DE69301371D1 - Vorrichtung zum Ziehen eines Silizium-Einkristalls - Google Patents

Vorrichtung zum Ziehen eines Silizium-Einkristalls

Info

Publication number
DE69301371D1
DE69301371D1 DE69301371T DE69301371T DE69301371D1 DE 69301371 D1 DE69301371 D1 DE 69301371D1 DE 69301371 T DE69301371 T DE 69301371T DE 69301371 T DE69301371 T DE 69301371T DE 69301371 D1 DE69301371 D1 DE 69301371D1
Authority
DE
Germany
Prior art keywords
pulling
single crystal
silicon single
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69301371T
Other languages
English (en)
Other versions
DE69301371T2 (de
Inventor
Toshiharu Uesugi
Koji Mizuishi
Atsushi Iwasaki
Tadashi Niwayama
Tetsuhiro Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69301371D1 publication Critical patent/DE69301371D1/de
Publication of DE69301371T2 publication Critical patent/DE69301371T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69301371T 1992-03-31 1993-03-22 Vorrichtung zum Ziehen eines Silizium-Einkristalls Expired - Fee Related DE69301371T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10555692 1992-03-31

Publications (2)

Publication Number Publication Date
DE69301371D1 true DE69301371D1 (de) 1996-03-07
DE69301371T2 DE69301371T2 (de) 1996-09-05

Family

ID=14410832

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69301371T Expired - Fee Related DE69301371T2 (de) 1992-03-31 1993-03-22 Vorrichtung zum Ziehen eines Silizium-Einkristalls

Country Status (3)

Country Link
US (1) US5394829A (de)
EP (1) EP0568183B1 (de)
DE (1) DE69301371T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
DE19628851A1 (de) * 1996-07-17 1998-01-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
JP3838013B2 (ja) * 2000-09-26 2006-10-25 信越半導体株式会社 シリコン単結晶の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE261554C (de) * 1912-06-18 1913-06-23 Gesellschaft Fuer Teerverwertung Mbh Verfahren zur Herstellung von Schutzhüllen auf Kohlenelektroden, insbesondere für elektrische öfen
US3261671A (en) * 1963-11-29 1966-07-19 Philips Corp Device for treating semi-conductor materials by melting
US3453352A (en) * 1964-12-14 1969-07-01 Texas Instruments Inc Method and apparatus for producing crystalline semiconductor ribbon
DE2615554C2 (de) * 1976-04-09 1985-01-17 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum Ziehen von Einkristallen auf der Basis Seltenerdmetall/Gallium-Granat
CA1090479A (en) * 1976-12-15 1980-11-25 David W. Hill Method and apparatus for avoiding undesirable deposits in crystal growing operations
US4415401A (en) * 1980-03-10 1983-11-15 Mobil Solar Energy Corporation Control of atmosphere surrounding crystal growth zone
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies
US4443411A (en) * 1980-12-15 1984-04-17 Mobil Solar Energy Corporation Apparatus for controlling the atmosphere surrounding a crystal growth zone

Also Published As

Publication number Publication date
DE69301371T2 (de) 1996-09-05
US5394829A (en) 1995-03-07
EP0568183B1 (de) 1996-01-24
EP0568183A1 (de) 1993-11-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee