
|
US10062585B2
(en)
|
2016-10-04 |
2018-08-28 |
Applied Materials, Inc. |
Oxygen compatible plasma source
|
US20180102247A1
(en)
*
|
2016-10-06 |
2018-04-12 |
Asm Ip Holding B.V. |
Substrate processing apparatus and method of manufacturing semiconductor device
|
US10062579B2
(en)
|
2016-10-07 |
2018-08-28 |
Applied Materials, Inc. |
Selective SiN lateral recess
|
US9947549B1
(en)
|
2016-10-10 |
2018-04-17 |
Applied Materials, Inc. |
Cobalt-containing material removal
|
US9768034B1
(en)
|
2016-11-11 |
2017-09-19 |
Applied Materials, Inc. |
Removal methods for high aspect ratio structures
|
US10163696B2
(en)
|
2016-11-11 |
2018-12-25 |
Applied Materials, Inc. |
Selective cobalt removal for bottom up gapfill
|
US10242908B2
(en)
|
2016-11-14 |
2019-03-26 |
Applied Materials, Inc. |
Airgap formation with damage-free copper
|
US10026621B2
(en)
|
2016-11-14 |
2018-07-17 |
Applied Materials, Inc. |
SiN spacer profile patterning
|
US10566206B2
(en)
|
2016-12-27 |
2020-02-18 |
Applied Materials, Inc. |
Systems and methods for anisotropic material breakthrough
|
US10403507B2
(en)
|
2017-02-03 |
2019-09-03 |
Applied Materials, Inc. |
Shaped etch profile with oxidation
|
US10431429B2
(en)
|
2017-02-03 |
2019-10-01 |
Applied Materials, Inc. |
Systems and methods for radial and azimuthal control of plasma uniformity
|
US10043684B1
(en)
|
2017-02-06 |
2018-08-07 |
Applied Materials, Inc. |
Self-limiting atomic thermal etching systems and methods
|
US10319739B2
(en)
|
2017-02-08 |
2019-06-11 |
Applied Materials, Inc. |
Accommodating imperfectly aligned memory holes
|
US10943834B2
(en)
|
2017-03-13 |
2021-03-09 |
Applied Materials, Inc. |
Replacement contact process
|
US10319649B2
(en)
|
2017-04-11 |
2019-06-11 |
Applied Materials, Inc. |
Optical emission spectroscopy (OES) for remote plasma monitoring
|
US11276590B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Multi-zone semiconductor substrate supports
|
US11276559B2
(en)
|
2017-05-17 |
2022-03-15 |
Applied Materials, Inc. |
Semiconductor processing chamber for multiple precursor flow
|
US10497579B2
(en)
|
2017-05-31 |
2019-12-03 |
Applied Materials, Inc. |
Water-free etching methods
|
US10049891B1
(en)
|
2017-05-31 |
2018-08-14 |
Applied Materials, Inc. |
Selective in situ cobalt residue removal
|
US10920320B2
(en)
|
2017-06-16 |
2021-02-16 |
Applied Materials, Inc. |
Plasma health determination in semiconductor substrate processing reactors
|
US10541246B2
(en)
|
2017-06-26 |
2020-01-21 |
Applied Materials, Inc. |
3D flash memory cells which discourage cross-cell electrical tunneling
|
US10727080B2
(en)
|
2017-07-07 |
2020-07-28 |
Applied Materials, Inc. |
Tantalum-containing material removal
|
US10541184B2
(en)
|
2017-07-11 |
2020-01-21 |
Applied Materials, Inc. |
Optical emission spectroscopic techniques for monitoring etching
|
US10354889B2
(en)
|
2017-07-17 |
2019-07-16 |
Applied Materials, Inc. |
Non-halogen etching of silicon-containing materials
|
US10043674B1
(en)
|
2017-08-04 |
2018-08-07 |
Applied Materials, Inc. |
Germanium etching systems and methods
|
US10170336B1
(en)
|
2017-08-04 |
2019-01-01 |
Applied Materials, Inc. |
Methods for anisotropic control of selective silicon removal
|
US10297458B2
(en)
|
2017-08-07 |
2019-05-21 |
Applied Materials, Inc. |
Process window widening using coated parts in plasma etch processes
|
US10283324B1
(en)
|
2017-10-24 |
2019-05-07 |
Applied Materials, Inc. |
Oxygen treatment for nitride etching
|
US10128086B1
(en)
|
2017-10-24 |
2018-11-13 |
Applied Materials, Inc. |
Silicon pretreatment for nitride removal
|
US10256112B1
(en)
|
2017-12-08 |
2019-04-09 |
Applied Materials, Inc. |
Selective tungsten removal
|
US10903054B2
(en)
|
2017-12-19 |
2021-01-26 |
Applied Materials, Inc. |
Multi-zone gas distribution systems and methods
|
US11328909B2
(en)
|
2017-12-22 |
2022-05-10 |
Applied Materials, Inc. |
Chamber conditioning and removal processes
|
US10854426B2
(en)
|
2018-01-08 |
2020-12-01 |
Applied Materials, Inc. |
Metal recess for semiconductor structures
|
US10679870B2
(en)
|
2018-02-15 |
2020-06-09 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus
|
US10964512B2
(en)
|
2018-02-15 |
2021-03-30 |
Applied Materials, Inc. |
Semiconductor processing chamber multistage mixing apparatus and methods
|
TWI766433B
(zh)
|
2018-02-28 |
2022-06-01 |
美商應用材料股份有限公司 |
形成氣隙的系統及方法
|
US10593560B2
(en)
|
2018-03-01 |
2020-03-17 |
Applied Materials, Inc. |
Magnetic induction plasma source for semiconductor processes and equipment
|
US10319600B1
(en)
|
2018-03-12 |
2019-06-11 |
Applied Materials, Inc. |
Thermal silicon etch
|
US10497573B2
(en)
|
2018-03-13 |
2019-12-03 |
Applied Materials, Inc. |
Selective atomic layer etching of semiconductor materials
|
JP7178177B2
(ja)
*
|
2018-03-22 |
2022-11-25 |
東京エレクトロン株式会社 |
基板処理装置
|
US10573527B2
(en)
|
2018-04-06 |
2020-02-25 |
Applied Materials, Inc. |
Gas-phase selective etching systems and methods
|
US10490406B2
(en)
|
2018-04-10 |
2019-11-26 |
Appled Materials, Inc. |
Systems and methods for material breakthrough
|
US10699879B2
(en)
|
2018-04-17 |
2020-06-30 |
Applied Materials, Inc. |
Two piece electrode assembly with gap for plasma control
|
US10886137B2
(en)
|
2018-04-30 |
2021-01-05 |
Applied Materials, Inc. |
Selective nitride removal
|
US10872778B2
(en)
|
2018-07-06 |
2020-12-22 |
Applied Materials, Inc. |
Systems and methods utilizing solid-phase etchants
|
US10755941B2
(en)
|
2018-07-06 |
2020-08-25 |
Applied Materials, Inc. |
Self-limiting selective etching systems and methods
|
US10672642B2
(en)
|
2018-07-24 |
2020-06-02 |
Applied Materials, Inc. |
Systems and methods for pedestal configuration
|
US11049755B2
(en)
|
2018-09-14 |
2021-06-29 |
Applied Materials, Inc. |
Semiconductor substrate supports with embedded RF shield
|
US10892198B2
(en)
|
2018-09-14 |
2021-01-12 |
Applied Materials, Inc. |
Systems and methods for improved performance in semiconductor processing
|
US11062887B2
(en)
|
2018-09-17 |
2021-07-13 |
Applied Materials, Inc. |
High temperature RF heater pedestals
|
US11417534B2
(en)
|
2018-09-21 |
2022-08-16 |
Applied Materials, Inc. |
Selective material removal
|
US11682560B2
(en)
|
2018-10-11 |
2023-06-20 |
Applied Materials, Inc. |
Systems and methods for hafnium-containing film removal
|
US11121002B2
(en)
|
2018-10-24 |
2021-09-14 |
Applied Materials, Inc. |
Systems and methods for etching metals and metal derivatives
|
US11437242B2
(en)
|
2018-11-27 |
2022-09-06 |
Applied Materials, Inc. |
Selective removal of silicon-containing materials
|
US11145532B2
(en)
*
|
2018-12-21 |
2021-10-12 |
Toto Ltd. |
Electrostatic chuck
|
US11721527B2
(en)
|
2019-01-07 |
2023-08-08 |
Applied Materials, Inc. |
Processing chamber mixing systems
|
US10920319B2
(en)
|
2019-01-11 |
2021-02-16 |
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