DE69802008T2 - Vorrichtung zur kristallziehung - Google Patents

Vorrichtung zur kristallziehung

Info

Publication number
DE69802008T2
DE69802008T2 DE69802008T DE69802008T DE69802008T2 DE 69802008 T2 DE69802008 T2 DE 69802008T2 DE 69802008 T DE69802008 T DE 69802008T DE 69802008 T DE69802008 T DE 69802008T DE 69802008 T2 DE69802008 T2 DE 69802008T2
Authority
DE
Germany
Prior art keywords
drawing device
crystal drawing
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69802008T
Other languages
English (en)
Other versions
DE69802008D1 (de
Inventor
F Cherko
Harold Korb
G Schrenker
S Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69802008D1 publication Critical patent/DE69802008D1/de
Publication of DE69802008T2 publication Critical patent/DE69802008T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69802008T 1997-11-25 1998-11-10 Vorrichtung zur kristallziehung Expired - Fee Related DE69802008T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/978,334 US5935328A (en) 1997-11-25 1997-11-25 Apparatus for use in crystal pulling
PCT/US1998/023805 WO1999027165A1 (en) 1997-11-25 1998-11-10 Apparatus for use in crystal pulling

Publications (2)

Publication Number Publication Date
DE69802008D1 DE69802008D1 (de) 2001-11-15
DE69802008T2 true DE69802008T2 (de) 2002-02-07

Family

ID=25525988

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802008T Expired - Fee Related DE69802008T2 (de) 1997-11-25 1998-11-10 Vorrichtung zur kristallziehung

Country Status (9)

Country Link
US (1) US5935328A (de)
EP (1) EP1034323B1 (de)
JP (1) JP2001524446A (de)
KR (1) KR20010032413A (de)
CN (1) CN1280634A (de)
DE (1) DE69802008T2 (de)
MY (1) MY133072A (de)
TW (1) TW428054B (de)
WO (1) WO1999027165A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6776840B1 (en) 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
US6238483B1 (en) * 1999-08-31 2001-05-29 Memc Electronic Materials, Inc. Apparatus for supporting a semiconductor ingot during growth
WO2001057294A1 (en) 2000-02-01 2001-08-09 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
US6835247B2 (en) * 2000-10-31 2004-12-28 Advanced Silicon Materials Llc Rod replenishment system for use in single crystal silicon production
CN1329558C (zh) * 2004-08-13 2007-08-01 山东大学 具有阻尼的晶体旋转提拉装置
US7465288B2 (en) * 2005-06-28 2008-12-16 St. Jude Medical, Atrial Fibrillation Division, Inc. Actuation handle for a catheter
TWI382107B (zh) * 2008-05-16 2013-01-11 Sino American Silicon Prod Inc Long crystal furnace pull crystal rod
US20100107966A1 (en) * 2008-11-05 2010-05-06 Memc Electronic Materials, Inc. Methods for preparing a melt of silicon powder for silicon crystal growth
CN101713097B (zh) * 2009-12-18 2011-10-05 江苏华盛天龙光电设备股份有限公司 一种自动平衡补偿式硅单晶生长用提升装置
US9634098B2 (en) 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
KR101623641B1 (ko) * 2014-08-04 2016-05-23 주식회사 엘지실트론 잉곳성장장치
US11255024B2 (en) 2019-06-18 2022-02-22 Linton Crystal Technologies Corp. Seed lifting and rotating system for use in crystal growth
US11891721B2 (en) 2020-12-09 2024-02-06 Linton Kayex Technology Co., Ltd Spool-balanced seed lift

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL128651C (de) * 1966-01-26
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
US4371502A (en) * 1980-02-08 1983-02-01 Ferrofluidics Corporation Crystal growing furnace pulling head
NL8102566A (nl) * 1980-06-14 1982-01-04 Leybold Heraeus Gmbh & Co Kg Inrichting voor het door middel van een opwikkelbaar trekorgaan uit een kroes trekken van een enkel kristal.
US4301120A (en) * 1980-09-02 1981-11-17 Ferrofluidics Corporation Chain introduction means for a crystal growth pulling head
US4352785A (en) * 1982-01-04 1982-10-05 Western Electric Co., Inc. Crystal grower with torque supportive collapsible pulling mechanism
DE3333960A1 (de) * 1983-09-20 1985-04-04 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
DE3414290A1 (de) * 1984-04-14 1985-10-24 Leybold-Heraeus GmbH, 5000 Köln Kristallhalter
JPS6447914A (en) * 1987-08-18 1989-02-22 Shinetsu Handotai Kk Apparatus for measuring crystal-rod lifting load
DE3733562A1 (de) * 1987-10-03 1989-04-20 Leybold Ag Vorrichtung zum ziehen eines einkristalls aus einem tiegel mittels eines aufwickelbaren ziehorgans
JP2714986B2 (ja) * 1989-06-27 1998-02-16 東芝セラミックス株式会社 ワイヤ固定装置
EP0437775B1 (de) * 1989-12-22 1995-03-08 Shin-Etsu Handotai Company Limited Vorrichtung zur Herstellung von Einkristallen nach dem Czochralski-Verfahren
DE4329283C2 (de) * 1993-08-31 1997-02-13 Leybold Ag Drehkopf für Kristallziehanlagen für die Durchführung des Czochralski-Prozesses

Also Published As

Publication number Publication date
CN1280634A (zh) 2001-01-17
US5935328A (en) 1999-08-10
WO1999027165A1 (en) 1999-06-03
EP1034323A1 (de) 2000-09-13
TW428054B (en) 2001-04-01
KR20010032413A (ko) 2001-04-16
EP1034323B1 (de) 2001-10-10
DE69802008D1 (de) 2001-11-15
JP2001524446A (ja) 2001-12-04
MY133072A (en) 2007-10-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee