KR920000618A - 다결정 실리콘 제조에서의 스타터 필라멘트용 흑연 척 및 그 보호 방법 - Google Patents

다결정 실리콘 제조에서의 스타터 필라멘트용 흑연 척 및 그 보호 방법 Download PDF

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Publication number
KR920000618A
KR920000618A KR1019900021578A KR900021578A KR920000618A KR 920000618 A KR920000618 A KR 920000618A KR 1019900021578 A KR1019900021578 A KR 1019900021578A KR 900021578 A KR900021578 A KR 900021578A KR 920000618 A KR920000618 A KR 920000618A
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South Korea
Prior art keywords
polycrystalline silicon
protection method
graphite
starter
starter filament
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KR1019900021578A
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KR960003734B1 (ko
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헨리 길버트 마이클
블라이스 헷지 죤
쥬드 월시 폴
Original Assignee
티모시 엔. 비숍
유니온 카바이드 코팅즈 서비스 테크놀러지 코포레이션
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Publication of KR920000618A publication Critical patent/KR920000618A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5001—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with carbon or carbonisable materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

내용 없음

Description

다결정 실리콘 제조에서의 스타터 필라멘트용 흑연 척 및 그 보호방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 스타터 필라멘트가 장착되어 있고 전극상에 설치된 상태의 본 발명에 따른 흑연 척의 단면도.

Claims (2)

  1. 스타터 필라멘트상에서의 기체상 실리콘 화합물이 열분해에 의해 다결정 실리콘 로드의 제조에 있어 연신된 스타터 필라멘트를 장착하기에 적합하고, 열분해 흑연으로된 외부 코팅층을 가지는 것을 특징으로 하는 흑연 척.
  2. 기체상 실리콘 화합물의 열분해에 의해 다결정 로드를 형성하기 위한 가열된 스타터 필라멘트 지지용 흑연 구조물의 보호 방법에 있어서, 낮은 압력과 900내지 2100℃ 사이의 고온에서 탄화수소 가수를 분해하므로써 상기 흑연 구조물에 외부 코팅을 형성하는 것을 특징으로 하는 보호 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019900021578A 1990-06-27 1990-12-24 다결정 실리콘 제조에서의 스타터 필라멘트용 흑연 척 및 그 보호 방법 KR960003734B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US54461190A 1990-06-27 1990-06-27
US544,611 1990-06-27
US544611 1995-10-18

Publications (2)

Publication Number Publication Date
KR920000618A true KR920000618A (ko) 1992-01-29
KR960003734B1 KR960003734B1 (ko) 1996-03-21

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KR1019900021578A KR960003734B1 (ko) 1990-06-27 1990-12-24 다결정 실리콘 제조에서의 스타터 필라멘트용 흑연 척 및 그 보호 방법

Country Status (5)

Country Link
US (1) US5277934A (ko)
JP (1) JP2556397B2 (ko)
KR (1) KR960003734B1 (ko)
DE (1) DE4041902A1 (ko)
IT (1) IT1246735B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010087680A (ko) * 2000-03-08 2001-09-21 홍순달 장식용 포장지 및 이의 제조방법
KR100479711B1 (ko) * 2001-06-22 2005-03-30 코리아케미칼 주식회사 부분접착에 의한 투명효과 금은박 열전사필름 및 그제조방법
KR200452119Y1 (ko) * 2009-01-06 2011-02-08 양종열 화훼포장용 포장지

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JP3774920B2 (ja) * 1995-12-27 2006-05-17 信越半導体株式会社 単結晶引上装置のヒータ機構
US6238483B1 (en) 1999-08-31 2001-05-29 Memc Electronic Materials, Inc. Apparatus for supporting a semiconductor ingot during growth
US20070181065A1 (en) * 2006-02-09 2007-08-09 General Electric Company Etch resistant heater and assembly thereof
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
KR100768147B1 (ko) * 2006-05-11 2007-10-18 한국화학연구원 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치
KR100768148B1 (ko) * 2006-05-22 2007-10-17 한국화학연구원 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법
DE202009007875U1 (de) 2009-06-04 2009-08-20 Wüst, Manfred, Dr. Vorwärmvorrichtung zum Vorwärmen von flüssigem und/oder gasförmigen Treibstoff für eine Brennkraftmaschine
JP5431074B2 (ja) * 2009-09-02 2014-03-05 東洋炭素株式会社 シード保持部材及びそのシード保持部材を用いた多結晶シリコン製造方法
US10494714B2 (en) 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
KR101435875B1 (ko) * 2012-03-12 2014-09-01 (주)아폴로테크 폴리실리콘 제조용 흑연척 재활용 방법
CN104411864B (zh) * 2012-07-10 2017-03-15 赫姆洛克半导体公司 用于沉积材料的制造设备和用于其中的托座
EP3578514A4 (en) 2017-03-08 2020-10-07 Tokuyama Corporation METHOD OF MANUFACTURING A POLYCRYSTALLINE SILICON PROCESSED ARTICLE
JP6843301B2 (ja) * 2018-07-23 2021-03-17 株式会社トクヤマ 芯線ホルダ、シリコン製造装置及びシリコン製造方法
CN111945129A (zh) * 2020-07-22 2020-11-17 山东国晶新材料有限公司 一种用于真空炉石墨部件的防护方法

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DE1223804B (de) * 1961-01-26 1966-09-01 Siemens Ag Vorrichtung zur Gewinnung reinen Halbleitermaterials, wie Silicium
JPS5121937A (ja) * 1974-08-15 1976-02-21 Kinki Bendeingu Saabisu Kk Booruchidashiki
US4621017A (en) * 1982-04-15 1986-11-04 Kennecott Corporation Corrosion and wear resistant graphite material and method of manufacture
JPS6176663A (ja) * 1984-09-20 1986-04-19 Hitachi Chem Co Ltd アルミニウム蒸着用黒鉛るつぼ
JPH0825838B2 (ja) * 1986-09-19 1996-03-13 東洋炭素株式会社 エピタキシヤル成長用黒鉛材料
JPS649900A (en) * 1987-06-30 1989-01-13 Ibiden Co Ltd Jig for heat-treating semiconductor wafer
JPH01176290A (ja) * 1987-12-28 1989-07-12 Ibiden Co Ltd 液相エピタキシャル成長用黒鉛治具

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010087680A (ko) * 2000-03-08 2001-09-21 홍순달 장식용 포장지 및 이의 제조방법
KR100479711B1 (ko) * 2001-06-22 2005-03-30 코리아케미칼 주식회사 부분접착에 의한 투명효과 금은박 열전사필름 및 그제조방법
KR200452119Y1 (ko) * 2009-01-06 2011-02-08 양종열 화훼포장용 포장지

Also Published As

Publication number Publication date
IT1246735B (it) 1994-11-26
IT9022537A0 (it) 1990-12-24
KR960003734B1 (ko) 1996-03-21
JPH06157195A (ja) 1994-06-03
DE4041902C2 (ko) 1993-04-08
IT9022537A1 (it) 1992-06-24
JP2556397B2 (ja) 1996-11-20
DE4041902A1 (de) 1992-01-09
US5277934A (en) 1994-01-11

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