KR970074987A - 실리콘 단결정 추출 장치 - Google Patents

실리콘 단결정 추출 장치 Download PDF

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Publication number
KR970074987A
KR970074987A KR1019970022356A KR19970022356A KR970074987A KR 970074987 A KR970074987 A KR 970074987A KR 1019970022356 A KR1019970022356 A KR 1019970022356A KR 19970022356 A KR19970022356 A KR 19970022356A KR 970074987 A KR970074987 A KR 970074987A
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KR
South Korea
Prior art keywords
crucible
single crystal
silicon single
extraction device
cylindrical
Prior art date
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KR1019970022356A
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English (en)
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KR100310317B1 (ko
Inventor
꼬지 까또
마사유끼 사또
따까시 따까기
Original Assignee
엔도 마사루
이비덴 가부시끼가이샤
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Publication of KR970074987A publication Critical patent/KR970074987A/ko
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Publication of KR100310317B1 publication Critical patent/KR100310317B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

실리콘 단결정 추출 장치가 개시되어 있다. 상기 추출 장치는 주 장치 본체, 상기 주 장치 본체 내부에 수용되며 석영 도가니부와 도가니 보호부로 구성된 도가니, 상기 도가니의 외부 주변에 배치된 가열 부재, 상기 가열 부재의 외부에 배열된 원통형 보온체, 그리고 상기 원통형 보온체와 주 장치 본체 사이에 배치된 단열재를 포함하는 실리콘 단결정 추출 장치에 있어서, 원통형 보온체의 적어도 내측 상부 영역 및/또는 탄소상 물질로 만들어진 도가니 보호부가 열분해된 탄소막으로 도포된다.

Description

실리콘 단결정 추출 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 주 장치 본체, 상기 주 장치 본체 내부에 사용되며 석영 도가니부와 도가니 보호부로 구성된 도가니, 상기 도가니의 외부 주변에 배치된 가열 부재, 상기 가열 부재의 외부에 배열된 원통형 보온체, 그리고 상기 원통형 보온체와 주 장치 본체 사이에 배치된 단열재를 포함하는 실리콘 단결정 추출 장치에 있어서, 원통형 보온체의 적어도 내측 상부 영역 및/또는 탄소상 물질로 만들어진 도가니 보호부가 열분해된 탄소막으로 도포되는 것을 특징으로 하는 실리콘 단결정 추출 장치.
  2. 제1항에 있어서, 상기 탄소상 물질이 실온에서 1,000℃까지의 범위 내에서는 3.5 내지 6.0×10-6/℃의 평균 열 팽창 계수를 가지며 수은 투과 방법으로 측정할 때 75내지 75,000Å의 구멍 크기 범위를 가지며 평균구멍 크기가 10,000Å 이상인 흑연 기질인 것을 특징으로 하는 실리콘 단결정 추출 장치.
  3. 제1항에 있어서, 상기 탄소상 물질이 탄소가 결합된 탄소 섬유 복합체인 것을 특징으로 하는 실리콘 단결정 추출 장치.
  4. 제1항에 있어서, 상기 열분해된 탄소막은 원통형 보온테 및/또는 도가니 보호부의 외측 상부와 내측 전부에 10-100㎛두께로 연장되어 있는 것을 특징으로 하는 실리콘 단결정 추출 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970022356A 1996-05-31 1997-05-31 실리콘 단결정 추출 장치 KR100310317B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-138801 1996-05-31
JP13880196A JP3653647B2 (ja) 1996-05-31 1996-05-31 シリコン単結晶引き上げ装置用の保温筒

Publications (2)

Publication Number Publication Date
KR970074987A true KR970074987A (ko) 1997-12-10
KR100310317B1 KR100310317B1 (ko) 2002-07-27

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Country Status (7)

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US (1) US5954875A (ko)
EP (1) EP0810305B1 (ko)
JP (1) JP3653647B2 (ko)
KR (1) KR100310317B1 (ko)
CN (1) CN1060231C (ko)
DE (1) DE69719856T2 (ko)
TW (1) TW472301B (ko)

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KR20020053750A (ko) * 2000-12-27 2002-07-05 추후제출 탄소 재료, 특히 탄소/탄소 복합물로 된, 실리콘 인발용실리카 도가니와 같은 도가니를 수용하기 위한 보울의보호 방법 및 장치

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EP0913504B1 (en) * 1996-06-27 2010-04-07 Toyo Tanso Co., Ltd. Crucible for crystal pulling and method of manufacturing same
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US6197111B1 (en) * 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
JP4361636B2 (ja) * 1999-05-26 2009-11-11 株式会社クレハ 複合炭素質断熱材及びその製造方法
US7241345B2 (en) * 2003-06-16 2007-07-10 Applied Materials, Inc. Cylinder for thermal processing chamber
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JP5386066B2 (ja) * 2007-04-06 2014-01-15 東洋炭素株式会社 炭素質ルツボの保護方法、単結晶引き上げ装置、及び炭素質ルツボの保護用シート
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CN103160914A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种c形硅芯的拉制方法
CN104630880A (zh) * 2015-02-15 2015-05-20 英利集团有限公司 形成单晶棒的直拉系统与生长单晶棒的工艺方法
CN107299390A (zh) * 2017-08-11 2017-10-27 宁晋晶兴电子材料有限公司 一种带缓冲夹层的硅料加热埚
WO2019097875A1 (ja) * 2017-11-14 2019-05-23 信越半導体株式会社 単結晶引き上げ装置及びシリコン単結晶の引き上げ方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020053750A (ko) * 2000-12-27 2002-07-05 추후제출 탄소 재료, 특히 탄소/탄소 복합물로 된, 실리콘 인발용실리카 도가니와 같은 도가니를 수용하기 위한 보울의보호 방법 및 장치

Also Published As

Publication number Publication date
JP3653647B2 (ja) 2005-06-02
EP0810305A1 (en) 1997-12-03
CN1173556A (zh) 1998-02-18
DE69719856D1 (de) 2003-04-24
KR100310317B1 (ko) 2002-07-27
TW472301B (en) 2002-01-11
DE69719856T2 (de) 2003-12-24
CN1060231C (zh) 2001-01-03
EP0810305B1 (en) 2003-03-19
JPH09328393A (ja) 1997-12-22
US5954875A (en) 1999-09-21

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