DE69829641D1 - Vorrichtung zur Beobachtung der Züchtung eines Kristalles - Google Patents

Vorrichtung zur Beobachtung der Züchtung eines Kristalles

Info

Publication number
DE69829641D1
DE69829641D1 DE69829641T DE69829641T DE69829641D1 DE 69829641 D1 DE69829641 D1 DE 69829641D1 DE 69829641 T DE69829641 T DE 69829641T DE 69829641 T DE69829641 T DE 69829641T DE 69829641 D1 DE69829641 D1 DE 69829641D1
Authority
DE
Germany
Prior art keywords
growth
monitoring
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69829641T
Other languages
English (en)
Other versions
DE69829641T2 (de
Inventor
Shiro Tsukamoto
Noboyuki Koguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Institute for Metals
Original Assignee
National Research Institute for Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Institute for Metals filed Critical National Research Institute for Metals
Publication of DE69829641D1 publication Critical patent/DE69829641D1/de
Application granted granted Critical
Publication of DE69829641T2 publication Critical patent/DE69829641T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
    • G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/852—Manufacture, treatment, or detection of nanostructure with scanning probe for detection of specific nanostructure sample or nanostructure-related property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Landscapes

  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
DE69829641T 1997-12-10 1998-12-09 Vorrichtung zur Beobachtung der Züchtung eines Kristalles Expired - Lifetime DE69829641T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34041397A JP3188913B2 (ja) 1997-12-10 1997-12-10 結晶成長観察装置
JP34041397 1997-12-10

Publications (2)

Publication Number Publication Date
DE69829641D1 true DE69829641D1 (de) 2005-05-12
DE69829641T2 DE69829641T2 (de) 2005-09-08

Family

ID=18336716

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69829641T Expired - Lifetime DE69829641T2 (de) 1997-12-10 1998-12-09 Vorrichtung zur Beobachtung der Züchtung eines Kristalles

Country Status (5)

Country Link
US (1) US6074485A (de)
EP (1) EP0936291B1 (de)
JP (1) JP3188913B2 (de)
DE (1) DE69829641T2 (de)
DK (1) DK0936291T3 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1241246C (zh) * 2001-09-10 2006-02-08 松下电器产业株式会社 膜评价方法、温度测定方法及半导体装置的制造方法
CN104749325B (zh) * 2015-04-13 2016-09-21 清华大学 原位输运性质测量方法
CN111876729B (zh) * 2020-07-02 2021-08-13 中国科学技术大学 一种stm-mbe联用系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174699A (ja) * 1986-01-28 1987-07-31 富士写真フイルム株式会社 記録用フイルム
US4732108A (en) * 1986-08-26 1988-03-22 The Perkin-Elmer Corporation Apparatus for monitoring epitaxial growth
US5323003A (en) * 1991-09-03 1994-06-21 Canon Kabushiki Kaisha Scanning probe microscope and method of observing sample by using such a microscope
JPH05203406A (ja) * 1992-01-24 1993-08-10 Sony Corp Ｓｔｍ、ｆｉｍ及びｍｂｅ複合装置
US5582646A (en) * 1994-10-21 1996-12-10 J.A. Woollam Co. Inc. Ellipsometer/polarimeter based process monitor and control system suitable for simultaneous retrofit on molecular beam epitaxy system RHEED/LEED interface system, and method of use
US5455420A (en) * 1994-07-12 1995-10-03 Topometrix Scanning probe microscope apparatus for use in a scanning electron
JP2912842B2 (ja) * 1995-01-17 1999-06-28 株式会社エイコー・エンジニアリング 薄膜形成装置

Also Published As

Publication number Publication date
EP0936291B1 (de) 2005-04-06
DK0936291T3 (da) 2005-04-25
JP3188913B2 (ja) 2001-07-16
EP0936291A1 (de) 1999-08-18
DE69829641T2 (de) 2005-09-08
JPH11171692A (ja) 1999-06-29
US6074485A (en) 2000-06-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KUDLEK & GRUNERT PATENTANWAELTE PARTNERSCHAFT, 803