DK0936291T3 - Krystalvækstobservationsapparat - Google Patents

Krystalvækstobservationsapparat

Info

Publication number
DK0936291T3
DK0936291T3 DK98310092T DK98310092T DK0936291T3 DK 0936291 T3 DK0936291 T3 DK 0936291T3 DK 98310092 T DK98310092 T DK 98310092T DK 98310092 T DK98310092 T DK 98310092T DK 0936291 T3 DK0936291 T3 DK 0936291T3
Authority
DK
Denmark
Prior art keywords
monitoring device
crystal growth
growth monitoring
crystal
monitoring
Prior art date
Application number
DK98310092T
Other languages
Danish (da)
English (en)
Inventor
Shiro Tsukamoto
Noboyuki Koguchi
Original Assignee
Nat Res Inst Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Res Inst Metals filed Critical Nat Res Inst Metals
Application granted granted Critical
Publication of DK0936291T3 publication Critical patent/DK0936291T3/da

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
    • G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
    • G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/852—Manufacture, treatment, or detection of nanostructure with scanning probe for detection of specific nanostructure sample or nanostructure-related property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Landscapes

  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
DK98310092T 1997-12-10 1998-12-09 Krystalvækstobservationsapparat DK0936291T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34041397A JP3188913B2 (ja) 1997-12-10 1997-12-10 結晶成長観察装置
EP98310092A EP0936291B1 (de) 1997-12-10 1998-12-09 Vorrichtung zur Beobachtung der Züchtung eines Kristalles

Publications (1)

Publication Number Publication Date
DK0936291T3 true DK0936291T3 (da) 2005-04-25

Family

ID=18336716

Family Applications (1)

Application Number Title Priority Date Filing Date
DK98310092T DK0936291T3 (da) 1997-12-10 1998-12-09 Krystalvækstobservationsapparat

Country Status (5)

Country Link
US (1) US6074485A (de)
EP (1) EP0936291B1 (de)
JP (1) JP3188913B2 (de)
DE (1) DE69829641T2 (de)
DK (1) DK0936291T3 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1241246C (zh) * 2001-09-10 2006-02-08 松下电器产业株式会社 膜评价方法、温度测定方法及半导体装置的制造方法
CN104749325B (zh) * 2015-04-13 2016-09-21 清华大学 原位输运性质测量方法
CN111876729B (zh) * 2020-07-02 2021-08-13 中国科学技术大学 一种stm-mbe联用系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174699A (ja) * 1986-01-28 1987-07-31 富士写真フイルム株式会社 記録用フイルム
US4732108A (en) * 1986-08-26 1988-03-22 The Perkin-Elmer Corporation Apparatus for monitoring epitaxial growth
US5323003A (en) * 1991-09-03 1994-06-21 Canon Kabushiki Kaisha Scanning probe microscope and method of observing sample by using such a microscope
JPH05203406A (ja) * 1992-01-24 1993-08-10 Sony Corp Ｓｔｍ、ｆｉｍ及びｍｂｅ複合装置
US5582646A (en) * 1994-10-21 1996-12-10 J.A. Woollam Co. Inc. Ellipsometer/polarimeter based process monitor and control system suitable for simultaneous retrofit on molecular beam epitaxy system RHEED/LEED interface system, and method of use
US5455420A (en) * 1994-07-12 1995-10-03 Topometrix Scanning probe microscope apparatus for use in a scanning electron
JP2912842B2 (ja) * 1995-01-17 1999-06-28 株式会社エイコー・エンジニアリング 薄膜形成装置

Also Published As

Publication number Publication date
US6074485A (en) 2000-06-13
EP0936291A1 (de) 1999-08-18
EP0936291B1 (de) 2005-04-06
DE69829641T2 (de) 2005-09-08
JP3188913B2 (ja) 2001-07-16
DE69829641D1 (de) 2005-05-12
JPH11171692A (ja) 1999-06-29

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