SG87084A1 - Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature - Google Patents
Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperatureInfo
- Publication number
- SG87084A1 SG87084A1 SG200000752A SG200000752A SG87084A1 SG 87084 A1 SG87084 A1 SG 87084A1 SG 200000752 A SG200000752 A SG 200000752A SG 200000752 A SG200000752 A SG 200000752A SG 87084 A1 SG87084 A1 SG 87084A1
- Authority
- SG
- Singapore
- Prior art keywords
- metallo
- vapor deposition
- chemical vapor
- titanium nitride
- organic chemical
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/248,183 US6365495B2 (en) | 1994-11-14 | 1999-02-09 | Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature |
Publications (1)
Publication Number | Publication Date |
---|---|
SG87084A1 true SG87084A1 (en) | 2002-03-19 |
Family
ID=22938051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200000752A SG87084A1 (en) | 1999-02-09 | 2000-02-09 | Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2000286215A (en) |
KR (1) | KR100629540B1 (en) |
SG (1) | SG87084A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008041977A (en) * | 2006-08-08 | 2008-02-21 | Nec Electronics Corp | Manufacturing method of semiconductor circuit device |
KR101066897B1 (en) | 2007-03-15 | 2011-09-27 | 후지쯔 세미컨덕터 가부시키가이샤 | Chemical vapor-phase growing apparatus, method of forming film and process for producing semiconductor device |
US20160289827A1 (en) * | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Plasma processing systems and structures having sloped confinement rings |
US11328929B2 (en) * | 2018-05-01 | 2022-05-10 | Applied Materials, Inc. | Methods, apparatuses and systems for substrate processing for lowering contact resistance |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5192589A (en) * | 1991-09-05 | 1993-03-09 | Micron Technology, Inc. | Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity |
US5447570A (en) * | 1990-04-23 | 1995-09-05 | Genus, Inc. | Purge gas in wafer coating area selection |
EP0467623B1 (en) * | 1990-07-16 | 1996-03-13 | Novellus Systems, Inc. | Apparatus for and method of protection during substrate processing |
US5516367A (en) * | 1993-04-05 | 1996-05-14 | Applied Materials, Inc. | Chemical vapor deposition chamber with a purge guide |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
US5766365A (en) * | 1994-02-23 | 1998-06-16 | Applied Materials, Inc. | Removable ring for controlling edge deposition in substrate processing apparatus |
US5851299A (en) * | 1990-12-05 | 1998-12-22 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5254499A (en) * | 1992-07-14 | 1993-10-19 | Micron Technology, Inc. | Method of depositing high density titanium nitride films on semiconductor wafers |
US5246881A (en) * | 1993-04-14 | 1993-09-21 | Micron Semiconductor, Inc. | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity |
US6156382A (en) * | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Chemical vapor deposition process for depositing tungsten |
-
2000
- 2000-02-09 JP JP2000032135A patent/JP2000286215A/en active Pending
- 2000-02-09 KR KR1020000005999A patent/KR100629540B1/en active IP Right Grant
- 2000-02-09 SG SG200000752A patent/SG87084A1/en unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5447570A (en) * | 1990-04-23 | 1995-09-05 | Genus, Inc. | Purge gas in wafer coating area selection |
EP0467623B1 (en) * | 1990-07-16 | 1996-03-13 | Novellus Systems, Inc. | Apparatus for and method of protection during substrate processing |
US5851299A (en) * | 1990-12-05 | 1998-12-22 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
US5192589A (en) * | 1991-09-05 | 1993-03-09 | Micron Technology, Inc. | Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity |
US5516367A (en) * | 1993-04-05 | 1996-05-14 | Applied Materials, Inc. | Chemical vapor deposition chamber with a purge guide |
US5556476A (en) * | 1994-02-23 | 1996-09-17 | Applied Materials, Inc. | Controlling edge deposition on semiconductor substrates |
US5766365A (en) * | 1994-02-23 | 1998-06-16 | Applied Materials, Inc. | Removable ring for controlling edge deposition in substrate processing apparatus |
US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
Also Published As
Publication number | Publication date |
---|---|
KR20000057985A (en) | 2000-09-25 |
JP2000286215A (en) | 2000-10-13 |
KR100629540B1 (en) | 2006-09-27 |
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