DE69719856D1 - Vorrichtung zur Ziehung eines Silizium Einkristalls - Google Patents

Vorrichtung zur Ziehung eines Silizium Einkristalls

Info

Publication number
DE69719856D1
DE69719856D1 DE69719856T DE69719856T DE69719856D1 DE 69719856 D1 DE69719856 D1 DE 69719856D1 DE 69719856 T DE69719856 T DE 69719856T DE 69719856 T DE69719856 T DE 69719856T DE 69719856 D1 DE69719856 D1 DE 69719856D1
Authority
DE
Germany
Prior art keywords
pulling
single crystal
silicon single
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69719856T
Other languages
English (en)
Other versions
DE69719856T2 (de
Inventor
Koji Kato
Masayuki Sato
Takashi Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Application granted granted Critical
Publication of DE69719856D1 publication Critical patent/DE69719856D1/de
Publication of DE69719856T2 publication Critical patent/DE69719856T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69719856T 1996-05-31 1997-05-28 Vorrichtung zur Ziehung eines Silizium Einkristalls Expired - Lifetime DE69719856T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13880196A JP3653647B2 (ja) 1996-05-31 1996-05-31 シリコン単結晶引き上げ装置用の保温筒

Publications (2)

Publication Number Publication Date
DE69719856D1 true DE69719856D1 (de) 2003-04-24
DE69719856T2 DE69719856T2 (de) 2003-12-24

Family

ID=15230558

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69719856T Expired - Lifetime DE69719856T2 (de) 1996-05-31 1997-05-28 Vorrichtung zur Ziehung eines Silizium Einkristalls

Country Status (7)

Country Link
US (1) US5954875A (de)
EP (1) EP0810305B1 (de)
JP (1) JP3653647B2 (de)
KR (1) KR100310317B1 (de)
CN (1) CN1060231C (de)
DE (1) DE69719856T2 (de)
TW (1) TW472301B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0913504B1 (de) * 1996-06-27 2010-04-07 Toyo Tanso Co., Ltd. Tiegel für kristallziehung und verfahren zu dessen herstellung
JP3267225B2 (ja) * 1997-12-26 2002-03-18 住友金属工業株式会社 単結晶引き上げ方法、及び単結晶引き上げ装置
JP4217844B2 (ja) * 1998-06-18 2009-02-04 ジャパンスーパークォーツ株式会社 複合ルツボとその製造方法および再生方法
US6197111B1 (en) * 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
JP4361636B2 (ja) * 1999-05-26 2009-11-11 株式会社クレハ 複合炭素質断熱材及びその製造方法
FR2818666B1 (fr) * 2000-12-27 2004-02-06 Snecma Moteurs Protection d'un bol en materiau carbone, notamment en composite c/c, destine a recevoir un creuset, tel qu'un creuset en silice pour le tirage de silicium
US7241345B2 (en) * 2003-06-16 2007-07-10 Applied Materials, Inc. Cylinder for thermal processing chamber
CN100371506C (zh) * 2005-03-28 2008-02-27 荀建华 单晶炉的保温装置
JP5386066B2 (ja) * 2007-04-06 2014-01-15 東洋炭素株式会社 炭素質ルツボの保護方法、単結晶引き上げ装置、及び炭素質ルツボの保護用シート
EP2337881A1 (de) 2008-08-27 2011-06-29 BP Corporation North America Inc. System und verfahren zur eingrenzung von flüssigsilikon
WO2011099110A1 (ja) * 2010-02-09 2011-08-18 Kaneko Kyojiro シリコン真空溶解法
CN101851780B (zh) * 2010-06-13 2012-02-22 浙江碧晶科技有限公司 一种防止硅沉积的拉晶炉热场
JP5662078B2 (ja) * 2010-08-04 2015-01-28 イビデン株式会社 Ｃ／ｃ複合材成形体及びその製造方法
US20130305984A1 (en) * 2011-02-02 2013-11-21 Toyo Tanso Co., Ltd. Graphite crucible for single crystal pulling apparatus and method of manufacturing same
US8281620B1 (en) * 2011-04-27 2012-10-09 Japan Super Quartz Corporation Apparatus for manufacturing vitreous silica crucible
CN103160914A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种c形硅芯的拉制方法
CN104630880A (zh) * 2015-02-15 2015-05-20 英利集团有限公司 形成单晶棒的直拉系统与生长单晶棒的工艺方法
CN107299390A (zh) * 2017-08-11 2017-10-27 宁晋晶兴电子材料有限公司 一种带缓冲夹层的硅料加热埚
WO2019097875A1 (ja) * 2017-11-14 2019-05-23 信越半導体株式会社 単結晶引き上げ装置及びシリコン単結晶の引き上げ方法
CN110526730A (zh) * 2019-09-12 2019-12-03 北京动力机械研究所 一种增强型石墨发热体结构及其制备方法
CN113370591B (zh) * 2021-07-12 2022-12-23 成都东骏激光股份有限公司 一种高温挥发抑制装置与方法以及装置的应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743951A1 (de) * 1986-12-26 1988-07-07 Toshiba Ceramics Co Einrichtung zum ziehen von siliziumeinkristallen mit einem waermeisolierzylinder und verfahren zur herstellung des materials desselben
JP2553633B2 (ja) * 1988-05-19 1996-11-13 住友電気工業株式会社 高温炉の断熱方法
JPH0684276B2 (ja) * 1989-03-02 1994-10-26 イビデン株式会社 単結晶引き上げ装置用ガス整流部材
DE4007053A1 (de) * 1989-03-21 1990-09-27 Schunk Kohlenstofftechnik Gmbh Graphittiegel, verfahren zu seiner herstellung und verwendung
JP2543782B2 (ja) * 1990-10-25 1996-10-16 コマツ電子金属株式会社 半導体単結晶引上装置の黒鉛ルツボ
DE4204777A1 (de) * 1991-02-20 1992-10-08 Sumitomo Metal Ind Vorrichtung und verfahren zum zuechten von einkristallen
DE69127551T2 (de) * 1991-06-24 1998-01-08 Komatsu Denshi Kinzoku Kk Vorrichtung zum ziehen eines einkristalls
EP0529594A1 (de) * 1991-08-29 1993-03-03 Ucar Carbon Technology Corporation Glanzkohlenstoffbeschichteter Graphit-Gegenstand zur Anwendung in Siliziumkristallzüchtung
JPH05270971A (ja) * 1992-03-27 1993-10-19 Sumitomo Metal Ind Ltd 単結晶引き上げ用黒鉛ルツボ及びその製造方法
JP2686223B2 (ja) * 1993-11-30 1997-12-08 住友シチックス株式会社 単結晶製造装置
JP3589691B2 (ja) * 1994-02-09 2004-11-17 東洋炭素株式会社 シリコン単結晶引上げ装置用ヒートシールド
DE4442829A1 (de) * 1994-12-01 1996-06-05 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zur Herstellung eines Einkristalls
EP0765954B1 (de) * 1995-09-26 1999-04-28 Balzers und Leybold Deutschland Holding Aktiengesellschaft Kristallziehanlage

Also Published As

Publication number Publication date
EP0810305B1 (de) 2003-03-19
KR100310317B1 (ko) 2002-07-27
KR970074987A (ko) 1997-12-10
EP0810305A1 (de) 1997-12-03
DE69719856T2 (de) 2003-12-24
JP3653647B2 (ja) 2005-06-02
CN1060231C (zh) 2001-01-03
TW472301B (en) 2002-01-11
CN1173556A (zh) 1998-02-18
JPH09328393A (ja) 1997-12-22
US5954875A (en) 1999-09-21

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