SG87084A1 - Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature - Google Patents

Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature

Info

Publication number
SG87084A1
SG87084A1 SG200000752A SG200000752A SG87084A1 SG 87084 A1 SG87084 A1 SG 87084A1 SG 200000752 A SG200000752 A SG 200000752A SG 200000752 A SG200000752 A SG 200000752A SG 87084 A1 SG87084 A1 SG 87084A1
Authority
SG
Singapore
Prior art keywords
metallo
vapor deposition
chemical vapor
titanium nitride
organic chemical
Prior art date
Application number
SG200000752A
Inventor
Wang Shulin
Luo Huan
K Koai Keith
Xi Ming
Chang Mei
C Ellwanger Russell
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/248,183 external-priority patent/US6365495B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG87084A1 publication Critical patent/SG87084A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
SG200000752A 1999-02-09 2000-02-09 Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature SG87084A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/248,183 US6365495B2 (en) 1994-11-14 1999-02-09 Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature

Publications (1)

Publication Number Publication Date
SG87084A1 true SG87084A1 (en) 2002-03-19

Family

ID=22938051

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000752A SG87084A1 (en) 1999-02-09 2000-02-09 Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature

Country Status (3)

Country Link
JP (1) JP2000286215A (en)
KR (1) KR100629540B1 (en)
SG (1) SG87084A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008041977A (en) * 2006-08-08 2008-02-21 Nec Electronics Corp Manufacturing method of semiconductor circuit device
KR101066897B1 (en) 2007-03-15 2011-09-27 후지쯔 세미컨덕터 가부시키가이샤 Chemical vapor-phase growing apparatus, method of forming film and process for producing semiconductor device
US20160289827A1 (en) * 2015-03-31 2016-10-06 Lam Research Corporation Plasma processing systems and structures having sloped confinement rings
US11328929B2 (en) * 2018-05-01 2022-05-10 Applied Materials, Inc. Methods, apparatuses and systems for substrate processing for lowering contact resistance

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192589A (en) * 1991-09-05 1993-03-09 Micron Technology, Inc. Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
EP0467623B1 (en) * 1990-07-16 1996-03-13 Novellus Systems, Inc. Apparatus for and method of protection during substrate processing
US5516367A (en) * 1993-04-05 1996-05-14 Applied Materials, Inc. Chemical vapor deposition chamber with a purge guide
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5766365A (en) * 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US5851299A (en) * 1990-12-05 1998-12-22 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254499A (en) * 1992-07-14 1993-10-19 Micron Technology, Inc. Method of depositing high density titanium nitride films on semiconductor wafers
US5246881A (en) * 1993-04-14 1993-09-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity
US6156382A (en) * 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
EP0467623B1 (en) * 1990-07-16 1996-03-13 Novellus Systems, Inc. Apparatus for and method of protection during substrate processing
US5851299A (en) * 1990-12-05 1998-12-22 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US5192589A (en) * 1991-09-05 1993-03-09 Micron Technology, Inc. Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity
US5516367A (en) * 1993-04-05 1996-05-14 Applied Materials, Inc. Chemical vapor deposition chamber with a purge guide
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5766365A (en) * 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring

Also Published As

Publication number Publication date
KR20000057985A (en) 2000-09-25
JP2000286215A (en) 2000-10-13
KR100629540B1 (en) 2006-09-27

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