CN100371506C - 单晶炉的保温装置 - Google Patents
单晶炉的保温装置 Download PDFInfo
- Publication number
- CN100371506C CN100371506C CNB2005100593239A CN200510059323A CN100371506C CN 100371506 C CN100371506 C CN 100371506C CN B2005100593239 A CNB2005100593239 A CN B2005100593239A CN 200510059323 A CN200510059323 A CN 200510059323A CN 100371506 C CN100371506 C CN 100371506C
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- hole
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- single crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 38
- 238000004321 preservation Methods 0.000 title abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000009413 insulation Methods 0.000 claims abstract description 16
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 15
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 11
- 239000010439 graphite Substances 0.000 claims abstract description 11
- 238000002955 isolation Methods 0.000 claims abstract description 7
- 229920000049 Carbon (fiber) Polymers 0.000 claims abstract description 6
- 239000004917 carbon fiber Substances 0.000 claims abstract description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100593239A CN100371506C (zh) | 2005-03-28 | 2005-03-28 | 单晶炉的保温装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100593239A CN100371506C (zh) | 2005-03-28 | 2005-03-28 | 单晶炉的保温装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1840745A CN1840745A (zh) | 2006-10-04 |
CN100371506C true CN100371506C (zh) | 2008-02-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2005100593239A Expired - Fee Related CN100371506C (zh) | 2005-03-28 | 2005-03-28 | 单晶炉的保温装置 |
Country Status (1)
Country | Link |
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CN (1) | CN100371506C (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102321910B (zh) * | 2011-10-11 | 2014-04-09 | 天津市环欧半导体材料技术有限公司 | 一种控制cfz硅单晶挥发物沉积的炉腔辅助装置及其方法 |
CN107675266A (zh) * | 2017-10-30 | 2018-02-09 | 扬中市惠丰包装有限公司 | 固化软毡底盘 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1034400A (zh) * | 1987-12-08 | 1989-08-02 | 日本钢管株式会社 | 单晶硅的制造方法和设备 |
CN1173556A (zh) * | 1996-05-31 | 1998-02-18 | 伊比登株式会社 | 提拉单晶硅的装置 |
JP2940892B2 (ja) * | 1992-06-03 | 1999-08-25 | 三菱マテリアル株式会社 | 単結晶引上装置 |
JP2000119089A (ja) * | 1998-10-09 | 2000-04-25 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
US6117402A (en) * | 1998-04-08 | 2000-09-12 | Komatsu Electronic Metals Co., Ltd. | Device for manufacturing single crystals |
CN2571773Y (zh) * | 2002-10-14 | 2003-09-10 | 德清华莹电子有限公司 | 一种晶体生长用热场装置 |
CN1468328A (zh) * | 2000-10-06 | 2004-01-14 | Memc | 用于拉晶装置的热屏蔽组件 |
CN2804129Y (zh) * | 2005-03-28 | 2006-08-09 | 荀建华 | 单晶炉的保温装置 |
-
2005
- 2005-03-28 CN CNB2005100593239A patent/CN100371506C/zh not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1034400A (zh) * | 1987-12-08 | 1989-08-02 | 日本钢管株式会社 | 单晶硅的制造方法和设备 |
JP2940892B2 (ja) * | 1992-06-03 | 1999-08-25 | 三菱マテリアル株式会社 | 単結晶引上装置 |
CN1173556A (zh) * | 1996-05-31 | 1998-02-18 | 伊比登株式会社 | 提拉单晶硅的装置 |
US6117402A (en) * | 1998-04-08 | 2000-09-12 | Komatsu Electronic Metals Co., Ltd. | Device for manufacturing single crystals |
JP2000119089A (ja) * | 1998-10-09 | 2000-04-25 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
CN1468328A (zh) * | 2000-10-06 | 2004-01-14 | Memc | 用于拉晶装置的热屏蔽组件 |
CN2571773Y (zh) * | 2002-10-14 | 2003-09-10 | 德清华莹电子有限公司 | 一种晶体生长用热场装置 |
CN2804129Y (zh) * | 2005-03-28 | 2006-08-09 | 荀建华 | 单晶炉的保温装置 |
Non-Patent Citations (1)
Title |
---|
感应加热引上法生长大直径YAG:Nd激光晶体. 白凤周.人工晶体,第16卷第1期. 1987 * |
Also Published As
Publication number | Publication date |
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CN1840745A (zh) | 2006-10-04 |
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Effective date of registration: 20090206 Address after: Jiangsu city of Jintan Province Yao Tang Zhen Jin Hongwu Road No. 18 Patentee after: Changzhou EGing Photovoltaic Technology Co., Ltd. Address before: No. 17 East Main Street, Tang Zhen Town, Jintan, Jiangsu Patentee before: Xun Jianhua |
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Owner name: CHANGZHOU YIJING OPTO-ELECTRICAL SCIENCE CO., LTD. Free format text: FORMER OWNER: XUN JIANHUA Effective date: 20090206 |
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