SG87084A1 - Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature - Google Patents

Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature

Info

Publication number
SG87084A1
SG87084A1 SG200000752A SG200000752A SG87084A1 SG 87084 A1 SG87084 A1 SG 87084A1 SG 200000752 A SG200000752 A SG 200000752A SG 200000752 A SG200000752 A SG 200000752A SG 87084 A1 SG87084 A1 SG 87084A1
Authority
SG
Singapore
Prior art keywords
metallo
performing
method
vapor deposition
chemical vapor
Prior art date
Application number
SG200000752A
Inventor
Wang Shulin
Luo Huan
K Koai Keith
Xi Ming
Chang Mei
C Ellwanger Russell
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US09/248,183 priority Critical patent/US6365495B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG87084A1 publication Critical patent/SG87084A1/en

Links

SG200000752A 1994-11-14 2000-02-09 Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature SG87084A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/248,183 US6365495B2 (en) 1994-11-14 1999-02-09 Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature

Publications (1)

Publication Number Publication Date
SG87084A1 true SG87084A1 (en) 2002-03-19

Family

ID=22938051

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000752A SG87084A1 (en) 1994-11-14 2000-02-09 Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature

Country Status (3)

Country Link
JP (1) JP2000286215A (en)
KR (1) KR100629540B1 (en)
SG (1) SG87084A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008041977A (en) * 2006-08-08 2008-02-21 Nec Electronics Corp Manufacturing method of semiconductor circuit device
WO2008111231A1 (en) 2007-03-15 2008-09-18 Fujitsu Microelectronics Limited Chemical vapor-phase growing apparatus, method of forming film and process for producing semiconductor device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192589A (en) * 1991-09-05 1993-03-09 Micron Technology, Inc. Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
EP0467623B1 (en) * 1990-07-16 1996-03-13 Novellus Systems, Inc. Apparatus for and method of protection during substrate processing
US5516367A (en) * 1993-04-05 1996-05-14 Applied Materials, Inc. Chemical vapor deposition chamber with a purge guide
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5766365A (en) * 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US5851299A (en) * 1990-12-05 1998-12-22 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254499A (en) * 1992-07-14 1993-10-19 Micron Technology, Inc. Method of depositing high density titanium nitride films on semiconductor wafers
US5246881A (en) * 1993-04-14 1993-09-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity
US6156382A (en) * 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
EP0467623B1 (en) * 1990-07-16 1996-03-13 Novellus Systems, Inc. Apparatus for and method of protection during substrate processing
US5851299A (en) * 1990-12-05 1998-12-22 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US5192589A (en) * 1991-09-05 1993-03-09 Micron Technology, Inc. Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5516367A (en) * 1993-04-05 1996-05-14 Applied Materials, Inc. Chemical vapor deposition chamber with a purge guide
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5766365A (en) * 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring

Also Published As

Publication number Publication date
JP2000286215A (en) 2000-10-13
KR20000057985A (en) 2000-09-25
KR100629540B1 (en) 2006-09-27

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