DE69127551D1 - Vorrichtung zum ziehen eines einkristalls - Google Patents

Vorrichtung zum ziehen eines einkristalls

Info

Publication number
DE69127551D1
DE69127551D1 DE69127551T DE69127551T DE69127551D1 DE 69127551 D1 DE69127551 D1 DE 69127551D1 DE 69127551 T DE69127551 T DE 69127551T DE 69127551 T DE69127551 T DE 69127551T DE 69127551 D1 DE69127551 D1 DE 69127551D1
Authority
DE
Germany
Prior art keywords
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69127551T
Other languages
English (en)
Other versions
DE69127551T2 (de
Inventor
Junsuke Tomioka
Kazunori Nagai
Akihiro Matsuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Sumco Techxiv Corp
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp, Komatsu Electronic Metals Co Ltd filed Critical Sumco Techxiv Corp
Publication of DE69127551D1 publication Critical patent/DE69127551D1/de
Application granted granted Critical
Publication of DE69127551T2 publication Critical patent/DE69127551T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
DE69127551T 1991-06-24 1991-06-24 Vorrichtung zum ziehen eines einkristalls Expired - Lifetime DE69127551T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP1991/000849 WO1993000462A1 (en) 1991-06-24 1991-06-24 Device for pulling up single crystal
US07/772,928 US5316742A (en) 1991-06-24 1991-10-08 Single crystal pulling apparatus

Publications (2)

Publication Number Publication Date
DE69127551D1 true DE69127551D1 (de) 1997-10-09
DE69127551T2 DE69127551T2 (de) 1998-01-08

Family

ID=26432435

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127551T Expired - Lifetime DE69127551T2 (de) 1991-06-24 1991-06-24 Vorrichtung zum ziehen eines einkristalls

Country Status (4)

Country Link
US (2) US5441014A (de)
EP (1) EP0591525B1 (de)
DE (1) DE69127551T2 (de)
WO (1) WO1993000462A1 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
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WO1993000462A1 (en) * 1991-06-24 1993-01-07 Komatsu Electronic Metals Co., Ltd. Device for pulling up single crystal
JP2720262B2 (ja) * 1992-10-26 1998-03-04 科学技術振興事業団 単結晶引上げ装置
JP2619611B2 (ja) * 1993-05-31 1997-06-11 住友シチックス株式会社 単結晶の製造装置および製造方法
US5443034A (en) * 1994-08-17 1995-08-22 Solec International, Inc. Method and apparatus for increasing silicon ingot growth rate
DE19503357A1 (de) * 1995-02-02 1996-08-08 Wacker Siltronic Halbleitermat Vorrichtung zur Herstellung eines Einkristalls
JPH09183686A (ja) * 1995-12-27 1997-07-15 Shin Etsu Handotai Co Ltd 単結晶引き上げ方法及び装置
JP3844536B2 (ja) * 1996-01-19 2006-11-15 コマツ電子金属株式会社 単結晶引上装置
US5840120A (en) * 1996-01-22 1998-11-24 Memc Electronic Materials, Inc. Apparatus for controlling nucleation of oxygen precipitates in silicon crystals
JP4097729B2 (ja) * 1996-05-22 2008-06-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置
US5900059A (en) * 1996-05-29 1999-05-04 Komatsu Electronic Metals Co., Ltd. Method and apparatus for fabricating semiconductor single crystal
JP3653647B2 (ja) * 1996-05-31 2005-06-02 イビデン株式会社 シリコン単結晶引き上げ装置用の保温筒
DE19622664A1 (de) * 1996-06-05 1997-12-11 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen
JP3528448B2 (ja) * 1996-07-23 2004-05-17 信越半導体株式会社 単結晶の引上げ方法及び装置
US5827367A (en) * 1996-09-13 1998-10-27 Seh America Apparatus for improving mechanical strength of the neck section of czochralski silicon crystal
WO1998035074A1 (en) * 1997-02-06 1998-08-13 Crysteco, Inc. Method and apparatus for growing crystals
US6503594B2 (en) * 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
DE19756613A1 (de) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung eines Einkristalls
JP3428626B2 (ja) * 1998-06-25 2003-07-22 三菱住友シリコン株式会社 シリコン単結晶の引上げ装置及びその引上げ方法
US6197111B1 (en) * 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
JP4498516B2 (ja) * 1999-04-01 2010-07-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶インゴット製造装置及び方法
JP2000327481A (ja) * 1999-05-25 2000-11-28 Komatsu Electronic Metals Co Ltd 単結晶製造方法およびその装置
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
JP3573045B2 (ja) * 2000-02-08 2004-10-06 三菱住友シリコン株式会社 高品質シリコン単結晶の製造方法
US6482263B1 (en) * 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
EP2295619B1 (de) * 2001-01-26 2014-04-23 MEMC Electronic Materials, Inc. Verfahren zur Herstellung von Silizium mit niedriger Defektdichte und mit leerstellendominiertem Kern, der im wesentlichen frei von oxidationsinduzierten Stapelfehlern ist
US6579362B2 (en) * 2001-03-23 2003-06-17 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
KR100445188B1 (ko) * 2001-08-31 2004-08-18 주식회사 실트론 복사열 흡수용 코팅제 및 코팅제를이용한 실리콘 단결정 잉곳 성장장치
US6797062B2 (en) 2002-09-20 2004-09-28 Memc Electronic Materials, Inc. Heat shield assembly for a crystal puller
DE10321785A1 (de) * 2003-05-14 2004-12-16 Sgl Carbon Ag Dauerhafter CFC-Stütztiegel für Hochtemperaturprozesse beim Ziehen von Halbleiterkristallen
US6942733B2 (en) * 2003-06-19 2005-09-13 Memc Electronics Materials, Inc. Fluid sealing system for a crystal puller
US20050022743A1 (en) * 2003-07-31 2005-02-03 Semiconductor Energy Laboratory Co., Ltd. Evaporation container and vapor deposition apparatus
JP2005272245A (ja) * 2004-03-25 2005-10-06 Toshiba Ceramics Co Ltd シリコン単結晶引上装置
JP4582149B2 (ja) * 2008-01-10 2010-11-17 信越半導体株式会社 単結晶製造装置
JP5018609B2 (ja) * 2008-04-08 2012-09-05 株式会社Ｓｕｍｃｏ 単結晶引上げ装置
CN101665977B (zh) * 2009-09-21 2011-10-19 浙江碧晶科技有限公司 一种用于拉晶炉的热屏蔽装置
DE102010023100A1 (de) 2010-06-09 2011-12-15 Siltronic Ag Vorrichtung zum Ziehen eines Einkristalls aus Halbleitermaterial
WO2011160293A1 (zh) * 2010-06-23 2011-12-29 常州天合光能有限公司 硅单晶炉高效热屏
JP5724400B2 (ja) * 2011-01-19 2015-05-27 信越半導体株式会社 単結晶製造装置及び単結晶製造方法
KR101540232B1 (ko) * 2013-09-11 2015-07-29 주식회사 엘지실트론 잉곳성장장치
CN105316759A (zh) * 2014-07-02 2016-02-10 安徽旭特电子科技有限公司 一种带有内部水冷单晶炉用涂层热屏
JP6507811B2 (ja) * 2015-04-15 2019-05-08 住友金属鉱山株式会社 結晶育成装置
US11313049B2 (en) * 2015-10-19 2022-04-26 Globalwafers Co., Ltd. Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects
US10487418B2 (en) 2016-01-06 2019-11-26 Globalwafers Co., Ltd. Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth process
CN108179463A (zh) * 2017-12-28 2018-06-19 锦州神工半导体有限公司 直拉法中大直径单晶拉制工艺的导流结构及导流方法

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US3342559A (en) * 1964-04-27 1967-09-19 Westinghouse Electric Corp Apparatus for producing dendrites
US3694165A (en) * 1970-08-11 1972-09-26 Monsanto Co Crucible apparatus for a semiconductor crystal puller
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
JPS5836998A (ja) * 1981-08-26 1983-03-04 Toshiba Ceramics Co Ltd 単結晶シリコン引上装置
GB2139918B (en) * 1983-05-21 1986-09-10 Cambridge Instr Ltd Crystal growing apparatus
JPS6163593A (ja) * 1984-09-05 1986-04-01 Toshiba Corp 化合物半導体単結晶の製造装置
JPS62138386A (ja) * 1985-12-11 1987-06-22 Shin Etsu Handotai Co Ltd 単結晶の引上装置
JPH0733307B2 (ja) * 1986-08-18 1995-04-12 ソニー株式会社 単結晶成長装置
SU1592414A1 (ru) * 1986-11-26 1990-09-15 Vni Pk T I Elektrotermicheskog Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия
JP2528309B2 (ja) * 1987-04-14 1996-08-28 住友シチックス株式会社 単結晶成長装置
JPS6418988A (en) * 1987-07-13 1989-01-23 Sony Corp Single crystal growth unit
JPH0639352B2 (ja) * 1987-09-11 1994-05-25 信越半導体株式会社 単結晶の製造装置
JPH07115984B2 (ja) * 1987-12-02 1995-12-13 三菱マテリアル株式会社 単結晶引上装置
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
US5264189A (en) * 1988-02-23 1993-11-23 Mitsubishi Materials Corporation Apparatus for growing silicon crystals
WO1993000462A1 (en) * 1991-06-24 1993-01-07 Komatsu Electronic Metals Co., Ltd. Device for pulling up single crystal

Also Published As

Publication number Publication date
EP0591525A4 (de) 1995-05-17
EP0591525B1 (de) 1997-09-03
DE69127551T2 (de) 1998-01-08
EP0591525A1 (de) 1994-04-13
US5441014A (en) 1995-08-15
US5316742A (en) 1994-05-31
WO1993000462A1 (en) 1993-01-07

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