EP1102872A4 - Novel organocuprous precursors for chemical vapor deposition of a copper film - Google Patents
Novel organocuprous precursors for chemical vapor deposition of a copper filmInfo
- Publication number
- EP1102872A4 EP1102872A4 EP99959960A EP99959960A EP1102872A4 EP 1102872 A4 EP1102872 A4 EP 1102872A4 EP 99959960 A EP99959960 A EP 99959960A EP 99959960 A EP99959960 A EP 99959960A EP 1102872 A4 EP1102872 A4 EP 1102872A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- organocuprous
- precursors
- novel
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic System
- C07F1/08—Copper compounds
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990013236A KR100298125B1 (en) | 1999-04-15 | 1999-04-15 | Organocuprous precursors for chemical deposition of copper |
KR9913236 | 1999-04-15 | ||
PCT/KR1999/000743 WO2000063461A1 (en) | 1999-04-15 | 1999-12-07 | Novel organocuprous precursors for chemical vapor deposition of a copper film |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1102872A1 EP1102872A1 (en) | 2001-05-30 |
EP1102872A4 true EP1102872A4 (en) | 2008-04-30 |
Family
ID=19580072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP99959960A Withdrawn EP1102872A4 (en) | 1999-04-15 | 1999-12-07 | Novel organocuprous precursors for chemical vapor deposition of a copper film |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1102872A4 (en) |
JP (1) | JP2002542397A (en) |
KR (1) | KR100298125B1 (en) |
CN (1) | CN1194117C (en) |
RU (1) | RU2181725C2 (en) |
TW (1) | TW524881B (en) |
WO (1) | WO2000063461A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
UA78180C2 (en) * | 1997-10-03 | 2007-03-15 | Меріаль | Porcine circovirus, vaccines and diagnostic reagents |
KR100338112B1 (en) * | 1999-12-22 | 2002-05-24 | 박종섭 | Method of forming a copper wiring in a semiconductor device |
KR100358045B1 (en) * | 1999-12-22 | 2002-10-25 | 주식회사 하이닉스반도체 | Method of forming a copper wiring in a semiconductor device |
KR100347838B1 (en) * | 2000-03-07 | 2002-08-07 | 학교법인 포항공과대학교 | Process for improving the thermal stability of liquid organocuprous precursors |
DE10228050A1 (en) * | 2002-06-24 | 2004-01-15 | Merck Patent Gmbh | Dikupfer (I) oxolate complexes as precursor substances for metallic copper deposition |
DE10319454A1 (en) * | 2003-04-29 | 2004-11-18 | Merck Patent Gmbh | Dikupfer (I) oxalate complexes as a precursor for metallic copper deposition |
EP1811059B1 (en) * | 2004-09-27 | 2012-10-31 | Ulvac, Inc. | Process for formation of copper-containing film |
DE102009023952A1 (en) | 2009-06-04 | 2010-12-09 | DüRR DENTAL AG | Method for determining tooth color of e.g. dental prosthesis, involves providing difference between color values of images and tooth color pattern as measurement for correlating colors of tooth region and tooth color pattern |
JP5779823B2 (en) * | 2010-11-17 | 2015-09-16 | ユーピー ケミカル カンパニー リミテッド | Diazadiene-based metal compound, method for producing the same, and method for forming a thin film using the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1001047A2 (en) * | 1998-11-10 | 2000-05-17 | Sharp Kabushiki Kaisha | Alkene ligand precursor and synthesis method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5144049A (en) * | 1991-02-04 | 1992-09-01 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
US5187300A (en) * | 1991-02-04 | 1993-02-16 | Air Products And Chemicals, Inc. | Volatile precursors for copper CVD |
US5358743A (en) * | 1992-11-24 | 1994-10-25 | University Of New Mexico | Selective and blanket chemical vapor deposition of Cu from (β-diketonate)Cu(L)n by silica surface modification |
JP3282392B2 (en) * | 1994-08-10 | 2002-05-13 | 三菱マテリアル株式会社 | Organocopper compounds for copper thin film formation by metalorganic chemical vapor deposition with high vapor pressure |
US5744192A (en) * | 1996-11-08 | 1998-04-28 | Sharp Microelectronics Technology, Inc. | Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS |
-
1999
- 1999-04-15 KR KR1019990013236A patent/KR100298125B1/en not_active IP Right Cessation
- 1999-12-07 JP JP2000612535A patent/JP2002542397A/en active Pending
- 1999-12-07 EP EP99959960A patent/EP1102872A4/en not_active Withdrawn
- 1999-12-07 WO PCT/KR1999/000743 patent/WO2000063461A1/en active Application Filing
- 1999-12-07 CN CNB998026484A patent/CN1194117C/en not_active Expired - Fee Related
- 1999-12-07 RU RU2000118774/04A patent/RU2181725C2/en not_active IP Right Cessation
- 1999-12-15 TW TW088122014A patent/TW524881B/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1001047A2 (en) * | 1998-11-10 | 2000-05-17 | Sharp Kabushiki Kaisha | Alkene ligand precursor and synthesis method |
Non-Patent Citations (5)
Title |
---|
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; RHEWE, SHI-WOO ET AL: "Property of hfac (hexafluoroacetylacetonate)Cu(I)DMB (3,3-dimethyl-1- butene) as a liquid precursor for chemical vapor deposition of copper films", XP002473287, retrieved from STN Database accession no. 132:159098 * |
DOPPELT P ET AL: "Alkyne complexes of copper(I) (1,1,1,5,5,5-hexafluoro-2,4-pentanedion ato): syntheses and characterization of (eta<2>-bis(trimethylsilyl) acetylene) copper(I) (hfac), (mu-eta<2>-bis(trimethylsilyl) acetylene) bis(copper(I) (hfac)) and a series of (eta<2>-alkyne) Cu(hfac) complexes", JOURNAL OF ORGANOMETALLIC CHEMISTRY, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 517, no. 1, 28 June 1996 (1996-06-28), pages 53 - 62, XP004035961, ISSN: 0022-328X * |
HAN'GUK CHAELYO HAKHOECHI , 9(11), 1148-1152 CODEN: HCHAEU; ISSN: 1225-0562, 1999 * |
KANG S-W ET AL: "(hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1-pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-bute ne) for the chemical vapor deposition of copper film", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 350, no. 1-2, 15 August 1999 (1999-08-15), pages 10 - 13, XP004180583, ISSN: 0040-6090 * |
See also references of WO0063461A1 * |
Also Published As
Publication number | Publication date |
---|---|
KR100298125B1 (en) | 2001-09-13 |
EP1102872A1 (en) | 2001-05-30 |
TW524881B (en) | 2003-03-21 |
WO2000063461A1 (en) | 2000-10-26 |
RU2181725C2 (en) | 2002-04-27 |
KR19990046683A (en) | 1999-07-05 |
JP2002542397A (en) | 2002-12-10 |
CN1194117C (en) | 2005-03-23 |
CN1290309A (en) | 2001-04-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20000706 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20080402 |
|
17Q | First examination report despatched |
Effective date: 20090116 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20090528 |